53,153 research outputs found
4-Dimensional Tracking with Ultra-Fast Silicon Detectors
The evolution of particle detectors has always pushed the technological limit
in order to provide enabling technologies to researchers in all fields of
science. One archetypal example is the evolution of silicon detectors, from a
system with a few channels 30 years ago, to the tens of millions of independent
pixels currently used to track charged particles in all major particle physics
experiments. Nowadays, silicon detectors are ubiquitous not only in research
laboratories but in almost every high-tech apparatus, from portable phones to
hospitals. In this contribution, we present a new direction in the evolution of
silicon detectors for charge particle tracking, namely the inclusion of very
accurate timing information. This enhancement of the present silicon detector
paradigm is enabled by the inclusion of controlled low gain in the detector
response, therefore increasing the detector output signal sufficiently to make
timing measurement possible. After providing a short overview of the advantage
of this new technology, we present the necessary conditions that need to be met
for both sensor and readout electronics in order to achieve 4-dimensional
tracking. In the last section we present the experimental results,
demonstrating the validity of our research path.Comment: 72 pages, 3 tables, 55 figure
Comparison of 35 and 50 {\mu}m thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon
Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison
of these new results to data reported before on 50 {\mu}m thick UFSD produced
by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences
of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested
pre-irradiation and post-irradiation with minimum ionizing particles (MIPs)
from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and
the timing resolution were measured as a function of bias voltage at -20C and
-27C. The timing resolution was extracted from the time difference with a
second calibrated UFSD in coincidence, using the constant fraction method for
both. Within the fluence range measured, the advantage of the 35 {\mu}m thick
UFSD in timing accuracy, bias voltage and power can be established.Comment: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap
with arXiv:1707.0496
A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology
With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and other ionizing radiation. In bandgap voltage references, the dominant radiation-susceptibility is then no longer associated with the MOS transistors, but is dominated by the diodes. This paper gives an analysis of radiation effects in both MOSdevices and diodes and presents a solution to realize a radiation-hard voltage reference circuit in a standard CMOS technology. A demonstrator circuit was implemented in a standard 0.13 m CMOS technology. Measurements show correct operation with supply voltages in the range from 1.4 V down to 0.85 V, a reference voltage of 405 mV 7.5 mV ( = 6mVchip-to-chip statistical spread), and a reference voltage shift of only 1.5 mV (around 0.8%) under irradiation up to 44 Mrad (Si)
Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes
We present ultra-thin silicon membrane thermocouple bolometers suitable for
fast and sensitive detection of low levels of thermal power and infrared
radiation at room temperature. The devices are based on 40 nm-thick strain
tuned single crystalline silicon membranes shaped into heater/absorber area and
narrow n- and p-doped beams, which operate as the thermocouple. The
electro-thermal characterization of the devices reveal noise equivalent power
of 13 pW/rtHz and thermal time constant of 2.5 ms. The high sensitivity of the
devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of
thermal conductivity of the Si beams from the bulk value. The bolometers
operate in the Johnson-Nyquist noise limit of the thermocouple, and the
performance improvement towards the operation close to the temperature
fluctuation limit is discussed.Comment: 11 pages, 3 figure
Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells
The implementation of a wide range of novel concepts for next-generation
high-efficiency solar cells is based on nanostructures with
configuration-tunable optoelectronic properties. On the other hand, effective
nano-optical light-trapping concepts enable the use of ultra-thin absorber
architectures. In both cases, the local density of electronic and optical
states deviates strongly from that in a homogeneous bulk material. At the same
time, non-local and coherent phenomena like tunneling or ballistic transport
become increasingly relevant. As a consequence, the semi-classical, diffusive
bulk picture conventionally assumed may no longer be appropriate to describe
the physical processes of generation, transport, and recombination governing
the photovoltaic operation of such devices. In this review, we provide a
quantum-kinetic perspective on photovoltaic device operation that reaches
beyond the limits of the standard simulation models for bulk solar cells.
Deviations from bulk physics are assessed in ultra-thin film and
nanostructure-based solar cell architectures by comparing the predictions of
the semi-classical models for key physical quantities such as absorption
coefficients, emission spectra, generation and recombination rates as well as
potentials, densities and currents with the corresponding properties as given
by a more fundamental description based on non-equilibrium quantum statistical
mechanics. This advanced approach, while paving the way to a comprehensive
quantum theory of photovoltaics, bridges simulations at microscopic material
and macroscopic device levels by providing the charge carrier dynamics at the
mesoscale.Comment: 22 pages, 8 figures; review article based on an invited talk at the
MRS Spring Meeting 2017 in Phoeni
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