Synthesis of Circumpyrene by Alkyne Benzannulation of Brominated Dibenzo[hi,st]ovalene

A transition-metal catalyzed alkyne benzannulation allowed an unprecedented synthesis of circumpyrene, starting from 3,11-dibromo-6,14-dimesityldibenzo[hi,st]ovalene (DBOV). The circumpyrene was characterized by a combination of NMR, mass spectrometry, and single-crystal X-ray diffraction analysis, revealing its multizigzag-edged structure. Two newly introduced C═C bonds in circumpyrene strongly perturbed the electronic structures of DBOV, as evidenced by increased optical and electrochemical energy gaps. This is in good agreement with an increased number of Clar’s sextets as well as a decreased number of π-electrons in the conjugation pathway of circumpyrene, according to anisotropy of the induced current density (ACID) calculations. The present approach opens a new avenue to multizigzag-edged nanographenes and offers insights into their (opto)electronic properties

Graphite aerogels and the formation mechanism of unusual micron-sized rod and helical structures

Pyrolysis at 800 ºC under argon has shown that polyimide (PI), polyacrylonitrile (PAN), polydicyclopentadiene (DCPD) and polybenzoxazine (PBO) aerogels are all viable alternatives to traditional resorcinol-formaldehyde (RF) aerogels as precursors to amorphous carbon aerogels. Subsequent high temperature pyrolysis at 2300 ºC of such carbon aerogels under helium has shown that amorphous carbon from PI and PBO yields the highest degree of graphitization, whereas from RF aerogels yields the lowest. Those two types of graphite aerogels include also a high concentration of micron-size columnar and helical (screw-like) structures, whose formation is favored by macroporosity and high nitrogen retention in the 800 ºC-carbonized samples. Control experiments were conducted with corannulene and bromo-corannulene in order to integrate cyclopentyl rings on surfaces of activated carbon, PBO-derived carbon aerogels, and carbon black. In most cases the concentration of rod and helical structures increased dramatically (over 50%). An idealized growth model was formulated for the formation of the rods and screw-like structures, whereas rapid grain growth leads to the formation of cyclopentyl rings and disclinations in the graphitic network. Trivalent nitrogen, when present, assists in the developed of cyclopentyl rings and subsequent growth of the columnar carbon structures. --Abstract, page iv

PHYSICOCHEMICAL MODIFICATIONS AND APPLICATIONS OF CARBON NANO-ONIONS FOR ELECTROCHEMICAL ENERGY STORAGE

Carbon nano-onions (CNOs), concentrically multilayered fullerenes, are prepared by several different methods. We are studying the properties of two specific CNOs: A-CNOs and N-CNOs. A-CNOs are synthesized by underwater arc discharge, and N-CNOs are synthesized by high-temperature graphitization of commercial nanodiamond. In this study the synthesis of A-CNOs are optimized by designing an arc discharge aparatus to control the arc plasma. Moreover other synthesis parameters such as arc power, duty cycles, temperature, graphitic and metal impurities are controlled for optimum production of A-CNOs. Also, a very efficient purification method is developed to screen out A-CNOs from carboneseous and metal impurities. In general, A-CNOs are larger than N-CNOs (ca. 30 nm vs. 7 nm diameter). The high surface area, appropriate mesoporosity, high thermal stability and high electrical conductivity of CNOs make them a promising material for various applications. These hydrophobic materials are functionalized with organic groups on their outer layers to study their surface chemistry and to decorate with metal oxide nanoparticles. Both CNOs and CNO nanocomposites are investigated for application in electrochemical capacitors (ECs). The influences of pH, concentration and additives on the performance of the composites are studied. Electrochemical measurements demonstrate high specific capacitance and high cycling stability with high energy and power density of the composite materials in aqueous electrolyte

Engineering Plasmonic Nanocrystal Coupling Through Template-Assisted Self-Assembly

