Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.Comment: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title change

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Doped Metal Oxide High-K Gate Dielectric for Nonvolatile Memory and Light Emitting Applications

The zirconium-doped hafnium oxide (ZrHfO) high-k thin film has excellent gate dielectric properties, such as a higher crystallization temperature, a lower defect density, and a larger effective k value. As a promising high-k material, ZrHfO has been utilized for both nonvolatile memory (NVM) and light emitting applications. Replacing the polycrystalline Si floating gate, the discrete nanocrystals embedded ZrHfO gate dielectric can achieve promising NVM performance. On the other hand, warm white light can be emitted from the thermal excitation of nano-resistors form from the dielectric breakdown of the ZrHfO Metal-Oxide-Semiconductor (MOS) capacitor. This novel solid state incandescent light emitting device (SSI-LED) unveils a new concept for the lighting device evolution. Nanocrystalline cadmium sulfide (nc-CdS) embedded ZrHfO high-k NVMs have been fabricated to reduce the frequency dispersion problem caused by defects at the nanocrystal/dielectric interface. The nc-CdS embedded device can retain about 53% of originally trapped holes for 10 years and exhibit outstanding memory function at low operation voltage. The study on the nc-CdSe embedded ZrHfO NVMs shows that the high temperature enhances the hole trapping but decreases the electron trapping. Based on the different temperature dependences, the stored electrons release faster than stored holes. The raised temperature accelerates the dielectric breakdown process by increasing defect densities and defect effective conduction radii. The post deposition annealing (PDA) atmosphere is critical to the electrical and light emission characteristics of ZrHfO SSI-LEDs. It affects the dielectric breakdown, light emission intensity and efficiency by changing compositions of the high-k stack and the nano-resistor. The electrical properties, i.e., effective resistances and Schottky barrier heights of nano-resistors have been estimated. The nano-resistor behaves neither like a conductor nor like a semiconductor. Moreover, the barrier height inhomogeneity is observed due to the random and complicated nano-resistor formation. The embedding method and the heavily doped p-Si substrate have been employed to enhance the light emission from ZrHfO SSI-LEDs. Lastly, extensive applications of this novel nano-resistor device for on-chip optical interconnects and as diode-like anti-fuses have been discussed