1,254 research outputs found
Characterization and Scaling of MOS Flip Flop Performance in Synchronizer Applications
The measured and calculated values of t he Flip Flop parameters needed to specify synchronizer reliability are presented for 3 different depletion-load,
silicon gate, NMOS, R-S Flip Flop circuits with gate lengths ranging from 6μm to 4.2μm. Estimates of the probability of synchronizer failure to resolve within allowed or desired times can be determined from these
parameters
RF Circuit linearity optimization using a general weak nonlinearity model
This paper focuses on optimizing the linearity in known RF circuits, by exploring the circuit design space that is usually available in today’s deep submicron CMOS technologies. Instead of using brute force numerical optimizers we apply a generalized weak nonlinearity model that only involves AC transfer functions to derive simple equations for obtaining design insights. The generalized weak nonlinearity model is applied to three known RF circuits: a cascode common source amplifier, a common gate LNA and a CMOS attenuator. It is shown that in deep submicron CMOS technologies the cascode transistor in both the common source amplifier and in the common gate amplifier significantly contributes IM3 distortion. Some design insights are presented for reducing the cascode transistor related distortion, among which moderate inversion biasing that improves IIP3 by 10 dB up to 5 GHz in a 90 nm CMOS process. For the attenuator, a wideband IM3 cancellation technique is introduced and demonstrated using simulations
NEGATIVE BIAS TEMPERATURE INSTABILITY STUDIES FOR ANALOG SOC CIRCUITS
Negative Bias Temperature Instability (NBTI) is one of the recent reliability issues in
sub threshold CMOS circuits. NBTI effect on analog circuits, which require matched
device pairs and mismatches, will cause circuit failure. This work is to assess the
NBTI effect considering the voltage and the temperature variations. It also provides a
working knowledge of NBTI awareness to the circuit design community for reliable
design of the SOC analog circuit. There have been numerous studies to date on the
NBTI effect to analog circuits. However, other researchers did not study the
implication of NBTI stress on analog circuits utilizing bandgap reference circuit. The
reliability performance of all matched pair circuits, particularly the bandgap reference,
is at the mercy of aging differential. Reliability simulation is mandatory to obtain
realistic risk evaluation for circuit design reliability qualification. It is applicable to all
circuit aging problems covering both analog and digital. Failure rate varies as a
function of voltage and temperature. It is shown that PMOS is the reliabilitysusceptible
device and NBTI is the most vital failure mechanism for analog circuit in
sub-micrometer CMOS technology. This study provides a complete reliability
simulation analysis of the on-die Thermal Sensor and the Digital Analog Converter
(DAC) circuits and analyzes the effect of NBTI using reliability simulation tool. In
order to check out the robustness of the NBTI-induced SOC circuit design, a bum-in
experiment was conducted on the DAC circuits. The NBTI degradation observed in
the reliability simulation analysis has given a clue that under a severe stress condition,
a massive voltage threshold mismatch of beyond the 2mV limit was recorded. Bum-in
experimental result on DAC proves the reliability sensitivity of NBTI to the DAC
circuitry
Large scale reconfigurable analog system design enabled through floating-gate transistors
This work is concerned with the implementation and implication of non-volatile charge storage on VLSI system design. To that end, the floating-gate pFET (fg-pFET) is considered in the context of large-scale arrays. The programming of the element in an efficient and predictable way is essential to the implementation of these systems, and is thus explored. The overhead of the control circuitry for the fg-pFET, a key scalability issue, is examined. A light-weight, trend-accurate model is absolutely necessary for VLSI system design and simulation, and is also provided. Finally, several reconfigurable and reprogrammable systems that were built are discussed.Ph.D.Committee Chair: Hasler, Paul E.; Committee Member: Anderson, David V.; Committee Member: Ayazi, Farrokh; Committee Member: Degertekin, F. Levent; Committee Member: Hunt, William D
Design methodologies for built-in testing of integrated RF transceivers with the on-chip loopback technique
