A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories

In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage model where the performance-reliability trade-off point can be adjusted at runtime. However, optimization techniques in the memory controller architecture cannot avoid a strict trade-off between UBER and read throughput. In this paper, we show that co-optimizing ECC architecture configuration in the memory controller with program algorithm selection at the technology layer, a more flexible memory sub-system arises, which is capable of unprecedented trade-offs points between performance and reliability

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES

Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned about the electrical characterization, physics, modeling and reliability of innovative non-volatile memories, addressing most of the proposed alternative to the floating-gate based memories which currently are facing a technology dead end. Throughout the chapters of this thesis it will be provided a detailed characterization of the envisioned replacements for the common NOR and NAND Flash technologies into the near future embedded and MPSoCs (Multi Processing System on Chip) systems. In Chapter 1 it will be introduced the non-volatile memory technology with direct reference on nowadays Flash mainstream, providing indications and comments on why the system designers should be forced to change the approach to new memory concepts. In Chapter 2 it will be presented one of the most studied post-floating gate memory technology for MPSoCs: the Phase Change Memory. The results of an extensive electrical characterization performed on these devices led to important discoveries such as the kinematics of the erase operation and potential reliability threats in memory operations. A modeling framework has been developed to support the experimental results and to validate them on projected scaled technology. In Chapter 3 an embedded memory for automotive environment will be shown: the SimpleEE p-channel memory. The characterization of this memory proven the technology robustness providing at the same time new insights on the erratic bits phenomenon largely studied on NOR and NAND counterparts. Chapter 4 will show the research studies performed on a memory device based on the Nano-MEMS concept. This particular memory generation proves to be integrated in very harsh environment such as military applications, geothermal and space avionics. A detailed study on the physical principles underlying this memory will be presented. In Chapter 5 a successor of the standard NAND Flash will be analyzed: the Charge Trapping NAND. This kind of memory shares the same principles of the traditional floating gate technology except for the storage medium which now has been substituted by a discrete nature storage (i.e. silicon nitride traps). The conclusions and the results summary for each memory technology will be provided in Chapter 6. Finally, on Appendix A it will be shown the results of a recently started research activity on the high level reliability memory management exploiting the results of the studies for Phase Change Memories

TOPOLOGY, ANALYSIS, AND CMOS IMPLEMENTATION OF SWITCHED-CAPACITOR DC-DC CONVERTERS

This review highlights various design and realization aspects of three commonly used charge pump topologies, namely, the linear, exponential, and the Fibonacci type of charge pumps. We shall outline the new methods developed recently for analyzing the steady and dynamic performances of these circuits. Some practical issues for the CMOS implementation of these charge pump structures will be critically discussed. Finally, some conventional voltage regulation methods for maintaining a stable output under a large range of loading current and supply voltage fluctuations will be proposed

Design and development of auxiliary components for a new two-stroke, stratified-charge, lean-burn gasoline engine

A unique stepped-piston engine was developed by a group of research engineers at Universiti Teknologi Malaysia (UTM), from 2003 to 2005. The development work undertaken by them engulfs design, prototyping and evaluation over a predetermined period of time which was iterative and challenging in nature. The main objective of the program is to demonstrate local R&D capabilities on small engine work that is able to produce mobile powerhouse of comparable output, having low-fuel consumption and acceptable emission than its crankcase counterpart of similar displacement. A two-stroke engine work was selected as it posses a number of technological challenges, increase in its thermal efficiency, which upon successful undertakings will be useful in assisting the group in future powertrain undertakings in UTM. In its carbureted version, the single-cylinder aircooled engine incorporates a three-port transfer system and a dedicated crankcase breather. These features will enable the prototype to have high induction efficiency and to behave very much a two-stroke engine but equipped with a four-stroke crankcase lubrication system. After a series of analytical work the engine was subjected to a series of laboratory trials. It was also tested on a small watercraft platform with promising indication of its flexibility of use as a prime mover in mobile platform. In an effort to further enhance its technology features, the researchers have also embarked on the development of an add-on auxiliary system. The system comprises of an engine control unit (ECU), a directinjector unit, a dedicated lubricant dispenser unit and an embedded common rail fuel unit. This support system was incorporated onto the engine to demonstrate the finer points of environmental-friendly and fuel economy features. The outcome of this complete package is described in the report, covering the methodology and the final characteristics of the mobile power plant

Potential and Challenges of Analog Reconfigurable Computation in Modern and Future CMOS

