Digital PLL for ISM applications

In modern transceivers, a low power PLL is a key block. It is known that with the evolution of technology, lower power and high performance circuitry is a challenging demand. In this thesis, a low power PLL is developed in order not to exceed 2mW of total power consumption. It is composed by small area blocks which is one of the main demands. The blocks that compose the PLL are widely abridged and the final solution is shown, showing why it is employed. The VCO block is a Current-Starved Ring Oscillator with a frequency range from 400MHz to 1.5GHz, with a 300μW to approximately 660μW power consumption. The divider is composed by six TSPC D Flip-Flop in series, forming a divide-by-64 divider. The Phase-Detector is a Dual D Flip-Flop detector with a charge pump. The PLL has less than a 2us lock time and presents a output oscillation of 1GHz, as expected. It also has a total power consumption of 1.3mW, therefore fulfilling all the specifications. The main contributions of this thesis are that this PLL can be applied in ISM applications due to its covering frequency range and low cost 130nm CMOS technology

Clock Generation Design for Continuous-Time Sigma-Delta Analog-To-Digital Converter in Communication Systems

Software defined radio, a highly digitized wireless receiver, has drawn huge attention in modern communication system because it can not only benefit from the advanced technologies but also exploit large digital calibration of digital signal processing (DSP) to optimize the performance of receivers. Continuous-time (CT) bandpass sigma-delta (ΣΔ) modulator, used as an RF-to-digital converter, has been regarded as a potential solution for software defined ratio. The demand to support multiple standards motivates the development of a broadband CT bandpass ΣΔ which can cover the most commercial spectrum of 1GHz to 4GHz in a modern communication system. Clock generation, a major building block in radio frequency (RF) integrated circuits (ICs), usually uses a phase-locked loop (PLL) to provide the required clock frequency to modulate/demodulate the informative signals. This work explores the design of clock generation in RF ICs. First, a 2-16 GHz frequency synthesizer is proposed to provide the sampling clocks for a programmable continuous-time bandpass sigma-delta (ΣΔ) modulator in a software radio receiver system. In the frequency synthesizer, a single-sideband mixer combines feed-forward and regenerative mixing techniques to achieve the wide frequency range. Furthermore, to optimize the excess loop delay in the wideband system, a phase-tunable clock distribution network and a clock-controlled quantizer are proposed. Also, the false locking of regenerative mixing is solved by controlling the self-oscillation frequency of the CML divider. The proposed frequency synthesizer performs excellent jitter performance and efficient power consumption. Phase noise and quadrature phase accuracy are the common tradeoff in a quadrature voltage-controlled oscillator. A larger coupling ratio is preferred to obtain good phase accuracy but suffer phase noise performance. To address these fundamental trade-offs, a phasor-based analysis is used to explain bi-modal oscillation and compute the quadrature phase errors given by inevitable mismatches of components. Also, the ISF is used to estimate the noise contribution of each major noise source. A CSD QVCO is first proposed to eliminate the undesired bi-modal oscillation and enhance the quadrature phase accuracy. The second work presents a DCC QVCO. The sophisticated dynamic current-clipping coupling network reduces injecting noise into LC tank at most vulnerable timings (zero crossing points). Hence, it allows the use of strong coupling ratio to minimize the quadrature phase sensitivity to mismatches without degrading the phase noise performance. The proposed DCC QVCO is implemented in a 130-nm CMOS technology. The measured phase noise is -121 dBc/Hz at 1MHz offset from a 5GHz carrier. The QVCO consumes 4.2mW with a 1-V power supply, resulting in an outstanding Figure of Merit (FoM) of 189 dBc/Hz. Frequency divider is one of the most power hungry building blocks in a PLL-based frequency synthesizer. The complementary injection-locked frequency divider is proposed to be a low-power solution. With the complimentary injection schemes, the dividers can realize both even and odd division modulus, performing a more than 100% locking range to overcome the PVT variation. The proposed dividers feature excellent phase noise. They can be used for multiple-phase generation, programmable phase-switching frequency dividers, and phase-skewing circuits

