An Electromigration and Thermal Model of Power Wires for a Priori High-Level Reliability Prediction

In this paper, a simple power-distribution electrothermal model including the interconnect self-heating is used together with a statistical model of average and rms currents of functional blocks and a high-level model of fanout distribution and interconnect wirelength. Following the 2001 SIA roadmap projections, we are able to predict a priori that the minimum width that satisfies the electromigration constraints does not scale like the minimum metal pitch in future technology nodes. As a consequence, the percentage of chip area covered by power lines is expected to increase at the expense of wiring resources unless proper countermeasures are taken. Some possible solutions are proposed in the paper

Layout regularity metric as a fast indicator of process variations

Integrated circuits design faces increasing challenge as we scale down due to the increase of the effect of sensitivity to process variations. Systematic variations induced by different steps in the lithography process affect both parametric and functional yields of the designs. These variations are known, themselves, to be affected by layout topologies. Design for Manufacturability (DFM) aims at defining techniques that mitigate variations and improve yield. Layout regularity is one of the trending techniques suggested by DFM to mitigate process variations effect. There are several solutions to create regular designs, like restricted design rules and regular fabrics. These regular solutions raised the need for a regularity metric. Metrics in literature are insufficient for different reasons; either because they are qualitative or computationally intensive. Furthermore, there is no study relating either lithography or electrical variations to layout regularity. In this work, layout regularity is studied in details and a new geometrical-based layout regularity metric is derived. This metric is verified against lithographic simulations and shows good correlation. Calculation of the metric takes only few minutes on 1mm x 1mm design, which is considered fast compared to the time taken by simulations. This makes it a good candidate for pre-processing the layout data and selecting certain areas of interest for lithographic simulations for faster throughput. The layout regularity metric is also compared against a model that measures electrical variations due to systematic lithographic variations. The validity of using the regularity metric to flag circuits that have high variability using the developed electrical variations model is shown. The regularity metric results compared to the electrical variability model results show matching percentage that can reach 80%, which means that this metric can be used as a fast indicator of designs more susceptible to lithography and hence electrical variations

The impact of design techniques in the reduction of power consumption of SoCs Multimedia

Orientador: Guido Costa Souza de AraújoDissertação (mestrado) - Universidade Estadual de Campinas, Instituto de ComputaçãoResumo: A indústria de semicondutores sempre enfrentou fortes demandas em resolver problema de dissipação de calor e reduzir o consumo de energia em dispositivos. Esta tendência tem sido intensificada nos últimos anos com o movimento de sustentabilidade ambiental. A concepção correta de um sistema eletrônico de baixo consumo de energia é um problema de vários níveis de complexidade e exige estratégias sistemáticas na sua construção. Fora disso, a adoção de qualquer técnica de redução de energia sempre está vinculada com objetivos especiais e provoca alguns impactos no projeto. Apesar dos projetistas conheçam bem os impactos de forma qualitativa, as detalhes quantitativas ainda são incógnitas ou apenas mantidas dentro do 'know-how' das empresas. Neste trabalho, de acordo com resultados experimentais baseado num plataforma de SoC1 industrial, tentamos quantificar os impactos derivados do uso de técnicas de redução de consumo de energia. Nos concentramos em relacionar o fator de redução de energia de cada técnica aos impactos em termo de área, desempenho, esforço de implementação e verificação. Na ausência desse tipo de dados, que relacionam o esforço de engenharia com as metas de consumo de energia, incertezas e atrasos serão frequentes no cronograma de projeto. Esperamos que este tipo de orientações possam ajudar/guiar os arquitetos de projeto em selecionar as técnicas adequadas para reduzir o consumo de energia dentro do alcance de orçamento e cronograma de projetoAbstract: The semiconductor industry has always faced strong demands to solve the problem of heat dissipation and reduce the power consumption in electronic devices. This trend has been increased in recent years with the action of environmental sustainability. The correct conception of an electronic system for low power consumption is an issue with multiple levels of complexities and requires systematic approaches in its construction. However, the adoption of any technique for reducing the power consumption is always linked with some specific goals and causes some impacts on the project. Although the designers know well that these impacts can affect the design in a quality aspect, the quantitative details are still unkown or just be kept inside the company's know-how. In this work, according to the experimental results based on an industrial SoC2 platform, we try to quantify the impacts of the use of low power techniques. We will relate the power reduction factor of each technique to the impact in terms of area, performance, implementation and verification effort. In the absence of such data, which relates the engineering effort to the goals of power consumption, uncertainties and delays are frequent. We hope that such guidelines can help/guide the project architects in selecting the appropriate techniques to reduce the power consumption within the limit of budget and project scheduleMestradoCiência da ComputaçãoMestre em Ciência da Computaçã

Using Physical Compilation to Implement a System on Chip Platform

The goal of this thesis was to setup a complete design flow involving physical synthesis. The design chosen for this purpose was a system-on-chip (SoC) platform developed at the University of Tennessee. It involves a Leon Processor with a minimal cache configuration, an AMBA on-chip bus and an Advanced Encryption Standard module which performs decryption. As transistor size has entered the deep submicron level, iterations involved in the design cycle have increased due to the domination of interconnect delays over cell delays. Traditionally, interconnect delay has been estimated through the use of wire-load models. However, since there is no physical placement information, the delay estimation may be ineffective and result in increased iterations. Hence, placement-based synthesis has recently been introduced to provide better interconnect delay estimation. The tool used in this thesis to implement the system-on-chip design using physical synthesis is Synopsys Physical Compiler. The flow has been setup through the use of the Galaxy Reference Flow scripts obtained from Synopsys. As part of the thesis, an analysis of the differences between a physically synthesized design and a logically synthesized one in terms of area and delay is presented

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Design methodology and productivity improvement in high speed VLSI circuits

2017 Spring.Includes bibliographical references.To view the abstract, please see the full text of the document

Cell Library Creation using ALF

The design of Integrated Circuit (ASICs and SoCs) typically relies on the availability of a library consisting of predefined components called technology cells. Silicon vendors use proprietary formats to describe technology cells and macro modules in conjunction with numerous translators to feed technology library data to Electronic Design Automation (EDA) tools. Multiple grammar formats are used to represent various aspects of the cells in the same technology library, such as behavior for simulation, timing parameters for synthesis, physical data for layout, noise parameters for signal integrity checks, etc. In addition, most of these formats are highly tool-oriented and are not grammatically consistent. In this paper we will discuss the newly adopted IEEE 1603-2003 Advanced Library Format (ALF) standard which eliminates such drawbacks. This standard defines a grammar for accurate and comprehensive modeling of technology libraries and macro modules in order to bridge the growing gap between new design rules and the analysis required for complex high-end IC implementations

DESIGN, MODELING, OPTIMIZATION, AND BENCHMARKING OF INTERCONNECTS AND SCALING TECHNOLOGIES AND THEIR CIRCUIT AND SYSTEM LEVEL IMPACT

This research focuses on the future of integrated circuit (IC) scaling technologies at the device and back end of line (BEOL) level. This work includes high level modeling of different technologies and quantifying potential performance gains on a circuit and system level. From the device side, this research looks at the scaling challenges and the future scaling drivers for conventional charge-based devices implemented at the 7nm technology node and beyond. It examines the system-level performance of stacking device logic in addition to tunneling field effect transistors (TFET) and their potential as beyond-CMOS devices. Finally, this research models and benchmarks BEOL scaling challenges and evaluates proposed technological advancements such as metal barrier scaling for copper interconnects and replacing local interconnects with ruthenium. Potential impact on performance, power, and area of these interconnect technologies is quantified for fully placed and routed circuits.Ph.D