Low-Cost Soft Error Robust Hardened D-Latch for CMOS Technology Circuit

In this paper, a Soft Error Hardened D-latch with improved performance is proposed, also featuring Single Event Upset (SEU) and Single Event Transient (SET) immunity. This novel D-latch can tolerate particles as charge injection in different internal nodes, as well as the input and output nodes. The performance of the new circuit has been assessed through different key parameters, such as power consumption, delay, Power-Delay Product (PDP) at various frequencies, voltage, temperature, and process variations. A set of simulations has been set up to benchmark the new proposed D-latch in comparison to previous D-latches, such as the Static D-latch, TPDICE-based D-latch, LSEH-1 and DICE D-latches. A comparison between these simulations proves that the proposed D-latch not only has a better immunity, but also features lower power consumption, delay, PDP, and area footprint. Moreover, the impact of temperature and process variations, such as aspect ratio (W/L) and threshold voltage transistor variability, on the proposed D-latch with regard to previous D-latches is investigated. Specifically, the delay and PDP of the proposed D-latch improves by 60.3% and 3.67%, respectively, when compared to the reference Static D-latch. Furthermore, the standard deviation of the threshold voltage transistor variability impact on the delay improved by 3.2%, while its impact on the power consumption improves by 9.1%. Finally, it is shown that the standard deviation of the (W/L) transistor variability on the power consumption is improved by 56.2%

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Highly Reliable Quadruple-Node Upset-Tolerant D-Latch

This work was supported in part by the Spanish MCIN/AEI /10.13039/501100011033/ FEDER under Grant PID2020-117344RB-I00, and in part by the Regional Government under Grant P20_00265 and Grant P20_00633.As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation in harsh radiative environments. In this manuscript, a new high reliable D-latch which can tolerate quadruple-node upsets is presented. The design is based on a low-cost single event double-upset tolerant (LSEDUT) cell and a clock-gating triple-level soft-error interceptive module (CG-SIM). Due to its LSEDUT base, it can tolerate two upsets, but the combination of two LSEDUTs and the triple-level CG-SIM provides the proposed D-latch with remarkable quadruple-node upsets (QNU) tolerance. Applying LSEDUTs for designing a QNU-tolerant D-latch improves considerably its features; in particular, this approach enhances its reliability against process variations, such as threshold voltage and (W/L) transistor variability, compared to previous QNU-tolerant D-latches and double-node-upset tolerant latches. Furthermore, the proposed D-latch not only tolerates QNUs, but it also features a clear advantage in comparison with the previous clock gating-based quadruple-node-upset-tolerant (QNUTL-CG) D-latch: it can mask single event transients. Speci c gures of merit endorse the gains introduced by the new design: compared with the QNUTL-CG D-latch, the improvements of the maximum standard deviations of the gate delay, induced by threshold voltage and (W/L) transistors variability of the proposed D-latch, are 13.8% and 5.7%, respectively. Also, the proposed D-latch has 23% lesser maximum standard deviation in power consumption, resulting from threshold voltage variability, when compared to the QNUTL-CG D-latch.Spanish MCIN/AEI /10.13039/501100011033/ FEDER under Grant PID2020-117344RB-I00Regional Government under Grant P20_00265 and Grant P20_0063

