Physics-Based Electromigration Modeling and Analysis and Optimization

Long-term reliability is a major concern in modern VLSI design. Literature has shown that reliability gets worse as technology advances. It is expected that the future VLSI systems would have shorter reliability-induced lifetime comparing with previous generations. Being one of the most serious reliability effects, electromigration (EM) is a physical phenomenon of the migration of metal atoms due to the momentum exchange between atoms and the conducting electrons. It can cause wire resistance change or open circuit and result in functional failure of the circuit. Power-ground networks are the most vulnerable part to EM effect among all the interconnect wires since the current flow on this part is the largest on the chip. With new generation oftechnology node and aggressive design strategies, more accurate and efficient EM models are required. However, traditional EM approaches are very conservative and cannot meet current aggressive design strategies. Besides circuit level, EM also need to be thoroughly studied in system level due to limited power and temperature budgets among cores on chip. This research focuses on developing physical level EM model for VLSI circuits and system level EM optimization for multi-core systems in order to overcome the aforementioned problems. Specifically, for physical level, we develop two EM immortality check methods and a power grid EM check method. Firstly, a voltage based EM immortality analysis has been developed. Immortality condition in nucleation phase can be determined fast and accurately for multi-segment interconnect wires. Secondly, a saturation volume based incubation phase immortality check method has been proposed. This method can further reduce the redundancy in VLSI circuit design by immortality check in multiphase. Furthermore, both immortality check methods are integrated into a new power grid EM check methodology (EMspice) as filter for EM analysis. These filters can accelerate the simulation by filtering out immortal trees so that we only need to do simulation on fewer trees that are mortal. Coupled EM simulation considering both hydrostatic stress and electronic current/voltage in the power grid network will be applied to these mortal trees. This tool can work seamlessly with commercial synthesis flow. Besides physical level reliability models, system level reliability optimization is also discussed in this research. A deep reinforcement learning based EM optimization has been proposed for multi-core system. Both long term reliability effect (hard error) and transient soft error are considered. Energy can be optimized with all the reliability and other constraints fast and accurately compared to existing reliability management techniques. Last but not least, a scheduling based reliability optimization method for multi-core systems has been proposed. NBTI, HCI and EM are considered jointly. Lifetime of the system can be improved significantly compared to traditional methods which mainly focus on utilization

End-of-Life and Constant Rate Reliability Modeling for Semiconductor Packages Using Knowledge-Based Test Approaches

End-of-life and constant rate reliability modeling for semiconductor packages are the focuses of this dissertation. Knowledge-based testing approaches are applied and the test-to-failure approach is approved to be a reliable approach. First of all, the end-of-life AF models for solder joint reliability are studied. The research results show using one universal AF model for all packages is flawed approach. An assessment matrix is generated to guide the application of AF models. The AF models chosen should be either assessed based on available data or validated through accelerated stress tests. A common model can be applied if the packages have similar structures and materials. The studies show that different AF models will be required for SnPb solder joints and SAC lead-free solder joints. Second, solder bumps under power cycling conditions are found to follow constant rate reliability models due to variations of the operating conditions. Case studies demonstrate that a constant rate reliability model is appropriate to describe non solder joint related semiconductor package failures as well. Third, the dissertation describes the rate models using Chi-square approach cannot correlate well with the expected failure mechanisms in field applications. The estimation of the upper bound using a Chi-square value from zero failure is flawed. The dissertation emphasizes that the failure data is required for the failure rate estimation. A simple but tighter approach is proposed and provides much tighter bounds in comparison of other approaches available. Last, the reliability of solder bumps in flip chip packages under power cycling conditions is studied. The bump materials and underfill materials will significantly influence the reliability of the solder bumps. A set of comparable bump materials and the underfill materials will dramatically improve the end-of-life solder bumps under power cycling loads, and bump materials are one of the most significant factors. Comparing to the field failure data obtained, the end-of-life model does not predict the failures in the field, which is more close to an approximately constant failure rate. In addition, the studies find an improper underfill material could change the failure location from solder bump cracking to ILD cracking or BGA solder joint failures

Algorithms and methodologies for interconnect reliability analysis of integrated circuits