Hybrid DDS-PLL based reconfigurable oscillators with high spectral purity for cognitive radio

Analytical, design and simulation studies on the performance optimization of reconfigurable architecture of a Hybrid DDS – PLL are presented in this thesis. The original contributions of this thesis are aimed towards the DDS, the dithering (spur suppression) scheme and the PLL. A new design of Taylor series-based DDS that reduces the dynamic power and number of multipliers is a significant contribution of this thesis. This thesis compares dynamic power and SFDR achieved in the design of varieties of DDS such as Quartic, Cubic, Linear and LHSC. This thesis proposes two novel schemes namely “Hartley Image Suppression” and “Adaptive Sinusoidal Interference Cancellation” overcoming the low noise floor of traditional dithering schemes. The simulation studies on a Taylor series-based DDS reveal an improvement in SFDR from 74 dB to 114 dB by using Least Mean Squares -Sinusoidal Interference Canceller (LM-SIC) with the noise floor maintained at -200 dB. Analytical formulations have been developed for a second order PLL to relate the phase noise to settling time and Phase Margin (PM) as well as to relate jitter variance and PM. New expressions relating phase noise to PM and lock time to PM are derived. This thesis derives the analytical relationship between the roots of the characteristic equation of a third order PLL and its performance metrics like PM, Gardner’s stability factor, jitter variance, spur gain and ratio of noise power to carrier power. This thesis presents an analysis to relate spur gain and capacitance ratio of a third order PLL. This thesis presents an analytical relationship between the lock time and the roots of its characteristic equation of a third order PLL. Through Vieta’s circle and Vieta’s angle, the performance metrics of a third order PLL are related to the real roots of its characteristic equation

Wideband Low Noise Oscillator suitable for Injection Locking

There is a growing need to design compact and low power transceiver circuits. The increasingly crowded frequency spectrum leads to increased challenges associated with transceiver design. In particular, it becomes imperative that the oscillator circuits have a low phase noise. RC oscillators have the ability to produce wideband oscillations with reduced area and low power consumption. However, a serious drawback is its high phase noise, which leads to poor circuit performance. To improve the performance of an RC oscillator, it is common for it to be integrated into a frequency synthesizer. The most common approach of a synthesizer is the Phase- Locked Loop (PLL). This approach leads to an increase in the area and complexity of the circuit. Another approach to a synthesizer is an Injection-Locked Oscillator (ILO), which achieves similar performances to a PLL without the disadvantages referred to above. In this thesis, an ILO based on an RC oscillator, using a Spin Torque Oscillator (STO) as a reference generator, is presented. The circuit is implemented in two different Complementary Metal-Oxide-Semiconductor (CMOS) technologies: 130 nm CMOS and 180 nm CMOS. The STO used as reference has characteristics similar to a nanometric device developed at the International Iberian Nanotechnology Laboratory (INL). In addition, the ILO operates in a wide frequency band ranging from 100 MHz to 3 GHz, has a power consumption ranging from 2.94 mW to 6.81 mW for 130 nm CMOS technology, whereas in 180nm CMOS technology it consumes between 4.86 mW and 13.96 mW. Thus, the work developed in the course of this thesis serves as proof of concept for the manufacture of a fully integrated hybrid ILO using the STO technology in conjunction with CMOS circuits

