308 research outputs found

    Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources

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    Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications. Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m. However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time. This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design. The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed. To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis. In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications

    Beam scanning by liquid-crystal biasing in a modified SIW structure

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    A fixed-frequency beam-scanning 1D antenna based on Liquid Crystals (LCs) is designed for application in 2D scanning with lateral alignment. The 2D array environment imposes full decoupling of adjacent 1D antennas, which often conflicts with the LC requirement of DC biasing: the proposed design accommodates both. The LC medium is placed inside a Substrate Integrated Waveguide (SIW) modified to work as a Groove Gap Waveguide, with radiating slots etched on the upper broad wall, that radiates as a Leaky-Wave Antenna (LWA). This allows effective application of the DC bias voltage needed for tuning the LCs. At the same time, the RF field remains laterally confined, enabling the possibility to lay several antennas in parallel and achieve 2D beam scanning. The design is validated by simulation employing the actual properties of a commercial LC medium

    Plastic Optical Fibers as Passive Optical Front-Ends for Visible Light Communication

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    Recent Advances in the mm-Wave Array for Mobile Phones

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    With the development of communication system to the mm-wave band, the antenna design in the mm-wave band for mobile phones encounters new requirements and challenges. The mm-wave characteristics of short wavelength, high free-space path loss, and easy-to-be-blocking usually require mm-wave antennas with high gain and beam-scanning capability. Also, considering the very limited space occupied by antennas in mobile phones and the massive production of consumer electronics, small size, low cost, multiband, multi-polarization, and wide beam steering becomes the main key point of mm-wave array performance. In addition, as a special situation of the mobile antenna, the analysis of effect of the human tissue on the antenna performance is also important. So, in this chapter, a comprehensive summary on the recent advances in the mm-wave array for mobile phones including single-band, dual-band, and reconfigurable design of broadside array, horizontal polarized, vertical polarized, and dual-polarized design of endfire array, co-design of mm-wave array with lower band antenna, and user influence are summarized

    Exploiting Simultaneous Transmitting and Reflecting Reconfigurable Intelligent Surfaces (STAR-RISs) in Wireless Communications

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    As of 2023, wireless technology has become an essential part of work and life for people in most parts of the world. The concept of reconfigurable intelligent surfaces (RISs) as a means of manipulating the wireless communication channel emerged in early 2019. RISs are two-dimensional material structures composed of a large number of low-cost programmable elements. The introduction of RISs presents a paradigm shift in wireless transmissions, as it allows for beneficial reconfiguration of the wireless environment between transmitters and receivers. However, due to the nascent stage of RIS research and development, there exists a knowledge gap between the physical/hardware aspect and the communication aspect of RISs, posing challenges in performance analysis and system optimization for RIS-aided communication networks. This thesis leverages knowledge in Electromagnetics, antenna theory, and information theory to provide a review of the fundamentals of RISs. Building on the understanding of RISs, this thesis proposes and studies the novel concept of simultaneous transmitting and reflecting reconfigurable intelligent surface (STAR-RISs). Specifically, the device, channel, and signal modeling for STAR-RISs are the focus of this thesis. Based on the proposed models, the performance of STAR-RIS in terms of their power scaling law, diversity gain, multiplexing gain, and coverage are analyzed. First, this thesis proposes the novel concept of STAR-RIS. To investigate the performance of STAR-RIS-aided wireless communications, independent and correlated transmission and reflection phase-shift models are proposed. Furthermore, considering a STAR-RIS-aided two-user communication system employing orthogonal multiple access (OMA) and non-orthogonal multiple access (NOMA), three practical phase-shift configuration strategies are introduced. To evaluate and compare the performance achieved with different STAR-RIS phase-shift configuration strategies, the asymptotic behavior of the outage probabilities for both OMA and NOMA are derived. Moreover, the diversity orders and the power scaling laws for the considered phase-shift configuration strategies are investigated. Second, this thesis investigates two STAR-RIS variants: the dual-sided STAR-RISs and the active STAR-RISs. Hardware models and signal models are proposed for both variants. For dual-sided STAR-RISs, expressions for the outage probability of a STAR-RIS assisted two-user uplink communication system in high transmit SNR regime are derived. It is also revealed that the error floor for the uplink NOMA transmission can be lowered by adjusting the power ratios of STAR elements. For active STAR-RISs, expressions for the asymptotic received SNRs and outage probabilities of both users for the case of coupled phase-shift and independent phase-shift are derived. It is proved that both user can achieve full diversity order under independent phase-shift active STAR-RIS. Third and last, a channel model based on Green's function method is proposed for investigating the performance limit of metasurface-based STAR-RISs. Instead of modeling the RIS elements with the transmission and reflection coefficients, this thesis uses the distribution of the induced electric currents within the metasurface-based RIS. This thesis reveals how transmitting-only RISs, reflecting-only RISs and STAR-RISs can be achieved by configuring the distribution of the induced electric current. For the single-user scenario with transmitting/reflecting-only RISs, the upper bound of the end-to-end channel gain is derived by choosing the current distribution that is optimized for the receiver. In addition, the position of the near-field and far-field boundary, the maximum DoF of the channel, and the power scaling law are derived. It was shown that the size of RIS, the carrier signal frequency, and the size of the receiver all affect the above performance metrics