The phenomenal progress of computing devices has been largely made possible by the sustained efforts of semiconductor industry in innovating techniques for extremely large-scale integration. Indeed, gigantically integrated circuits today contain multi-billion interconnects which enable the transistors to talk to each other -all in a space of few mm2. Such aggressively downscaled components (transistors and interconnects) silently suffer from increasing electric fields and impurities/defects during manufacturing. Compounded by the Gigahertz switching, the challenges of reliability and design integrity remains very much alive for chip designers, with Electro migration (EM) being the foremost interconnect reliability challenge. Traditionally, EM containment revolves around EM guidelines, generated at single-component level, whose non-compliance means that the component fails. Failure usually refers to deformation due to EM -manifested in form of resistance increase, which is unacceptable from circuit performance point of view. Subsequent aspects deal with correct-by-construct design of the chip followed by the signoff-verification of EM reliability. Interestingly, chip designs today have reached a dilemma point of reduced margin between the actual and reliably allowed current densities, versus, comparatively scarce system-failures. Consequently, this research is focused on improved algorithms and methodologies for interconnect reliability analysis enabling accurate and design-specific interpretation of EM events. In the first part, we present a new methodology for logic-IP (cell) internal EM verification: an inadequately attended area in the literature. Our SPICE-correlated model helps in evaluating the cell lifetime under any arbitrary reliability speciation, without generating additional data - unlike the traditional approaches. The model is apt for today's fab less eco-system, where there is a) increasing reuse of standard cells optimized for one market condition to another (e.g., wireless to automotive), as well as b) increasing 3rd party content on the chip requiring a rigorous sign-off. We present results from a 28nm production setup, demonstrating significant violations relaxation and flexibility to allow runtime level reliability retargeting. Subsequently, we focus on an important aspect of connecting the individual component-level failures to that of the system failure. We note that existing EM methodologies are based on serial reliability assumption, which deems the entire system to fail as soon as the first component in the system fails. With a highly redundant circuit topology, that of a clock grid, in perspective, we present algorithms for EM assessment, which allow us to incorporate and quantify the benefit from system redundancies. With the skew metric of clock-grid as a failure criterion, we demonstrate that unless such incorporations are done, chip lifetimes are underestimated by over 2x. This component-to-system reliability bridge is further extended through an extreme order statistics based approach, wherein, we demonstrate that system failures can be approximated by an asymptotic kth-component failure model, otherwise requiring costly Monte Carlo simulations. Using such approach, we can efficiently predict a system-criterion based time to failure within existing EDA frameworks. The last part of the research is related to incorporating the impact of global/local process variation on current densities as well as fundamental physical factors on EM. Through Hermite polynomial chaos based approach, we arrive at novel variations-aware current density models, which demonstrate significant margins (> 30 %) in EM lifetime when compared with the traditional worst case approach. The above research problems have been motivated by the decade-long work experience of the author dealing with reliability issues in industrial SoCs, first at Texas Instruments and later at Qualcomm.L'espectacular progrés dels dispositius de càlcul ha estat possible en gran part als esforços de la indústria dels semiconductors en proposar tècniques innovadores per circuits d'una alta escala d'integració. Els circuits integrats contenen milers de milions d'interconnexions que permeten connectar transistors dins d'un espai de pocs mm2. Tots aquests components estan afectats per camps elèctrics, impureses i defectes durant la seva fabricació. Degut a l’activitat a nivell de Gigahertzs, la fiabilitat i integritat són reptes importants pels dissenyadors de xips, on la Electromigració (EM) és un dels problemes més importants. Tradicionalment, el control de la EM ha girat entorn a directrius a nivell de component. L'incompliment d’alguna de les directrius implica un alt risc de falla. Per falla s'entén la degradació deguda a la EM, que es manifesta en forma d'augment de la resistència, la qual cosa és inacceptable des del punt de vista del rendiment del circuit. Altres aspectes tenen a veure amb la correcta construcció del xip i la verificació de fiabilitat abans d’enviar el xip a fabricar. Avui en dia, el disseny s’enfronta a dilemes importants a l’hora de definir els marges de fiabilitat dels xips. És un compromís entre eficiència i fiabilitat. La recerca en aquesta tesi se centra en la proposta d’algorismes i metodologies per a l'anàlisi de la fiabilitat d'interconnexió que permeten una interpretació precisa i específica d'esdeveniments d'EM. A la primera part de la tesi es presenta una nova metodologia pel disseny correcte-per-construcció i verificació d’EM a l’interior de les cel·les lògiques. Es presenta un model SPICE correlat que ajuda a avaluar el temps de vida de les cel·les segons qualsevol especificació arbitrària de fiabilitat i sense generar cap dada addicional, al contrari del que fan altres tècniques. El model és apte per l'ecosistema d'empreses de disseny quan hi ha a) una reutilització creixent de cel·les estàndard optimitzades per unes condicions de mercat i utilitzades en un altre (p.ex. de wireless a automoció), o b) la utilització de components del xip provinents de terceres parts i que necessiten una verificació rigorosa. Es presenten resultats en una tecnologia de 28nm, demostrant relaxacions significatives de les regles de fiabilitat i flexibilitat per permetre la reavaluació de la fiabilitat en temps d'execució. A continuació, el treball tracta un aspecte important sobre la relació entre les falles dels components i les falles del sistema. S'observa que les tècniques existents es basen en la suposició de fiabilitat en sèrie, que porta el sistema a fallar tant aviat hi ha un component que falla. Pensant en topologies redundants, com la de les graelles de rellotge, es proposen algorismes per l'anàlisi d'EM que permeten quantificar els beneficis de la redundància en el sistema. Utilitzant com a mètrica l’esbiaixi del senyal de rellotge, es demostra que la vida dels xips pot arribar a ser infravalorada per un factor de 2x. Aquest pont de fiabilitat entre component i sistema es perfecciona a través d'una tècnica basada en estadístics d'ordre extrem on es demostra que les falles poden ser aproximades amb un model asimptòtic de fallada de l'ièssim component, evitant així simulacions de Monte Carlo costoses. Amb aquesta tècnica, es pot predir eficientment el temps de fallada a nivell de sistema utilitzant eines industrials. La darrera part de la recerca està relacionada amb avaluar l'impacte de les variacions de procés en les densitats de corrent i factors físics de la EM. Mitjançant una tècnica basada en polinomis d'Hermite s'han obtingut uns nous models de densitat de corrent que mostren millores importants (>30%) en l'estimació de la vida del sistema comprades amb les tècniques basades en el cas pitjor. La recerca d'aquesta tesi ha estat motivada pel treball de l'autor durant més d'una dècada tractant temes de fiabilitat en sistemes, primer a Texas Instruments i després a Qualcomm.Postprint (published version

