Flexible-Latency DRAM: Understanding and Exploiting Latency Variation in Modern DRAM Chips

This article summarizes key results of our work on experimental characterization and analysis of latency variation and latency-reliability trade-offs in modern DRAM chips, which was published in SIGMETRICS 2016, and examines the work's significance and future potential. The goal of this work is to (i) experimentally characterize and understand the latency variation across cells within a DRAM chip for these three fundamental DRAM operations, and (ii) develop new mechanisms that exploit our understanding of the latency variation to reliably improve performance. To this end, we comprehensively characterize 240 DRAM chips from three major vendors, and make six major new observations about latency variation within DRAM. Notably, we find that (i) there is large latency variation across the cells for each of the three operations; (ii) variation characteristics exhibit significant spatial locality: slower cells are clustered in certain regions of a DRAM chip; and (iii) the three fundamental operations exhibit different reliability characteristics when the latency of each operation is reduced. Based on our observations, we propose Flexible-LatencY DRAM (FLY-DRAM), a mechanism that exploits latency variation across DRAM cells within a DRAM chip to improve system performance. The key idea of FLY-DRAM is to exploit the spatial locality of slower cells within DRAM, and access the faster DRAM regions with reduced latencies for the fundamental operations. Our evaluations show that FLY-DRAM improves the performance of a wide range of applications by 13.3%, 17.6%, and 19.5%, on average, for each of the three different vendors' real DRAM chips, in a simulated 8-core system

Voltron: Understanding and Exploiting the Voltage-Latency-Reliability Trade-Offs in Modern DRAM Chips to Improve Energy Efficiency

This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a comprehensive approach to understanding and exploiting the latency and reliability characteristics of modern DRAM when the DRAM supply voltage is lowered below the nominal voltage level specified by DRAM standards. We perform an experimental study of 124 real DDR3L (low-voltage) DRAM chips manufactured recently by three major DRAM vendors. We find that reducing the supply voltage below a certain point introduces bit errors in the data, and we comprehensively characterize the behavior of these errors. We discover that these errors can be avoided by increasing the latency of three major DRAM operations (activation, restoration, and precharge). We perform detailed DRAM circuit simulations to validate and explain our experimental findings. We also characterize the various relationships between reduced supply voltage and error locations, stored data patterns, DRAM temperature, and data retention. Based on our observations, we propose a new DRAM energy reduction mechanism, called Voltron. The key idea of Voltron is to use a performance model to determine by how much we can reduce the supply voltage without introducing errors and without exceeding a user-specified threshold for performance loss. Our evaluations show that Voltron reduces the average DRAM and system energy consumption by 10.5% and 7.3%, respectively, while limiting the average system performance loss to only 1.8%, for a variety of memory-intensive quad-core workloads. We also show that Voltron significantly outperforms prior dynamic voltage and frequency scaling mechanisms for DRAM

Adaptive-Latency DRAM: Reducing DRAM Latency by Exploiting Timing Margins

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and the operating temperature, by exploiting the extra margin that is built into the DRAM timing parameters. DRAM manufacturers provide a large margin for the timing parameters as a provision against two worst-case scenarios. First, due to process variation, some outlier DRAM chips are much slower than others. Second, chips become slower at higher temperatures. The timing parameter margin ensures that the slow outlier chips operate reliably at the worst-case temperature, and hence leads to a high access latency. Using an FPGA-based DRAM testing platform, our work first characterizes the extra margin for 115 DRAM modules from three major manufacturers. The experimental results demonstrate that it is possible to reduce four of the most critical timing parameters by a minimum/maximum of 17.3%/54.8% at 55C while maintaining reliable operation. AL-DRAM uses these observations to adaptively select reliable DRAM timing parameters for each DRAM module based on the module's current operating conditions. AL-DRAM does not require any changes to the DRAM chip or its interface; it only requires multiple different timing parameters to be specified and supported by the memory controller. Our real system evaluations show that AL-DRAM improves the performance of memory-intensive workloads by an average of 14% without introducing any errors. Our characterization and proposed techniques have inspired several other works on analyzing and/or exploiting different sources of latency and performance variation within DRAM chips.Comment: arXiv admin note: substantial text overlap with arXiv:1603.0845

Understanding Reduced-Voltage Operation in Modern DRAM Chips: Characterization, Analysis, and Mechanisms

