DSA-aware multiple patterning for the manufacturing of vias: Connections to graph coloring problems, IP formulations, and numerical experiments

In this paper, we investigate the manufacturing of vias in integrated circuits with a new technology combining lithography and Directed Self Assembly (DSA). Optimizing the production time and costs in this new process entails minimizing the number of lithography steps, which constitutes a generalization of graph coloring. We develop integer programming formulations for several variants of interest in the industry, and then study the computational performance of our formulations on true industrial instances. We show that the best integer programming formulation achieves good computational performance, and indicate potential directions to further speed-up computational time and develop exact approaches feasible for production

VLSI Routing for Advanced Technology

Routing is a major step in VLSI design, the design process of complex integrated circuits (commonly known as chips). The basic task in routing is to connect predetermined locations on a chip (pins) with wires which serve as electrical connections. One main challenge in routing for advanced chip technology is the increasing complexity of design rules which reflect manufacturing requirements. In this thesis we investigate various aspects of this challenge. First, we consider polygon decomposition problems in the context of VLSI design rules. We introduce different width notions for polygons which are important for width-dependent design rules in VLSI routing, and we present efficient algorithms for computing width-preserving decompositions of rectilinear polygons into rectangles. Such decompositions are used in routing to allow for fast design rule checking. A main contribution of this thesis is an O(n) time algorithm for computing a decomposition of a simple rectilinear polygon with n vertices into O(n) rectangles, preseverving two-dimensional width. Here the two-dimensional width at a point of the polygon is defined as the edge length of a largest square that contains the point and is contained in the polygon. In order to obtain these results we establish a connection between such decompositions and Voronoi diagrams. Furthermore, we consider implications of multiple patterning and other advanced design rules for VLSI routing. The main contribution in this context is the detailed description of a routing approach which is able to manage such advanced design rules. As a main algorithmic concept we use multi-label shortest paths where certain path properties (which model design rules) can be enforced by defining labels assigned to path vertices and allowing only certain label transitions. The described approach has been implemented in BonnRoute, a VLSI routing tool developed at the Research Institute for Discrete Mathematics, University of Bonn, in cooperation with IBM. We present experimental results confirming that a flow combining BonnRoute and an external cleanup step produces far superior results compared to an industry standard router. In particular, our proposed flow runs more than twice as fast, reduces the via count by more than 20%, the wiring length by more than 10%, and the number of remaining design rule errors by more than 60%. These results obtained by applying our multiple patterning approach to real-world chip instances provided by IBM are another main contribution of this thesis. We note that IBM uses our proposed combined BonnRoute flow as the default tool for signal routing