The construction of materials from nanocrystal building blocks represents a powerful new paradigm for materials design. Just as nature’s materials orchestrate intricate combinations of atoms from the library of the periodic table, nanocrystal “metamaterials” integrate individual nanocrystals into larger architectures with emergent collective properties. The individual nanocrystal “meta-atoms” that make up these materials are themselves each a nanoscale atomic system with tailorable size, shape, and elemental composition, enabling the creation of hierarchical materials with predesigned structure at multiple length scales. However, an improved fundamental understanding of the interactions among individual nanocrystals is needed in order to translate this structural control into enhanced functionality. The ability to form precise arrangements of nanocrystals and measure their collective properties is therefore essential for the continued development of nanocrystal metamaterials. In this dissertation, we utilize template-assisted self-assembly and spatially-resolved spectroscopy to form and characterize individual nanocrystal oligomers. At the intersection of “top-down” and “bottom-up” nanoscale patterning schemes, template-assisted self-assembly combines the design freedom of lithography with the chemical control of colloidal synthesis to achieve unique nanocrystal configurations. Here, we employ shape-selective templates to assemble new plasmonic structures, including heterodimers of Au nanorods and upconversion phosphors, a series of hexagonally-packed Au nanocrystal oligomers, and triangular formations of Au nanorods. Through experimental analysis and numerical simulation, we elucidate the means through which inter-nanocrystal coupling imparts collective optical properties to the plasmonic assemblies. Our self-assembly and measurement strategy offers a versatile platform for exploring optical interactions in a wide range of material systems and application areas

The topology of fullerenes

Fullerenes are carbon molecules that form polyhedral cages. Their bond structures are exactly the planar cubic graphs that have only pentagon and hexagon faces. Strikingly, a number of chemical properties of a fullerene can be derived from its graph structure. A rich mathematics of cubic planar graphs and fullerene graphs has grown since they were studied by Goldberg, Coxeter, and others in the early 20th century, and many mathematical properties of fullerenes have found simple and beautiful solutions. Yet many interesting chemical and mathematical problems in the field remain open. In this paper, we present a general overview of recent topological and graph theoretical developments in fullerene research over the past two decades, describing both solved and open problems. WIREs Comput Mol Sci 2015, 5:96–145. doi: 10.1002/wcms.1207 Conflict of interest: The authors have declared no conflicts of interest for this article. For further resources related to this article, please visit the WIREs website

Characterization of metallic and insulating properties of low-dimensional systems

