Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device

In this paper, we investigate the impact of Source/Drain (S/D) implant and salicide on poly sheet resistance (RS) and leakage current (I Leak ) in 45nm NMOS device performance. The experimental studies were conducted under varying four process parameters, namely Halo implant, Source/Drain Implant, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the RS and I Leak were determined by using analysis of variance (ANOVA). The fabrication of the devices was performed by using fabrication simulator of ATHENA. The electrical characterization of the device was implemented by using electrical characterization simulator of ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizing the process parameters. The optimum process parameter combination was obtained by using the analysis of signal-tonoise (S/N) ratio. In this research, the most effective process parameters with respect to poly sheet resistance and leakage current are silicide anneal temperature (88%) and S/D implant (62%) respectively. Whereas the second ranking factor affecting the poly sheet resistance and leakage current are S/D implant (12%) and silicide anneal temperature (20%) respectively. As conclusions, S/D implant and silicide annealtemperature have the strongest effect on the response characteristics. The results show that the R S and I Leak after optimizations approaches are 42.28□□ and 0.1186mA/□m respectivel

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT

Impact of SALICIDE and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device

In this paper, we investigate the impact of Source/Drain (S/D) implant and salicide on poly sheet resistance (RS) and leakage current (ILeak) in 45nm NMOS device performance. The experimental studies were conducted under varying four process parameters, namely Halo implant, Source/Drain Implant, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the RS and ILeak were determined by using analysis of variance (ANOVA). The fabrication of the devices was performed by using fabrication simulator of ATHENA. The electrical characterization of the device was implemented by using electrical characterization simulator of ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizing the process parameters. The optimum process parameter combination was obtained by using the analysis of signal-to-noise (S/N) ratio. In this research, the most effective process parameters with respect to poly sheet resistance and leakage current are silicide anneal temperature (88%) and S/D implant (62%) respectively. Whereas the second ranking factor affecting the poly sheet resistance and leakage current are S/D implant (12%) and silicide anneal temperature (20%) respectively. As conclusions, S/D implant and silicide anneal temperature have the strongest effect on the response characteristics. The results show that the RS and ILeak after optimizations approaches are 42.28 ohm/squares and 0.1186 mA/um respectively

Towards Oxide Electronics:a Roadmap

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics

Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device

The optimization of 45nm NMOS device was studied using Taguchi Method. This method was used to analyze the experimental data in order to get the optimum results. In this paper, there are four factors were varied for 3 levels to perform 9 experiments. Silicide on the poly-Si gate electrode was used to reduce the gate electrode resistance. The virtually fabrication of 45nm NMOS device was performed by using ATHENA module. While the electrical characterization of device was implemented by using ATLAS module. The values of oxide and silicide thickness after optimization approach were 1.52709nm and 25.26nm respectively. The result of the threshold voltage (VTH) is 0.148468 Volts. In this research, silicide thickness and oxide thickness are the main factors were identified as the source of the inability of the transistors to perform. The oxide thickness also was identified as one of the factors that has the strongest effect on the response characteristics