Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

Static noise margin analysis for CMOS logic cells in near-threshold

The advancement of semiconductor technology enabled the fabrication of devices with faster switching activity and chips with higher integration density. However, these advances are facing new impediments related to energy and power dissipation. Besides, the increasing demand for portable devices leads the circuit design paradigm to prioritize energy efficiency instead of performance. Altogether, this scenario motivates engineers towards reducing the supply voltage to the near and subthreshold regime to increase the lifespan of battery-powered devices. Even though operating in these regime offer interesting energy-frequency trade-offs, it brings challenges concerning noise tolerance. As the supply voltage reduces, the available noise margins decrease, and circuits become more prone to functional failures. In addition, near and subthreshold circuits are more susceptible to manufacturing variability, hence further aggravating noise issues. Other issues, such as wire minimization and gate fan-out, also contribute to the relevance of evaluating the noise margin of circuits early in the design Accordingly, this work investigates how to improve the static noise margin of digital synchronous circuits that will operate at the near/subthreshold regime. This investigation produces a set of three original contributions. The first is an automated tool to estimate the static noise margin of CMOS combinational cells. The second contribution is a realistic static noise margin estimation methodology that considers process-voltage-temperature variations. Results show that the proposed methodology allows to reduce up to 70% of the static noise margin pessimism. Finally, the third contribution is the noise-aware cell design methodology and the inclusion of a noise evaluation of complex circuits during the logic synthesis. The resulting library achieved higher static noise margin (up to 24%) and less spread among different cells (up to 62%).Os avanços na tecnologia de semicondutores possibilitou que se fabricasse dispositivos com atividade de chaveamento mais rápida e com maior capacidade de integração de transistores. Estes avanços, todavia, impuseram novos empecilhos relacionados com a dissipação de potência e energia. Além disso, a crescente demanda por dispositivos portáteis levaram à uma mudança no paradigma de projeto de circuitos para que se priorize energia ao invés de desempenho. Este cenário motivou à reduzir a tensão de alimentação com qual os dispositivos operam para um regime próximo ou abaixo da tensão de limiar, com o objetivo de aumentar sua duração de bateria. Apesar desta abordagem balancear características de performance e energia, ela traz novos desafios com relação a tolerância à ruído. Ao reduzirmos a tensão de alimentação, também reduz-se a margem de ruído disponível e, assim, os circuitos tornam-se mais suscetíveis à falhas funcionais. Somado à este efeito, circuitos com tensões de alimentação nestes regimes são mais sensíveis à variações do processo de fabricação, logo agravando problemas com ruído. Existem também outros aspectos, tais como a miniaturização das interconexões e a relação de fan-out de uma célula digital, que incentivam a avaliação de ruído nas fases iniciais do projeto de circuitos integrados Por estes motivos, este trabalho investiga como aprimorar a margem de ruído estática de circuitos síncronos digitais que irão operar em tensões no regime de tensão próximo ou abaixo do limiar. Esta investigação produz um conjunto de três contribuições originais. A primeira é uma ferramenta capaz de avaliar automaticamente a margem de ruído estática de células CMOS combinacionais. A segunda contribuição é uma metodologia realista para estimar a margem de ruído estática considerando variações de processo, tensão e temperatura. Os resultados obtidos mostram que a metodologia proposta permitiu reduzir até 70% do pessimismo das margens de ruído estática, Por último, a terceira contribuição é um fluxo de projeto de células combinacionais digitais considerando ruído, e uma abordagem para avaliar a margem de ruído estática de circuitos complexos durante a etapa de síntese lógica. A biblioteca de células resultante deste fluxo obteve maior margem de ruído (até 24%) e menor variação entre diferentes células (até 62%)

Ultra-low Voltage Digital Circuits and Extreme Temperature Electronics Design

Certain applications require digital electronics to operate under extreme conditions e.g., large swings in ambient temperature, very low supply voltage, high radiation. Such applications include sensor networks, wearable electronics, unmanned aerial vehicles, spacecraft, and energyharvesting systems. This dissertation splits into two projects that study digital electronics supplied by ultra-low voltages and build an electronic system for extreme temperatures. The first project introduces techniques that improve circuit reliability at deep subthreshold voltages as well as determine the minimum required supply voltage. These techniques address digital electronic design at several levels: the physical process, gate design, and system architecture. This dissertation analyzes a silicon-on-insulator process, Schmitt-trigger gate design, and asynchronous logic at supply voltages lower than 100 millivolts. The second project describes construction of a sensor digital controller for the lunar environment. Parts of the digital controller are an asynchronous 8031 microprocessor that is compatible with synchronous logic, memory with error detection and correction, and a robust network interface. The digitial sensor ASIC is fabricated on a silicon-germanium process and built with cells optimized for extreme temperatures

Improvement of a Propagation Delay Model for CMOS Digital Logic Circuits

Propagation delay models, for CMOS Digital Circuits, provide an initial design solution for Integrated Circuits. Resources, both monetary and manpower, constrain the design process, leading to the need for a more accurate entry point further along in the design cycle. By verifying an existing propagation delay method, and its resulting delay model, calibration for any given process technology can be achieved. Literature reviews and detailed analysis of each step in the model development allow for greater understanding of each contributing parameter, and ultimately, adjustments to the model calibration result in a more accurate analytical model. An existing model was verified and improved upon using TSMC 0.18um and IBM 0.13um SPICE decks, and the resulting improvements can be used to further assist individuals needing a method and model for deriving an initial circuit design solution for integrated circuits