On-the-fly reconfigurable logic

©2005 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. Copyright 2004 Society of Photo-Optical Instrumentation Engineers. This paper was published in Smart Structures, Devices, and Systems II, edited by Said F. Al-Sarawi, Proceedings of SPIE Vol. 5649 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.Reconfigurable Circuit (RC) platforms can be configured to implement complex combinatorial and sequential logic. In this paper we investigate various RC technologies and discuss possible methods to optimise their power, speed and area. To address the drawbacks of existing RC technologies we propose a generic architecture we call "OFRL" (On-the-Fly Reconfigurable Logic). Our objective is to provide a low power, high speed platform for reconfigurable circuit and dynamically reconfigurable logic applications that use fewer transistors than existing technologies.Kamal Rajagopalan, Braden Phillips, and Derek Abbot

What constitutes a nanoswitch? A Perspective

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nano-electronic memory as described in Part II of this book. It seems natural to ask whether these advances in memory devices could also translate into a new class of logic devices. What makes logic devices different from memory is the need for one device to drive another and this calls for gain, directionality and input-output isolation as exemplified by the transistor. With this in mind we will try to present our perspective on how W and R devices in general, spintronic or otherwise, could be integrated into transistor-like switches that can be interconnected to build complex circuits without external amplifiers or clocks. We will argue that the most common switch used to implement digital logic based on complementary metal oxide semiconductor (CMOS) transistors can be viewed as an integrated W-R unit having an input-output asymmetry that give it gain and directionality. Such a viewpoint is not intended to provide any insight into the operation of CMOS switches, but rather as an aid to understanding how W and R units based on spins and magnets can be combined to build transistor-like switches. Next we will discuss the standard W and R units used for magnetic memory devices and present one way to integrate them into a single unit with the input electrically isolated from the output. But we argue that this integrated W-R unit would not provide the key property of gain. We will then show that the recently discovered giant spin Hall effect could be used to construct a W-R unit with gain and suggest other possibilities for spin switches with gain.Comment: 27 pages. To appear in Emerging Nanoelectronic Devices, Editors: An Chen, James Hutchby, Victor Zhirnov and George Bourianoff, John Wiley & Sons (to be published

Polarization based digital optical representation, gates, and processor

A complete all-optical-processing polarization-based binary-logic system, by which any logic gate or processor could be implemented, was proposed. Following the new polarization-based representation, a new Orthoparallel processing technique that allows for the creation of all-optical-processing gates that produce a unique output once in a truth table, was developed. This representation allows for the implementation of all basic 16 logic gates, including the NAND and NOR gates that can be used independently to represent any Boolean expression or function. In addition, the concept of a generalized gate is presented, which opens the door for reconfigurable optical processors and programmable optical logic gates. The gates can be cascaded, where the information is always on the laser beam. The polarization of the beam, and not its intensity, carries the information. The new methodology allows for the creation of multiple-input-multiple-output processors that implement, by itself, any Boolean function, such as specialized or non-specialized microprocessors. The Rail Road (RR) architecture for polarization optical processors (POP) is presented. All the control inputs are applied simultaneously, leading to a single time lag, which leads to a very-fast and glitch-immune POP. A simple and easy-to-follow step-by-step design algorithm is provided for the POP, and design reduction methodologies are discussed. The algorithm lends itself systematically to software programming and computer-assisted design. A completely passive optical switch was also proposed. The switch is used to design completely passive optical gates, including the NAND gate, with their operational speeds only bound by the input beams prorogation delay. The design is used to demonstrate various circuits including the RS latch. Experimental data is reported for the NAND and the Universal gate operating with different functionality. A minute error is recorded in different cases, which can be easily eliminated by a more dedicated manufacturing process. Finally, some field applications are discussed and a comparison between all proposed systems and the current semiconductor devices is conducted based on multiple factors, including, speed, lag, and heat generation.PhDCommittee Chair: Dr. Ali Adibi; Committee Member: Christopher F Barnes; Committee Member: Dr. Hao-Min Zhou; Committee Member: Dr. John Buck; Committee Member: Dr. W. Russell Calle

