Extending systems-on-chip to the third dimension : performance, cost and technological tradeoffs.

Because of the today's market demand for high-performance, high-density portable hand-held applications, electronic system design technology has shifted the focus from 2-D planar SoC single-chip solutions to different alternative options as tiled silicon and single-level embedded modules as well as 3-D integration. Among the various choices, finding an optimal solution for system implementation dealt usually with cost, performance and other technological trade-off analysis at the system conceptual level. It has been identified that the decisions made within the first 20% of the total design cycle time will ultimately result up to 80% of the final product cost. In this paper, we discuss appropriate and realistic metric for performance and cost trade-off analysis both at system conceptual level (up-front in the design phase) and at implementation phase for verification in the three-dimensional integration. In order to validate the methodology, two ubiquitous electronic systems are analyzed under various implementation schemes and discuss the pros and cons of each of them

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

TSV placement optimization for liquid cooled 3D-ICs with emerging NVMs

Three dimensional integrated circuits (3D-ICs) are a promising solution to the performance bottleneck in planar integrated circuits. One of the salient features of 3D-ICs is their ability to integrate heterogeneous technologies such as emerging non-volatile memories (NVMs) in a single chip. However, thermal management in 3D-ICs is a significant challenge, owing to the high heat flux (~ 250 W/cm2). Several research groups have focused either on run-time or design-time mechanisms to reduce the heat flux and did not consider 3D-ICs with heterogeneous stacks. The goal of this work is to achieve a balanced thermal gradient in 3D-ICs, while reducing the peak temperatures. In this research, placement algorithms for design-time optimization and choice of appropriate cooling mechanisms for run-time modulation of temperature are proposed. Specifically, an architectural framework which introduce weight-based simulated annealing (WSA) algorithm for thermal-aware placement of through silicon vias (TSVs) with inter-tier liquid cooling is proposed for design-time. In addition, integrating a dedicated stack of emerging NVMs such as RRAM, PCRAM and STTRAM, a run-time simulation framework is developed to analyze the thermal and performance impact of these NVMs in 3D-MPSoCs with inter-tier liquid cooling. Experimental results of WSA algorithm implemented on MCNC91 and GSRC benchmarks demonstrate up to 11 K reduction in the average temperature across the 3D-IC chip. In addition, power density arrangement in WSA improved the uniformity by 5%. Furthermore, simulation results of PARSEC benchmarks with NVM L2 cache demonstrates a temperature reduction of 12.5 K (RRAM) compared to SRAM in 3D-ICs. Especially, RRAM has proved to be thermally efficient replacement for SRAM with 34% lower energy delay product (EDP) and 9.7 K average temperature reduction

Thermal-Aware Networked Many-Core Systems

Advancements in IC processing technology has led to the innovation and growth happening in the consumer electronics sector and the evolution of the IT infrastructure supporting this exponential growth. One of the most difficult obstacles to this growth is the removal of large amount of heatgenerated by the processing and communicating nodes on the system. The scaling down of technology and the increase in power density is posing a direct and consequential effect on the rise in temperature. This has resulted in the increase in cooling budgets, and affects both the life-time reliability and performance of the system. Hence, reducing on-chip temperatures has become a major design concern for modern microprocessors. This dissertation addresses the thermal challenges at different levels for both 2D planer and 3D stacked systems. It proposes a self-timed thermal monitoring strategy based on the liberal use of on-chip thermal sensors. This makes use of noise variation tolerant and leakage current based thermal sensing for monitoring purposes. In order to study thermal management issues from early design stages, accurate thermal modeling and analysis at design time is essential. In this regard, spatial temperature profile of the global Cu nanowire for on-chip interconnects has been analyzed. It presents a 3D thermal model of a multicore system in order to investigate the effects of hotspots and the placement of silicon die layers, on the thermal performance of a modern ip-chip package. For a 3D stacked system, the primary design goal is to maximise the performance within the given power and thermal envelopes. Hence, a thermally efficient routing strategy for 3D NoC-Bus hybrid architectures has been proposed to mitigate on-chip temperatures by herding most of the switching activity to the die which is closer to heat sink. Finally, an exploration of various thermal-aware placement approaches for both the 2D and 3D stacked systems has been presented. Various thermal models have been developed and thermal control metrics have been extracted. An efficient thermal-aware application mapping algorithm for a 2D NoC has been presented. It has been shown that the proposed mapping algorithm reduces the effective area reeling under high temperatures when compared to the state of the art.Siirretty Doriast