The energy consumption of DRAM is a critical concern in modern computing systems. Improvements in manufacturing process technology have allowed DRAM vendors to lower the DRAM supply voltage conservatively, which reduces some of the DRAM energy consumption. We would like to reduce the DRAM supply voltage more aggressively, to further reduce energy. Aggressive supply voltage reduction requires a thorough understanding of the effect voltage scaling has on DRAM access latency and DRAM reliability. In this paper, we take a comprehensive approach to understanding and exploiting the latency and reliability characteristics of modern DRAM when the supply voltage is lowered below the nominal voltage level specified by DRAM standards. Using an FPGA-based testing platform, we perform an experimental study of 124 real DDR3L (low-voltage) DRAM chips manufactured recently by three major DRAM vendors. We find that reducing the supply voltage below a certain point introduces bit errors in the data, and we comprehensively characterize the behavior of these errors. We discover that these errors can be avoided by increasing the latency of three major DRAM operations (activation, restoration, and precharge). We perform detailed DRAM circuit simulations to validate and explain our experimental findings. We also characterize the various relationships between reduced supply voltage and error locations, stored data patterns, DRAM temperature, and data retention. Based on our observations, we propose a new DRAM energy reduction mechanism, called Voltron. The key idea of Voltron is to use a performance model to determine by how much we can reduce the supply voltage without introducing errors and without exceeding a user-specified threshold for performance loss. Voltron reduces the average system energy by 7.3% while limiting the average system performance loss to only 1.8%, for a variety of workloads.Comment: 25 pages, 25 figures, 7 tables, Proceedings of the ACM on Measurement and Analysis of Computing Systems (POMACS

RowHammer: A Retrospective

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the first) example of how a circuit-level failure mechanism can cause a practical and widespread system security vulnerability. It is the phenomenon that repeatedly accessing a row in a modern DRAM chip causes bit flips in physically-adjacent rows at consistently predictable bit locations. RowHammer is caused by a hardware failure mechanism called {\em DRAM disturbance errors}, which is a manifestation of circuit-level cell-to-cell interference in a scaled memory technology. Researchers from Google Project Zero demonstrated in 2015 that this hardware failure mechanism can be effectively exploited by user-level programs to gain kernel privileges on real systems. Many other follow-up works demonstrated other practical attacks exploiting RowHammer. In this article, we comprehensively survey the scientific literature on RowHammer-based attacks as well as mitigation techniques to prevent RowHammer. We also discuss what other related vulnerabilities may be lurking in DRAM and other types of memories, e.g., NAND flash memory or Phase Change Memory, that can potentially threaten the foundations of secure systems, as the memory technologies scale to higher densities. We conclude by describing and advocating a principled approach to memory reliability and security research that can enable us to better anticipate and prevent such vulnerabilities.Comment: A version of this work is to appear at IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD) Special Issue on Top Picks in Hardware and Embedded Security, 2019. arXiv admin note: substantial text overlap with arXiv:1703.00626, arXiv:1903.1105

Exploiting Row-Level Temporal Locality in DRAM to Reduce the Memory Access Latency

This paper summarizes the idea of ChargeCache, which was published in HPCA 2016 [51], and examines the work's significance and future potential. DRAM latency continues to be a critical bottleneck for system performance. In this work, we develop a low-cost mechanism, called ChargeCache, that enables faster access to recently-accessed rows in DRAM, with no modifications to DRAM chips. Our mechanism is based on the key observation that a recently-accessed row has more charge and thus the following access to the same row can be performed faster. To exploit this observation, we propose to track the addresses of recently-accessed rows in a table in the memory controller. If a later DRAM request hits in that table, the memory controller uses lower timing parameters, leading to reduced DRAM latency. Row addresses are removed from the table after a specified duration to ensure rows that have leaked too much charge are not accessed with lower latency. We evaluate ChargeCache on a wide variety of workloads and show that it provides significant performance and energy benefits for both single-core and multi-core systems.Comment: arXiv admin note: substantial text overlap with arXiv:1609.0723

LISA: Increasing Internal Connectivity in DRAM for Fast Data Movement and Low Latency

This paper summarizes the idea of Low-Cost Interlinked Subarrays (LISA), which was published in HPCA 2016, and examines the work's significance and future potential. Contemporary systems perform bulk data movement movement inefficiently, by transferring data from DRAM to the processor, and then back to DRAM, across a narrow off-chip channel. The use of this narrow channel results in high latency and energy consumption. Prior work proposes to avoid these high costs by exploiting the existing wide internal DRAM bandwidth for bulk data movement, but the limited connectivity of wires within DRAM allows fast data movement within only a single DRAM subarray. Each subarray is only a few megabytes in size, greatly restricting the range over which fast bulk data movement can happen within DRAM. Our HPCA 2016 paper proposes a new DRAM substrate, Low-Cost Inter-Linked Subarrays (LISA), whose goal is to enable fast and efficient data movement across a large range of memory at low cost. LISA adds low-cost connections between adjacent subarrays. By using these connections to interconnect the existing internal wires (bitlines) of adjacent subarrays, LISA enables wide-bandwidth data transfer across multiple subarrays with little (only 0.8%) DRAM area overhead. As a DRAM substrate, LISA is versatile, enabling a variety of new applications. We describe and evaluate three such applications in detail: (1) fast inter-subarray bulk data copy, (2) in-DRAM caching using a DRAM architecture whose rows have heterogeneous access latencies, and (3) accelerated bitline precharging by linking multiple precharge units together. Our extensive evaluations show that each of LISA's three applications significantly improves performance and memory energy efficiency on a variety of workloads and system configurations

