44 research outputs found

    Modeling, Optimization and Power Efficiency Comparison of High-speed Inter-chip Electrical and Optical Interconnect Architectures in Nanometer CMOS Technologies

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    Inter-chip input-output (I/O) communication bandwidth demand, which rapidly scaled with integrated circuit scaling, has leveraged equalization techniques to operate reliably on band-limited channels at additional power and area complexity. High-bandwidth inter-chip optical interconnect architectures have the potential to address this increasing I/O bandwidth. Considering future tera-scale systems, power dissipation of the high-speed I/O link becomes a significant concern. This work presents a design flow for the power optimization and comparison of high-speed electrical and optical links at a given data rate and channel type in 90 nm and 45 nm CMOS technologies. The electrical I/O design framework combines statistical link analysis techniques, which are used to determine the link margins at a given bit-error rate (BER), with circuit power estimates based on normalized transistor parameters extracted with a constant current density methodology to predict the power-optimum equalization architecture, circuit style, and transmit swing at a given data rate and process node for three different channels. The transmitter output swing is scaled to operate the link at optimal power efficiency. Under consideration for optical links are a near-term architecture consisting of discrete vertical-cavity surface-emitting lasers (VCSEL) with p-i-n photodetectors (PD) and three long-term integrated photonic architectures that use waveguide metal-semiconductor-metal (MSM) photodetectors and either electro-absorption modulator (EAM), ring resonator modulator (RRM), or Mach-Zehnder modulator (MZM) sources. The normalized transistor parameters are applied to jointly optimize the transmitter and receiver circuitry to minimize total optical link power dissipation for a specified data rate and process technology at a given BER. Analysis results shows that low loss channel characteristics and minimal circuit complexity, together with scaling of transmitter output swing, allows electrical links to achieve excellent power efficiency at high data rates. While the high-loss channel is primarily limited by severe frequency dependent losses to 12 Gb/s, the critical timing path of the first tap of the decision feedback equalizer (DFE) limits the operation of low-loss channels above 20 Gb/s. Among the optical links, the VCSEL-based link is limited by its bandwidth and maximum power levels to a data rate of 24 Gb/s whereas EAM and RRM are both attractive integrated photonic technologies capable of scaling data rates past 30 Gb/s achieving excellent power efficiency in the 45 nm node and are primarily limited by coupling and device insertion losses. While MZM offers robust operation due to its wide optical bandwidth, significant improvements in power efficiency must be achieved to become applicable for high density applications

    A 30 Gb/s CMOS driver integrated with silicon photonics MZM

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    A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW

    Design of Optical Interconnect Transceiver Circuits and Network-on-chip Architectures for Inter- and Intra-chip Communication

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    The rapid expansion in data communication due to the increased multimedia applications and cloud computing services necessitates improvements in optical transceiver circuitry power efficiency as these systems scale well past 10 Gb/s. In order to meet these requirements, a 26 GHz transimpedance amplifier (TIA) is presented in a 0.25-µm SiGe BiCMOS technology. It employs a transformer-based regulated cascode (RGC) input stage which provides passive negative-feedback gain that enhances the effective transconductance of the TIA’s input common-base transistor; reducing the input resistance and pro- viding considerable bandwidth extension without significant noise degradation or power consumption. The TIA achieves a 53 dBΩ single-ended transimpedance gain with a 26√ GHz bandwidth and 21.3 pA/H z average input-referred noise current spectral density. Total chip power including output buffering is 28.2 mW from a 2.5 V supply, with the core TIA consuming 8.2 mW, and the chip area including pads is 960 µm × 780 µm. With the advance of photonic devices, optical interconnects becomes a promising technology to replace the conventional electrical channels for the high-bandwidth and power efficient inter/intra-chip interconnect. Second, a silicon photonic transceiver is presented for a silicon ring resonator-based optical interconnect architecture in a 1V standard 65nm CMOS technology. The transmitter circuits incorporate high-swing drivers with non-linear pre-emphasis and automatic bias-based tuning for resonance wavelength stabilization. An optical forwarded-clock adaptive inverter-based transimpedance amplifier (TIA) receiver trades-off power for varying link budgets by employing an on-die eye monitor and scaling the TIA supply for the required sensitivity. At 5 GB/s operation, the ring modulator un- der 4Vpp driver achieves 12.7dB extinction ratio with 4.04mW power consumption, while a 0.28nm tuning range is obtained at 6.8µW/GHz efficiency with the bias-based tuning scheme implemented with the 2Vpp transmitter. When tested with a wire-bonded 150f- F p-i-n photodetector, the receiver achieves -12.7dBm sensitivity at a BER=10−15 and consumes 2.2mW at 8 GB/s. Third, a novel Nano-Photonic Network-on-Chip (NoC) architecture, called LumiNoC, is proposed for high performance and power-efficient interconnects for the chip-multi- processors (CMPs). A 64-node LumiNoC under synthetic traffic enjoys 50% less latency at low loads versus other reported photonic NoCs, and ∼25% less latency versus the electrical 2D mesh NoCs on realistic workloads. Under the same ideal throughput, LumiNoC achieves laser power reduction of 78%, and overall power reduction of 44% versus competing designs