The 2020 magnetism roadmap

Following the success and relevance of the 2014 and 2017 Magnetism Roadmap articles, this 2020 Magnetism Roadmap edition takes yet another timely look at newly relevant and highly active areas in magnetism research. The overall layout of this article is unchanged, given that it has proved the most appropriate way to convey the most relevant aspects of today's magnetism research in a wide variety of sub-fields to a broad readership. A different group of experts has again been selected for this article, representing both the breadth of new research areas, and the desire to incorporate different voices and viewpoints. The latter is especially relevant for thistype of article, in which one's field of expertise has to be accommodated on two printed pages only, so that personal selection preferences are naturally rather more visible than in other types of articles. Most importantly, the very relevant advances in the field of magnetism research in recent years make the publication of yet another Magnetism Roadmap a very sensible and timely endeavour, allowing its authors and readers to take another broad-based, but concise look at the most significant developments in magnetism, their precise status, their challenges, and their anticipated future developments. While many of the contributions in this 2020 Magnetism Roadmap edition have significant associations with different aspects of magnetism, the general layout can nonetheless be classified in terms of three main themes: (i) phenomena, (ii) materials and characterization, and (iii) applications and devices. While these categories are unsurprisingly rather similar to the 2017 Roadmap, the order is different, in that the 2020 Roadmap considers phenomena first, even if their occurrences are naturally very difficult to separate from the materials exhibiting such phenomena. Nonetheless, the specifically selected topics seemed to be best displayed in the order presented here, in particular, because many of the phenomena or geometries discussed in (i) can be found or designed into a large variety of materials, so that the progression of the article embarks from more general concepts to more specific classes of materials in the selected order. Given that applications and devices are based on both phenomena and materials, it seemed most appropriate to close the article with the application and devices section (iii) once again. The 2020 Magnetism Roadmap article contains 14 sections, all of which were written by individual authors and experts, specifically addressing a subject in terms of its status, advances, challenges and perspectives in just two pages. Evidently, this two-page format limits the depth to which each subject can be described. Nonetheless, the most relevant and key aspects of each field are touched upon, which enables the Roadmap as whole to give its readership an initial overview of and outlook into a wide variety of topics and fields in a fairly condensed format. Correspondingly, the Roadmap pursues the goal of giving each reader a brief reference frame of relevant and current topics in modern applied magnetism research, even if not all sub-fields can be represented here. The first block of this 2020 Magnetism Roadmap, which is focussed on (i) phenomena, contains five contributions, which address the areas of interfacial Dzyaloshinskii-Moriya interactions, and two-dimensional and curvilinear magnetism, as well as spin-orbit torque phenomena and all optical magnetization reversal. All of these contributions describe cutting edge aspects of rather fundamental physical processes and properties, associated with new and improved magnetic materials' properties, together with potential developments in terms of future devices and technology. As such, they form part of a widening magnetism 'phenomena reservoir' for utilization in applied magnetism and related device technology. The final block (iii) of this article focuses on such applications and device-related fields in four contributions relating to currently active areas of research, which are of course utilizing magnetic phenomena to enable specific functions. These contributions highlight the role of magnetism or spintronics in the field of neuromorphic and reservoir computing, terahertz technology, and domain wall-based logic. One aspect common to all of these application-related contributions is that they are not yet being utilized in commercially available technology; it is currently still an open question, whether or not such technological applications will be magnetism-based at all in the future, or if other types of materials and phenomena will yet outperform magnetism. This last point is actually a very good indication of the vibrancy of applied magnetism research today, given that it demonstrates that magnetism research is able to venture into novel application fields, based upon its portfolio of phenomena, effects and materials. This materials portfolio in particular defines the central block (ii) of this article, with its five contributions interconnecting phenomena with devices, for which materials and the characterization of their properties is the decisive discriminator between purely academically interesting aspects and the true viability of real-life devices, because only available materials and their associated fabrication and characterization methods permit reliable technological implementation. These five contributions specifically address magnetic films and multiferroic heterostructures for the purpose of spin electronic utilization, multi-scale materials modelling, and magnetic materials design based upon machine-learning, as well as materials characterization via polarized neutron measurements. As such, these contributions illustrate the balanced relevance of research into experimental and modelling magnetic materials, as well the importance of sophisticated characterization methods that allow for an ever-more refined understanding of materials. As a combined and integrated article, this 2020 Magnetism Roadmap is intended to be a reference point for current, novel and emerging research directions in modern magnetism, just as its 2014 and 2017 predecessors have been in previous years

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure

Artificial Intelligence in Materials Science: Applications of Machine Learning to Extraction of Physically Meaningful Information from Atomic Resolution Microscopy Imaging

Materials science is the cornerstone for technological development of the modern world that has been largely shaped by the advances in fabrication of semiconductor materials and devices. However, the Moore’s Law is expected to stop by 2025 due to reaching the limits of traditional transistor scaling. However, the classical approach has shown to be unable to keep up with the needs of materials manufacturing, requiring more than 20 years to move a material from discovery to market. To adapt materials fabrication to the needs of the 21st century, it is necessary to develop methods for much faster processing of experimental data and connecting the results to theory, with feedback flow in both directions. However, state-of-the-art analysis remains selective and manual, prone to human error and unable to handle large quantities of data generated by modern equipment. Recent advances in scanning transmission electron and scanning tunneling microscopies have allowed imaging and manipulation of materials on the atomic level, and these capabilities require development of automated, robust, reproducible methods.Artificial intelligence and machine learning have dealt with similar issues in applications to image and speech recognition, autonomous vehicles, and other projects that are beginning to change the world around us. However, materials science faces significant challenges preventing direct application of the such models without taking physical constraints and domain expertise into account.Atomic resolution imaging can generate data that can lead to better understanding of materials and their properties through using artificial intelligence methods. Machine learning, in particular combinations of deep learning and probabilistic modeling, can learn to recognize physical features in imaging, making this process automated and speeding up characterization. By incorporating the knowledge from theory and simulations with such frameworks, it is possible to create the foundation for the automated atomic scale manufacturing

Structural, magnetic and electronic properties of Re-based double perovskites

Este trabajo recoge la caracterización estructural y el estudio de las propiedades magnéticas de muestras de dobles perovskitas basadas en Re: la serie A2FeReO6 (donde A = Ba, Sr o Ca), el compuesto Sr2CrReO6 puro y la serie Sr2-xLnxCrReO6 (con Ln = La, Nd o Sm). Para ello se han utilizado varias técnicas experimentales (tanto macroscópicas como de sonda local) que están explicadas detalladamente en la parte introductoria. El volumen contiene también una introducción teórica en la que se explican varios fenómenos físicos, importantes para las propiedades físicas de los compuestos estudiados