Heterogeneous-Reliability Memory: Exploiting Application-Level Memory Error Tolerance

This paper summarizes our work on characterizing application memory error vulnerability to optimize datacenter cost via Heterogeneous-Reliability Memory (HRM), which was published in DSN 2014, and examines the work's significance and future potential. Memory devices represent a key component of datacenter total cost of ownership (TCO), and techniques used to reduce errors that occur on these devices increase this cost. Existing approaches to providing reliability for memory devices pessimistically treat all data as equally vulnerable to memory errors. Our key insight is that there exists a diverse spectrum of tolerance to memory errors in new data-intensive applications, and that traditional one-size-fits-all memory reliability techniques are inefficient in terms of cost. This presents an opportunity to greatly reduce server hardware cost by provisioning the right amount of memory reliability for different applications. Toward this end, in our DSN 2014 paper, we make three main contributions to enable highly-reliable servers at low datacenter cost. First, we develop a new methodology to quantify the tolerance of applications to memory errors. Second, using our methodology, we perform a case study of three new data-intensive workloads (an interactive web search application, an in-memory key--value store, and a graph mining framework) to identify new insights into the nature of application memory error vulnerability. Third, based on our insights, we propose several new hardware/software heterogeneous-reliability memory system designs to lower datacenter cost while achieving high reliability and discuss their trade-offs. We show that our new techniques can reduce server hardware cost by 4.7% while achieving 99.90% single server availability.Comment: 4 pages, 4 figures, summary report for DSN 2014 paper: "Characterizing Application Memory Error Vulnerability to Optimize Datacenter Cost via Heterogeneous-Reliability Memory

PreLatPUF: Exploiting DRAM Latency Variations for Generating Robust Device Signatures

Physically Unclonable Functions (PUFs) are potential security blocks to generate unique and more secure keys in low-cost cryptographic applications. Dynamic random-access memory (DRAM) has been proposed as one of the promising candidates for generating robust keys. Unfortunately, the existing techniques of generating device signatures from DRAM is very slow, destructive (destroy the current data), and disruptive to system operation. In this paper, we propose \textit{precharge} latency-based PUF (PreLatPUF) that exploits DRAM \textit{precharge} latency variations to generate signatures. The proposed PreLatPUF is fast, robust, least disruptive, and non-destructive. The silicon results from commercially available $DDR3$ chips from different manufacturers show that the proposed key generation technique is at least $\sim 1,192X$ faster than the existing approaches, while reliably reproducing the key in extreme operating conditions

Reducing DRAM Refresh Overheads with Refresh-Access Parallelism

This article summarizes the idea of "refresh-access parallelism," which was published in HPCA 2014, and examines the work's significance and future potential. The overarching objective of our HPCA 2014 paper is to reduce the significant negative performance impact of DRAM refresh with intelligent memory controller mechanisms. To mitigate the negative performance impact of DRAM refresh, our HPCA 2014 paper proposes two complementary mechanisms, DARP (Dynamic Access Refresh Parallelization) and SARP (Subarray Access Refresh Parallelization). The goal is to address the drawbacks of state-of-the-art per-bank refresh mechanism by building more efficient techniques to parallelize refreshes and accesses within DRAM. First, instead of issuing per-bank refreshes in a round-robin order, as it is done today, DARP issues per-bank refreshes to idle banks in an out-of-order manner. Furthermore, DARP proactively schedules refreshes during intervals when a batch of writes are draining to DRAM. Second, SARP exploits the existence of mostly-independent subarrays within a bank. With minor modifications to DRAM organization, it allows a bank to serve memory accesses to an idle subarray while another subarray is being refreshed. Our extensive evaluations on a wide variety of workloads and systems show that our mechanisms improve system performance (and energy efficiency) compared to three state-of-the-art refresh policies, and their performance bene ts increase as DRAM density increases.Comment: 9 pages. arXiv admin note: text overlap with arXiv:1712.07754, arXiv:1601.0635