Linear stability analysis of transient electrodeposition in charged porous media: suppression of dendritic growth by surface conduction

We study the linear stability of transient electrodeposition in a charged random porous medium, whose pore surface charges can be of any sign, flanked by a pair of planar metal electrodes. Discretization of the linear stability problem results in a generalized eigenvalue problem for the dispersion relation that is solved numerically, which agrees well with the analytical approximation obtained from a boundary layer analysis valid at high wavenumbers. Under galvanostatic conditions in which an overlimiting current is applied, in the classical case of zero surface charges, the electric field at the cathode diverges at Sand's time due to electrolyte depletion. The same phenomenon happens for positive charges but earlier than Sand's time. However, negative charges allow the system to sustain an overlimiting current via surface conduction past Sand's time, keeping the electric field bounded. Therefore, at Sand's time, negative charges greatly reduce surface instabilities and suppress dendritic growth, while zero and positive charges magnify them. We compare theoretical predictions for overall surface stabilization with published experimental data for copper electrodeposition in cellulose nitrate membranes and demonstrate good agreement between theory and experiment. We also apply the stability analysis to how crystal grain size varies with duty cycle during pulse electroplating.Comment: 55 pages, 12 figures, 2 table

A fast and retargetable framework for logic-IP-internal electromigration assessment comprehending advanced waveform effects

A new methodology for system-on-chip-level logic-IP-internal electromigration verification is presented in this paper, which significantly improves accuracy by comprehending the impact of the parasitic RC loading and voltage-dependent pin capacitance in the library model. It additionally provides an on-the-fly retargeting capability for reliability constraints by allowing arbitrary specifications of lifetimes, temperatures, voltages, and failure rates, as well as interoperability of the IPs across foundries. The characterization part of the methodology is expedited through the intelligent IP-response modeling. The ultimate benefit of the proposed approach is demonstrated on a 28-nm design by providing an on-the-fly specification of retargeted reliability constraints. The results show a high correlation with SPICE and were obtained with an order of magnitude reduction in the verification runtime.Peer ReviewedPostprint (author's final draft

PCB Quality Metrics that Drive Reliability (PD 18)

Risk based technology infusion is a deliberate and systematic process which defines the analysis and communication methodology by which new technology is applied and integrated into existing and new designs, identifies technology development needs based on trends analysis and facilitates the identification of shortfalls against performance objectives. This presentation at IPC Works Asia Aerospace 2019 Events provides the audience a snapshot of quality variations in printed wiring board quality, as assessed, using experiences in processing and risk analysis of PWB structural integrity coupons. The presentation will focus on printed wiring board quality metrics used, the relative type and number of non-conformances observed and trend analysis using statistical methods. Trend analysis shows the top five non-conformances observed across PWB suppliers, the root cause(s) behind these non-conformance and suggestions of mitigation plans. The trends will then be matched with the current state of the PWB supplier base and its challenges and opportunities. The presentation further discusses the risk based SMA approaches and methods being applied at GSFC for evaluating candidate printed wiring board technologies which promote the adoption of higher throughput and faster processing technology for GSFC missions

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Thermal Management for Dependable On-Chip Systems

This thesis addresses the dependability issues in on-chip systems from a thermal perspective. This includes an explanation and analysis of models to show the relationship between dependability and tempature. Additionally, multiple novel methods for on-chip thermal management are introduced aiming to optimize thermal properties. Analysis of the methods is done through simulation and through infrared thermal camera measurements