Spin-Dependent Electronic Transport in Noncollinear Antiferromagnetic Antiperovskites

Spin-dependent properties are the heart of spintronic devices. Spintronics exploits electron’s spin, in addition to charge, to process and store the information. Recently, antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM order parameter (the Néel vector) is exploited to control spin-dependent transport properties. Due to being robust against magnetic perturbations, producing no stray fields, and exhibiting ultrafast dynamics, antiferromagnets can serve as promising functional materials for spintronic applications. Among antiferromagnets, high Néel temperature noncollinear antiperovskites ANMn3 (A = Ga, Ni, Sn, and Pt) are interesting due to their magnetic group symmetry supporting non-trivial spin-dependent transport phenomena. These materials have structural similarity to perovskites which allows their epitaxial deposition on perovskite substrates. Using symmetry analyses, first-principles methods based on density-functional theory, tight-binding Hamiltonian models, and magnetization dynamics techniques, this dissertation makes predictions and provides insights into different spin-dependent phenomena in non-collinear AFM antiperovskites. The results are as follow. It is shown that the noncollinear AFM phase of the antiperovskites exhibits sizable anomalous Hall conductivity (AHC), while the phase has zero AHC by symmetry. The Néel vector can be switched on the picosecond timescale using a spin torque generated by a spin polarized charge current. The critical switching current density can be tuned by ANMn3 stoichiometry engineering. It is demonstrated that the noncollinear AFM phase of GaNMn3 exhibits unconventional spin Hall conductivity, in addition to the conventional existing in the paramagnetic phase. Due to its out-of-plane spin polarization, spin Hall current exerts a spin torque that can switch out-of-plane magnetization in an adjacent ferromagnet. This unconventional spin torque has been realized experimentally using spin torque ferromagnetic resonance measurements carried out by our collaborators at University of Wisconsin-Madison. It is shown that noncollinear AFM antiperovskites allow generation of a spin-polarized longitudinal charge current like ferromagnets. The magnitude of the net spin polarization depends on crystallographic direction. These results demonstrate that AFM antiperovskites can be used as a spin source, spin-torque generator, and information carrier in spintronic devices. Advisor: Evgeny Tsymba

Letter from the Special Issue Editor

Editorial work for DEBULL on a special issue on data management on Storage Class Memory (SCM) technologies

Magnetic Functional Materials: Synthesis, Characterization and Application

Magnetic functional materials are widely used in energy, information, and materials science and technology. There are many kinds of magnetic functional materials, and their progress is rapid. Magnetic functional materials have attracted a great deal of attention regarding their applications. Magnetic behaviors are widespread in a variety of materials, such as metals, ceramics, organics, and emerging 2D materials. The applications of magnetic materials include memories, sensors, magnetic refrigeration, drug delivery, electrochemistry, environmental protection, energy storage, and more. This Special Issue, “Magnetic Functional Materials: Synthesis, Characterization and Application”, addresses existing knowledge gaps and aids advance deployment of magnetic functional materials. It consists of nine peer-reviewed papers and one editorial that cover a range of subjects and applications related to magnetic functional materials

A Contribution Towards Intelligent Autonomous Sensors Based on Perovskite Solar Cells and Ta2O5/ZnO Thin Film Transistors

Many broad applications in the field of robotics, brain-machine interfaces, cognitive computing, image and speech processing and wearables require edge devices with very constrained power and hardware requirements that are challenging to realize. This is because these applications require sub-conscious awareness and require to be always “on”, especially when integrated with a sensor node that detects an event in the environment. Present day edge intelligent devices are typically based on hybrid CMOS-memristor arrays that have been so far designed for fast switching, typically in the range of nanoseconds, low energy consumption (typically in nano-Joules), high density and endurance (exceeding 1015 cycles). On the other hand, sensory-processing systems that have the same time constants and dynamics as their input signals, are best placed to learn or extract information from them. To meet this requirement, many applications are implemented using external “delay” in the memristor, in a process which enables each synapse to be modeled as a combination of a temporal delay and a spatial weight parameter. This thesis demonstrates a synaptic thin film transistor capable of inherent logic functions as well as compute-in-memory on similar time scales as biological events. Even beyond a conventional crossbar array architecture, we have relied on new concepts in reservoir computing to demonstrate a delay system reservoir with the highest learning efficiency of 95% reported to date, in comparison to equivalent two terminal memristors, using a single device for the task of image processing. The crux of our findings relied on enhancing our capability to model the unique physics of the device, in the scope of the current thesis, that is not amenable to conventional TCAD simulations. The model provides new insight into the redox characteristics of the gate current and paves way for assessment of device performance in compute-in-memory applications. The diffusion-based mechanism of the device, effectively enables time constants that have potential in applications such as gesture recognition and detection of cardiac arrythmia. The thesis also reports a new orientation of a solution processed perovskite solar cell with an efficiency of 14.9% that is easily integrable into an intelligent sensor node. We examine the influence of the growth orientation on film morphology and solar cell efficiency. Collectively, our work aids the development of more energy-efficient, powerful edge-computing sensor systems for upcoming applications of the IOT

