Dual-frequency single-inductor multiple-output (DF-SIMO) power converter topology for SoC applications

Modern mixed-signal SoCs integrate a large number of sub-systems in a single nanometer CMOS chip. Each sub-system typically requires its own independent and well-isolated power supply. However, to build these power supplies requires many large off-chip passive components, and thus the bill of material, the package pin count, and the printed circuit board area and complexity increase dramatically, leading to higher overall cost. Conventional (single-frequency) Single-Inductor Multiple-Output (SIMO) power converter topology can be employed to reduce the burden of off-chip inductors while producing a large number of outputs. However, this strategy requires even larger off-chip output capacitors than single-output converters due to time multiplexing between the multiple outputs, and thus many of them suffer from cross coupling issues that limit the isolation between the outputs. In this thesis, a Dual-Frequency SIMO (DF-SIMO) buck converter topology is proposed. Unlike conventional SIMO topologies, the DF-SIMO decouples the rate of power conversion at the input stage from the rate of power distribution at the output stage. Switching the input stage at low frequency (~2 MHz) simplifies its design in nanometer CMOS, especially with input voltages higher than 1.2 V, while switching the output stage at higher frequency enables faster output dynamic response, better cross-regulation, and smaller output capacitors without the efficiency and design complexity penalty of switching both the input and output stages at high frequency. Moreover, for output switching frequency higher than 100 MHz, the output capacitors can be small enough to be integrated on-chip. A 5-output 2-MHz/120-MHz design in 45-nm CMOS with 1.8-V input targeting low-power microcontrollers is presented as an application. The outputs vary from 0.6 to 1.6 V, with 4 outputs providing up to 15 mA and one output providing up to 50 mA. The design uses single 10-uH off-chip inductor, 2-nF on-chip capacitor for each 15-mA output and 4.5-nF for the 50-mA output. The peak efficiency is 73%, Dynamic Voltage Scaling (DVS) is 0.6 V/80 ns, and settling time is 30 ns for half-to-full load steps with no observable overshoot/undershoot or cross-coupling transients. The DF-SIMO topology enables realizing multiple efficient power supplies with faster dynamic response, better cross-regulation, and lower overall cost compared to conventional SIMO topologies

Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

Design methodology for reliable and energy efficient self-tuned on-chip voltage regulators

The energy-efficiency needs in computing systems, ranging from high performance processors to low-power devices is steadily on the rise, resulting in increasing popularity of on-chip voltage regulators (VR). The high-frequency and high bandwidth on-chip voltage regulators such as Inductive voltage regulators (IVR) and Digital Low Dropout regulators (DLDO) significantly enhance the energy-efficiency of a SoC by reducing supply noise and enabling faster voltage transitions. However, IVRs and DLDOs need to cope with the higher variability that exists in the deep nanometer digital nodes since they are fabricated on the same die as the digital core affecting performance of both the VR and digital core. Moreover, in most modern SoCs where multiple power domains are preferred, each VR needs to be designed and optimized for a target load demand which significantly increases the design time and time to market for VR assisted SoCs. This thesis investigates a performance-based auto-tuning algorithm utilizing performance of digital core to tune VRs against variations and improve performance of both VR and the core. We further propose a fully synthesizable VR architecture and an auto-generation tool flow that can be used to design and optimize a VR for given target specifications and auto-generate a GDS layout. This would reduce the design time drastically. And finally, a flexible precision IVR architecture is also explored to further improve transient performance and tolerance to process variations. The proposed IVR and DLDO designs with an AES core and auto-tuning circuits are prototyped in two testchips in 130nm CMOS process and one test chip in 65nm CMOS process. The measurements demonstrate improved performance of IVR and AES core due to performance-based auto-tuning. Moreover, the synthesizable architectures of IVR and DLDO implemented using auto-generation tool flow showed competitive performance with state of art full custom designs with orders of magnitude reduction in design time. Additional improvement in transient performance of IVR is also observed due to the flexible precision feedback loop design.Ph.D

Exploration and Design of High Performance Variation Tolerant On-Chip Interconnects

Siirretty Doriast

Techniques for Frequency Synthesizer-Based Transmitters.

Internet of Things (IoT) devices are poised to be the largest market for the semiconductor industry. At the heart of a wireless IoT module is the radio and integral to any radio is the transmitter. Transmitters with low power consumption and small area are crucial to the ubiquity of IoT devices. The fairly simple modulation schemes used in IoT systems makes frequency synthesizer-based (also known as PLL-based) transmitters an ideal candidate for these devices. Because of the reduced number of analog blocks and the simple architecture, PLL-based transmitters lend themselves nicely to the highly integrated, low voltage nanometer digital CMOS processes of today. This thesis outlines techniques that not only reduce the power consumption and area, but also significantly improve the performance of PLL-based transmitters.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/113385/1/mammad_1.pd

ULTRA ENERGY-EFFICIENT SUB-/NEAR-THRESHOLD COMPUTING: PLATFORM AND METHODOLOGY

Ph.DDOCTOR OF PHILOSOPH