MorphIC: A 65-nm 738k-Synapse/mm2^2 Quad-Core Binary-Weight Digital Neuromorphic Processor with Stochastic Spike-Driven Online Learning

Recent trends in the field of neural network accelerators investigate weight quantization as a means to increase the resource- and power-efficiency of hardware devices. As full on-chip weight storage is necessary to avoid the high energy cost of off-chip memory accesses, memory reduction requirements for weight storage pushed toward the use of binary weights, which were demonstrated to have a limited accuracy reduction on many applications when quantization-aware training techniques are used. In parallel, spiking neural network (SNN) architectures are explored to further reduce power when processing sparse event-based data streams, while on-chip spike-based online learning appears as a key feature for applications constrained in power and resources during the training phase. However, designing power- and area-efficient spiking neural networks still requires the development of specific techniques in order to leverage on-chip online learning on binary weights without compromising the synapse density. In this work, we demonstrate MorphIC, a quad-core binary-weight digital neuromorphic processor embedding a stochastic version of the spike-driven synaptic plasticity (S-SDSP) learning rule and a hierarchical routing fabric for large-scale chip interconnection. The MorphIC SNN processor embeds a total of 2k leaky integrate-and-fire (LIF) neurons and more than two million plastic synapses for an active silicon area of 2.86mm$^2$ in 65nm CMOS, achieving a high density of 738k synapses/mm$^2$. MorphIC demonstrates an order-of-magnitude improvement in the area-accuracy tradeoff on the MNIST classification task compared to previously-proposed SNNs, while having no penalty in the energy-accuracy tradeoff.Comment: This document is the paper as accepted for publication in the IEEE Transactions on Biomedical Circuits and Systems journal (2019), the fully-edited paper is available at https://ieeexplore.ieee.org/document/876400

Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets

OPTIMAL AREA AND PERFORMANCE MAPPING OF K-LUT BASED FPGAS

FPGA circuits are increasingly used in many fields: for rapid prototyping of new products (including fast ASIC implementation), for logic emulation, for producing a small number of a device, or if a device should be reconfigurable in use (reconfigurable computing). Determining if an arbitrary, given wide, function can be implemented by a programmable logic block, unfortunately, it is generally, a very difficult problem. This problem is called the Boolean matching problem. This paper introduces a new implemented algorithm able to map, both for area and performance, combinational networks using k-LUT based FPGAs.k-LUT based FPGAs, combinational circuits, performance-driven mapping.

Roadmap on semiconductor-cell biointerfaces.

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world

On evolution of CMOS image sensors

CMOS Image Sensors have become the principal technology in majority of digital cameras. They started replacing the film and Charge Coupled Devices in the last decade with the promise of lower cost, lower power requirement, higher integration and the potential of focal plane processing. However, the principal factor behind their success has been the ability to utilise the shrinkage in CMOS technology to make smaller pixels, and thereby have more resolution without increasing the cost. With the market of image sensors exploding courtesy their inte- gration with communication and computation devices, technology developers improved the CMOS processes to have better optical performance. Nevertheless, the promises of focal plane processing as well as on-chip integration have not been fulfilled. The market is still being pushed by the desire of having higher number of pixels and better image quality, however, differentiation is being difficult for any image sensor manufacturer. In the paper, we will explore potential disruptive growth directions for CMOS Image sensors and ways to achieve the same

Compact Millimeter-Wave Bandpass Filters Using Quasi-Lumped Elements in 0.13-um (Bi)-CMOS Technology for 5G Wireless Systems

© 2019 IEEE.A design methodology for a compact millimeter-wave on-chip bandpass filter (BPF) is presented in this paper. Unlike the previously published works in the literature, the presented method is based on quasi-lumped elements, which consists of a resonator with enhanced self-coupling and metal-insulator-metal capacitors. Thus, this approach provides inherently compact designs comparing with the conventional distributed elements-based ones. To fully understand the insight of the approach, simplified LC-equivalent circuit models are developed. To further demonstrate the feasibility of using this approach in practice, the resonator and two compact BPFs are designed using the presented models. All three designs are fabricated in a standard 0.13- \mu \text{m} (Bi)-CMOS technology. The measured results show that the resonator can generate a notch at 47 GHz with the attenuation better than 28 dB due to the enhanced self-coupling. The chip size, excluding the pads, is only 0.096 \times 0.294 mm 2. In addition, using the resonator for BPF designs, the first BPF has one transmission zero at 58 GHz with a peak attenuation of 23 dB. The center frequency of this filter is 27 GHz with an insertion loss of 2.5 dB, while the return loss is better than 10 dB from 26 to 31 GHz. The second BPF has two transmission zeros, and a minimum insertion loss of 3.5 dB is found at 29 GHz, while the return loss is better than 10 dB from 26 GHz to 34 GHz. Also, more than 20-dB stopband attenuation is achieved from dc to 20.5 GHz and from 48 to 67 GHz. The chip sizes of these two BPFs, excluding the pads, are only 0.076\times 0.296 mm 2 and 0.096\times 0.296 mm 2, respectively.Peer reviewe