Low power low voltage quadrature RC oscillators for modern RF receivers

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de ComputadoresThis thesis proposes a study of three different RC oscillators, two relaxation and a ring oscillator. All the circuits are implemented using UMC 130 nm CMOS technology with a supply voltage of 1.2 V. We present a wideband MOS current/voltage controlled quadrature oscillator constituted by two multivibrators. Two different forms of coupling named, soft (traditional)and hard (proposed) are differentiated and investigated. It is found that hard coupling reduces the quadrature error and results in a low phase-noise (about 2 dB improvement) with respect to soft coupling. The behaviour of the singular and coupled multivibrators is investigated, when an external synchronizing harmonic is applied. We introduce a new RC relaxation oscillator with pulse self biasing, to reduce power consumption, and with harmonic ltering and resistor feedback, to reduce phase-noise. The designed circuit has a very low phase-noise, -132.6 dBc/Hz @ 10 MHz offset, and the power consumption is only 1 mW, which leads to a gure of merit (FOM) of -159.1 dBc/Hz. The nal circuit is a two integrator fully implemented in CMOS technology, with low power consumption. The respective layout is made and occupies a total area of5.856x10-3 mm2, post-layout simulation is also done

Integrated RF oscillators and LO signal generation circuits

This thesis deals with fully integrated LC oscillators and local oscillator (LO) signal generation circuits. In communication systems a good-quality LO signal for up- and down-conversion in transmitters is needed. The LO signal needs to span the required frequency range and have good frequency stability and low phase noise. Furthermore, most modern systems require accurate quadrature (IQ) LO signals. This thesis tackles these challenges by presenting a detailed study of LC oscillators, monolithic elements for good-quality LC resonators, and circuits for IQ-signal generation and for frequency conversion, as well as many experimental circuits. Monolithic coils and variable capacitors are essential, and this thesis deals with good structures of these devices and their proper modeling. As experimental test devices, over forty monolithic inductors and thirty varactors have been implemented, measured and modeled. Actively synthesized reactive elements were studied as replacements for these passive devices. At first glance these circuits show promising characteristics, but closer noise and nonlinearity analysis reveals that these circuits suffer from high noise levels and a small dynamic range. Nine circuit implementations with various actively synthesized variable capacitors were done. Quadrature signal generation can be performed with three different methods, and these are analyzed in the thesis. Frequency conversion circuits are used for alleviating coupling problems or to expand the number of frequency bands covered. The thesis includes an analysis of single-sideband mixing, frequency dividers, and frequency multipliers, which are used to perform the four basic arithmetical operations for the frequency tone. Two design cases are presented. The first one is a single-sideband mixing method for the generation of WiMedia UWB LO-signals, and the second one is a frequency conversion unit for a digital period synthesizer. The last part of the thesis presents five research projects. In the first one a temperature-compensated GaAs MESFET VCO was developed. The second one deals with circuit and device development for an experimental-level BiCMOS process. A cable-modem RF tuner IC using a SiGe process was developed in the third project, and a CMOS flip-chip VCO module in the fourth one. Finally, two frequency synthesizers for UWB radios are presented

RF CMOS quadrature voltage-controlled oscillator design using superharmonic coupling method.