Single Event Effect Hardening Designs in 65nm CMOS Bulk Technology

Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A single particle from a radiation environment strikes semiconductor materials resulting in voltage and current perturbation, where errors are induced. This phenomenon is termed a Single Event Effect (SEE). With the shrinking of transistor size, charge sharing between adjacent devices leads to less effectiveness of current radiation hardening methods. Improving fault-tolerance of storage cells and logic gates in advanced technologies becomes urgent and important. A new Single Event Upset (SEU) tolerant latch is proposed based on a previous hardened Quatro design. Soft error analysis tools are used and results show that the critical charge of the proposed design is approximately 2 times higher than that of the reference design with negligible penalty in area, delay, and power consumption. A test chip containing the proposed flip-flop chains was designed and exposed to alpha particles as well as heavy ions. Radiation experimental results indicate that the soft error rates of the proposed design are greatly reduced when Linear Energy Transfer (LET) is lower than 4, which makes it a suitable candidate for ground-level high reliability applications. To improve radiation tolerance of combinational circuits, two combinational logic gates are proposed. One is a layout-based hardening Cascode Voltage Switch Logic (CVSL) and the other is a fault-tolerant differential dynamic logic. Results from a SEE simulation tool indicate that the proposed CVSL has a higher critical charge, less cross section, and shorter Single Event Transient (SET) pulses when compared with reference designs. Simulation results also reveal that the proposed differential dynamic logic significantly reduces the SEU rate compared to traditional dynamic logic, and has a higher critical charge and shorter SET pulses than reference hardened design

STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS

Microelectronic devices and systems have been extensively utilized in a variety of radiation environments, ranging from the low-earth orbit to the ground level. A high-energy particle from such an environment may cause voltage/current transients, thereby inducing Single Event Effect (SEE) errors in an Integrated Circuit (IC). Ever since the first SEE error was reported in 1975, this community has made tremendous progress in investigating the mechanisms of SEE and exploring radiation tolerant techniques. However, as the IC technology advances, the existing hardening techniques have been rendered less effective because of the reduced spacing and charge sharing between devices. The Semiconductor Industry Association (SIA) roadmap has identified radiation-induced soft errors as the major threat to the reliable operation of electronic systems in the future. In digital systems, hardening techniques of their core components, such as latches, logic, and clock network, need to be addressed. Two single event tolerant latch designs taking advantage of feedback transistors are presented and evaluated in both single event resilience and overhead. These feedback transistors are turned OFF in the hold mode, thereby yielding a very large resistance. This, in turn, results in a larger feedback delay and higher single event tolerance. On the other hand, these extra transistors are turned ON when the cell is in the write mode. As a result, no significant write delay is introduced. Both designs demonstrate higher upset threshold and lower cross-section when compared to the reference cells. Dynamic logic circuits have intrinsic single event issues in each stage of the operations. The worst case occurs when the output is evaluated logic high, where the pull-up networks are turned OFF. In this case, the circuit fails to recover the output by pulling the output up to the supply rail. A capacitor added to the feedback path increases the node capacitance of the output and the feedback delay, thereby increasing the single event critical charge. Another differential structure that has two differential inputs and outputs eliminates single event upset issues at the expense of an increased number of transistors. Clock networks in advanced technology nodes may cause significant errors in an IC as the devices are more sensitive to single event strikes. Clock mesh is a widely used clocking scheme in a digital system. It was fabricated in a 28nm technology and evaluated through the use of heavy ions and laser irradiation experiments. Superior resistance to radiation strikes was demonstrated during these tests. In addition to mitigating single event issues by using hardened designs, built-in current sensors can be used to detect single event induced currents in the n-well and, if implemented, subsequently execute fault correction actions. These sensors were simulated and fabricated in a 28nm CMOS process. Simulation, as well as, experimental results, substantiates the validity of this sensor design. This manifests itself as an alternative to existing hardening techniques. In conclusion, this work investigates single event effects in digital systems, especially those in deep-submicron or advanced technology nodes. New hardened latch, dynamic logic, clock, and current sensor designs have been presented and evaluated. Through the use of these designs, the single event tolerance of a digital system can be achieved at the expense of varying overhead in terms of area, power, and delay

