3,427 research outputs found
Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material
In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -Vg of our devices. Time-to-breakdown data are presented and discusse
Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when
used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2)
on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with
these stacks,show dissimilar charge trapping phenomena under varying levels of
Constant- Voltage-Stress (CVS) conditions, which also influences the measured
densities of the interface (Nit) and border (NBT) traps. In the present study
we also report on C-Vg hysteresis curves related to Nit and NBT. We also
propose a new model based on Maxwell-Wagner instabilities mechanism that
explains the dielectric degradations (current decay transient behavior) of the
gate stack devices grown on high mobility substrates under CVS bias from low to
higher fields, and which is unlike to those used for other MOS devices.
Finally, the time dependent degradation of the corresponding devices revealed
an initial current decay due to relaxation, followed by charge trapping and
generation of stress-induced leakage which eventually lead to hard breakdown
after long CVS stressing.Comment: 19pages (double space), 7 figures, original research article,
Submitted to JAP (AIP
Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride
Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.Fil: Jiang, Lanlan. Soochow University; ChinaFil: Shi, Yuanyuan. Soochow University; China. University of Stanford; Estados UnidosFil: Hui, Fei. Soochow University; China. Massachusetts Institute of Technology; Estados UnidosFil: Tang, Kechao. University of Stanford; Estados UnidosFil: Wu, Qian. Soochow University; ChinaFil: Pan, Chengbin. Soochow University; ChinaFil: Jing, Xu. Soochow University; China. University of Texas at Austin; Estados UnidosFil: Uppal, Hasan. University of Manchester; Reino UnidoFil: Palumbo, FĂ©lix Roberto Mario. ComisiĂłn Nacional de EnergĂa AtĂłmica; Argentina. Universidad TecnolĂłgica Nacional; Argentina. Consejo Nacional de Investigaciones CientĂficas y TĂ©cnicas; ArgentinaFil: Lu, Guangyuan. Chinese Academy of Sciences; RepĂşblica de ChinaFil: Wu, Tianru. Chinese Academy of Sciences; RepĂşblica de ChinaFil: Wang, Haomin. Chinese Academy of Sciences; RepĂşblica de ChinaFil: Villena, Marco A.. Soochow University; ChinaFil: Xie, Xiaoming. Chinese Academy of Sciences; RepĂşblica de China. ShanghaiTech University; ChinaFil: McIntyre, Paul C.. University of Stanford; Estados UnidosFil: Lanza, Mario. Soochow University; Chin
Double-gated graphene-based devices
We discuss transport through double gated single and few layer graphene
devices. This kind of device configuration has been used to investigate the
modulation of the energy band structure through the application of an external
perpendicular electric field, a unique property of few layer graphene systems.
Here we discuss technological details that are important for the fabrication of
top gated structures, based on electron-gun evaporation of SiO. We perform
a statistical study that demonstrates how --contrary to expectations-- the
breakdown field of electron-gun evaporated thin SiO films is comparable to
that of thermally grown oxide layers. We find that a high breakdown field can
be achieved in evaporated SiO only if the oxide deposition is directly
followed by the metallization of the top electrodes, without exposure to air of
the SiO layer.Comment: Replaced with revised version. To appear on New Journal of Physic
Fabrication and operation of a two-dimensional ion-trap lattice on a high-voltage microchip
Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, will lead to applications in fields as varied as quantum simulation, metrology and atom–ion interactions. Current surface ion traps often have low trap depths and high heating rates, because of the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a two-dimensional ion-trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of two-dimensional ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice
Electrical current distribution across a metal-insulator-metal structure during bistable switching
Combining scanning electron microscopy (SEM) and electron-beam-induced
current (EBIC) imaging with transport measurements, it is shown that the
current flowing across a two-terminal oxide-based capacitor-like structure is
preferentially confined in areas localized at defects. As the thin-film device
switches between two different resistance states, the distribution and
intensity of the current paths, appearing as bright spots, change. This implies
that switching and memory effects are mainly determined by the conducting
properties along such paths. A model based on the storage and release of charge
carriers within the insulator seems adequate to explain the observed memory
effect.Comment: 8 pages, 7 figures, submitted to J. Appl. Phy
Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks
In the present work we investigate the dielectric relaxation effects and
charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge
substrates. The MOS devices have been subjected to constant voltage stress
(CVS) conditions at accumulation and show relaxation effects in the whole range
of applied stress voltages. Applied voltage polarities as well as thickness
dependence of the relaxation effects have been investigated. Charge trapping is
negligible at low stress fields while at higher fields (>4MV/cm) it becomes
significant. In addition, we give experimental evidence that in tandem with the
dielectric relaxation effect another mechanism- the so-called Maxwell-Wagner
instability- is present and affects the transient current during the
application of a CVS pulse. This instability is also found to be field
dependent thus resulting in a trapped charge which is negative at low stress
fields but changes to positive at higher fields.Comment: 27pages, 10 figures, 3 tables, regular journal contribution (accepted
in IEEE TED, Vol.50, issue 10
- …