Dans cette thèse nous avons étudié des indicateurs visant à caractériser les propriétés métalliques ou isolantes de systèmes de basse dimensionnalité à partir de calculs théoriques basés sur la fonction d'onde. Ces systèmes sont intéressants car ils permettent une compréhension en profondeur des phénomènes physiques qui peuvent ensuite être extrapolés à des systèmes plus étendus. Afin de réaliser cette étude nous avons utilisé un nouvel outil basé sur la théorie de la conductivité de Kohn : le tenseur de délocalisation total ou total position spread-tensor (TPS). Ce tenseur est défini comme le second cumulant de l'opérateur position : ? = - 2. Divisé par le numéro des électrons, il diverge quand la fonction d'onde est fortement délocalisée (forte fluctuation de la position des électrons) et converge vers une valeur finie dans le cas contraire. Ainsi, la conductivité est relié à la délocalisation de la fonction d'onde. Dans ce travail, deux définitions du TPS ont été abordées : une quantité sommée sur le spin (spin-summed TPS, SS-TPS) d'une part, et une décomposition selon le spin (spin-partitioned TPS, SSP-TSP) d'autre part. Cette dernière s'est avérée être un outil très efficace pour l'étude de systèmes fortement corrélés. Au cours de la thèse, nous avons commencé par étudier plusieurs systèmes diatomiques présentant des liaisons de natures différentes à l'aide de calculs d'interaction de configurations totale (FCI). Le TPS présente alors un maximum dans une zone précédant la rupture de liaison avant de converger asymptotiquement vers les valeurs atomiques, comme la consistance de taille du tenseur le laissait présager. Dans le cas de systèmes pour lesquels l'état électronique présente un croisement évité, le TPS diverge, mettant ainsi en évidence la forte délocalisation de la fonction d'onde. Le SS-TPS est donc un indicateur de choix pour suivre la nature de la liaison chimique. Nous avons ensuite considéré des systèmes à valence mixte de type II pour lesquels l'état fondamental présente un double-puits de potentiel avec un croisement évité avec le premier état excité. Il est donc nécessaire ici d'utiliser un traitement multi-configurationnel. Deux systèmes modèles ont ainsi été étudiés : i) deux di- mères H2 en interaction faible au niveau FCI et ii) un composé du type spiro au niveau CAS-SCF (à l'aide d'un code que nous avons implémenté dans Molpro). Dans les deux cas, le TPS présentait un maximum très marqué dans la région du croisement évité, signature d'une forte mobilité électronique. Nous nous sommes également intéressés à trois types de chaines d'atomes d'hydrogène : i atomes équidistants ii) chaines dimérisées à longueur de liaison H2 fixée et iii) chaines dimérisées. Tant le SS-TPS que le SP-TPS montrent des comportements différents selon le type de chaine considérée. Les premières ont un caractère métallique et une délocalisation de spin prononcée dans le régime fortement corrélé. Les secondes sont de nature isolante avec une délocalisation limitée. Les chaines dimérisées, quant à elle, dissocient très rapidement vers un état isolant mais avec une forte délocalisation de spin. Ces chaines demi-remplies ont aussi été traitées à l'aide d'hamiltonien de Hubbard et de Heisenberg. Nous avons ainsi pu rationaliser le comportement des SS-TPS et SP-TPS en variant le rapport de l'intégrale de saut et de la répulsion électron- électron (-t/U) entre sites adjacents. Le caractère ferromagnétique/anti-ferromagnétique a également pu être suivi en modifiant la valeur de la constante de couplage J dans le cas fortement corrélé. Finalement, ces indicateurs ont été mis en oeuvre pour des polyacenes cycliques. Dans ce cas, le TPS a permis de comprendre la nature des fonctions d'onde de l'état fondamental obtenues au niveau CAS-SCF et NEVPT2.I carried out a theoretical study to characterize metallic and insulating properties of low-dimensional systems using wave function methods. Low-dimensional systems are particularly important because they allow an understanding that can be extrapolated to higher dimensional systems. We have employed a new tool based on the theory of conductivity of Kohn that we have named: total position-spread tensor (TPS). The TPS is defined as the second moment cumulant of the total position operator: ? = - 2 . The tensor divided by the number of electrons diverges when the wave function is delocalized (high fluctuation of electrons' positions), and it takes finite values for localized ones. In this way, the electrical conductivity is related to the proper delocalization of the wave function. In addition, the tensor can be divided in spin-summed (SS-TPS) and spin-partitioned tensors (SP-TPS). The latter one becomes a powerful tool to the study of strongly correlated systems. In this dissertation, we started to investigate at full configuration interaction (FCI) level diatomic molecules showing different types of bond. The TPS presented a marked maximum before the bond was broken and in the asymptotic limit one recovers the TPS values of isolated atoms (size consistency). For the case of diatomic systems showing avoided-crossing electronic states, the TPS diverges evidencing the high delocalization of the wave function. Therefore, the SS-TPS is capable of monitoring and characterizing molecular wave functions. We considered mixed-valence systems that are often distinguished by a double-well potential energy surface presenting an avoided-crossing. Thus, such a configuration possesses a strongly multireference nature involving at least two states of the same symmetry. Two different systems were investigated: i) two weakly interacting hydrogen dimers that were investigated at Full CI level, and ii) a spiro like molecule where the TPS tensor was evaluated in a CAS-SCF state-averaged wave function using our implementation of the SS- TPS formalism in MOLPRO. We found that the tensor's component in the direction of the electron transfer (ET) shows a marked maximum in the avoided-crossing region, evidencing the presence of a high electron mobility. The formalisms of the SS- and SP-TPS was applied to one dimensional systems composed by three types of half-filled hydrogen chains: i) equally-spaced chains, ii) fixed-bond dimerized chains, and iii) homothetic dimerized chains. Both the SS- and SP-TPS showed different signatures associated to the three types of systems. Equally-spaced chains have metallic wave functions and a high spin delocalization in the strongly correlated regime. In contrast, fixed-bond dimerized chains have an insulating character and a restricted spin delocalization. Finally, homothetic dimerized chains dissociate very quickly which renders them in the insulating state but with a high spin delocalization. We also studied half-filled chains by using the Hubbard and the Heisenberg Hamiltonians. On the one hand, we were able to depict the response of the SS- and SP-TPS by varying the ratio between the hopping and electron-electron repulsion (-t/U parameter) of topological connected sites. On the other hand, the ferromagnetic and anti-ferromagnetic character of the wave functions were evaluated by varying the coupling constant (J) in the strongly correlated systems. A theoretical study of closed polyacenes (PAH) structures was performed at CAS-SCF and NEVPT2 level. Our methodology for choosing the active space using the Hückel Hamiltonian was able to characterize the ground state of the systems that indeed fulfilled the Ovchinnikov rule. Finally, we applied the SS-TPS to understand the nature of the wave functions of these PAHs

Present and Future of Surface-Enhanced Raman Scattering.