Chung, Wai Fung.Thesis (M.Phil.)--Chinese University of Hong Kong, 2007.Includes bibliographical references (leaves 98-100).Abstracts in English and Chinese.摘要 --- p.IIIACKNOWLEDGEMENT --- p.IVCONTENTS --- p.VLIST OF FIGURES --- p.VIIILIST OF TABLES --- p.XLIST OF TABLES --- p.XChapter CHAPTER 1 --- INTRODUCTION --- p.1Chapter 1.1 --- Motivation --- p.1Chapter 1.2 --- Receiver Architecture --- p.3Chapter 1.2.1 --- Zero-IF Receivers --- p.4Chapter 1.2.2 --- Low-IF Receivers --- p.6Chapter 1.2.2.1 --- Hartley Architecture --- p.7Chapter 1.2.2.2 --- Weaver Architecture --- p.9Chapter 1.3 --- Image-rejection ratio --- p.10Chapter 1.4 --- Thesis Organization --- p.12Chapter CHAPTER 2 --- FUNDAMENTALS OF OSCILLATOR --- p.13Chapter 2.1 --- Basic Oscillator Theory --- p.13Chapter 2.2 --- Varactor --- p.15Chapter 2.3 --- Inductor --- p.17Chapter 2.4 --- Phase noise --- p.22Chapter 2.4.1 --- The Leeson ´ةs phase noise expression --- p.24Chapter 2.4.2 --- Linear model --- p.25Chapter 2.4.3 --- Linear Time-Variant phase noise model --- p.28Chapter CHAPTER 3 --- FULLY-INTEGRATED CMOS OSCILLATOR DESIGN --- p.31Chapter 3.1 --- Ring oscillator --- p.31Chapter 3.2 --- LC oscillator --- p.33Chapter 3.2.1 --- LC-tank resonator --- p.34Chapter 3.2.2 --- Negative transconductance --- p.36Chapter 3.3 --- Generation of quadrature phase signals --- p.39Chapter 3.4 --- Quadrature VCO topologies --- p.41Chapter 3.4.1 --- Parallel-coupled QVCO --- p.41Chapter 3.4.2 --- Series-coupled QVCO --- p.46Chapter 3.4.3 --- QVCO with Back-gate Coupling --- p.47Chapter 3.4.4 --- QVCO using superharmonic coupling --- p.49Chapter 3.5 --- Novel QVCO using back-gate superharmonic coupling --- p.52Chapter 3.5.1 --- Tuning range --- p.54Chapter 3.5.2 --- Negative gm --- p.55Chapter 3.5.3 --- Phase noise calculation --- p.56Chapter 3.5.4 --- Coupling coefficient --- p.57Chapter 3.5.5 --- Low-voltage and low-power design --- p.59Chapter 3.5.6 --- Layout Consideration --- p.61Chapter 3.5.6.1 --- Symmetrical Layout and parasitics --- p.61Chapter 3.5.6.2 --- Metal width and number of vias --- p.63Chapter 3.5.6.3 --- Substrate contact and guard ring --- p.63Chapter 3.5.7 --- Simulation Results --- p.65Chapter 3.5.7.1 --- Frequency and output power --- p.65Chapter 3.5.7.2 --- Quadrature signal generation --- p.67Chapter 3.5.7.3 --- Tuning range --- p.67Chapter 3.5.7.4 --- Power consumption --- p.68Chapter 3.5.7.5 --- Phase noise --- p.69Chapter 3.6 --- Polyphase filter and Single-sideband mixer design --- p.70Chapter 3.6.1 --- Polyphase filter --- p.72Chapter 3.6.2 --- Layout Consideration --- p.74Chapter 3.6.3 --- Simulation results --- p.76Chapter 3.7 --- Comparison with parallel-coupled QVCO --- p.78Chapter CHAPTER 4 --- EXPERIMENTAL RESULTS --- p.80Chapter 4.1 --- Test Fixture --- p.82Chapter 4.2 --- Measurement set-up --- p.84Chapter 4.3 --- Measurement results --- p.86Chapter 4.3.1 --- Proposed QVCO using back-gate superharmonic coupling --- p.86Chapter 4.3.1.1 --- Output Spectrum --- p.86Chapter 4.3.1.2 --- Tuning range --- p.87Chapter 4.3.1.3 --- Phase noise --- p.88Chapter 4.3.1.4 --- Power consumption --- p.88Chapter 4.3.1.5 --- Image-rejection ratio --- p.89Chapter 4.3.2 --- Parallel-coupled QVCO --- p.90Chapter 4.3.2.1 --- Output spectrum --- p.90Chapter 4.3.2.2 --- Power consumption --- p.90Chapter 4.3.2.3 --- Tuning range --- p.91Chapter 4.3.2.4 --- Phase noise --- p.92Chapter 4.3.3 --- Comparison between proposed and parallel-coupled QVCO --- p.93Chapter CHAPTER 5 --- CONCLUSIONS --- p.95Chapter 5.1 --- Conclusions --- p.95Chapter 5.2 --- Future work --- p.97REFERENCES --- p.9

Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. Traditionally, microwave electronics has used exclusive and more expensive semiconductor technologies (III-V materials). However, the rapid development of consumer electronics (e.g. video game consoles) the last decade has pushed the silicon CMOS IC technology towards even smaller feature sizes. This has resulted in high speed transistors (high fT and fmax) with low noise figures. However, as the breakdown voltages have decreased, a lower supply voltage must be used, which has had a negative impact on linearity and dynamic range. Nonetheless, todays downscaled CMOS technology is a feasible alternative for many microwave and even millimeter wave applications. The low quality factor (Q) of passive components on-chip usually limits the high frequency performance. For inductors realized in a standard CMOS process the substrate coupling results in a degraded Q. The quality factor can, however, be improved by moving the passive components off-chip and integrating them on a low loss carrier. This thesis therefore features microwave front-end and VCO designs in CMOS, where some designs have been flip-chip mounted on carriers featuring high Q inductors and low loss baluns. The thesis starts with an introduction to wireless communication, receiver architectures, front-end receiver blocks, and low loss carrier technology, followed by the included papers. The six included papers show the capability of CMOS and carrier technology at microwave frequencies: Papers II, III, and VI demonstrate fully integrated CMOS circuit designs. An LC-VCO using an accumulation mode varactor is presented in Paper II, a QVCO using 4-bit switched tuning is shown in Paper III, and a quadrature receiver front-end (including QVCO) is demonstrated in paper VI. Papers I and IV demonstrate receiver front-ends using low loss baluns on carrier for the LO and RF signals. Paper IV also includes a front-end using single-ended RF input which is converted to differential form in a novel merged LNA and balun. A VCO demonstrating the benefits of a high Q inductor on carrier is presented in Paper V

Circuit Design Techniques For Wideband Phased Arrays

University of Minnesota Ph.D. dissertation.June 2015. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xii, 143 pages.This dissertation focuses on beam steering in wideband phased arrays and phase noise modeling in injection locked oscillators. Two different solutions, one in frequency and one in time, have been proposed to minimize beam squinting in phased arrays. Additionally, a differential current reuse frequency doubler for area and power savings has been proposed. Silicon measurement results are provided for the frequency domain solution (IBM 65nm RF CMOS), injection locked oscillator model verification (IBM 130nm RF-CMOS) and frequency doubler (IBM 65nm RF CMOS), while post extraction simulation results are provided for the time domain phased array solution (the chip is currently under fabrication, TSMC 65nm RF CMOS). In the frequency domain solution, a 4-point passive analog FFT based frequency tunable filter is used to channelize an incoming wideband signal into multiple narrowband signals, which are then processed through independent phase shifters. A two channel prototype has been developed at 8GHz RF frequency. Three discrete phase shifts (0 & +/- 90 degrees) are implemented through differential I-Q swapping with appropriate polarity. A minimum null-depth of 19dB while a maximum null-depth of 27dB is measured. In the time domain solution, a discrete time approach is undertaken with signals getting sampled in order of their arrival times. A two-channel prototype for a 2GHz instantaneous RF bandwidth (7GHz-9GHz) has been designed. A QVCO generates quadrature LO signals at 8GHz which are phase shifted through a 5-bit (2 extra bits from differential I-Q swapping with appropriate polarity) cartesian combiner. Baseband sampling clocks are generated from phase shifted LOs through a CMOS divide by 4 with independent resets. The design achieves an average time delay of 4.53ps with 31.5mW of power consumption (per channel, buffers excluded). An injection locked oscillator has been analyzed in s-domain using Paciorek's time domain transient equations. The simplified analysis leads to a phase noise model identical to that of a type-I PLL. The model is equally applicable to injection locked dividers and multipliers and has been extended to cover all injection locking scenarios. The model has been verified against a discrete 57MHz Colpitt's ILO, a 6.5GHz ILFD and a 24GHz ILFM with excellent matching between the model and measurements. Additionally, a differential current reuse frequency doubler, for frequency outputs between 7GHz to 14GHz, design has been developed to reduce passive area and dc power dissipation. A 3-bit capacitive tuning along with a tail current source is used to better conversion efficiency. The doubler shows FOM$_{T}$ values between 191dBc/Hz to 209dBc/Hz when driven by a 0.7GHz to 5.8GHz wide tuning VCO with a phase noise that ranges from -114dBc/Hz to -112dBc/Hz over the same bandwidth