In this work, the feasibility of the floating-gate technology in analog computing platforms in a scaled down general-purpose CMOS technology is considered. When the technology is scaled down the performance of analog circuits tends to get worse because the process parameters are optimized for digital transistors and the scaling involves the reduction of supply voltages. Generally, the challenge in analog circuit design is that all salient design metrics such as power, area, bandwidth and accuracy are interrelated. Furthermore, poor flexibility, i.e. lack of reconfigurability, the reuse of IP etc., can be considered the most severe weakness of analog hardware. On this account, digital calibration schemes are often required for improved performance or yield enhancement, whereas high flexibility/reconfigurability can not be easily achieved. Here, it is discussed whether it is possible to work around these obstacles by using floating-gate transistors (FGTs), and analyze problems associated with the practical implementation. FGT technology is attractive because it is electrically programmable and also features a charge-based built-in non-volatile memory. Apart from being ideal for canceling the circuit non-idealities due to process variations, the FGTs can also be used as computational or adaptive elements in analog circuits. The nominal gate oxide thickness in the deep sub-micron (DSM) processes is too thin to support robust charge retention and consequently the FGT becomes leaky. In principle, non-leaky FGTs can be implemented in a scaled down process without any special masks by using “double”-oxide transistors intended for providing devices that operate with higher supply voltages than general purpose devices. However, in practice the technology scaling poses several challenges which are addressed in this thesis. To provide a sufficiently wide-ranging survey, six prototype chips with varying complexity were implemented in four different DSM process nodes and investigated from this perspective. The focus is on non-leaky FGTs, but the presented autozeroing floating-gate amplifier (AFGA) demonstrates that leaky FGTs may also find a use. The simplest test structures contain only a few transistors, whereas the most complex experimental chip is an implementation of a spiking neural network (SNN) which comprises thousands of active and passive devices. More precisely, it is a fully connected (256 FGT synapses) two-layer spiking neural network (SNN), where the adaptive properties of FGT are taken advantage of. A compact realization of Spike Timing Dependent Plasticity (STDP) within the SNN is one of the key contributions of this thesis. Finally, the considerations in this thesis extend beyond CMOS to emerging nanodevices. To this end, one promising emerging nanoscale circuit element - memristor - is reviewed and its applicability for analog processing is considered. Furthermore, it is discussed how the FGT technology can be used to prototype computation paradigms compatible with these emerging two-terminal nanoscale devices in a mature and widely available CMOS technology.Siirretty Doriast

Low-Power and Programmable Analog Circuitry for Wireless Sensors

Embedding networks of secure, wirelessly-connected sensors and actuators will help us to conscientiously manage our local and extended environments. One major challenge for this vision is to create networks of wireless sensor devices that provide maximal knowledge of their environment while using only the energy that is available within that environment. In this work, it is argued that the energy constraints in wireless sensor design are best addressed by incorporating analog signal processors. The low power-consumption of an analog signal processor allows persistent monitoring of multiple sensors while the device\u27s analog-to-digital converter, microcontroller, and transceiver are all in sleep mode. This dissertation describes the development of analog signal processing integrated circuits for wireless sensor networks. Specific technology problems that are addressed include reconfigurable processing architectures for low-power sensing applications, as well as the development of reprogrammable biasing for analog circuits

Low-Power and Programmable Analog Circuitry for Wireless Sensors

Embedding networks of secure, wirelessly-connected sensors and actuators will help us to conscientiously manage our local and extended environments. One major challenge for this vision is to create networks of wireless sensor devices that provide maximal knowledge of their environment while using only the energy that is available within that environment. In this work, it is argued that the energy constraints in wireless sensor design are best addressed by incorporating analog signal processors. The low power-consumption of an analog signal processor allows persistent monitoring of multiple sensors while the device\u27s analog-to-digital converter, microcontroller, and transceiver are all in sleep mode. This dissertation describes the development of analog signal processing integrated circuits for wireless sensor networks. Specific technology problems that are addressed include reconfigurable processing architectures for low-power sensing applications, as well as the development of reprogrammable biasing for analog circuits

Development and characterisation of a process technology for a 0.25µm SiGe:C RF-BiCMOS embedded flash memory

Integrating an embedded-flash memory module into a 0.25µm SiGe:C BiCMOS technology provides an important base for realising microelectronic systems that combine complex logic functionality with highest frequency analogue performance („System-on-Chip“). This dissertation presents for the first time an embedded flash memory module integrated in a 0.25µm SiGe:C BiCMOS process technology and describes the implementation into a process pilot line. The principle process flow and important process steps are described in detail, reviewing also the impact on the original BiCMOS process. The results are assessed geometrically by means of electron microscopy and electrically by characterisation of the developed electronic devices. The influence of important technological parameters is hereby investigated. The feasibility of the process for medium density memory production is finally demonstrated by a first 1-Mbit memory circuit that has been developed and produced based on the presented process technology

Design of Analog-to-Digital Converters with Embedded Mixing for Ultra-Low-Power Radio Receivers

In the field of radio receivers, down-conversion methods usually rely on one (or more) explicit mixing stage(s) before the analog-to-digital converter (ADC). These stages not only contribute to the overall power consumption but also have an impact on area and can compromise the receiver’s performance in terms of noise and linearity. On the other hand, most ADCs require some sort of reference signal in order to properly digitize an analog input signal. The implementation of this reference signal usually relies on bandgap circuits and reference buffers to generate a constant, stable, dc signal. Disregarding this conventional approach, the work developed in this thesis aims to explore the viability behind the usage of a variable reference signal. Moreover, it demonstrates that not only can an input signal be properly digitized, but also shifted up and down in frequency, effectively embedding the mixing operation in an ADC. As a result, ADCs in receiver chains can perform double-duty as both a quantizer and a mixing stage. The lesser known charge-sharing (CS) topology, within the successive approximation register (SAR) ADCs, is used for a practical implementation, due to its feature of “pre-charging” the reference signal prior to the conversion. Simulation results from an 8-bit CS-SAR ADC designed in a 0.13 μm CMOS technology validate the proposed technique