A power cycling degradation inspector of power semiconductor devices

We have proposed a failure analysis based on a real-time monitoring of power devices under acceleration test. The real-time monitoring enables to visualize the mechanism that leads to a failure by obtaining the change of structure inside the device in time domain with high spatial resolution. In this paper, we presented a new analytical instrument based on the proposed failure analysis concept. The essential functions of this instrument are (1) power stress control, (2) non-destructive inspection and (3) water circulation. An original design power-stress control system and a customized scanning acoustic microscopy system enable us a non-destructive inspection inside the device under power cycling test. This instrument exhibits a great advantage especially to monitor failure mechanisms without having to open the module

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrate with a thickness of 1.50 mm covered with a 35μm thick Cu layer were used. A surface finish was prepared from a HAL (hot air leveling) Sn99Cu0.7Ag0.3 layer with a thickness of 1÷40 μm. IGBT transistors NGB8207BN were soldered with SACX0307 (Sn99Ag0.3Cu0.7) paste. The samples were soldered in different soldering ovens and at different temperature profiles. The thermal impedance Zth(t) and thermal resistance Rth of the samples were measured. Microstructural and voids analyzes were performed. It was found that the differences for different samples reached 15% and 20% for Zth(t) and Rth, respectively. Although the ratio of the gas voids in the solder joints varied between 3% and 30%, no correlation between the void ratios and Rth increases was found. In the case of the different soldering tech-nologies the microstructure of the solder joint showed significant differences in the thickness of the IMC (intermetallic compounds) layer; these differences correlate well with the time above liquidus during the soldering process. The thermal parameters of IGBTs could be changed due to the increased thermal conductivity of IMC layer as compared to the thermal conductivity of the solder bulk. Our research highlighted the importance of the soldering technology used and the thermal profile in the case of the assembly of IGBT components

Challenges and New Trends in Power Electronic Devices Reliability

The rapid increase in new power electronic devices and converters for electric transportation and smart grid technologies requires a deepanalysis of their component performances, considering all of the different environmental scenarios, overload conditions, and high stressoperations. Therefore, evaluation of the reliability and availability of these devices becomes fundamental both from technical and economicalpoints of view. The rapid evolution of technologies and the high reliability level offered by these components have shown that estimating reliability through the traditional approaches is difficult, as historical failure data and/or past observed scenarios demonstrate. With the aim topropose new approaches for the evaluation of reliability, in this book, eleven innovative contributions are collected, all focusedon the reliability assessment of power electronic devices and related components