Energy Aware Design and Analysis for Synchronous and Asynchronous Circuits

Power dissipation has become a major concern for IC designers. Various low power design techniques have been developed for synchronous circuits. Asynchronous circuits, however. have gained more interests recently due to their benefits in lower noise, easy timing control, etc. But few publications on energy reduction techniques for asynchronous logic are available. Power awareness indicates the ability of the system power to scale with changing conditions and quality requirements. Scalability is an important figure-of-merit since it allows the end user to implement operational policy. just like the user of mobile multimedia equipment needs to select between better quality and longer battery operation time. This dissertation discusses power/energy optimization and performs analysis on both synchronous and asynchronous logic. The major contributions of this dissertation include: 1 ) A 2-Dimensional Pipeline Gating technique for synchronous pipelined circuits to improve their power awareness has been proposed. This technique gates the corresponding clock lines connected to registers in both vertical direction (the data flow direction) and horizontal direction (registers within each pipeline stage) based on current input precision. 2) Two energy reduction techniques, Signal Bypassing & Insertion and Zero Insertion. have been developed for NCL circuits. Both techniques use Nulls to replace redundant Data 0\u27s based on current input precision in order to reduce the switching activity while Signal Bypassing & Insertion is for non-pipelined NCI, circuits and Zero Insertion is for pipelined counterparts. A dynamic active-bit detection scheme is also developed as an expansion. 3) Two energy estimation techniques, Equivalent Inverter Modeling based on Input Mapping in transistor-level and Switching Activity Modeling in gate-level, have been proposed. The former one is for CMOS gates with feedbacks and the latter one is for NCL circuits

On the design and characterization of femtoampere current-mode circuits

In this paper, we show and validate a reliable circuit design technique based on source voltage shifting for current-mode signal processing down to femtoamperes. The technique involves specific-current extractors and logarithmic current splitters for obtaining on-chip subpicoampere currents. It also uses a special on-chip sawtooth oscillator to monitor and measure currents down to a few femtoamperes. This way, subpicoampere currents are characterized without driving them off chip and requiring expensive instrumentation with complicated low leakage setups. A special current mirror is also introduced for reliably replicating such low currents. As an example, a simple log-domain first-order low-pass filter is Implemented that uses a 100-fF capacitor and a 3.5-fA bias current to achieve a cutoff frequency of 0.5 Hz. A technique for characterizing noise at these currents is also described and verified. Finally, transistor mismatch measurements are provided and discussed. Experimental measurements are shown throughout the paper, obtained from prototypes fabricated in the AMS 0.35-μm three-metal two-poly standard CMOS process.Ministerio de Ciencia y Tecnología TIC-1999-0446-C02-02, FIT-070000-2001-0859, TIC-2000-0406-P4-05, TIC-2002-10878-EEuropean Union IST-2001-3412

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Oscillator Phase Noise and Small-Scale Channel Fading in Higher Frequency Bands

This paper investigates the effect of oscillator phase noise and channel variations due to fading on the performance of communication systems at frequency bands higher than 10GHz. Phase noise and channel models are reviewed and technology-dependent bounds on the phase noise quality of radio oscillators are presented. Our study shows that, in general, both channel variations and phase noise can have severe effects on the system performance at high frequencies. Importantly, their relative severity depends on the application scenario and system parameters such as center frequency and bandwidth. Channel variations are seen to be more severe than phase noise when the relative velocity between the transmitter and receiver is high. On the other hand, performance degradation due to phase noise can be more severe when the center frequency is increased and the bandwidth is kept a constant, or when oscillators based on low power CMOS technology are used, as opposed to high power GaN HEMT based oscillators.Comment: IEEE Global Telecommun. Conf. (GLOBECOM), Austin, TX, Dec. 201

Phase Synchronization Operator for On-Chip Brain Functional Connectivity Computation

This paper presents an integer-based digital processor for the calculation of phase synchronization between two neural signals. It is based on the measurement of time periods between two consecutive minima. The simplicity of the approach allows for the use of elementary digital blocks, such as registers, counters, and adders. The processor, fabricated in a 0.18- μ m CMOS process, only occupies 0.05 mm 2 and consumes 15 nW from a 0.5 V supply voltage at a signal input rate of 1024 S/s. These low-area and low-power features make the proposed processor a valuable computing element in closed-loop neural prosthesis for the treatment of neural disorders, such as epilepsy, or for assessing the patterns of correlated activity in neural assemblies through the evaluation of functional connectivity maps.Ministerio de Economía y Competitividad TEC2016-80923-POffice of Naval Research (USA) N00014-19-1-215

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model