Multifunction MMIC For Miniaturized Solid State Switch Matrix

This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment.This MMIC has been developed using a standard PHEMT process and includes two switches,a totally switchable-off amplifier and a temperature compensation circuit.The complete circuit has also been designed to interface a standard CMOS control level. Performed simulations and obtained results demonstrate the effectiveness of this approach in reaching compactness and reliability of satellite equipment

50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 ΜW/Μ demonstrating f<sub>T</sub> of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 ΜW) radio transceivers for autonomous distributed sensor network applications

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mum ) dielectric layer that enables very low loss lines (~0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time

Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates

A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier

This paper demonstrated the first 2-stage, 2.8W, 1.8V, 1.9GHz fully-integrated DAT power amplifier with 50Ω input and output matching using 0.18μm CMOS transistors. It has a small-signal gain of 27dB. The amplifier provides 2.8W of power into a 50Ω load with a PAE of 50%

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%

A 14-mW PLL-less receiver in 0.18-μm CMOS for Chinese electronic toll collection standard

This is the accepted manuscript version of the following article: Xiaofeng He, et al., “A 14-mW PLL-less receiver in 0.18-μm CMOS for Chinese electronic toll collection standard”, IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 61(10): 763-767, August 2014. The final published version is available at: http://ieeexplore.ieee.org/document/6871304/ © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.The design of a 14-mW receiver without phase-locked loop for the Chinese electronic toll collection (ETC) system in a standard 0.18-μm CMOS process is presented in this brief. Since the previously published work was mainly based on vehicle-powered systems, low power consumption was not the primary goal of such a system. In contrast, the presented system is designed for a battery-powered system. Utilizing the presented receiver architecture, the entire receiver only consumes 7.8 mA, at the supply voltage of 1.8 V, which indicates a power saving of at least 38% compared with other state-of-the-art designs for the same application. To verify the performance, the bit error rate is measured to be better than 10-6, which well satisfies the Chinese ETC standard. Moreover, the sensitivity of the designed receiver can be readjusted to -50 dBm, which is required by the standard.Peer reviewe

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design