QuNetSim: A Software Framework for Quantum Networks

As quantum internet technologies develop, the need for simulation software and education for quantum internet rises. QuNetSim aims to fill this need. QuNetSim is a Python software framework that can be used to simulate quantum networks up to the network layer. The goal of QuNetSim is to make it easier to investigate and test quantum networking protocols over various quantum network configurations and parameters. The framework incorporates many known quantum network protocols so that users can quickly build simulations and beginners can easily learn to implement their own quantum networking protocols.Comment: 11 pages, 6 figure

Open-source development experiences in scientific software: the HANDE quantum Monte Carlo project

The HANDE quantum Monte Carlo project offers accessible stochastic algorithms for general use for scientists in the field of quantum chemistry. HANDE is an ambitious and general high-performance code developed by a geographically-dispersed team with a variety of backgrounds in computational science. In the course of preparing a public, open-source release, we have taken this opportunity to step back and look at what we have done and what we hope to do in the future. We pay particular attention to development processes, the approach taken to train students joining the project, and how a flat hierarchical structure aids communicationComment: 6 pages. Submission to WSSSPE

A conditional quantum phase gate between two 3-state atoms

We propose a scheme for conditional quantum logic between two 3-state atoms that share a quantum data-bus such as a single mode optical field in cavity QED systems, or a collective vibrational state of trapped ions. Making use of quantum interference, our scheme achieves successful conditional phase evolution without any real transitions of atomic internal states or populating the quantum data-bus. In addition, it only requires common addressing of the two atoms by external laser fields.Comment: 8 fig

Improvement of control and analysis techniques of a SPM model

Bakalářská práce se zabývá zdokonalováním výukového modelu mikroskopu atomárních sil (AFM). Součástí práce je rešerše stávajících analogii mezi makroskopickými jevy a fenomény spojenými s mikroskopii rastrovací sondou. Dále byla vybrána vhodná analogie, která byla následně implementována do již existujícího modelu mikroskopu atomárních sil. Do modelu byl integrován i jednodeskový počítač, který zajistí ovládání i bez nutnosti připojení externího počítače. Na závěr byly vyhodnoceny vlastnosti použité sondy a analogie mezi modelem a skutečnými mikroskopy atomárních sil.This Bachelor Thesis is focused on development of a model of an atomic force microscope (AFM). First part of the thesis is research of already existing analogies between macroscopic phenomena and phenomena connected to scanning probe microscopy. A suitable analogy was chosen and implemented into an existing AFM model. A single-board computer was integrated into the model to enable control without connecting an external computer. In final chapters, probe behaviour and analogies between the model and real atomic force microscopes are discussed.

Effect of Electrolyte Concentration on the Capacitance and Mobility of Graphene

The use of graphene field-effect transistors as a biosensor is increasingly being used to study biological phenomena, due to the sensitivity and low reactivity of graphene. To further improve sensitivity in biological environments, we examined how different salt concentrations affect the mobility of capacitance of the graphene. Samples were also measured after an annealing process. We report on the positive correlation between sensitivity and electrolyte concentration and speculate on methods to improve future detectors. Mobility of the device was found to change from 1.07*103cm2/ (V*s) in de-ionized water to 2.78*103cm2/ (V*s) in a 500 mM potassium phosphate buffer solution

GaN/AlN Multiple Quantum Wells and Nitride-Based Waveguide Structures for Ultrafast All-Optical Switch Utilizing Intersubband Transition

Intersubband transition （ISBT） in multiple quantum wells （MQW） has drawn much attention for ultrafast optoelectronic devices owing to its wide wavelength-tunability and extremely fast energy relaxation process. Recently, the extension of ISBT wavelength to near-infrared wavelength, especially 1.55 μm, is of particular interest because such wavelength is vital for the development of ultrafast photonic devices for silica-fiber-based optical-communication networks. Among various materials proposed for intersubband transition at 1.55 μm, GaN/AlN MQW structures are promising due to their large conduction band offset of approximately 2 eV. Furthermore, the large electron effective mass and the large LO phonon energy in nitrides make their intersubband relaxation extremely fast in the order of sub-picoseconds. This makes intersubband transition in nitrides immensely interesting for the development of ultrafast photonic devices operating at a bit rate higher than 1 Tb/s.//The intersubband transition at 1.55 μm and shorter wavelengths have been achieved by molecular beam epitaxy （MBE） with the shortest wavelength of 1.08 μm. On the other hand, growth by metalorganic vapor phase epitaxy （MOVPE） has not yielded satisfactory results as the shortest ISBT wavelength reported is merely 2.4 μm. The demonstration of 1.55-μm ISBT by MOVPE, however, is still attractive since much better crystalline quality for device fabrication can be achieved. Moreover, MOVPE also has another advantage over MBE in industrial point of view. Indeed, the ultrafast optical switching utilizing intersubband transition has been demonstrated by MBE-grown GaN ridge waveguide structure with a bit rate higher than 1 Tb/s. However, such device requires optical-pulse switching energy higher than 10pJ/μm2 to utilize the saturable intersubband absorption, which is still too large for the applications in conventional optical communication networks. Reduction of the switching energy is therefore another important issue for the intersubband transition devices. In order to reduce the switching energy, not only the waveguide fabrication process, but also the epitaxial growth technique and the device structure have to be improved.//In this dissertation, the GaN/AlN multiple quantum wells and nitride-based waveguide structures are studied and fabricated for the applications of ultrafast all-optical switch utilizing intersubband transition. The ultrafast intersubband transition device is realized by using AlN waveguide structure with GaN/AlN quantum wells. This AlN-waveguide-based intersubband transition device can operate in the optical communication wavelength range, covering 1.3 μm, the shortest wavelength ever demonstrated for the intersubband transition devices.//In order to perform epitaxial growth of such structure with high quality, MOVPE is more preferable than MBE because the AlN layer can be grown with much better quality by the MOVPE. However, since the MOVPE growth of GaN/AlN MQW for the 1.55-μm ISBT is very difficult, the AlN waveguide structure was fabricated with a combination of both MOVPE and MBE growth techniques: MOVPE growth for AlN buffer layer and MBE re-growth for GaN/AlN multiple quantum wells. With this combination, the high quality waveguide with intersubband absorption in a wavelength range of 1.3-1.55 μm is achieved.//In addition to the improvement in the epitaxial growth technique, this dissertation also discusses on the problems in growing the waveguide structure of both MOVPE and MBE. Moreover, the design and fabrication of nitride-based waveguide structures are studied in details to improve the waveguide quality. The high-optical-confinement waveguide structures are proposed and successfully fabricated for the first time thanks to the successful demonstration of epitaxial growth and the improvement of fabrication process. Additionally, a new waveguide characterization method using the supercontinuum light source is also proposed and demonstrated. With this new characterization method, not only are the direct measurements of intersubband absorption in waveguides realized, but the problems in waveguide quality of the MBE-grown waveguide are also revealed. This provides very useful information for the improvement of fabrication process, especially the epitaxial growth process. The achievements in each area of epitaxial growth, waveguide fabrication process, and characterization, have made contributions to the improvement of waveguide characteristic, leading to the successful demonstration of the first AlN-waveguide-based intersubband transition devices with high performance.報告番号: 甲21171 ; 学位授与年月日: 2006-03-23 ; 学位の種別: 課程博士 ; 学位の種類: 博士(工学) ; 学位記番号: 博工第6261号 ; 研究科・専攻: 工学系研究科電子工学専