Design of Frequency divider with voltage vontrolled oscillator for 60 GHz low power phase-locked loops in 65 nm RF CMOS

Increasing memory capacity in mobile devices, is driving the need of high-data rates equipment. The 7 GHz band around 60 GHz provides the opportunity for multi-gigabit/sec wireless communication. It is a real opportunity for developing next generation of High-Definition (HD) devices. In the last two decades there was a great proliferation of Voltage Controlled Oscillator (VCO) and Frequency Divider (FD) topologies in RF ICs on silicon, but reaching high performance VCOs and FDs operating at 60 GHz is in today's technology a great challenge. A key reason is the inaccuracy of CMOS active and passive device models at mm-W. Three critical issues still constitute research objectives at 60 GHz in CMOS: generation of the Local Oscillator (LO) signal (1), division of the LO signal for the Phase-Locked Loop (PLL) closed loop (2) and distribution of the LO signal (3). In this Thesis, all those three critical issues are addressed and experimentally faced-up: a divide-by-2 FD for a PLL of a direct-conversion transceiver operating at mm-W frequencies in 65 nm RF CMOS technology has been designed. Critical issues such as Process, Voltage and Temperature (PVT) variations, Electromagnetic (EM) simulations and power consumption are addressed to select and design a FD with high frequency dividing range. A 60 GHz VCO is co-designed and integrated in the same die, in order to provide the FD with mm-W input signal. VCOs and FDs play critical roles in the PLL. Both of them constitute the PLL core components and they would need co-design, having a big impact in the overall performance especially because they work at the highest frequency in the PLL. Injection Locking FD (ILFD) has been chosen as the optimum FD topology to be inserted in the control loop of mm-W PLL for direct-conversion transceiver, due to the high speed requirements and the power consumption constraint. The drawback of such topology is the limited bandwidth, resulting in narrow Locking Range (LR) for WirelessHDTM applications considering the impact of PVT variations. A simulation methodology is presented in order to analyze the ILFD locking state, proposing a first divide-by-2 ILFD design with continuous tuning. In order to design a wide LR, low power consumption ILFD, the impacts of various alternatives of low/high Q tank and injection scheme are deeply analysed, since the ILFD locking range depends on the Q of the tank and injection efficiency. The proposed 3-bit dual-mixing 60 GHz divide-by-2 LC-ILFD is designed with an accumulation of switching varactors binary scaled to compensate PVT variations. It is integrated in the same die with a 4-bit 60 GHz LC-VCO. The overall circuit is designed to allow measurements of the singles blocks stand-alone and working together. The co-layout is carried on with the EM modelling process of passives devices, parasitics and transmission lines extracted from the layout. The inductors models provided by the foundry are qualified up to 40 GHz, therefore the EM analysis is a must for post-layout simulation. The PVT variations have been simulated before manufacturing and, based on the results achieved, a PLL scheme PVT robust, considering frequency calibration, has been patented. The test chip has been measured in the CEA-Leti (Grenoble) during a stay of one week. The operation principle and the optimization trade-offs among power consumption, and locking ranges of the final selected ILFD topology have been demonstrated. Even if the experimental results are not completely in agreement with the simulations, due to modelling error and inaccuracy, the proposed technique has been validated with post-measurement simulations. As demonstrated, the locking range of a low-power, discrete tuned divide-by-2 ILFD can be enhanced by increasing the injection efficiency, without the drawbacks of higher power consumption and chip area. A 4-bits wide tuning range LC-VCO for mm-W applications has been co-designed using the selected 65 nm CMOS process.Postprint (published version