291 research outputs found
Radiation Risks and Mitigation in Electronic Systems
Electrical and electronic systems can be disturbed by radiation-induced
effects. In some cases, radiation-induced effects are of a low probability and
can be ignored; however, radiation effects must be considered when designing
systems that have a high mean time to failure requirement, an impact on
protection, and/or higher exposure to radiation. High-energy physics power
systems suffer from a combination of these effects: a high mean time to failure
is required, failure can impact on protection, and the proximity of systems to
accelerators increases the likelihood of radiation-induced events. This paper
presents the principal radiation-induced effects, and radiation environments
typical to high-energy physics. It outlines a procedure for designing and
validating radiation-tolerant systems using commercial off-the-shelf
components. The paper ends with a worked example of radiation-tolerant power
converter controls that are being developed for the Large Hadron Collider and
High Luminosity-Large Hadron Collider at CERN.Comment: 19 pages, contribution to the 2014 CAS - CERN Accelerator School:
Power Converters, Baden, Switzerland, 7-14 May 201
Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results
New technologies for radiation-hardening analog to digital converters
Surveys of available Analog to Digital Converters (ADC) suitable for precision applications showed that none have the proper combination of accuracy and radiation hardness to meet space and/or strategic weapon requirements. A development program which will result in an ADC device which will serve a number of space and strategic applications. Emphasis was placed on approaches that could be integrated onto a single chip within three to five years
Review of the outcome of two workshops on electronics for LHC experiments
Two Workshops were organized since September 1995 by the CERN LHC Electronics Review Board, LERB. Radiation-hard processes, opto-electronics, trigger and event building systems, electronics for calorimeters, muon detectors and trackers, were discussed in detail. During the first Workshop a variety of designs were presented in the light of the major requirements set by the detector collaborations. The second Workshop held in Hungary last September confirmed that a number of technological choices had been made. Some of the more salient designs are presented
Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results
Design and testing of a radiation hardened 13-bit 80 MS/s pipeline ADC implemented in a 90nm standard CMOS process
Second International Workshop on Analog and Mixed Signal Integrated Circuits for Space Applications (AMICSA 2008), Sintra, Portugal, Setembro de 200
High fidelity, radiation tolerant analog-to-digital converters
Techniques for an analog-to-digital converter (ADC) using pipeline architecture includes a linearization technique for a spurious-free dynamic range (SFDR) over 80 deciBels. In some embodiments, sampling rates exceed a megahertz. According to a second approach, a switched-capacitor circuit is configured for correct operation in a high radiation environment. In one embodiment, the combination yields high fidelity ADC (>88 deciBel SFDR) while sampling at 5 megahertz sampling rates and consuming <60 milliWatts. Furthermore, even though it is manufactured in a commercial 0.25-.mu.m CMOS technology (1 .mu.m=12.sup.-6 meters), it maintains this performance in harsh radiation environments. Specifically, the stated performance is sustained through a highest tested 2 megarad(Si) total dose, and the ADC displays no latchup up to a highest tested linear energy transfer of 63 million electron Volts square centimeters per milligram at elevated temperature (131 degrees C.) and supply (2.7 Volts, versus 2.5 Volts nominal)
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