13 research outputs found

    Design and Implementation of Low Power SRAM Using Highly Effective Lever Shifters

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    The explosive growth of battery-operated devices has made low-power design a priority in recent years. In high-performance Systems-on-Chip, leakage power consumption has become comparable to the dynamic component, and its relevance increases as technology scales. These trends are even more evident for SRAM memory devices since they are a dominant source of standby power consumption in low-power application processors. The on-die SRAM power consumption is particularly important for increasingly pervasive mobile and handheld applications where battery life is a key design and technology attribute. In the SRAM-memory design, SRAM cells also comprise the most significant portion of the total chip. Moreover, the increasing number of transistors in the SRAM memories and the MOSs\u27 increasing leakage current in the scaled technologies have turned the SRAM unit into a power-hungry block for both dynamic and static viewpoints. Although the scaling of the supply voltage enables low-power consumption, the SRAM cells\u27 data stability becomes a major concern. Thus, the reduction of SRAM leakage power has become a critical research concern. To address the leakage power consumption in high-performance cache memories, a stream of novel integrated circuit and architectural level techniques are proposed by researchers including leakage-current management techniques, cell array leakage reduction techniques, bitline leakage reduction techniques, and leakage current compensation techniques. The main goal of this work was to improve the cell array leakage reduction techniques in order to minimize the leakage power for SRAM memory design in low-power applications. This study performs the body biasing application to reduce leakage current as well. To adjust the NMOSs\u27 threshold voltage and consequently leakage current, a negative DC voltage could be applied to their body terminal as a second gate. As a result, in order to generate a negative DC voltage, this study proposes a negative voltage reference that includes a trimming circuit and a negative level shifter. These enhancements are employed to a 10kb SRAM memory operating at 0.3V in a 65nm CMOS process

    39th Aerospace Mechanisms Symposium

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    The Aerospace Mechanisms Symposium (AMS) provides a unique forum for those active in the design, production, and use of aerospace mechanisms. A major focus is the reporting of problems and solutions associated with the development and flight certification of new mechanisms. Organized by the Mechanisms Education Association, NASA Marshall Space Flight Center (MSFC) and Lockheed Martin Space Systems Company (LMSSC) share the responsibility for hosting the AMS. Now in its 39th symposium, the AMS continues to be well attended, attracting participants from both the United States and abroad. The 39th AMS was held in Huntsville, Alabama, May 7-9, 2008. During these 3 days, 34 papers were presented. Topics included gimbals and positioning mechanisms, tribology, actuators, deployment mechanisms, release mechanisms, and sensors. Hardware displays during the supplier exhibit gave attendees an opportunity to meet with developers of current and future mechanism components

    Feasibility study for a numerical aerodynamic simulation facility. Volume 1

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    A Numerical Aerodynamic Simulation Facility (NASF) was designed for the simulation of fluid flow around three-dimensional bodies, both in wind tunnel environments and in free space. The application of numerical simulation to this field of endeavor promised to yield economies in aerodynamic and aircraft body designs. A model for a NASF/FMP (Flow Model Processor) ensemble using a possible approach to meeting NASF goals is presented. The computer hardware and software are presented, along with the entire design and performance analysis and evaluation

    Predicting power scalability in a reconfigurable platform

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    This thesis focuses on the evolution of digital hardware systems. A reconfigurable platform is proposed and analysed based on thin-body, fully-depleted silicon-on-insulator Schottky-barrier transistors with metal gates and silicide source/drain (TBFDSBSOI). These offer the potential for simplified processing that will allow them to reach ultimate nanoscale gate dimensions. Technology CAD was used to show that the threshold voltage in TBFDSBSOI devices will be controllable by gate potentials that scale down with the channel dimensions while remaining within appropriate gate reliability limits. SPICE simulations determined that the magnitude of the threshold shift predicted by TCAD software would be sufficient to control the logic configuration of a simple, regular array of these TBFDSBSOI transistors as well as to constrain its overall subthreshold power growth. Using these devices, a reconfigurable platform is proposed based on a regular 6-input, 6-output NOR LUT block in which the logic and configuration functions of the array are mapped onto separate gates of the double-gate device. A new analytic model of the relationship between power (P), area (A) and performance (T) has been developed based on a simple VLSI complexity metric of the form ATσ = constant. As σ defines the performance “return” gained as a result of an increase in area, it also represents a bound on the architectural options available in power-scalable digital systems. This analytic model was used to determine that simple computing functions mapped to the reconfigurable platform will exhibit continuous power-area-performance scaling behavior. A number of simple arithmetic circuits were mapped to the array and their delay and subthreshold leakage analysed over a representative range of supply and threshold voltages, thus determining a worse-case range for the device/circuit-level parameters of the model. Finally, an architectural simulation was built in VHDL-AMS. The frequency scaling described by σ, combined with the device/circuit-level parameters predicts the overall power and performance scaling of parallel architectures mapped to the array

    Factors Influencing Customer Satisfaction towards E-shopping in Malaysia

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    Online shopping or e-shopping has changed the world of business and quite a few people have decided to work with these features. What their primary concerns precisely and the responses from the globalisation are the competency of incorporation while doing their businesses. E-shopping has also increased substantially in Malaysia in recent years. The rapid increase in the e-commerce industry in Malaysia has created the demand to emphasize on how to increase customer satisfaction while operating in the e-retailing environment. It is very important that customers are satisfied with the website, or else, they would not return. Therefore, a crucial fact to look into is that companies must ensure that their customers are satisfied with their purchases that are really essential from the ecommerce’s point of view. With is in mind, this study aimed at investigating customer satisfaction towards e-shopping in Malaysia. A total of 400 questionnaires were distributed among students randomly selected from various public and private universities located within Klang valley area. Total 369 questionnaires were returned, out of which 341 questionnaires were found usable for further analysis. Finally, SEM was employed to test the hypotheses. This study found that customer satisfaction towards e-shopping in Malaysia is to a great extent influenced by ease of use, trust, design of the website, online security and e-service quality. Finally, recommendations and future study direction is provided. Keywords: E-shopping, Customer satisfaction, Trust, Online security, E-service quality, Malaysia

    Queensland University of Technology: Handbook 1994

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    The Queensland University of Technology handbook gives an outline of the faculties and subject offerings available that were offered by QUT
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