The discovery of the enhancement of Raman scattering by molecules adsorbed on nanostructured metal surfaces is a landmark in the history of spectroscopic and analytical techniques. Significant experimental and theoretical effort has been directed toward understanding the surface-enhanced Raman scattering (SERS) effect and demonstrating its potential in various types of ultrasensitive sensing applications in a wide variety of fields. In the 45 years since its discovery, SERS has blossomed into a rich area of research and technology, but additional efforts are still needed before it can be routinely used analytically and in commercial products. In this Review, prominent authors from around the world joined together to summarize the state of the art in understanding and using SERS and to predict what can be expected in the near future in terms of research, applications, and technological development. This Review is dedicated to SERS pioneer and our coauthor, the late Prof. Richard Van Duyne, whom we lost during the preparation of this article

Thermal deposition approaches for graphene growth over various substrates

In the course of the PhD thesis large area homogeneous strictly monolayer graphene films were successfully synthesized with chemical vapor deposition over both Cu and Si (with surface oxide) substrates. These synthetic graphene films were characterized with thorough microscopic and spectrometric tools and also in terms of electrical device performance. Graphene growth with a simple chemo thermal route was also explored for understanding the growth mechanisms. The formation of homogeneous graphene film over Cu requires a clean substrate. For this reason, a study has been conducted to determine the extent to which various pre-treatments may be used to clean the substrate. Four type of pre-treatments on Cu substrates are investigated, including wiping with organic solvents, etching with ferric chloride solution, annealing in air for oxidation, and air annealing with post hydrogen reduction. Of all the pretreatments, air oxidation with post hydrogen annealing is found to be most efficient at cleaning surface contaminants and thus allowing for the formation of large area homogeneous strictly monolayer graphene film over Cu substrate. Chemical vapor deposition is the most generally used method for graphene mass production and integration. There is also interest in growing graphene directly from organic molecular adsorbents on a substrate. Few studies exist. These procedures require multiple step reactions, and the graphene quality is limited due to small grain sizes. Therefore, a significantly simple route has been demonstrated. This involves organic solvent molecules adsorbed on a Cu surface, which is then annealed in a hydrogen atmosphere in order to ensure direct formation of graphene on a clean Cu substrate. The influence of temperature, pressure and gas flow rate on the one-step chemo thermal synthesis route has been investigated systematically. The temperature-dependent study provides an insight into the growth kinetics, and supplies thermodynamic information such as the activation energy, Ea, for graphene synthesis from acetone, isopropanol and ethanol. Also, these studies highlight the role of hydrogen radicals for graphene formation. In addition, an improved understanding of the role of hydrogen is also provided in terms of graphene formation from adsorbed organic solvents (e.g., in comparison to conventional thermal chemical vapor deposition). Graphene synthesis with chemical vapor deposition directly over Si wafer with surface oxide (Si/SiOx ) has proven challenging in terms of large area and uniform layer number. The direct growth of graphene over Si/SiO x substrate becomes attractive because it is free of an undesirable transfer procedure, necessity for synthesis over metal substrate, which causes breakage, contamination and time consumption. To