耐ソフトエラーラッチにおける欠陥の分析、検出及び評価に関する研究

The development of modern integrated circuits (ICs) has greatly changed the life of humankind. Nowadays, IC s are also indispensable to mission-critical applications, such as medical devices, autonomous cars, aircraft navigating systems, and satellites. The reliability of these mission-critical applications is a major concern. A soft-error occurring in an IC is a severe threat to its reliability, especially for mission-critical applications. The continuous trend of shrinking technology feature sizes makes modern ICs more and more vulnerable to soft errors. Soft-errors are caused by radiation particles striking an IC and generating current pulses to disturb its functionality. A soft-error can cause data corruption and may eventually lead to system failure s If a soft-error occurs in an operational medical device during surgery, it may cause a malfunction of this device and interrupt the surgery process. A soft-error may change the control data of an autonomous car which may lead to an accident. A soft-error may corrupt the aircraft navigating systems. No one would take the chance to let it happen even though malfunction s caused by soft errors can be solved by resetting these devices. Because reset takes time and severe results may happen during the resetting. If a soft-error causes a malfunction in the control system of a satellite, it may not be able to maintain its height and eventually burn up as it falls into the Earth’s atmosphere. Hence, it is important to protect ICs from soft errors. Many soft-error tolerance methods have been proposed to protect ICs against soft-errors. In an IC, memory elements and storage elements (e.g., latches and flip flops) are the most vulnerable to soft-errors, and data stored in them are crucial to the operation of a circuit. Error correction codes (ECCs) can be u sed to protect memories. Register-level soft-error tolerance methods can be used to detect soft-errors in latches by using parity checking and correct them by resetting. Hardened designs protect latches against soft-errors by using redundant feedback loops to store the same input data and using a voter to select the correct output. The advantage of using hardened designs is that they can prevent soft-errors from reaching outputs while ECCs and register-level soft-error tolerance methods must detect soft-errors and then correct them by restoring the data. For protecting storage elements in mission-critical applications, hardened latch design is the best option because it has high reliability and can save the resetting time. Many state-of-the-art hardened latch designs have been proposed to tolerate soft errors and they are believed to have good soft-error tolerability. Defects (physical flaws due to imperfect production (production defects) and physical changes caused by aging effects after a long operation time (aging-related defects) can also cause a malfunction of a circuit and cause a system failure eventually. Different from the temporal state change of a circuit caused by soft errors, defects are permanent damages to a circuit and can disturb the behavior of a circuit from its desired manner. Defects in storage elements should be detected to make sure a system/device operating correctly and stably. Scan test is a commonly used defect detection method, which connects reconfigured storage elements to form a shift register with external access and the internal states of these storage elements can be easily controlled and checked. However, the impact of defects on existing state of the art hardened latch design has not been considered. This impact requires consideration because added redundancy in hardened latch designs can not only mask soft-errors but also mask the effects of defects and it can lead to two serious problems: Problem-1 (Low Testability): Production defects in hardened latch designs are difficult to detect with conventional scan tests, in which the observability (an important metric to evaluate a circuit’s testability) of defects in hardened latch designs can be greatly reduced. Therefore, existing state-of-the-art hardened latches have low observability and thus low testability. Furthermore, defects that escaped the production test (undetected defects) may become more and more serious and cause a system failure eventually. Problem-2 (Low Soft-Error Tolerability): Undetected defects and aging-related defects can make hardened latch designs vulnerable to soft-errors while defect-free ones do not. The soft-error tolerability of hardened latch designs may be compromise d by undetected defects or aging related defects. This research is the first to consider Problem-1 of low testability of hardened latches and Problem-2 of defects reducing the reliability of hardened latches. Furthermore, this research is the first to pro pose a comprehensive solution to solve these two problems with the following five major contributions: Contribution-1: A first of its kind metric for quantifying the impact of defects on hardened latches, called Post-Test Vulnerability Factor (PTVF). It is used to analyze the residual soft-error tolerability of hardened latches after testing. Problem-2 is solved by this first major contribution. Contribution-2: A novel design called Scan-Test-Aware Hardened Latch (STAHL) that provides the highest defect coverage in comparison with all existing hardened latches. Problem-1 is solved by using STAHL to build a scan c ell to perform a scan test. Contribution-3: A novel scan test procedure is proposed to solve Problem-1 by fully testing the STAHL based scan cell. Contribution-4: A novel High-Performance Scan-Test-Aware Hardened Latch (HP-STAHL) design can also solve Problem-1 and has similar defect coverage as STAHL but has lower power consumption and higher propagation speed. Contribution-5: A novel scan test procedure is proposed to fully test the HP STAHL-based scan cell to solve Problem-1. Comprehensive simulation results demonstrate the accuracy of the PTVF metric and the effectiveness of the STAHL-based scan test and HP-STAHL-based scan test. As the first comprehensive study bridging the gap between hardened latch design s and IC testing, the findings of this research are expected to significantly improve the soft-error-related reliability of IC designs for mission-critical applications. Furthermore, the two proposed hardened latches and the scan test procedures can not only be use d to detect defects after production but also can be applied to detect aging related defects in the field through performing built-in self-test (BIST). In Chapter 1, an example is introduced to indicate Problem-1 and Problem-2. Chapter 2 shows the background information of soft-errors and defects. Chapter 3 shows some typical soft-error mitigation methods and details of a scan test. Chapter 4 describes the detailed information of PTVF Contribution-1). Chapter 5 shows the structure of STAHL (Contribution-2) and Chapter 6 shows the scan test procedure of testing the STAHL-based scan cell (Contribution-3). Chapter 7 shows the structure of HP-STAHL (Contribution-4) and Chapter 8 shows the scan test procedure of testing the HP-STAHL based scan cell (Contribution-5). Chapter 9 shows the experimental results of comparing STAHL and HP-STAHL with state-of-the-art hardened latch designs. Chapter 10 concludes this thesis.九州工業大学博士学位論文 学位記番号：情工博甲第371号 学位授与年月日：令和4年9月26日1. Introduction|2. Background|3. Related Works|4. Post-Test Vulnerability Factor (PTVF)|5. Scan-Test Aware Hardened Latch (STAHL)|6. Scan Test Based on STAHL|7. High Performance Scan-Test-Aware Hardened Latch (HP STAHL)|8. Scan Test Based on HP STAHL|9. Experimental Evaluation|10. Conclusions and Future Works九州工業大学令和4年

