612 research outputs found

    The transfer matrix: a geometrical perspective

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    We present a comprehensive and self-contained discussion of the use of the transfer matrix to study propagation in one-dimensional lossless systems, including a variety of examples, such as superlattices, photonic crystals, and optical resonators. In all these cases, the transfer matrix has the same algebraic properties as the Lorentz group in a (2+1)-dimensional spacetime, as well as the group of unimodular real matrices underlying the structure of the abcd law, which explains many subtle details. We elaborate on the geometrical interpretation of the transfer-matrix action as a mapping on the unit disk and apply a simple trace criterion to classify the systems into three types with very different geometrical and physical properties. This approach is applied to some practical examples and, in particular, an alternative framework to deal with periodic (and quasiperiodic) systems is proposed.Comment: 50 pages, 24 figure

    Light-matter interaction in low-dimensional materials. A theoretical study

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    The effect of electron-hole pairs in semiconductor and topological insulator nanostructures on plasmon resonances and photon polarizations.

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    The generation of electron-hole pairs in materials has great importance. In direct bandgap semiconductor materials, the mechanism of radiative recombination of electron-hole pairs leads to the emission of photons, which is the basis of Light Emitting Diodes (LEDs). The excitation of electron-hole pairs by absorption of photons is the active process in photodiodes, solar cells, and other semiconductor photodetector devices. In optoelectronic devices such as optical switches which are based on transmission and reflection of the photons, electron-hole pairs excitation is a key for the device performance. Diodes and transistors are also great discoveries in electronics which rely on the generation and recombination of electron-hole pairs at p-n junctions. In three-dimensional topological insulators (3D TIs) materials nanostructures excitation of electron-hole pairs can be utilized for the quantum memory, quantum information and quantum teleportation. In two-dimensional (2D) layered materials like graphene, MoS2, MoSe2, WS2 and WSe2 generation and recombination of electron hole pairs is main process at p-n junctions, infrared detectors and sensors. This PhD thesis is concerned with the physics of different types of electron-hole pairs in various materials, such as wide-bandgap semiconductors, 3D topological insulators, and plasmonic excitations in metallic nanostructures. The materials of interest are wide bandgap semiconductors such as TiO2 , 3D TIs such as Pb1-xSnxTe and the 2D layered materials such as MoS2 and MoO3. We study the electronic and optical properties in bulk and nanostructures and find applications in the area of semiclassical and quantum information processing. One of the interesting applications we focus in this thesis is shift in surface plasmon resonance due to reduction in index of refraction of surrounding dielectric environment which in turns shifts the wavelength of surface plasmon resonance up to 125 nm for carrier density of 10^22/cm^3. Employing this effect, we present a model of a light controlled plasmon switching using a hybrid metal-dielectric heterostructures. In 3D TIs nanostructures, the time reversible spin partners in the valence and conduction band can be coupled by a left and a right handed circular polarization of the light. Such coupling of light with electron-hole pair polarization provides an unique opportunity to utilize 3D TIs in quantum information processing and spintronics devices. We present a model of a 3D TI quantum dot made of spherical core-bulk heterostructure. When a 3D TI QD is embedded inside a cavity, the single-photon Faraday rotation provides the possibility to implement optically mediated quantum teleportation and quantum information processing with 3D TI QDs, where the qubit is defined by either an electron-hole pair, a single electron spin, or a single hole spin in a 3D TI QD. Due to excellent transport properties in single and multiple layers of 2D layered materials, several efforts have demonstrated the possibility to engineer electronic and optoelectronic devices based on MoS2. In this thesis, we focus on theoretical and experimental study of electrical property and photoluminescence tuning, both in a single-layer of MoS2.We present theoretical analysis of experimental results from the point of view of stability of MoO3 defects in MoS2 single layer and bandstructures calculation. In experiment, the electrical property of a single layer of MoS2 can be tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The quenching of photoluminescence of a single sheet of MoS2 has also been observed upon exposure to oxygen plasmas. We calculate the direct to indirect band gap transitions by going from MoS2 single sheet to MoO3 single sheet during the plasma exposure, which is due to the formation of MoO3 rich defect domains inside a MoS2 sheet

    NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

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    Phonon-polaritonics: enabling powerful capabilities for infrared photonics

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    Here, we review the progress and most recent advances in phonon-polaritonics, an emerging and growing field that has brought about a range of powerful possibilities for mid- to far-infrared (IR) light. These extraordinary capabilities are enabled by the resonant coupling between the impinging light and the vibrations of the material lattice, known as phonon-polaritons (PhPs). These PhPs yield a characteristic optical response in certain materials, occurring within an IR spectral window known as the reststrahlen band. In particular, these materials transition in the reststrahlen band from a high-refractive-index behavior, to a near-perfect metal behavior, to a plasmonic behavior – typical of metals at optical frequencies. When anisotropic they may also possess unconventional photonic constitutive properties thought of as possible only with metamaterials. The recent surge in two-dimensional (2D) material research has also enabled PhP responses with atomically-thin materials. Such vast and extraordinary photonic responses can be utilized for a plethora of unusual effects for IR light. Examples include sub-diffraction surface wave guiding, artificial magnetism, exotic photonic dispersions, thermal emission enhancement, perfect absorption and enhanced near-field heat transfer. Finally, we discuss the tremendous potential impact of these IR functionalities for the advancement of IR sources and sensors, as well as for thermal management and THz-diagnostic imaging

    Bandwidth enhancement of dielectric resonator antennas

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    An experimental investigation of bandwidth enhancement of dielectric resonator antennas (DRA) using parasitic elements is reported. Substantial bandwidth enhancement for the HE(sub 11delta) mode of the stacked geometry and for the HE(sub 13delta) mode of the coplanar collinear geometry was demonstrated. Excellent radiation patterns for the HE(sub 11delta) mode were also recorded

    Mobility Modeling of Gallium Nitride Nanowires

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    abstract: Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver is developed for an Aluminum Gallium Nitride/Gallium Nitride Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is designed which creates 2-dimensional potential well for electrons. The nanowire is treated as a quasi-1D system in this work. A self-consistent 2D Schrödinger-Poisson solver is designed which determines the subband energies and the corresponding wavefunctions of the confined system. Three scattering mechanisms: acoustic phonon scattering, polar optical phonon scattering and piezoelectric scattering are considered to account for the electron phonon interactions in the system. Overlap integrals and 1D scattering rate expressions are derived for all the mechanisms listed. A generic one-dimensional Monte Carlo solver is also developed. Steady state results from the 1D Monte Carlo solver are extracted to determine the low field mobility of the GaN nanowires.Dissertation/ThesisMasters Thesis Electrical Engineering 201

    Advanced Photonic Sciences

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    The new emerging field of photonics has significantly attracted the interest of many societies, professionals and researchers around the world. The great importance of this field is due to its applicability and possible utilization in almost all scientific and industrial areas. This book presents some advanced research topics in photonics. It consists of 16 chapters organized into three sections: Integrated Photonics, Photonic Materials and Photonic Applications. It can be said that this book is a good contribution for paving the way for further innovations in photonic technology. The chapters have been written and reviewed by well-experienced researchers in their fields. In their contributions they demonstrated the most profound knowledge and expertise for interested individuals in this expanding field. The book will be a good reference for experienced professionals, academics and researchers as well as young researchers only starting their carrier in this field
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