obtain homogeneous graphene growth, a local equilibrium chemical environment has been established with a facile confinement CVD approach, inwhich two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises facetted grains despite initially nucleating as round islands. Upon clustering these grains facet to minimize their energy, which leads to faceting in polygonal forms because the system tends to ideally form hexagons (the lowest energy form). This is much like the hexagonal cells in a beehive honeycomb which require the minimum wax. This process also results in a near minimal total grain boundary length per unit area. This fact, along with the high quality of the resultant graphene is reflected in its electrical performance which is highly comparable with graphene formed over other substrates, including Cu. In addition the graphene growth is self-terminating, which enables the wide parameter window for easy control. This chemical vapor deposition approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates which suffer from transfer. Moreover, this growth path shall be applicable for direct synthesis of other two dimensional materials and their Van der Waals hetero-structures.:Contents Quotation v Kurzfassung vii Abstract xi Contents xiii Acronyms xvii 1 Aims and objectives 1 2 Introduction 5 2.1 Carbon allotropes 6 2.1.1 Hybridized sp 2 carbon nanomaterials 6 2.1.2 Graphene 7 2.2 Properties of graphene 8 2.2.1 Crystalline structure 8 2.2.2 Electrical transport 10 2.2.3 Optical transparency 11 2.2.4 Other properties 12 2.3 Graphene deposition methods 13 2.3.1 Synthesis approaches 13 2.3.2 Chemical vapor deposition 14 2.3.3 Substrate selection 15 2.3.4 Substrate pretreatments 16 2.3.5 Carbon feedstock 17 2.3.6 Thermal chemical vapor deposition 17 2.3.7 Plasma chemical vapor deposition 18 2.3.8 Transfer protocol 19 2.4 Chemical vapor deposition for graphene growth 21 2.4.1 Thermodynamics 22 2.4.2 Arrhenius plots 22 2.4.3 Activation energy 24 2.4.4 Growth kinetics 25 2.4.5 Reaction mechanisms over Cu 27 2.4.6 Reaction mechanisms over Ni 29 2.4.7 Reaction mechanisms over non-metals 31 2.4.8 Reaction mechanisms of free-standing graphene 35 2.5 Summary 35 2.6 Scope of the thesis 36 3 Experimental setup and characterization techniques 37 3.1 Experimental setup of chemical vapor deposition 37 3.2 Optical microscopy 39 3.3 Scanning electron microscopy 40 3.4 Atomic force microscopy 41 3.5 Transmission electron microscopy 42 3.5.1 Selected area electron diffraction 44 3.5.2 Dark field transmission electron microscopy 46 3.6 Raman spectroscopy 47 3.7 Ultraviolet-Visible spectrophotometry 49 3.8 Electrical transport measurements 49 4 CVD growth of graphene on oxidized Cu substrates 51 4.1 Motivation 52 4.2 Experimental protocol 53 4.3 Influence of Cu pretreatments on graphene formation 54 4.4 Influence of Cu oxidation on graphene growth 60 4.5 Effect of oxidation pretreatment on Cu surface cleaning 64 4.6 Summary 66 5 Chemo-thermal synthesis of graphene from organic adsorbents 67 5.1 Motivation 67 5.2 Experimental protocol 69 5.3 Influence of reaction temperature on graphene growth 75 5.4 Influence of reaction pressure on graphene growth 78 5.5 Influence of reaction flow rate on graphene growth 80 5.6 Summary 81 6 Monolayer graphene synthesis directly over Si/SiO x 83 6.1 Motivation 83 6.2 Experimental protocol 86 6.3 Influence of substrate confinement configuration 87 6.4 Time dependent evolution for graphene formation 91 6.5 Grain boundaries in graphene film 95 6.6 Bubble clustering of faceted graphene grains 98 6.7 Electrical and optical performance of graphene 100 6.8 Summary 102 7 Conclusions 103 8 Outlook 107 A Graphene synthesis over Cu and transfer to Si/SiO x substrate 111 B Chemo-thermal synthesis of graphene over Cu 115 C CVD graphene growth directly over Si/SiO x substrate 127 Bibliography 147 List of Figures 193 List of Tables 197 Acknowledgements 199 