39,665 research outputs found
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Noise shaping Asynchronous SAR ADC based time to digital converter
Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin
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The road to fully integrated DC-DC conversion via the switched-capacitor approach
This paper provides a perspective on progress toward realization of efficient, fully integrated dc-dc conversion and regulation functionality in CMOS platforms. In providing a comparative assessment between the inductor-based and switched-capacitor approaches, the presentation reviews the salient features in effectiveness in utilization of switch technology and in use and implementation of passives. The analytical conclusions point toward the strong advantages of the switched-capacitor (SC) approach with respect to both switch utilization and much higher energy densities of capacitors versus inductors. The analysis is substantiated with a review of recently developed and published integrated dc-dc converters of both the inductor-based and SC types. © 2012 IEEE
Integrated chaos generators
This paper surveys the different design issues, from mathematical model to silicon, involved on the design of integrated circuits for the generation of chaotic behavior.Comisión Interministerial de Ciencia y Tecnología 1FD97-1611(TIC)European Commission ESPRIT 3110
A 6.0-mW 10.0-Gb/s Receiver With Switched-Capacitor Summation DFE
A low-power receiver with a one-tap decision feedback equalization (DFE) was fabricated in 90-nm CMOS technology. The speculative equalization is performed using switched-capacitor-based addition at the front-end sample-hold circuit. In order to further reduce the power consumption, an analog multiplexer is used in the speculation technique implementation. A quarter-rate-clocking scheme facilitates the use of low-power front-end circuitry and CMOS clock buffers. The receiver was tested over channels with different levels of ISI. The signaling rate with BER<10^-12 was significantly increased with the use of DFE for short- to medium-distance PCB traces. At 10-Gb/s data rate, the receiver consumes less than 6.0 mW from a 1.0-V supply. This includes the power consumed in all quarter-rate clock buffers, but not the power of a clock recovery loop. The input clock phase and the DFE taps are adjusted externally
Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks
This paper presents a unified, comprehensive approach
to the design of continuous-time (CT) and discrete-time
(DT) cellular neural networks (CNN) using CMOS current-mode
analog techniques. The net input signals are currents instead
of voltages as presented in previous approaches, thus avoiding
the need for current-to-voltage dedicated interfaces in image
processing tasks with photosensor devices. Outputs may be either
currents or voltages. Cell design relies on exploitation of current
mirror properties for the efficient implementation of both linear
and nonlinear analog operators. These cells are simpler and
easier to design than those found in previously reported CT
and DT-CNN devices. Basic design issues are covered, together
with discussions on the influence of nonidealities and advanced
circuit design issues as well as design for manufacturability
considerations associated with statistical analysis. Three prototypes
have been designed for l.6-pm n-well CMOS technologies.
One is discrete-time and can be reconfigured via local logic for
noise removal, feature extraction (borders and edges), shadow
detection, hole filling, and connected component detection (CCD)
on a rectangular grid with unity neighborhood radius. The other
two prototypes are continuous-time and fixed template: one for
CCD and other for noise removal. Experimental results are given
illustrating performance of these prototypes
Supercapacitor assisted LDO (SCALDO) techniquean extra low frequency design approach to high efficiency DC-DC converters and how it compares with the classical switched capacitor converters
Supercapacitor assisted low dropout regulators (SCALDO) were proposed as an alternative design approach to DC-DC converters, where the supercapacitor circulation frequency (switching frequency) is in the order of few Hz to few 10s of Hz, with an output stage based on a low dropout regulator stage. For converters such as 12–5V, 5–3.3V and 5–1.5V, the technique provides efficiency improvement factors of 2, 1.33 and 3 respectively, in compared to linear converters with same input-output combinations. In a 5–1.5V SCALDO regulator, using thin profile supercapacitors in the range of fractional farads to few farads, this translates to an approximate end to end efficiency of near 90%. However, there were concerns that this patented technique is merely a variation of well-known switched capacitor (charge pump) converters. This paper is aimed at providing a broad overview of the capability of SCALDO technique with generalized theory, indicating its capabilities and limitations, and comparing the practical performance with a typical switched capacitor converter of similar current capability
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Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.
Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance
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