Learning Behavior of Memristor-Based Neuromorphic Circuits in the Presence of Radiation

In this paper, a feed-forward spiking neural network with memristive synapses is designed to learn a spatio-temporal pattern representing the 25-pixel character ‘B’ by separating correlated and uncorrelated afferents. The network uses spike-timing-dependent plasticity (STDP) learning behavior, which is implemented using biphasic neuron spikes. A TiO2 memristor non-linear drift model is used to simulate synaptic behavior in the neuromorphic circuit. The network uses a many-to-one topology with 25 pre-synaptic neurons (afferent) each connected to a memristive synapse and one post-synaptic neuron. The memristor model is modified to include the experimentally observed effect of state-altering radiation. During the learning process, irradiation of the memristors alters their conductance state, and the effect on circuit learning behavior is determined. Radiation is observed to generally increase the synaptic weight of the memristive devices, making the network connections more conductive and less stable. However, the network appears to relearn the pattern when radiation ceases but does take longer to resolve the correlation and pattern. Network recovery time is proportional to flux, intensity, and duration of the radiation. Further, at lower but continuous radiation exposure, (flux 1x1010 cm−2 s−1 and below), the circuit resolves the pattern successfully for up to 100 s

The Effects of Radiation on Memristor-Based Electronic Spiking Neural Networks

In this dissertation, memristor-based spiking neural networks (SNNs) are used to analyze the effect of radiation on the spatio-temporal pattern recognition (STPR) capability of the networks. Two-terminal resistive memory devices (memristors) are used as synapses to manipulate conductivity paths in the network. Spike-timing-dependent plasticity (STDP) learning behavior results in pattern learning and is achieved using biphasic shaped pre- and post-synaptic spikes. A TiO2 based non-linear drift memristor model designed in Verilog-A implements synaptic behavior and is modified to include experimentally observed effects of state-altering, ionizing, and off-state degradation radiation on the device. The impact of neuron “death” (disabled neuron circuits) due to radiation is also examined. In general, radiation interaction events distort the STDP learning curve undesirably, favoring synaptic potentiation. At lower short-term flux, the network is able to recover and relearn the pattern with consistent training, although some pixels may be affected due to stability issues. As the radiation flux and duration increases, it can overwhelm the leaky integrate-and-fire (LIF) post-synaptic neuron circuit, and the network does not learn the pattern. On the other hand, in the absence of the pattern, the radiation effects cumulate, and the system never regains stability. Neuron-death simulation results emphasize the importance of non-participating neurons during the learning process, concluding that non-participating afferents contribute to improving the learning ability of the neural network. Instantaneous neuron death proves to be more detrimental for the network compared to when the afferents die over time thus, retaining the network’s pattern learning capability

Memristors

This Edited Volume Memristors - Circuits and Applications of Memristor Devices is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of Engineering. The book comprises single chapters authored by various researchers and edited by an expert active in the physical sciences, engineering, and technology research areas. All chapters are complete in itself but united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors on physical sciences, engineering, and technology,and open new possible research paths for further novel developments