List of publications 203 Erklaerung 205Im Zuge dieser Doktorarbeit wurden großflächige und homogene Graphen-Monolagen mittels chemischer Gasphasenabscheidung auf Kupfer- (Cu) und Silizium-(Si) Substraten erfolgreich synthetisiert. Solche monolagigen Graphenschichten wurden mithilfe mikroskopischer und spektrometrischer Methoden gründlich charakterisiert. Außerdem wurde der Wachstumsmechanismus von Graphen anhand eines chemo-thermischen Verfahrens untersucht. Die Bildung von homogenen Graphenschichten auf Cu erfordert eine sehr saubere Substratoberfläche, weshalb verschiedene Substratvorbehandlungen und dessen Einfluss auf die Substratoberfläche angestellt wurden. Vier Vorbehandlungsarten von Cu-Substraten wurden untersucht: Abwischen mit organischen Lösungsmitteln, Atzen mit Eisen-(III)-Chloridlösung, Wärmebehandlung an Luft zur Erzeugung von Cu-Oxiden und Wärmebehandlung an Luft mit anschließender Wasserstoffreduktion. Von diesen Vorbehandlungen ist die zuletzt genannte Methode für die anschließende Abscheidung einer großflächigen Graphen-Mono-lage am effektivsten. Die chemische Gasphasenabscheidung ist die am meisten verwendete Methode zur Massenproduktion von Graphen. Es besteht aber auch Interesse an alternativen Methoden, die Graphen direkt aus organischen, auf einem Substrat adsorbierten Molekülen, synthetisieren konnen. Jedoch gibt es derzeit nur wenige Studien zu derartigen alternativen Methoden. Solche Prozessrouten erfordern mehrstufige Reaktionen, welche wiederrum die Qualität der erzeugten Graphenschicht limitieren, da nur kleine Korngrößen erreicht werden konnen. Daher wurde in dieser Arbeit ein deutlich einfacherer Weg entwickelt. Es handelt sich dabei um ein Verfahren, bei dem auf einer Cu-Substratoberfläche adsorbierte, organische Lösungsmittelmoleküle in einer Wasserstoffatmosphäre geglüht werden, um eine direkte Bildung von Graphen auf einem sauberen Cu-Substrat zu gewahrleisten.Der Einfluss von Temperatur, Druck und Gasfluss auf diesen einstufigen chemothermischen Syntheseweg wurde systematisch untersucht. Die temperaturabhängigen Untersuchungen liefern einen Einblick in die Wachstumskinetik und thermodynamische Größen, wie zum Beispiel die Aktivierungsenergie Ea, für die Synthese von Graphen aus Aceton, Isopropanol oder Ethanol. Diese Studien untersuchen außerdem die Rolle von Wasserstoffradikalen auf die Graphensynthese. Weiterhin wurde ein verbessertes Verständnis der Rolle von Wasserstoff auf die Graphen-synthese aus adsorbierten, organischen Lösungsmitteln erlangt (beispielsweise im Vergleich zur konventionellen thermischen Gasphasenabscheidung). Die direkte Graphensynthese mittels chemischer Gasphasenabscheidung auf Si-Substraten mit einer Oxidschicht (Si/SiOx ) ist extrem anspruchsvoll in Bezug auf die großflächige und einheitliche Abscheidung (Lagenanzahl) von Graphen-Monolagen. Das direkte Wachstum von Graphen auf Si/SiOx -Substrat ist interessant, da es frei von unerwünschten Übertragungsverfahren ist und kein Metall-substrat erfordert, welche die erzeugten Graphenschichten brechen lassen können. Um ein homogenes Graphenwachstum zu erzielen wurde durch den Kontakt zweier Si-Wafer, mit ihren Oxidflachen zueinander zeigend, eine lokale Umgebung im chemischen Gleichgewicht erzeugt. Diese Konfiguration der Si-Wafer ist nötig, um eine einheitliche Graphen-Monolage bilden zu können. Eine gründliche Untersuchung des abgeschiedenen Materials zeigt, dass trotz der anfänglichen Keimbildung von runden Inseln facettierte Körner erzeugt werden. Aufgrund der Bestrebung der Graphenkörner ihre (Oberflächen-) Energie zu minimieren, wird eine Facettierung der Körner in polygonaler Form erzeugt, was darin begründet liegt, dass das System idealerweise eine Anordnung von hexagonal geformten Körnern erzeugen würde (niedrigster Energiezustand). Der Prozess ist vergleichbar mit der sechseckigen Zellstruktur einer Bienenstockwabe, welche ein Minimum an