    EM-driven miniaturization of high-frequency structures through constrained optimization

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    The trends afoot for miniaturization of high-frequency electronic devices require integration of active and passive high-frequency circuit elements within a single system. This high level of accomplishment not only calls for a cutting-edge integration technology but also necessitates accommodation of the corresponding circuit components within a restricted space in applications such as implantable devices, internet of things (IoT), or 5G communication systems. At the same time, size reduction does not remain the only demand. The performance requirements of the abovementioned systems form a conjugate demand to that of the size reduction, yet with a contrasting nature. A compromise can be achieved through constrained numerical optimization, in which two kinds of constrains may exist: equality and inequality ones. Still, the high cost of electromagnetic-based (EM-based) constraint evaluations remains an obstruction. This issue can be partly mitigated by implicit constraint handling using the penalty function approach. Nevertheless, securing its performance requires expensive guess-work-based identification of the optimum setup of the penalty coefficients. An additional challenge lies in allocating the design within or in the vicinity of a thin feasible region corresponding to equality constraints. Furthermore, multimodal nature of constrained miniaturization problems leads to initial design dependency of the optimization results. Regardless of the constraint type and the corresponding treatment techniques, the computational expenses of the optimization-based size reduction persist as a main challenge. This thesis attempts to address the abovementioned issues specifically pertaining to optimization-driven miniaturization of high frequency structures by developing relevant algorithms in a proper sequence. The first proposed approach with automated adjustment of the penalty functions is based on the concept of sufficient constraint violation improvement, thereby eliminating the costly initial trial-and-error stage for the identification of the optimum setup of the penalty factors. Another introduced approach, i.e., correction-based treatment of the equality constraints alleviates the difficulty of allocating the design within a thin feasible region where designs satisfying the equality constraints reside. The next developed technique allows for global size reduction of high-frequency components. This approach not only eliminates the aforementioned multimodality issues, but also accelerates the overall global optimization process by constructing a dimensionality-reduced surrogate model over a pre-identified feasible region as compared to the complete parameter search space. Further to the latter, an optimization framework employing multi-resolution EM-model management has been proposed to address the high cost issue. The said technique provides nearly 50 percent average acceleration of the optimization-based miniaturization process. The proposed technique pivots upon a newly-defined concept of model-fidelity control based on a combination of algorithmic metrics, namely convergence status and constraint violation level. Numerical validation of the abovementioned algorithms has also been provided using an extensive set of high-frequency benchmark structures. To the best of the author´s knowledge, the presented study is the first investigation of this kind in the literature and can be considered a contribution to the state of the art of automated high-frequency design and miniaturization

    1-D broadside-radiating leaky-wave antenna based on a numerically synthesized impedance surface

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    A newly-developed deterministic numerical technique for the automated design of metasurface antennas is applied here for the first time to the design of a 1-D printed Leaky-Wave Antenna (LWA) for broadside radiation. The surface impedance synthesis process does not require any a priori knowledge on the impedance pattern, and starts from a mask constraint on the desired far-field and practical bounds on the unit cell impedance values. The designed reactance surface for broadside radiation exhibits a non conventional patterning; this highlights the merit of using an automated design process for a design well known to be challenging for analytical methods. The antenna is physically implemented with an array of metal strips with varying gap widths and simulation results show very good agreement with the predicted performance

    High Efficiency Low Power Rectifiers and ZVS DC to DC Converters for RF Energy Harvesting