    Optoelectronic devices and packaging for information photonics

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    This thesis studies optoelectronic devices and the integration of these components onto optoelectronic multi chip modules (OE-MCMs) using a combination of packaging techniques. For this project, (1×12) array photodetectors were developed using PIN diodes with a GaAs/AlGaAs strained layer structure. The devices had a pitch of 250μm, operated at a wavelength of 850nm. Optical characterisation experiments of two types of detector arrays (shoe and ring) were successfully performed. Overall, the shoe devices achieved more consistent results in comparison with ring diodes, i.e. lower dark current and series resistance values. A decision was made to choose the shoe design for implementation into the high speed systems demonstrator. The (1x12) VCSEL array devices were the optical sources used in my research. This was an identical array at 250μm pitch configuration used in order to match the photodetector array. These devices had a wavelength of 850nm. Optoelectronic testing of the VCSEL was successfully conducted, which provided good beam profile analysis and I-V-P measurements of the VCSEL array. This was then implemented into a simple demonstrator system, where eye diagrams examined the systems performance and characteristics of the full system and showed positive results. An explanation was given of the following optoelectronic bonding techniques: Wire bonding and flip chip bonding with its associated technologies, i.e. Solder, gold stud bump and ACF. Also, technologies, such as ultrasonic flip chip bonding and gold micro-post technology were looked into and discussed. Experimental work implementing these methods on packaging the optoelectronic devices was successfully conducted and described in detail. Packaging of the optoelectronic devices onto the OEMCM was successfully performed. Electrical tests were successfully carried out on the flip chip bonded VCSEL and Photodetector arrays. These results verified that the devices attached on the MCM achieved good electrical performance and reliable bonding. Finally, preliminary testing was conducted on the fully assembled OE-MCMs. The aim was to initially power up the mixed signal chip (VCSEL driver), and then observe the VCSEL output

    Architecting a One-to-many Traffic-Aware and Secure Millimeter-Wave Wireless Network-in-Package Interconnect for Multichip Systems

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    With the aggressive scaling of device geometries, the yield of complex Multi Core Single Chip(MCSC) systems with many cores will decrease due to the higher probability of manufacturing defects especially, in dies with a large area. Disintegration of large System-on-Chips(SoCs) into smaller chips called chiplets has shown to improve the yield and cost of complex systems. Therefore, platform-based computing modules such as embedded systems and micro-servers have already adopted Multi Core Multi Chip (MCMC) architectures overMCSC architectures. Due to the scaling of memory intensive parallel applications in such systems, data is more likely to be shared among various cores residing in different chips resulting in a significant increase in chip-to-chip traffic, especially one-to-many traffic. This one-to-many traffic is originated mainly to maintain cache-coherence between many cores residing in multiple chips. Besides, one-to-many traffics are also exploited by many parallel programming models, system-level synchronization mechanisms, and control signals. How-ever, state-of-the-art Network-on-Chip (NoC)-based wired interconnection architectures do not provide enough support as they handle such one-to-many traffic as multiple unicast trafficusing a multi-hop MCMC communication fabric. As a result, even a small portion of such one-to-many traffic can significantly reduce system performance as traditional NoC-basedinterconnect cannot mask the high latency and energy consumption caused by chip-to-chipwired I/Os. Moreover, with the increase in memory intensive applications and scaling of MCMC systems, traditional NoC-based wired interconnects fail to provide a scalable inter-connection solution required to support the increased cache-coherence and synchronization generated one-to-many traffic in future MCMC-based High-Performance Computing (HPC) nodes. Therefore, these computation and memory intensive MCMC systems need an energy-efficient, low latency, and scalable one-to-many (broadcast/multicast) traffic-aware interconnection infrastructure to ensure high-performance. Research in recent years has shown that Wireless Network-in-Package (WiNiP) architectures with CMOS compatible Millimeter-Wave (mm-wave) transceivers can provide a scalable, low latency, and energy-efficient interconnect solution for on and off-chip communication. In this dissertation, a one-to-many traffic-aware WiNiP interconnection architecture with a starvation-free hybrid Medium Access Control (MAC), an asymmetric topology, and a novel flow control has been proposed. The different components of the proposed architecture are individually one-to-many traffic-aware and as a system, they collaborate with each other to provide required support for one-to-many traffic communication in a MCMC environment. It has been shown that such interconnection architecture can reduce energy consumption and average packet latency by 46.96% and 47.08% respectively for MCMC systems. Despite providing performance enhancements, wireless channel, being an unguided medium, is vulnerable to various security attacks such as jamming induced Denial-of-Service (DoS), eavesdropping, and spoofing. Further, to minimize the time-to-market and design costs, modern SoCs often use Third Party IPs (3PIPs) from untrusted organizations. An adversary either at the foundry or at the 3PIP design house can introduce a malicious circuitry, to jeopardize an SoC. Such malicious circuitry is known as a Hardware Trojan (HT). An HTplanted in the WiNiP from a vulnerable design or manufacturing process can compromise a Wireless Interface (WI) to enable illegitimate transmission through the infected WI resulting in a potential DoS attack for other WIs in the MCMC system. Moreover, HTs can be used for various other malicious purposes, including battery exhaustion, functionality subversion, and information leakage. This information when leaked to a malicious external attackercan reveals important information regarding the application suites running on the system, thereby compromising the user profile. To address persistent jamming-based DoS attack in WiNiP, in this dissertation, a secure WiNiP interconnection architecture for MCMC systems has been proposed that re-uses the one-to-many traffic-aware MAC and existing Design for Testability (DFT) hardware along with Machine Learning (ML) approach. Furthermore, a novel Simulated Annealing (SA)-based routing obfuscation mechanism was also proposed toprotect against an HT-assisted novel traffic analysis attack. Simulation results show that,the ML classifiers can achieve an accuracy of 99.87% for DoS attack detection while SA-basedrouting obfuscation could reduce application detection accuracy to only 15% for HT-assistedtraffic analysis attack and hence, secure the WiNiP fabric from age-old and emerging attacks

    Materials for high-density electronic packaging and interconnection

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    Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production

    Compact on-chip optical interconnects on silicon by heterogeneous integration of III-V microsources and detectors

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