1,430 research outputs found

    A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

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    © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

    Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

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    A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mum ) dielectric layer that enables very low loss lines (~0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time

    A Discrete-Time Mixing Receiver Architecture with Wideband Image and Harmonic Rejection for Software-Defined Radio

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    A discrete-time mixing architecture for software defined radio receivers is proposed. It exploits 8x RF voltage oversampling followed by charge domain weighting to achieve 40dB 3rd and 5th harmonic rejection without channel bandwidth limitations. Also noise folding is reduced by 3dB. A zero-IF downconverter chip in 65nm CMOS can receive RF signals up to 900MHz, with NFmin=12dB, IIP3=11dBm at <20mW power consumption including multi-phase clock\ud generation

    Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

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    The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

    Reconfigurable RF Front End Components for Multi-Radio Platform Applications

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    The multi-service requirements of the 3G and 4G communication systems, and their backward compatibility requirements, create challenges for the antenna and RF front-end designs with multi-band and wide-band techniques. These challenges include: multiple filters, which are lossy, bulky, and expensive, are needed in the system; device board size limitation and the associated isolation problems caused by the limited space and crowd circuits; and the insertion loss issues created by the single-pole-multi-through antenna switch. As will be shown, reconfigurable antennas can perform portions of the filter functions, which can help solve the multiple filters problem. Additionally, reconfigurable RF circuits can decrease the circuit size and output ports, which can help solve board size limitation, and isolation and antenna switch insertion loss issues. To validate the idea that reconfigurable antennas and reconfigurable RF circuits are a viable option for multi-service communication system, a reconfigurable patch antenna, a reconfigurable monopole antenna, and a reconfigurable power amplifier (PA) have been developed. All designs adapt state-of-the-art techniques. For the reconfigurable antenna designs, an experiment demonstrating its advantages, such as jamming signal resistance, has been performed. Reconfigurable antennas provide a better out-ofoperating- band noise performance than the multi-band antennas design, decreasing the need for filters in the system. A full investigation of reconfigurable antennas, including the single service reconfigurable antenna, the mixed signal service reconfigurable antenna, and the multi-band reconfigurable antenna, has been completed. The design challenges, which include switches investigation, switches integration, and service grouping techniques, have been discussed. In the reconfigurable PA portion, a reconfigurable PA structure has first been demonstrated, and includes a reconfigurable output matching network (MN) and a reconfigurable die design. To validate the proposed reconfigurable PA structure, a reconfigurable PA for a 3G cell phone system has been designed with a multi-chip module technique. The reconfigurable PA structure can significantly decrease the real-estate, cost, and complexity of the PA design. Further, by decreasing the number of output ports, the number of poles for the antenna switch will be decreased as well, leading to an insertion loss decrease

    RECONFIGURABLE POWER AMPLIFIER WITH TUNABLE INTERSTAGE MATCHING NETWORK USING GaAs MMIC AND SURFACE-MOUNT TECHNOLOGY

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    As the demand of reconfigurable devices increases, the possibility of exploiting the interstage matching network in a two-stage amplifier to provide center frequency tuning capability is explored. While placement of tuning elements at the input and/or output matching network has some disadvantages, placement of tuning elements in the interstage absorbs the lossy components characteristics into useful attributes. The circuit design methodology includes graphical method to determine the bandpass topology that achieves high Q-contour on the Smith chart thus result in narrow bandwidth. T-section and π-section topologies are used to match reactive terminations provided by the first and second amplifier stages. The design methodology also includes utilization of interstage mismatch loss that decreases as increasing frequency to compensate for amplifier gain roll-off and equalize the gain at different tuning states. In prototype realization, three design configurations are discussed in this thesis: 1) a discrete design for operation between 0.1 – 0.9 GHz with the total layout area of 7.5 mm x 12.5 mm, 2) a partial monolithic design (Quasi-MMIC) for operation between 0.9 – 2.4 GHz that is 25 times smaller layout area compared to the discrete design, and 3) a conceptual design of integrated monolithic reconfigurable PA for operation between 0.9 – 2.4 GHz that is 130 times smaller layout area compared to the discrete design. One variant of the fabricated reconfigurable PA offers advantage of 4-states center frequency tuning from 1.37 GHz to 1.95 GHz with gain of 21.5 dB (+ 0.7 dB). The feasibility of interstage matching network as tuning elements in reconfigurable power amplifier has been explored. The input and output matching networks are fixed while the interstage impedances are varied using electronic switching (discrete SP4T and GaAs FET switches). The discrete design is suited for the operation at low frequency (fo < 1GHz), while monolithic implementation of the tunable interstage matching network is required for higher frequency operation due to size limitation and parasitic effects. The reconfigurable PA using MMIC tuner was designed at higher frequency to possibly cover GSM, CDMA, Bluetooth, and WiMAX frequency (0.9 – 2.4 GHz)

    Design of a class-F power amplifier with reconfigurable output harmonic termination in 0.13 ”m CMOS

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    Next generation wireless communication technology requires mobile devices and base stations to support multiband multimode frequencies with higher data rate because of the type of enriched and enhanced features and services that are provided to the end user. The challenge for next generation PA designers is to provide high efficiency, output power and good linearity across multiple frequency bands, modulation standards and bandwidth. Current industry solution involves parallel PAs dedicated to a single band of operation. As more and more features are added, more and more PAs will be required with increasing cost, area and complexity. As a solution to this problem, one tunable fully integrated class-F power amplifier with reconfigurable output harmonic termination is proposed, designed, fabricated and tested with a commercially available 0.13”m CMOS process technology. By using the coupling between the primary and the secondary winding of an on chip transformer with a variable secondary termination capacitance, the second and third harmonic short and open circuit frequencies are dynamically tuned from 700 MHz to 1200 MHz and achieve high efficiency and output power. To overcome CMOS process low break down voltage, a series voltage combining approach is used for the power device to boost output power, by allowing the power supply to exceed process limits. The fabricated die was packaged and mounted to a printed circuit board for evaluation. Compared to previously publish fully integrated PAs, our design exhibits superior peak power added efficiency, 48.4%, and decent saturated output power and power gain of 24.6 dBm and 16.5 dB respectively with reconfigurability from 700 MHz to 1200 MHz

    Reconfigurable Reflectarrays and Array Lenses for Dynamic Antenna Beam Control: A Review

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    Advances in reflectarrays and array lenses with electronic beam-forming capabilities are enabling a host of new possibilities for these high-performance, low-cost antenna architectures. This paper reviews enabling technologies and topologies of reconfigurable reflectarray and array lens designs, and surveys a range of experimental implementations and achievements that have been made in this area in recent years. The paper describes the fundamental design approaches employed in realizing reconfigurable designs, and explores advanced capabilities of these nascent architectures, such as multi-band operation, polarization manipulation, frequency agility, and amplification. Finally, the paper concludes by discussing future challenges and possibilities for these antennas.Comment: 16 pages, 12 figure

    Microwave class-E power amplifiers: a brief review of essential concepts in high-frequency class-E PAs and related circuits

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    Since Nathan Sokal's invention of the class-E power amplifier (PA), the vast majority of class-E results have been reported at kilohertz and millihertz frequencies, but the concept is increasingly applied in the ultrahigh-frequency (UHF) [1]-[13], microwave [14]-[20], and even millimeter-wave range [21]. The goal of this article is to briefly review some interesting concepts concerning high-frequency class-E PAs and related circuits. (The article on page 26 of this issue, "A History of Switching-Mode Class-E Techniques" by Andrei Grebennikov and Frederick H. Raab, provides a historical overview of class-E amplifier development.)We acknowledge support, in part, by a Lockheed Martin Endowed Chair at the University of Colorado and in part by the Spanish Ministry of Economy, Industry, and Competitiveness (MINECO) through TEC2014-58341-C4-1-R and TEC2017-83343-C4-1-R projects, cofunded with FEDER
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