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    In recent years, advancements in modern technologies have grown the demand for low-power wireless devices. Considering that enhancing the lifetime of the required battery to maintain the operation of these devices is still impractical, harvesting energy from ambient sources has become a promising solution to power portable low power electronic devices. Harvesting ambient energy from the electromagnetic wave (EM), which is referred to as radio frequency energy harvesting (RFEH), is one of the most popular power extracting methods. Scavenging energy can be used to fully supply the power required for wearable electronics devices, RFID, medical implantable devices, wireless sensors, internet of things (IoT) etc. RF energy is readily available in urban environments due to the abundant existence of HF and UHF technologies. Therefore, there is a great interest in studying systems working in UHF bands, including 300MHz to 3GHz frequencies. Radio frequency energy harvesting is a method which converts the received signals into electricity. This technique offers various environmentally friendly alternative energy sources. Specifically, RFEH has interesting attributes that make it very practical for low-power electronics and wireless sensor networks (WSNs). Ambient RF energy can be provided by commercial RF broadcasting stations such as Wi-Fi, GSM, radar or TV. In this study, particular attention is given to design efficient low power circuits suitable to be applied for RFEH as a green technology, which is very suitable for overcoming problems such as powering wireless sensors located in inaccessible places or harsh environments, the possibility to power directly electronic devices, recharge batteries and etc. In RFEH, it is very important to enhance the efficiency of the circuits and systems to maximize the amount of harvested energy. This thesis is mainly concerned with the design, simulation, and implementation of AC to DC circuits including phase shifter, rectifier, and DC to DC converter which is specifically designed for RFEH. It can be applied in various applications such as telecommunications, wireless sensors, medical devices, wireless charging, Internet of Things (IoT) and etc. In the designed system in this thesis, the signal must be passed through a phase shifter, rectifier, and voltage multiplier to reach the required level of output voltage. In another word, this system rectifies the sinusoidal AC waveform to DC and multiplies it to get higher voltages. In this thesis, we propose 1 and 7-stage rectifiers, phase shifters and isolated/non-isolated DC to DC converters will be investigated individually in a general manner and integrated together to have the desired range of outputs for considered applications. This research methodology has three major phases: Phase 1: Theoretical analyses, Phase 2: Simulation investigations and Phase 3: Practical verification. This thesis presents a review on the history of different circuits used to design a low power system for EH. Certain achievements in recent decades make power harvesting a reality, capable of providing alternative sources of energy for a wider range of applications. This review provides a summary of RFEH technologies to use as a guide for the design of RFEH units. Additionally, comprehensive analysis and discussions of various designs of rectifiers, isolated and non-isolated DC to DC converters and phase shifters in addition to their trade-offs for RF energy harvesting purposes are included. In this thesis, novel designs of Dickson rectifiers with high voltage gain and efficiency operating with an input frequency of 915MHz is presented. The proposed circuits introduce a new method of deriving output characteristics of rectification circuit in terms of voltage. The design consists of different stages of the Dickson voltage multiplier. The rectifiers benefit from two input AC sources with 180° phase shift. This Dickson circuit is further discussed in two levels; the first one is a 1-stage rectifier operating with Schottky diodes or diode-connected MOSFETs, and the second is a 7-stage rectifier discussed with both Schottky diodes and diode-connected MOSFETs producing higher output voltages. Furthermore, the prototype of 1-stage rectifier is presented where the input voltage is between -10dBm and 2dBm and the output voltage gained is from 318mV to 1700mV, respectively. Also, the prototype of 7-stage rectifier is presented where the input voltage is -10dBm, -8dBm and -6dBm and the output voltage is gained 1220mV, 1330mV and 1550mV, respectively. Additionally, a new non-isolated high voltage gain, high efficiency zero voltage switching (ZVS) resonant DC to DC converter working under ZVS condition is introduced, which can work in high frequencies with high power conversion rate as well as low losses. The proposed converter can provide 5V output from 350mV input voltage with efficiency of 72.8%. Furthermore, we proposed an isolated DC to DC converter which provides the output voltage of 6V with efficiency of 68%. Due to have an isolation transformer, this converter prevents electric shocks which makes it suitable for applications requiring more safety. All the theoretical analyses are verified by MATLAB and circuits are simulated in PSIM. In addition, two combinations of high voltage gain circuits are introduced for low power applications such as RFEH. The first combination consists of a phase shifter, 1-stage rectifier and resonant ZVS DC to DC converter which has an output voltage of 6V with an efficiency of 71%. The second consists of a phase shifter, 1-stage rectifier and isolated resonant ZVS DC to DC converter with output voltage and efficiency of 5V and 65%, respectively. In conclusion, this thesis is presented in 6 chapters discussing the designed high voltage gain high efficiency low power circuits to convert AC input with frequency of 915MHz to DC output. The circuits can be applied in different low power applications such as energy harvesting systems specifically RFEH

    Plastic Optical Fibers as Passive Optical Front-Ends for Visible Light Communication

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