Neuromorphic Hebbian learning with magnetic tunnel junction synapses

Neuromorphic computing aims to mimic both the function and structure of biological neural networks to provide artificial intelligence with extreme efficiency. Conventional approaches store synaptic weights in non-volatile memory devices with analog resistance states, permitting in-memory computation of neural network operations while avoiding the costs associated with transferring synaptic weights from a memory array. However, the use of analog resistance states for storing weights in neuromorphic systems is impeded by stochastic writing, weights drifting over time through stochastic processes, and limited endurance that reduces the precision of synapse weights. Here we propose and experimentally demonstrate neuromorphic networks that provide high-accuracy inference thanks to the binary resistance states of magnetic tunnel junctions (MTJs), while leveraging the analog nature of their stochastic spin-transfer torque (STT) switching for unsupervised Hebbian learning. We performed the first experimental demonstration of a neuromorphic network directly implemented with MTJ synapses, for both inference and spike-timing-dependent plasticity learning. We also demonstrated through simulation that the proposed system for unsupervised Hebbian learning with stochastic STT-MTJ synapses can achieve competitive accuracies for MNIST handwritten digit recognition. By appropriately applying neuromorphic principles through hardware-aware design, the proposed STT-MTJ neuromorphic learning networks provide a pathway toward artificial intelligence hardware that learns autonomously with extreme efficiency

Stochastic-Based Computing with Emerging Spin-Based Device Technologies

In this dissertation, analog and emerging device physics is explored to provide a technology platform to design new bio-inspired system and novel architecture. With CMOS approaching the nano-scaling, their physics limits in feature size. Therefore, their physical device characteristics will pose severe challenges to constructing robust digital circuitry. Unlike transistor defects due to fabrication imperfection, quantum-related switching uncertainties will seriously increase their susceptibility to noise, thus rendering the traditional thinking and logic design techniques inadequate. Therefore, the trend of current research objectives is to create a non-Boolean high-level computational model and map it directly to the unique operational properties of new, power efficient, nanoscale devices. The focus of this research is based on two-fold: 1) Investigation of the physical hysteresis switching behaviors of domain wall device. We analyze phenomenon of domain wall device and identify hysteresis behavior with current range. We proposed the Domain-Wall-Motion-based (DWM) NCL circuit that achieves approximately 30x and 8x improvements in energy efficiency and chip layout area, respectively, over its equivalent CMOS design, while maintaining similar delay performance for a one bit full adder. 2) Investigation of the physical stochastic switching behaviors of Mag- netic Tunnel Junction (MTJ) device. With analyzing of stochastic switching behaviors of MTJ, we proposed an innovative stochastic-based architecture for implementing artificial neural network (S-ANN) with both magnetic tunneling junction (MTJ) and domain wall motion (DWM) devices, which enables efficient computing at an ultra-low voltage. For a well-known pattern recognition task, our mixed-model HSPICE simulation results have shown that a 34-neuron S-ANN implementation, when compared with its deterministic-based ANN counterparts implemented with digital and analog CMOS circuits, achieves more than 1.5 ~ 2 orders of magnitude lower energy consumption and 2 ~ 2.5 orders of magnitude less hidden layer chip area

Energy and Area Efficient Machine Learning Architectures using Spin-Based Neurons

Recently, spintronic devices with low energy barrier nanomagnets such as spin orbit torque-Magnetic Tunnel Junctions (SOT-MTJs) and embedded magnetoresistive random access memory (MRAM) devices are being leveraged as a natural building block to provide probabilistic sigmoidal activation functions for RBMs. In this dissertation research, we use the Probabilistic Inference Network Simulator (PIN-Sim) to realize a circuit-level implementation of deep belief networks (DBNs) using memristive crossbars as weighted connections and embedded MRAM-based neurons as activation functions. Herein, a probabilistic interpolation recoder (PIR) circuit is developed for DBNs with probabilistic spin logic (p-bit)-based neurons to interpolate the probabilistic output of the neurons in the last hidden layer which are representing different output classes. Moreover, the impact of reducing the Magnetic Tunnel Junction\u27s (MTJ\u27s) energy barrier is assessed and optimized for the resulting stochasticity present in the learning system. In p-bit based DBNs, different defects such as variation of the nanomagnet thickness can undermine functionality by decreasing the fluctuation speed of the p-bit realized using a nanomagnet. A method is developed and refined to control the fluctuation frequency of the output of a p-bit device by employing a feedback mechanism. The feedback can alleviate this process variation sensitivity of p-bit based DBNs. This compact and low complexity method which is presented by introducing the self-compensating circuit can alleviate the influences of process variation in fabrication and practical implementation. Furthermore, this research presents an innovative image recognition technique for MNIST dataset on the basis of p-bit-based DBNs and TSK rule-based fuzzy systems. The proposed DBN-fuzzy system is introduced to benefit from low energy and area consumption of p-bit-based DBNs and high accuracy of TSK rule-based fuzzy systems. This system initially recognizes the top results through the p-bit-based DBN and then, the fuzzy system is employed to attain the top-1 recognition results from the obtained top outputs. Simulation results exhibit that a DBN-Fuzzy neural network not only has lower energy and area consumption than bigger DBN topologies while also achieving higher accuracy