Wachs erfordert. Dieser Prozess führt auch zu einer nahezu minimalen Gesamtkorn-grenzlänge pro Flächeneinheit. Diese Tatsache zusammen mit der hohen Qualität der resultierenden Graphenschicht spiegelt sich auch in dessen elektrischer Leistungsfähigkeit wider, die in hohem Maße mit der auf anderen Substraten gebildeten Graphenschichten (inklusive Cu-Substrate) vergleichbar ist. Darüber hinaus ist das Graphenwachstum selbstabschliessend, wodurch ein großes Parameterfenster für eine einfache und kontrollierte Synthese eröffnet wird. Dieser Ansatz zur chemischen Gasphasenabscheidung von Graphen auf Si- Substraten ist leicht skalierbar und gegenüber der Abscheidung auf Metallsubstraten konkurrenzfähig, da keine Substratübertragung notig ist. Darüber hinaus ist dieser Prozess auch für die direkte Synthese anderer zweidimensionalen Materialien und deren Van-der-Waals-Heterostrukturen anwendbar.:Contents Quotation v Kurzfassung vii Abstract xi Contents xiii Acronyms xvii 1 Aims and objectives 1 2 Introduction 5 2.1 Carbon allotropes 6 2.1.1 Hybridized sp 2 carbon nanomaterials 6 2.1.2 Graphene 7 2.2 Properties of graphene 8 2.2.1 Crystalline structure 8 2.2.2 Electrical transport 10 2.2.3 Optical transparency 11 2.2.4 Other properties 12 2.3 Graphene deposition methods 13 2.3.1 Synthesis approaches 13 2.3.2 Chemical vapor deposition 14 2.3.3 Substrate selection 15 2.3.4 Substrate pretreatments 16 2.3.5 Carbon feedstock 17 2.3.6 Thermal chemical vapor deposition 17 2.3.7 Plasma chemical vapor deposition 18 2.3.8 Transfer protocol 19 2.4 Chemical vapor deposition for graphene growth 21 2.4.1 Thermodynamics 22 2.4.2 Arrhenius plots 22 2.4.3 Activation energy 24 2.4.4 Growth kinetics 25 2.4.5 Reaction mechanisms over Cu 27 2.4.6 Reaction mechanisms over Ni 29 2.4.7 Reaction mechanisms over non-metals 31 2.4.8 Reaction mechanisms of free-standing graphene 35 2.5 Summary 35 2.6 Scope of the thesis 36 3 Experimental setup and characterization techniques 37 3.1 Experimental setup of chemical vapor deposition 37 3.2 Optical microscopy 39 3.3 Scanning electron microscopy 40 3.4 Atomic force microscopy 41 3.5 Transmission electron microscopy 42 3.5.1 Selected area electron diffraction 44 3.5.2 Dark field transmission electron microscopy 46 3.6 Raman spectroscopy 47 3.7 Ultraviolet-Visible spectrophotometry 49 3.8 Electrical transport measurements 49 4 CVD growth of graphene on oxidized Cu substrates 51 4.1 Motivation 52 4.2 Experimental protocol 53 4.3 Influence of Cu pretreatments on graphene formation 54 4.4 Influence of Cu oxidation on graphene growth 60 4.5 Effect of oxidation pretreatment on Cu surface cleaning 64 4.6 Summary 66 5 Chemo-thermal synthesis of graphene from organic adsorbents 67 5.1 Motivation 67 5.2 Experimental protocol 69 5.3 Influence of reaction temperature on graphene growth 75 5.4 Influence of reaction pressure on graphene growth 78 5.5 Influence of reaction flow rate on graphene growth 80 5.6 Summary 81 6 Monolayer graphene synthesis directly over Si/SiO x 83 6.1 Motivation 83 6.2 Experimental protocol 86 6.3 Influence of substrate confinement configuration 87 6.4 Time dependent evolution for graphene formation 91 6.5 Grain boundaries in graphene film 95 6.6 Bubble clustering of faceted graphene grains 98 6.7 Electrical and optical performance of graphene 100 6.8 Summary 102 7 Conclusions 103 8 Outlook 107 A Graphene synthesis over Cu and transfer to Si/SiO x substrate 111 B Chemo-thermal synthesis of graphene over Cu 115 C CVD graphene growth directly over Si/SiO x substrate 127 Bibliography 147 List of Figures 193 List of Tables 197 Acknowledgements 199 List of publications 203 Erklaerung 20

Production and processing of graphene and related materials

© 2020 The Author(s). We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV-VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resourceconsuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown