Heterostructure engineering of quantum dots-in-a-well infrared photodetectors

Three of the most important characteristics of third-generation imaging systems are high operating temperature, multispectral operation, and large format arrays. The quantum dot infrared photodetector technology, owing to the three-dimensional confinement of carriers, the richness of the electronic spectra in quantum dots, and the mature III-V based fabrication technology, satisfy these requirements. This work focuses on quantum dots-in-a-well (DWELL) detectors in which InAs quantum dots are embedded in a compressively strained InGaAs-GaAs quantum well. Barriers separating two stacks of quantum dots can be GaAs, AlGaAs or a combination of different materials, with \u27smart barriers\u27. Motivation for this work is to improve the understanding and the performance of DWELL detectors to achieve high temperature operation and high signal to noise ratio for these detectors for given wavelength requirements, at applied biases compatible with CMOS technology. This aim has been pursued on three fronts: barrier designs, device designs and material systems. Smart barriers, such as resonant tunneling barriers have been demonstrated to improve the signal to noise ratio of the detector by reducing the dark current significantly, while keeping the photocurrent constant. A systematic experimental study has been conducted for understanding the effect of different types of transitions on the properties of DWELL detectors, which showed that bound to quasibound (B-Q) type of transitions optimize the device performance at moderate bias levels. The performance of B-Q type of architectures has been substantially improved by the use of confinement enhancing (CE) barriers that combine the advantages of high energy barriers, such as low dark current and high signal to noise ratio, with those of low energy barriers, such as high responsivity and longer peak wavelengths at low bias operation. A new type of detector, a quantum dot based quantum cascade detector, has been proposed and implemented. QD-QCD exhibits a strong photovoltaic action, leading to strong performance at zero bias, by the virtue of internal electric field generated by the quantum cascade action in the barrier. The zero bias operation, combined with record low photoconductive gains for any quantum dot detectors, makes QD QCD very attractive for focal plane array applications. For improved understanding, theoretical modeling of quantum dot strain, based on atomistic valence force field method as well as transport simulations of general heterostructure detectors with drift-diffusion model have been developed. The transport simulation results indicate the presence of a strong space charge region forming between the highly n-doped contact regions and non-intentionally doped barrier regions, which makes the internal electric field highly nonlinear in space. This has been verified by systematic experiments, in which effects of this electric field nonlinearity on the device parameters have been studied. This work would enable a device designer to choose different device parameters such as spectral response position and shape, photoconductive gain, response, signal to noise ratio, dark current levels, activation energies etc. This knowledge has been utilized in demonstrating highly sensitive FPAs, as well as high operating temperature imaging (at 140K) with DWELL detectors. State of the art performance has been obtained from different devices at different wavelengths, such as such as a detectivity of 4x1011 cm.Hz1/2W-1 at 77K in a bound to quasibound device with a cutoff wavelength of 8.5 μm, which is higher than that obtained from state of the art QWIPs. Although the dark current levels are substantially lower than standard QWIPs, and background limited photodetection is at much higher temperature, the focal plane array sensitivities are lower than those of the state of the art QWIPs, by around 10 mK, due to lower quantum efficiency (a factor of 2-3) and higher photoconductive gain. This difference can be eliminated by the use of gratings or shape engineering through the use of submonolayer quantum dots and with smaller photoconductive gains with DWELL detectors

Instabilities in crystal growth by atomic or molecular beams

The planar front of a growing a crystal is often destroyed by instabilities. In the case of growth from a condensed phase, the most frequent ones are diffusion instabilities, which will be but briefly discussed in simple terms in chapter II. The present review is mainly devoted to instabilities which arise in ballistic growth, especially Molecular Beam Epitaxy (MBE). The reasons of the instabilities can be geometric (shadowing effect), but they are mostly kinetic or thermodynamic. The kinetic instabilities which will be studied in detail in chapters IV and V result from the fact that adatoms diffusing on a surface do not easily cross steps (Ehrlich-Schwoebel or ES effect). When the growth front is a high symmetry surface, the ES effect produces mounds which often coarsen in time according to power laws. When the growth front is a stepped surface, the ES effect initially produces a meandering of the steps, which eventually may also give rise to mounds. Kinetic instabilities can usually be avoided by raising the temperature, but this favours thermodynamic instabilities. Concerning these ones, the attention will be focussed on the instabilities resulting from slightly different lattice constants of the substrate and the adsorbate. They can take the following forms. i) Formation of misfit dislocations (chapter VIII). ii) Formation of isolated epitaxial clusters which, at least in their earliest form, are `coherent' with the substrate, i.e. dislocation-free (chapter X). iii) Wavy deformation of the surface, which is presumably the incipient stage of (ii) (chapter IX). The theories and the experiments are critically reviewed and their comparison is qualitatively satisfactory although some important questions have not yet received a complete answer.Comment: 90 pages in revtex, 45 figures mainly in gif format. Review paper to be published in Physics Reports. Postscript versions for all the figures can be found at http://www.theo-phys.uni-essen.de/tp/u/politi

