24,120 research outputs found

    Photo-FETs: phototransistors enabled by 2D and 0D nanomaterials

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    The large diversity of applications in our daily lives that rely on photodetection technology requires photodetectors with distinct properties. The choice of an adequate photodetecting system depends on its application, where aspects such as spectral selectivity, speed, and sensitivity play a critical role. High-sensitivity photodetection covering a large spectral range from the UV to IR is dominated by photodiodes. To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new device architectures and material systems are needed with low-cost fabrication and high performance. Low-dimensional nanomaterials (0D, 1D, 2D) are promising candidates with many unique electrical and optical properties and additional functionalities such as flexibility and transparency. In this Perspective, the physical mechanism of photo-FETs (field-effect transistors) is described and recent advances in the field of low-dimensional photo-FETs and hybrids thereof are discussed. Several requirements for the channel material are addressed in view of the photon absorption and carrier transport process, and a fundamental trade-off between them is pointed out for single-material-based devices. We further clarify how hybrid devices, consisting of an ultrathin channel sensitized with strongly absorbing semiconductors, can circumvent these limitations and lead to a new generation of highly sensitive photodetectors. Recent advances in the development of sensitized low-dimensional photo-FETs are discussed, and several promising future directions for their application in high-sensitivity photodetection are proposed.Peer ReviewedPostprint (author's final draft

    Three-dimensional disordered conductors in a strong magnetic field: surface states and quantum Hall plateaus

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    We study localization in layered, three-dimensional conductors in strong magnetic fields. We demonstrate the existence of three phases - insulator, metal and quantized Hall conductor - in the two-dimensional parameter space obtained by varying the Fermi energy and the interlayer coupling strength. Transport in the quantized Hall conductor occurs via extended surface states. These surface states constitute a subsystem at a novel critical point, which we describe using a new, directed network model.Comment: 4 pages (PostScript) replaced due to compression error, slightly shortened version to appear in PR
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