Advances toward increased integration and complexity of radio frequency (RF) andmixed-signal integrated circuits reduce the effectiveness of contemporary testmethodologies and result in a rising cost of testing. The focus in this research is on thecircuit-level implementation of alternative test strategies for integrated wirelesstransceivers with the aim to lower test cost by eliminating the need for expensive RFequipment during production testing.The first circuit proposed in this thesis closes the signal path between the transmitterand receiver sections of integrated transceivers in test mode for bit error rate analysis atlow frequencies. Furthermore, the output power of this on-chip loopback block wasmade variable with the goal to allow gain and 1-dB compression point determination forthe RF front-end circuits with on-chip power detectors. The loopback block is intendedfor transceivers operating in the 1.9-2.4GHz range and it can compensate for transmitterreceiveroffset frequency differences from 40MHz to 200MHz. The measuredattenuation range of the 0.052mm2 loopback circuit in 0.13µm CMOS technology was 26-41dB with continuous control, but post-layout simulation results indicate that theattenuation range can be reduced to 11-27dB via optimizations.Another circuit presented in this thesis is a current generator for built-in testing ofimpedance-matched RF front-end circuits with current injection. Since this circuit hashigh output impedance (>1k up to 2.4GHz), it does not influence the input matchingnetwork of the low-noise amplifier (LNA) under test. A major advantage of the currentinjection method over the typical voltage-mode approach is that the built-in test canexpose fabrication defects in components of the matching network in addition to on-chipdevices. The current generator was employed together with two power detectors in arealization of a built-in test for a LNA with 14% layout area overhead in 0.13µm CMOStechnology (<1.5% for the 0.002mm2 current generator). The post-layout simulationresults showed that the LNA gain (S21) estimation with the external matching networkwas within 3.5% of the actual gain in the presence of process-voltage-temperaturevariations and power detector imprecision
Saw-Less radio receivers in CMOS
Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios
Advances in Solid State Circuit Technologies
This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields
Recommended from our members
Combined C-V/I-V and RTN CMOS Variability Characterization Using An On-Chip Measurement System
With the number of transistors integrated into a single integrated circuit (IC) crossing the one-billion mark and complementary metal-oxide-semiconductor (CMOS) technology scaling pushing device dimensions ever-so-close to atomic scales, variability in transistor performance is becoming the dominant constraint in modern-day CMOS IC design. Developing novel approaches for device characterization, which allow a detailed study of electrical transistor characteristics across large statistical sample sets, is crucial for the proper identification, characterization, and modeling of different physical sources of device variability. On-chip characterization methodologies have the potential to address all of these issues by enabling the characterization of large statistical device sample sets, while also allowing for high measurement quality and throughput.
In this work, a fully-integrated system for on-chip combined capacitance-voltage (C-V) and current-voltage (I-V) characterization of a large integrated test transistor array implemented in a 45-nm bulk CMOS process is presented. On-chip I-V characterization is implemented using a four-point Kelvin measurement technique with 12-bit sub-10 nA current measurement resolution, 10-bit sub-1 mV voltage measurement resolution, and sampling speeds on the order of 100 kHz. C-V characterization is performed using a novel leakage- and parasitics-insensitive charge-based capacitance measurement (CBCM) technique with atto-Farad resolution.
The on-chip system is employed in developing a comprehensive CMOS transistor variability characterization methodology, studying both random and systematic sources of quasi-static device variability. For the first time, combined C-V/I-V characterization of circuit-representative devices is demonstrated and used to extract variations in the under- lying physical parameters of the device. Additionally, the fast current sampling capabilities of the system are used for the characterization of random telegraph noise (RTN) in small area devices. An automated methodology for the extraction of RTN parameters is developed, and the statistics of RTN are studied across device type, bias, and geometry
Advanced Trends in Wireless Communications
Physical limitations on wireless communication channels impose huge challenges to reliable communication. Bandwidth limitations, propagation loss, noise and interference make the wireless channel a narrow pipe that does not readily accommodate rapid flow of data. Thus, researches aim to design systems that are suitable to operate in such channels, in order to have high performance quality of service. Also, the mobility of the communication systems requires further investigations to reduce the complexity and the power consumption of the receiver. This book aims to provide highlights of the current research in the field of wireless communications. The subjects discussed are very valuable to communication researchers rather than researchers in the wireless related areas. The book chapters cover a wide range of wireless communication topics
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