Design automation algorithms for advanced lithography

In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lithography (193i) has reached its printability limit. To continue the scaling with Moore's law, different kinds of advanced lithography have been proposed, such as multiple patterning lithography (MPL), extreme ultraviolet (EUV), electron beam lithography (EBL) and directed self-assembly (DSA). While these new technologies create enormous opportunities, they also pose great design challenges due to their unique process characteristics and stringent constraints. In order to smoothly adopt these advanced lithography technologies in integrated circuit (IC) fabrication, effective electronic design automation (EDA) algorithms must be designed and integrated into computer-aided design (CAD) tools to address the underlying design constraints and help the circuit designer to better facilitate the lithography process. In this thesis, we focus on algorithmic design and efficient implementation of EDA algorithm for advanced lithography, including directed self-assembly (DSA) and self-aligned double patterning (SADP), to conquer the physical challenges and improve the manufacturing yield. The first advanced lithography technology we explore is self-aligned double patterning (SADP). SADP has the significant advantage over traditional litho-etch-litho-etch (LELE) double patterning in its ability to eliminate overlay, making it a preferable DPL choice for the 14 nm technology node. As in any DPL technology, layout decomposition is the key problem. While the layout decomposition problem for LELE DPL has been well studied in the literature, only a few attempts have been made for the SADP layout decomposition problem. This thesis studies the SADP decomposition problem in different scenarios. SADP has been successfully deployed in 1D patterns and has several applications; however, applying it to 2D patterns turns out to be much more difficult. All previous exact algorithms were based on computationally expensive methods such as SAT or ILP. Other previous algorithms were heuristics without a guarantee that an overlay-free solution can be found even if one exists. The SADP decomposition problem on general 2D layout is proven to be NP-complete. However, we show that if we restrict the overlay, the problem is polynomial-time solvable, and present an exact algorithm to determine if a given 2D layout has a no-overlay SADP decomposition. When designing the layout decomposition algorithms, it is usually useful to take the layout structure into consideration. As most of the current IC layouts adopt a row-based standard cell design style, we can take advantage of its characteristics and design more efficient algorithms compared to the algorithms for general 2D patterns. In particular, the fixed widths of standard cells and power tracks on top and bottom of cells suggest that improvements can be made over the algorithms for general decomposition problem. We present a shortest-path based polynomial time SADP decomposition algorithm for row-based standard cell layout that efficiently finds decompositions with minimum overlay violations. Our proposed algorithm takes advantage of the fixed width of the cells and the alternating power tracks between the rows to limit the possible decompositions and thus achieve high efficiency. The next advanced lithography technology we discuss in the thesis is directed self-assembly (DSA). Block copolymer directed self-assembly (DSA) is a promising technique for patterning contact holes and vias in 7 nm technology nodes. To pattern contacts/vias with DSA, guiding templates are usually printed first with conventional lithography (193i) that has a coarser pitch resolution. Contact holes are then patterned with DSA process. The guiding templates play the role of defining the DSA patterns, which have a finer resolution than the templates. As a result, different patterns can be obtained through controlling the templates. It is shown that DSA lithography is very promising in patterning contacts/vias in 7 nm technology node. However, to utilize DSA for full-chip manufacturing, EDA for DSA must be fully explored because EDA is the key enabler for manufacturing, and the EDA research for DSA is still lagging behind. To pattern the contact layer with DSA, we must ensure that all the contacts in the layout require only feasible DSA templates. Nevertheless, the original layout may not be designed in a DSA-friendly way. However, even with an optimized library, infeasible templates may be introduced after the physical design phase. We propose a simulated-annealing (SA) based scheme to perform full-chip level contact layer optimization. According to the experimental results, the DSA conflicts in the contact layer are reduced by close to 90% on average after applying the proposed optimization algorithm. It is a current trend that industry is transiting from the random 2D designs to highly regular 1D gridded designs for sub-20 nm nodes and fabricating circuit designs with print-cut technology. In this process, the randomly distributed cuts may be too dense to be printed by single patterning lithography. DSA has proven its success in contact hole patterning, and can be easily expanded to cut printing for 1D gridded designs. Nevertheless, the irregular distribution of cuts still presents a great challenge for DSA, as the self-assembly process usually forms regular patterns. As a result, the cut layer must be optimized for the DSA process. To address the above problem, we propose an efficient algorithm to optimize cut layers without hurting the original circuit logic. Our work utilizes a technique called `line-end extension' to move the cuts and extend the functional wires without changing the original functionality of the circuit. Consequently, the cuts can be redistributed and grouped into valid DSA templates. Multiple patterning lithography has been widely adopted for today's circuit manufacturing. However, increasing the number of masks will make the manufacturing process more expensive. By incorporating DSA into the multiple patterning process, it is possible to reduce the number of masks and achieve a cost-effective solution. We study the decomposition problem for the contact layer in row-based standard cell layout with DSA-MP complementary lithography. We explore several heuristic-based approaches, and propose an algorithm that decomposes a standard cell row optimally in polynomial-time. Our experiments show that our algorithm is guaranteed to find a minimum cost solution if one exists, while the heuristic cannot or only finds a sub-optimal solution. Our results show that the DSA-MP complementary approach is very promising for the future advanced nodes. As in any lithography technique, the process variation control and proximity correction are the most important issues. As the DSA templates are patterned by conventional lithography, the patterned templates are prone to deviate from mask shapes due to process variations, which will ultimately affect the contacts after the DSA process even for the same type of template. Therefore, in order to enable the DSA technology in contact/via layer printing, it is extremely important to accurately model and detect hotspots, as well as estimate the contact pitch and locations during the verification phase. We propose a machine learning based design automation framework for DSA verification. A novel DSA model and a set of features are included. We implemented the proposed ML-based flow and performed extensive experiments on comparing the performances of learning algorithms and features. The experimental results show that our approach is much more efficient than the traditional approach, and can produce highly accurate results

Alternative Lithographic Methods for Variable Aspect Ratio Vias

The foundation of semiconductor industry has historically been driven by scaling. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Aggressive reductions in memory cell size have resulted in systems with diminishing area between parallel bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area, a product of their two domain critical dimension image. To accommodate these trends there has been a shift toward the implementation of elliptical contact features. This empowers designers to maximize the use of free space between bit/word lines and gate stacks while preserving contact area; effectively reducing the minor via axis dimension while maintaining a patternable threshold in increasingly dense circuitry. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. This work separately investigates two unique, non-traditional lithographic techniques in the integration of an optical vortex mask as well as a polymer assembly system as means to augment ellipticity while facilitating contact feature scaling. This document affords a fundamental overview of imaging theory, details previous literature as to the technological trends enabling the resolving of contact features and demonstrates simulated & empirical evidence that the described methods have great potential to extend the resolution of variable aspect ratio vias using lithographic technologies