Small business innovation research. Abstracts of completed 1987 phase 1 projects

Non-proprietary summaries of Phase 1 Small Business Innovation Research (SBIR) projects supported by NASA in the 1987 program year are given. Work in the areas of aeronautical propulsion, aerodynamics, acoustics, aircraft systems, materials and structures, teleoperators and robotics, computer sciences, information systems, spacecraft systems, spacecraft power supplies, spacecraft propulsion, bioastronautics, satellite communication, and space processing are covered

Nuclear Spin Alignment in Optically Pumped Semiconductors

Nuclear magnetic resonance (NMR) has shown its ability to be a very informative analytical technique due to the ability to measure very small changes in the energy splittings due to the nuclei’s local environment. However, this ability is hindered by the low sensitivity of the experiment. Many methods have been postulated and implemented to enhance the sensitivity of NMR experiments; one of which is optically pumped NMR (OPNMR). In this dissertation, the usefulness and potential applications of OPNMR are presented. First, a doubly resonant OPNMR probe was fabricated in order to complete more advanced NMR techniques while optically pumping the semiconductor sample. OPNMR was then shown to be very beneficial and accurate for measuring light hole transitions in semiconductors, which are typically difficult to observe using traditional techniques. The optical pumping behavior of a sample (CdTe) has been debated, but was measured here in order to obtain the expected trends and behavior. Discussion of the potential uses of optically oriented isolated spins pairs is presented and the characterization of such spin pairs is implemented, which included the first experimental report of a postulated NMR sequence (a version of spin echo double resonance). An Al2O3/GaAs interface was studied by OPNMR in order to observe the properties for the first time and the measured polarization was much higher than previously reported. Lastly, molecular dynamic and density functional theory calculations were used collaboratively to provide an accurate model for amorphous alumina

Modeling of a Single-Phase Liquid Cooling System for Power Electronics Applications

This work investigates the reliability of a single-phase, liquid cooling system used for the thermal management of a medium power level converter system. The system utilizes a plastic insert cold plate design to provide even cooling over the backside of a power electronics device by directing coolant through parallel serpentine channels. Material selection and compression set testing evaluated suitable elastomers for seals and polymers for the plastic insert. Computational fluid dynamics software was used to evaluate the thermal performance of the cooling system under ideal conditions as well as various wear out conditions (e.g. channel blockage, erosion of channel walls). Properties of used 50/50 ethylene glycol water coolant were evaluated to discover additional causes of reduced thermal performance. After completing the cooling system evaluation under initial and degraded conditions, the impact on a power module's operating temperature was correlated to an estimation of the device's reliability

4H-SiC Integrated circuits for high temperature and harsh environment applications

Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.Postprint (published version

Computer tools for systems engineering at LaRC

The Systems Engineering Office (SEO) has been established to provide life cycle systems engineering support to Langley research Center projects. over the last two years, the computing market has been reviewed for tools which could enhance the effectiveness and efficiency of activities directed towards this mission. A group of interrelated applications have been procured, or are under development including a requirements management tool, a system design and simulation tool, and project and engineering data base. This paper will review the current configuration of these tools and provide information on future milestones and directions

The Conference on High Temperature Electronics

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment

A Novel Approach to Accurately Determine the tq Parameter of Thyristors

International audienceThe continued use of high-voltage thyristor devices in industry and their increased use in high-voltage dc transmission systems call for more attention to the properties of these devices. One of the important thyristor parameters is their turn-off time tq, which can be a limiting factor when applying thyristors at elevated switching frequencies. Hence, the accurate measurement of tq and its variation versus the operating conditions remains a crucial task for thyristor converters operating at elevated switching frequencies. In this paper, a proper test circuit for measuring this parameter with a high level of accuracy has been designed and built. Owing to the test circuit specificity, the variation effects of several electrical and physical constraints, such as the forward current IF , the reverse applied voltage VR, the operating temperature To, and the ramp rate of the forward reapplied voltage dVD/dt, on the tq parameter of thyristors are also studied and analyzed based on the physics of semiconductor devices and associated simulations

MULTISCALE EXAMINATION AND MODELING OF ELECTRON TRANSPORT IN NANOSCALE MATERIALS AND DEVICES

For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) in use today. Several new transistor designs, some designed and built here at Michigan Tech, involve electrons tunneling their way through arrays of nanoparticles. We use a multi-scale approach to model these devices and study their behavior. For investigating the tunneling characteristics of the individual junctions, we use a first-principles approach to model conduction between sub-nanometer gold particles. To estimate the change in energy due to the movement of individual electrons, we use the finite element method to calculate electrostatic capacitances. The kinetic Monte Carlo method allows us to use our knowledge of these details to simulate the dynamics of an entire device— sometimes consisting of hundreds of individual particles—and watch as a device ‘turns on’ and starts conducting an electric current. Scanning tunneling microscopy (STM) and the closely related scanning tunneling spectroscopy (STS) are a family of powerful experimental techniques that allow for the probing and imaging of surfaces and molecules at atomic resolution. However, interpretation of the results often requires comparison with theoretical and computational models. We have developed a new method for calculating STM topographs and STS spectra. This method combines an established method for approximating the geometric variation of the electronic density of states, with a modern method for calculating spin-dependent tunneling currents, offering a unique balance between accuracy and accessibility