Effects of dissipation on quantum phase transitions

We discuss the effect of dissipation on quantum phase transitions. In particular we concentrate on the Superconductor to Insulator and Quantum-Hall to Insulator transitions. By invoking a phenomenological parameter $\alpha$ to describe the coupling of the system to a continuum of degrees of freedom representing the dissipative bath, we obtain new phase diagrams for the quantum Hall and superconductor-insulator problems. Our main result is that, in two-dimensions, the metallic phases observed in finite magnetic fields (possibly also strictly zero field) are adiabatically deformable from one to the other. This is plausible, as there is no broken symmetry which differentiates them.Comment: 13 pages, 4 figure

Transmission lines and resonators based on quantum Hall plasmonics: electromagnetic field, attenuation and coupling to qubits

Quantum Hall edge states have some characteristic features that can prove useful to measure and control solid state qubits. For example, their high voltage to current ratio and their dissipationless nature can be exploited to manufacture low-loss microwave transmission lines and resonators with a characteristic impedance of the order of the quantum of resistance $h/e^2\sim 25\mathrm{k\Omega}$. The high value of the impedance guarantees that the voltage per photon is high and for this reason high impedance resonators can be exploited to obtain larger values of coupling to systems with a small charge dipole, e.g. spin qubits. In this paper, we provide a microscopic analysis of the physics of quantum Hall effect devices capacitively coupled to external electrodes. The electrical current in these devices is carried by edge magnetoplasmonic excitations and by using a semiclassical model, valid for a wide range of quantum Hall materials, we discuss the spatial profile of the electromagnetic field in a variety of situations of interest. Also, we perform a numerical analysis to estimate the lifetime of these excitations and, from the numerics, we extrapolate a simple fitting formula which quantifies the $Q$ factor in quantum Hall resonators. We then explore the possibility of reaching the strong photon-qubit coupling regime, where the strength of the interaction is higher than the losses in the system. We compute the Coulomb coupling strength between the edge magnetoplasmons and singlet-triplet qubits, and we obtain values of the coupling parameter of the order $100\mathrm{MHz}$; comparing these values to the estimated attenuation in the resonator, we find that for realistic qubit designs the coupling can indeed be strong

The Quantum Hall Effect of Field Induced Spin Density Wave Phases: the Physics of the Ultra Quantum Crystal

The Quantum Hall Effect of Field Induced Spin Density Wave Phases is accounted for within a weak coupling theory which assumes that in the relevant low temperature part of the phase diagram the quasi one dimensional conductor is well described by Fermi liquid theory. Recent experimental results show that sign inversion of the Hall Plateaux takes place all the way down from the instability line of the normal state. The Quantum Nesting model, when it takes into account small perturbations away from perfect nesting, describes well not only the usual sequence of Hall plateaux, but also the anomalies connected with sign inversion of the Hall Effect. Experimental observation of de-doubling of sub-phase to sub-phase transition lines suggests that superposition of SDW order parameters occurs in some parts of the phase diagram. The collective excitations of the Ultra Quantum Crystal have a specific magneto-roton structure. The SDW case exhibits,apart from the usual spin waves, topological excitations which are either skyrmions or half skyrmions. It is suggested that magneto-rotons may have been observed some years ago in specific heat experiments.Comment: 17 pages, latex, 6 figures, available on request at [email protected]

Transport equation for 2D electron liquid under microwave radiation plus magnetic field and the Zero Resistance State

A general transport equation for the center of mass motion is constructed to study transports of electronic system under uniform magnetic field and microwave radiation. The equation is applied to study 2D electron system in the limit of weak disorder where negative resistance instability is observed when the radiation field is strong enough. A solution of the transport equation with spontaneous AC current is proposed to explain the experimentally observed Radiation-Induced Zero Resistance State.Comment: 9 pages, 1 figur

Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements

Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene transferred on $\textrm{Si/SiO}_{2}$ substrate. From the charge carrier density dependence of the conductivity and from the measurement of the quantum corrections at low magnetic field, we deduce that transport properties in these devices are mainly governed by the Coulomb interaction of carriers with a large concentration of charged impurities. In the QHE regime, at high magnetic field and low temperature ($T<1.3 \textrm{K}$), the Hall resistance is measured by comparison with a GaAs based quantum resistance standard using a cryogenic current comparator. In the low dissipation limit, it is found quantized within 5 parts in $10^{7}$ (one standard deviation, $1 \sigma$) at the expected rational fractions of the von Klitzing constant, respectively $R_{\mathrm{K}}/2$ and $R_{\mathrm{K}}/4$ in the ML and BL devices. These results constitute the most accurate QHE quantization tests to date in monolayer and bilayer exfoliated graphene. It turns out that a main limitation to the quantization accuracy, which is found well above the $10^{-9}$ accuracy usually achieved in GaAs, is the low value of the QHE breakdown current being no more than $1 \mu\mathrm{A}$. The current dependence of the longitudinal conductivity investigated in the BL Hall bar shows that dissipation occurs through quasi-elastic inter-Landau level scattering, assisted by large local electric fields. We propose that charged impurities are responsible for an enhancement of such inter-Landau level transition rate and cause small breakdown currents.Comment: 14 pages, 9 figure

Compendium for precise ac measurements of the quantum Hall resistance

In view of the progress achieved in the field of the ac quantum Hall effect, the Working Group of the Comite Consultatif d'Electricite et Magnetisme (CCEM) on the AC Quantum Hall Effect asked the authors of this paper to write a compendium which integrates their experiences with ac measurements of the quantum Hall resistance. In addition to the important early work performed at the Bureau International des Poids et Mesures and the National Physical Laboratory, UK, further experience has been gained during a collaboration of the authors' institutes NRC, METAS, and PTB, and excellent agreement between the results of different national metrology institutes has been achieved. This compendium summarizes the present state of the authors' knowledge and reviews the experiences, tests and precautions that the authors have employed to achieve accurate measurements of the ac quantum Hall effect. This work shows how the ac quantum Hall effect can be reliably used as a quantum standard of ac resistance having a relative uncertainty of a few parts in 10^8.Comment: 26 pages, 8 figure

Quantum Anomalous Hall Effect in Hg1−y_{1-y}Mny_{y}Te Quantum Wells

The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg$_{1-y}$Mn$_{y}$Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the $Mn$ atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the $Mn$ atoms. This effect enables dissipationless charge current in spintronics devices.Comment: 5 pages, 3 figures. For high resolution figures see final published version when availabl