Identification and Rejuvenation of NBTI-Critical Logic Paths in Nanoscale Circuits

The Negative Bias Temperature Instability (NBTI) phenomenon is agreed to be one of the main reliability concerns in nanoscale circuits. It increases the threshold voltage of pMOS transistors, thus, slows down signal propagation along logic paths between flip-flops. NBTI may cause intermittent faults and, ultimately, the circuit’s permanent functional failures. In this paper, we propose an innovative NBTI mitigation approach by rejuvenating the nanoscale logic along NBTI-critical paths. The method is based on hierarchical identification of NBTI-critical paths and the generation of rejuvenation stimuli using an Evolutionary Algorithm. A new, fast, yet accurate model for computation of NBTI-induced delays at gate-level is developed. This model is based on intensive SPICE simulations of individual gates. The generated rejuvenation stimuli are used to drive those pMOS transistors to the recovery phase, which are the most critical for the NBTI-induced path delay. It is intended to apply the rejuvenation procedure to the circuit, as an execution overhead, periodically. Experimental results performed on a set of designs demonstrate reduction of NBTI-induced delays by up to two times with an execution overhead of 0.1 % or less. The proposed approach is aimed at extending the reliable lifetime of nanoelectronics

Negative Bias Temperature Instability (NBTI) Monitoring and Mitigation Technique for MOSFET

修士論

Design of Negative Bias Temperature Instability (NBTI) Tolerant Register File

Degradation of transistor parameter values due to Negative Bias Temperature Instability (NBTI) has emerged as a major reliability problem in current and future technology generations. NBTI Aging of a Static Random Access Memory (SRAM) cell leads to a lower noise margin, thereby increasing the failure rate. The register file, which consists of an array of SRAM cells, can suffer from data loss, leading to a system failure. In this work, we study the source of NBTI stress in an architecture and physical register file. Based on our study, we modified the register file structure to reduce the NBTI degradation and improve the overall system reliability. Having evaluated new register file structures, we find that our techniques substantially improve reliability of the register files. The new register files have small overhead, while in some cases they provide saving in area and power

Age-Acknowledging Reliable Multiplier Design with Adaptive Hold Logic

Digital multipliers are among the most critical arithmetic functional units. The overall performance of these systems depends on the throughput of the multiplier. Meanwhile, the negative bias temperature instability effect occurs when a pMOS transistor is under negative bias (Vgs = −Vdd), increasing the threshold voltage of the pMOS transistor, and reducing multiplier speed. A similar phenomenon, positive bias temperature instability, occurs when an nMOS transistor is under positive bias. Both effects degrade transistor speed, and in the long term, the system may fail due to timing violations. Therefore, it is important to design reliable high performance multipliers. In this paper, we propose an aging-aware multiplier design with novel adaptive hold logic (AHL) circuit. The multiplier is able to provide higher throughput through the variable latency and can adjust the AHL circuit to mitigate performance degradation that is due to the aging effect. Moreover, the proposed architecture can be applied to a column- or row-bypassing multiplier. The experimental results show that our proposed architecture with 16 ×16 and 32 ×32 column-bypassing multipliers can attain up to 62.88% and 76.28% performance improvement, respectively, compared with 16×16 and 32×32 fixed-latency column-bypassing multipliers. Furthermore, our proposed architecture with 16 × 16 and 32 × 32 row-bypassing multipliers can achieve up to 80.17% and 69.40% performance improvement as compared with 16×16 and 32 × 32 fixed-latency row-bypassing multipliers

Aging-Aware Routing Algorithms for Network-on-Chips

Network-on-Chip (NoC) architectures have emerged as a better replacement of the traditional bus-based communication in the many-core era. However, continuous technology scaling has made aging mechanisms, such as Negative Bias Temperature Instability (NBTI) and electromigration, primary concerns in NoC design. In this work, a novel system-level aging model is proposed to model the effects of aging in NoCs, caused due to (a) asymmetric communication patterns between the network nodes, and (b) runtime traffic variations due to routing policies. This work observes a critical need of a holistic aging analysis, which when combined with power-performance optimization, poses a multi-objective design challenge. To solve this problem, two different aging-aware routing algorithms are proposed: (a) congestion-oblivious Mixed Integer Linear Programming (MILP)-based routing algorithm, and (b) congestion-aware adaptive routing algorithm and router micro-architecture. After extensive experimental evaluations, proposed routing algorithms reduce aging-induced power-performance overheads while also improving the system robustness

The impact of transistor aging on the reliability of level shifters in nano-scale CMOS technology

On-chip level shifters are the interface between parts of an Integrated Circuit (IC) that operate in different voltage levels. For this reason, they are indispensable blocks in Multi-Vdd System-on-Chips (SoCs). In this paper, we present a comprehensive analysis of the effects of Bias Temperature Instability (BTI) aging on the delay and the power consumption of level shifters. We evaluate the standard High-to-Low/Low-to-High level shifters, as well as several recently proposed level-shifter designs, implemented using a 32 nm CMOS technology. Through SPICE simulations, we demonstrate that the delay degradation due to BTI aging varies for each level shifter design: it is 83.3% on average and it exceeds 200% after 5 years of operation for the standard Low-to-High and the NDLSs level shifters, which is 10 × higher than the BTI-induced delay degradation of standard CMOS logic cells. Similarly, we show that the examined designs can suffer from an average 38.2% additional power consumption after 5 years of operation that, however, reaches 180% for the standard level-shifter and exceeds 163% for the NDLSs design. The high susceptibility of these designs to BTI is attributed to their differential signaling structure, combined with the very low supply voltage. Moreover, we show that recently proposed level-up shifter design employing a voltage step-down technique are

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin

An online wear state monitoring methodology for off-the-shelf embedded processors

The continued scaling of transistors has led to an exponential increase in on-chip power density, which has resulted in increasing temperature. In turn, the increase in temperature directly leads to the increase in the rate of wear of a processor. Negative-bias temperature instability (NBTI) is one of the most dominant integrated circuit (IC) failure mechanisms [13, 5] that strongly depends on temperature. NBTI manifests in the form of increased circuit delays which can lead to timing failures and processor crashes. The ability to monitor the wear progression of a processor due to NBTI is valuable when designing real-time embedded systems. While NBTI can be detected using wear state sensors, not all chips are equipped with these sensors because detecting wear due to NBTI requires modifications to the chip design and incurs area and power overhead. NBTI sensor data may also not be exposed to users in software. In addition, wear sensors cannot take into account variations in wear due to the differences in the wear sensor devices and the other functional devices and their operating conditions. In this paper, we propose a lightweight, online methodology to monitor the wear process due to NBTI for off-the-shelf embedded processors. Our proposed method requires neither data on the threshold voltage and critical paths nor additional hardware. Our methodology can also be extended to predict the wear progression due to some other dominant IC failure mechanisms. Experiments on embedded processors provide insights on NBTI wear progression over time. This knowledge can be used to design real-time embedded systems that explicitly consider runtime wear progression to increase predictability and maintain lifetime reliability requirements