Magnetic Tunnel Junctions based on spinel ZnxFe3-xO4: Magnetic Tunnel Junctions based onspinel ZnxFe3-xO4

Die vorliegende Arbeit befasst sich mit magnetischen Tunnelkontakten (magnetic tunnel junctions, MTJs) auf Basis des Oxids Zinkferrit (ZnxFe3-xO4). Dabei soll das Potential dieses Materials durch die Demonstration des Tunnelmagnetowiderstandes (tunnel magnetoresistance, TMR) in zinkferritbasierten Tunnelkontakten gezeigt werden. Dazu wurde ein Probendesign für MTJs auf Basis der „pseudo spin valve“-Geometrie entwickelt. Die Basis für dieseStrukturen ist ein Dünnfilmstapel aus MgO (Substrat) / TiN / ZnxFe3-xO4 / MgO / Co. Dieser ist mittels gepulster Laserabscheidung (pulsed laser deposition, PLD) hergestellt. Im Rahmen dieser Arbeit wurden die strukturellen, elektrischen und magnetischen Eigenschaften der Dünnfilme untersucht. Des weiteren wurden die fertig prozessierten MTJ-Bauelemente an einem im Rahmen dieser Arbeit entwickeltem und aufgebautem TMR-Messplatz vermessen. Dabei ist es gelungen einen TMR-Effekt von 0.5% in ZnxFe3-xO4-basierten MTJs nachzuweisen. Das erste Kapitel der Arbeit gibt eine Einführung in die spintronischen Effekte Riesenmagnetowiderstand (giant magnetoresistance, GMR) und Tunnelmagnetowiderstand (TMR). Deren technologische Anwendungen sowie die grundlegenden physikalischen Effekte und Modelle werden diskutiert. Das zweite Kapitel gibt eine Übersicht über die Materialklasse der spinellartigen Ferrite. Der Fokus liegt auf den Materialien Magnetit (Fe3O4) sowie Zinkferrit (ZnxFe3-xO4). Die physikalischen Modelle zur Beschreibung der strukturellen, magnetischen und elektrischen Eigenschaften dieser Materialien werden dargelegt sowie ein Literaturüberblick über experimentelle und theoretische Arbeiten gegeben. Im dritten Kapitel werden die im Rahmen dieser Arbeit verwendeten Probenpräparations- und Charakterisierungsmethoden vorgestellt und technische Details sowie physikalische Grundlagen erläutert. Die Entwicklung eines neuen Probendesigns zum Nachweis des TMR-Effekts in ZnxFe3-xO4-basierten MTJs ist Gegenstand des vierten Kapitels. Die Entwicklung des Probenaufbaus sowie die daraus resultierende Probenprozessierung werden beschrieben. Die beiden letzten Kapitel befassen sich mit der strukturellen, elektrischen und magnetischen Charakterisierung der mittels PLD abgeschiedenen Dünnfilme sowie der Tunnelkontaktstrukturen

Ferroelectrics

Ferroelectric materials exhibit a wide spectrum of functional properties, including switchable polarization, piezoelectricity, high non-linear optical activity, pyroelectricity, and non-linear dielectric behaviour. These properties are crucial for application in electronic devices such as sensors, microactuators, infrared detectors, microwave phase filters and, non-volatile memories. This unique combination of properties of ferroelectric materials has attracted researchers and engineers for a long time. This book reviews a wide range of diverse topics related to the phenomenon of ferroelectricity (in the bulk as well as thin film form) and provides a forum for scientists, engineers, and students working in this field. The present book containing 24 chapters is a result of contributions of experts from international scientific community working in different aspects of ferroelectricity related to experimental and theoretical work aimed at the understanding of ferroelectricity and their utilization in devices. It provides an up-to-date insightful coverage to the recent advances in the synthesis, characterization, functional properties and potential device applications in specialized areas