Thermal Management in Fine-Grained 3-D Integrated Circuits

For beyond 2-D CMOS logic, various 3-D integration approaches specially transistor based 3-D integrations such as monolithic 3-D [1], Skybridge [2], SN3D [3] holds most promise. However, such 3D architectures within small form factor increase hotspots and demand careful consideration of thermal management at all levels of integration [4] as stacked transistors are detached from the substrate (i.e., heat sink). Traditional system level approaches such as liquid cooling [5], heat spreader [6], etc. are inadequate for transistor level 3-D integration and have huge cost overhead [7]. In this paper, we investigate the thermal profile for transistor level 3-D integration approaches through finite element based modeling. Additionally, we propose generic physical level heat management features for such transistor level 3-D integration and show their application through detailed thermal modeling and simulations. These features include a thermal junction and heat conducting nano pillar. The heat junction is a specialized junction to extract heat from a selected region in 3-D; it allows heat conduction without interference with the electrical activities of the circuit. In conjunction with the junction, our proposed thermal pillars enable heat dissipation through the substrate; these pillars are analogous to TSVs/Vias, but carry only heat. Such structures are generic and is applicable to any transistor level 3-D integration approaches. We perform 3-D finite element based analysis to capture both static and transient thermal behaviors of 3-D circuits, and show the effectiveness of heat management features. Our simulation results show that without any heat extraction feature, temperature for 3-D integrated circuits increased by almost 100K-200K. However, proposed heat extraction feature is very effective in heat management, reducing temperature from heated area by up to 53%.Comment: 9 Page

CAD methodologies for low power and reliable 3D ICs

The main objective of this dissertation is to explore and develop computer-aided-design (CAD) methodologies and optimization techniques for reliability, timing performance, and power consumption of through-silicon-via(TSV)-based and monolithic 3D IC designs. The 3D IC technology is a promising answer to the device scaling and interconnect problems that industry faces today. Yet, since multiple dies are stacked vertically in 3D ICs, new problems arise such as thermal, power delivery, and so on. New physical design methodologies and optimization techniques should be developed to address the problems and exploit the design freedom in 3D ICs. Towards the objective, this dissertation includes four research projects. The first project is on the co-optimization of traditional design metrics and reliability metrics for 3D ICs. It is well known that heat removal and power delivery are two major reliability concerns in 3D ICs. To alleviate thermal problem, two possible solutions have been proposed: thermal-through-silicon-vias (T-TSVs) and micro-fluidic-channel (MFC) based cooling. For power delivery, a complex power distribution network is required to deliver currents reliably to all parts of the 3D IC while suppressing the power supply noise to an acceptable level. However, these thermal and power networks pose major challenges in signal routability and congestion. In this project, a co-optimization methodology for signal, power, and thermal interconnects in 3D ICs is presented. The goal of the proposed approach is to improve signal, thermal, and power noise metrics and to provide fast and accurate design space explorations for early design stages. The second project is a study on 3D IC partition. For a 3D IC, the target circuit needs to be partitioned into multiple parts then mapped onto the dies. The partition style impacts design quality such as footprint, wirelength, timing, and so on. In this project, the design methodologies of 3D ICs with different partition styles are demonstrated. For the LEON3 multi-core microprocessor, three partitioning styles are compared: core-level, block-level, and gate-level. The design methodologies for such partitioning styles and their implications on the physical layout are discussed. Then, to perform timing optimizations for 3D ICs, two timing constraint generation methods are demonstrated that lead to different design quality. The third project is on the buffer insertion for timing optimization of 3D ICs. For high performance 3D ICs, it is crucial to perform thorough timing optimizations. Among timing optimization techniques, buffer insertion is known to be the most effective way. The TSVs have a large parasitic capacitance that increases the signal slew and the delay on the downstream. In this project, a slew-aware buffer insertion algorithm is developed that handles full 3D nets and considers TSV parasitics and slew effects on delay. Compared with the well-known van Ginneken algorithm and a commercial tool, the proposed algorithm finds buffering solutions with lower delay values and acceptable runtime overhead. The last project is on the ultra-high-density logic designs for monolithic 3D ICs. The nano-scale 3D interconnects available in monolithic 3D IC technology enable ultra-high-density device integration at the individual transistor-level. The benefits and challenges of monolithic 3D integration technology for logic designs are investigated. First, a 3D standard cell library for transistor-level monolithic 3D ICs is built and their timing and power behavior are characterized. Then, various interconnect options for monolithic 3D ICs that improve design quality are explored. Next, timing-closed, full-chip GDSII layouts are built and iso-performance power comparisons with 2D IC designs are performed. Important design metrics such as area, wirelength, timing, and power consumption are compared among transistor-level monolithic 3D, gate-level monolithic 3D, TSV-based 3D, and traditional 2D designs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin; Committee Member: Mukhopadhyay, Saiba