Electronic and optical properties of III-Nitride nanostructures

Quantum dots (QDs) based on gallium nitride (GaN), indium nitride (InN), aluminium nitride (AlN) and their respective alloys (e.g. InGaN, AlGaN) have attracted significant interest for “non-classical” light emitters such as single-photon or entangled-photon sources. This originates from the fact that these emitters form the cornerstone for quantum cryptography and quantum computing applications. Thanks to their large band offsets and exciton binding energies, when compared to “standard” III-V based systems (indium gallium arsenide), nitride QDs are attractive to realize non-classical light emission near room temperature. By utilizing InGaN QDs, in principle the emission wavelength regime of these emitters can be tailored; an important feature given that commercial single-photon detectors operate in the visible spectral range. However, a major drawback of conventional nitride-based QD systems originates from the "standard" growth along the polar c-axis of the underlying wurtzite crystal lattice, which results in very strong electrostatic built-in fields. These fields significantly affect the radiative recombination rate of these systems, consequently limiting their efficiency. In this thesis, in a first step, we have targeted the electronic and optical properties of InGaN QD structures grown along a so-called non-polar crystallographic direction. Such an approach allows to keep the benefits of the nitride system, e.g. large band offsets, but at the same time offering distinct new features such as significantly reduced electrostatic built-in fields. We have shown, in conjunction with experiment, that these non-polar InGaN QDs indeed exhibit much faster radiative carrier recombination when compared to a c-plane counterpart. Furthermore, we found here that fundamental changes in the underlying electronic structure, when compared to c-plane systems, lead to strongly linearly polarized light emission with a deterministic axis, from nonpolar InGaN QDs. This feature is of great interest for quantum cryptography applications. Additionally, we were able to show that this high degree of optical linear polarization survived up to temperatures of up to 200K and even beyond. Therefore, on-chip operating conditions are within reach. Our theoretical predictions are in excellent agreement with measurements carried out by our colleagues at the University of Oxford (UK) on structures grown at the University of Cambridge (UK). In addition to single-photon emission properties, we also studied the potential of InGaN based QDs for entangled-photon emission. Here, we demonstrated that InGaN QDs are in principle ideal candidates for such applications. Our theoretical studies, combining fully atomistic electronic structure calculations with many-body theory, show that while intrinsic properties of InGaN alloys forming the QD on the one hand side give significant advantages over conventional indium gallium arsenide emitters, these features, on the other hand, could present a major roadblock for polarization entanglement. Overall, in this work, we have shown that these nanostructures are promising systems for achieving next-generation non-classical light emitters required for quantum cryptography applications

Development and application of the S/PHI/nX library : first-principles calculations of thermodynamic properties of III-V semiconductors

by Sixten BoeckPaderborn, Univ., Diss., 200

Quantum properties of atomic-sized conductors

Using remarkably simple experimental techniques it is possible to gently break a metallic contact and thus form conducting nanowires. During the last stages of the pulling a neck-shaped wire connects the two electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the atomic structure of contacts can be quite complicated, as soon as the weakest point is reduced to just a single atom the complexity is removed. The properties of the contact are then dominantly determined by the nature of this atom. This has allowed for quantitative comparison of theory and experiment for many properties, and atomic contacts have proven to form a rich test-bed for concepts from mesoscopic physics. Properties investigated include multiple Andreev reflection, shot noise, conductance quantization, conductance fluctuations, and dynamical Coulomb blockade. In addition, pronounced quantum effects show up in the mechanical properties of the contacts, as seen in the force and cohesion energy of the nanowires. We review this reseach, which has been performed mainly during the past decade, and we discuss the results in the context of related developments.Comment: Review, 120 pages, 98 figures. In view of the file size figures have been compressed. A higher-resolution version can be found at: http://lions1.leidenuniv.nl/wwwhome/ruitenbe/review/QPASC-hr-ps-v2.zip (5.6MB zip PostScript

Hydrodynamics

The phenomena related to the flow of fluids are generally complex, and difficult to quantify. New approaches - considering points of view still not explored - may introduce useful tools in the study of Hydrodynamics and the related transport phenomena. The details of the flows and the properties of the fluids must be considered on a very small scale perspective. Consequently, new concepts and tools are generated to better describe the fluids and their properties. This volume presents conclusions about advanced topics of calculated and observed flows. It contains eighteen chapters, organized in five sections: 1) Mathematical Models in Fluid Mechanics, 2) Biological Applications and Biohydrodynamics, 3) Detailed Experimental Analyses of Fluids and Flows, 4) Radiation-, Electro-, Magnetohydrodynamics, and Magnetorheology, 5) Special Topics on Simulations and Experimental Data. These chapters present new points of view about methods and tools used in Hydrodynamics