Circuit designs for low-power and SEU-hardened systems

The desire to have smaller and faster portable devices is one of the primary motivations for technology scaling. Though advancements in device physics are moving at a very good pace, they might not be aggressive enough for now-a-day technology scaling trends. As a result, the MOS devices used for present day integrated circuits are pushed to the limit in terms of performance, power consumption and robustness, which are the most critical criteria for almost all applications. Secondly, technology advancements have led to design of complex chips with increasing chip densities and higher operating speeds. The design of such high performance complex chips (microprocessors, digital signal processors, etc) has massively increased the power dissipation and, as a result, the operating temperatures of these integrated circuits. In addition, due to the aggressive technology scaling the heat withstanding capabilities of the circuits is reducing, thereby increasing the cost of packaging and heat sink units. This led to the increase in prominence for smarter and more robust low-power circuit and system designs. Apart from power consumption, another criterion affected by technology scaling is robustness of the design, particularly for critical applications (security, medical, finance, etc). Thus, the need for error free or error immune designs. Until recently, radiation effects were a major concern in space applications only. With technology scaling reaching nanometer level, terrestrial radiation has become a growing concern. As a result Single Event Upsets (SEUs) have become a major challenge to robust designs. Single event upset is a temporary change in the state of a device due to a particle strike (usually from the radiation belts or from cosmic rays) which may manifest as an error at the output. This thesis proposes a novel method for adaptive digital designs to efficiently work with the lowest possible power consumption. This new technique improves options in performance, robustness and power. The thesis also proposes a new dual data rate flipflop, which reduces the necessary clock speed by half, drastically reducing the power consumption. This new dual data rate flip-flop design culminates in a proposed unique radiation hardened dual data rate flip-flop, Firebird\u27. Firebird offers a valuable addition to the future circuit designs, especially with the increasing importance of the Single Event Upsets (SEUs) and power dissipation with technology scaling.\u2

Soft-Error Resilience Framework For Reliable and Energy-Efficient CMOS Logic and Spintronic Memory Architectures

The revolution in chip manufacturing processes spanning five decades has proliferated high performance and energy-efficient nano-electronic devices across all aspects of daily life. In recent years, CMOS technology scaling has realized billions of transistors within large-scale VLSI chips to elevate performance. However, these advancements have also continually augmented the impact of Single-Event Transient (SET) and Single-Event Upset (SEU) occurrences which precipitate a range of Soft-Error (SE) dependability issues. Consequently, soft-error mitigation techniques have become essential to improve systems\u27 reliability. Herein, first, we proposed optimized soft-error resilience designs to improve robustness of sub-micron computing systems. The proposed approaches were developed to deliver energy-efficiency and tolerate double/multiple errors simultaneously while incurring acceptable speed performance degradation compared to the prior work. Secondly, the impact of Process Variation (PV) at the Near-Threshold Voltage (NTV) region on redundancy-based SE-mitigation approaches for High-Performance Computing (HPC) systems was investigated to highlight the approach that can realize favorable attributes, such as reduced critical datapath delay variation and low speed degradation. Finally, recently, spin-based devices have been widely used to design Non-Volatile (NV) elements such as NV latches and flip-flops, which can be leveraged in normally-off computing architectures for Internet-of-Things (IoT) and energy-harvesting-powered applications. Thus, in the last portion of this dissertation, we design and evaluate for soft-error resilience NV-latching circuits that can achieve intriguing features, such as low energy consumption, high computing performance, and superior soft errors tolerance, i.e., concurrently able to tolerate Multiple Node Upset (MNU), to potentially become a mainstream solution for the aerospace and avionic nanoelectronics. Together, these objectives cooperate to increase energy-efficiency and soft errors mitigation resiliency of larger-scale emerging NV latching circuits within iso-energy constraints. In summary, addressing these reliability concerns is paramount to successful deployment of future reliable and energy-efficient CMOS logic and spintronic memory architectures with deeply-scaled devices operating at low-voltages

Study of Radiation-Tolerant SRAM Design

Static Random Access Memories (SRAMs) are important storage components and widely used in digital systems. Meanwhile, with the continuous development and progress of aerospace technologies, SRAMs are increasingly used in electronic systems for spacecraft and satellites. Energetic particles in space environments can cause single event upsets normally referred as soft errors in the memories, which can lead to the failure of systems. Nowadays electronics at the ground level also experience this kind of upset mainly due to cosmic neutrons and alpha particles from packaging materials, and the failure rate can be 10 to 100 times higher than the errors from hardware failures. Therefore, it is important to study the single event effects in SRAMs and develop cost-effective techniques to mitigate these errors. The objectives of this thesis are to evaluate the current mitigation techniques of single event effects in SRAMs and develop a radiation-tolerant SRAM based on the developed techniques. Various radiation sources and the mechanism of their respective effects in Complementary Metal-Oxide Semiconductors(CMOS) devices are reviewed first in the thesis. The radiation effects in the SRAMs, specifically single event effects are studied, and various mitigation techniques are evaluated. Error-correcting codes (ECC) are studied in the thesis since they can detect and correct single bit errors in the cell array, and it is a effective method with low overhead in terms of area, speed, and power. Hamming codes are selected and implemented in the design of the SRAM, to protect the cells from single event upsets in the SRAM. The simulation results show they can prevent the single bit errors in the cell arrays with low area and speed overhead. Another important and vulnerable part of SRAMs in radiation environments is the sense amplifier. It may not generate the correct output during the reading operation if it is hit by an energetic particle. A novel fault-tolerant sense amplifier is introduced and validated with simulations. The results showed that the performance of the new design can be more than ten times better than that of the reference design. When combining the SRAM cell arrays protected with ECC and the radiation-tolerant hardened sense amplifiers, the SRAM can achieve high reliability with low speed and area overhead