12,307 research outputs found

    Phased Array Systems in Silicon

    Get PDF
    Phased array systems, a special case of MIMO systems, take advantage of spatial directivity and array gain to increase spectral efficiency. Implementing a phased array system at high frequency in a commercial silicon process technology presents several challenges. This article focuses on the architectural and circuit-level trade-offs involved in the design of the first silicon-based fully integrated phased array system operating at 24 GHz. The details of some of the important circuit building blocks are also discussed. The measured results demonstrate the feasibility of using integrated phased arrays for wireless communication and vehicular radar applications at 24 GHz

    Integrated phased array systems in silicon

    Get PDF
    Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-ÎĽm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-ÎĽm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

    Fully integrated millimeter-wave CMOS phased arrays

    Get PDF
    A decade ago, RF CMOS, even at low gigahertz frequencies, was considered an oxymoron by all but the most ambitious and optimistic. Today, it is a dominating force in most commercial wireless applications (e.g., cellular, WLAN, GPS, BlueTooth, etc.) and has proliferated into areas such as watt level power amplifiers (PA) [1] that have been the undisputed realm of compound semiconductors. This seemingly ubiquitous embracement of silicon and particularly CMOS is no accident. It stems from the reliable nature of silicon process technologies that make it possible to integrated hundreds of millions of transistors on a single chip without a single device failure, as evident in today’s microprocessors. Applied to microwave and millimeter wave applications, silicon opens the door for a plethora of new topologies, architectures, and applications. This rapid adoption of silicon is further facilitated by one’s ability to integrate a great deal of in situ digital signal processing and calibration [2]. Integration of high-frequency phased-array systems in silicon (e.g., CMOS) promises a future of low-cost radar and gigabit-per-second wireless communication networks. In communication applications, phased array provides an improved signal-to-noise ratio via formation of a beam and reduced interference generation for other users. The practically unlimited number of active and passive devices available on a silicon chip and their extremely tight control and excellent repeatability enable new architectures (e.g., [3]) that are not practical in compound semiconductor module-based approaches. The feasibility of such approaches can be seen through the discussion of an integrated 24GHz 4-element phased-array transmitter in 0.18μm CMOS [2], capable of beam forming and rapid beam steering for radar applications. On-chip power amplifiers (PA), with integrated 50Ω output matching, make this a fully-integrated transmitter. This CMOS transmitter and the 8-element phased-array SiGe receiver in [5], demonstrate the feasibility of 24GHz phased-array systems in silicon-based processes

    On-dimensional off-chip beam steering and shaping using optical phased arrays on silicon-on-insulator

    Get PDF
    Optical beam steering can find applications in several domains such as laser scanning, LiDAR (Light Detection And Ranging), wireless data transfer and optical switches and interconnects. As present beam steering approaches use mechanical motion such as moving mirrors or MEMS (Micro Electro Mechanical Systems) or molecular movement using liquid crystals, they are usually limited in speed and/or performance. Therefore we have studied the possibilities of the integrated silicon photonics platform in beam steering applications. In this paper, we have investigated a 16 element one-dimensional optical phased array on silicon-on-insulator with a field-of-view of 23. Using thermo-optic phase tuners, we have shown beam steering over the complete field-of-view. By programming the phase tuners as a lens, we have also shown the focusing capabilities of this one-dimensional optical phased array. The field-of-view can easily be increased by decreasing the width of the waveguides. This clearly shows the potential of silicon photonics in beam steering and scanning applications

    Advances in silicon phased-array receiver IC's

    Get PDF
    Phased-Arrays are increasingly used, and require Silicon implementations to result in affordable multi-beam systems. In this paper, CMOS implementations of two novel analogue beamforming multi-channel receivers will be presented. A narrow-band highly linear system exploiting switches and capacitors in advanced CMOS is presented, implementing a fully passive switched capacitor vector modulator exploiting a zero-IF I/Q mixer: This technique is not applicable to very wideband phased-array receivers. These systems require true-time delay beamforming, which is implemented in the second CMOS implementation. An innovative gm-RC implementation of a true-time delay cell is exploited in a four-channel beamforming receiver with more than L.5 GHz bandwidth, in a standard 0.13 um CMOS process. Professional phased-arrays can often not live with the dynamic range limitations imposed by these implementations. To that end a SiGe implementation of an integrated receiver was realized targeting a digital beamforming phased-array. Dynamic range and flexibility of use were the main driving factors. Alltogether, these results show large progress with respect to the feasibility of Silicon-based phased-array front-end implementation for commercial as well as professional phased-arrays. © 2012 IEEE

    Microwave characterization of slotline on high resistivity silicon for antenna feed network

    Get PDF
    Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide

    mm-Wave Silicon ICs: Challenges and Opportunities

    Get PDF
    Millimeter-waves offer promising opportunities and interesting challenges to silicon integrated circuit and system designers. These challenges go beyond standard circuit design questions and span a broader range of topics including wave propagation, antenna design, and communication channel capacity limits. It is only meaningful to evaluate the benefits and shortcoming of silicon-based mm-wave integrated circuits in this broader context. This paper reviews some of these issues and presents several solutions to them

    A Fully Integrated 24-GHz Eight-Element Phased-Array Receiver in Silicon

    Get PDF
    This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal combining is performed at an IF of 4.8 GHz. The phase-shifting with 4 bits of resolution is realized at the LO port of the first down-conversion mixer. A ring LC voltage-controlled oscillator (VCO) generates 16 different phases of the LO. An integrated 19.2-GHz frequency synthesizer locks the VCO frequency to a 75-MHz external reference. Each signal path achieves a gain of 43 dB, a noise figure of 7.4 dB, and an IIP3 of -11 dBm. The eight-path array achieves an array gain of 61 dB and a peak-to-null ratio of 20 dB and improves the signal-to-noise ratio at the output by 9 dB

    The Future of High Frequency Circuit Design

    Get PDF
    The cut-off wavelengths of integrated silicon transistors have exceeded the die sizes of the chips being fabricated with them. Combined with the ability to integrate billions of transistors on the same die, this size-wavelength cross-over has produced a unique opportunity for a completely new class of holistic circuit design combining electromagnetics, device physics, circuits, and communication system theory in one place. In this paper, we discuss some of these opportunities and their associated challenges in greater detail and provide a few of examples of how they can be used in practice

    (Invited) mm-wave silicon ICs: An opportunity for holistic design

    Get PDF
    Millimeter-waves integrated circuits offer a unique opportunity for a holistic design approach encompassing RF, analog, and digital, as well as radiation and electromagnetics. The ability to deal with the complete system from the digital circuitry to on-chip antennas and everything in between offers unparalleled opportunities for completely new architectures and topologies, previously impossible due the traditional partitioning of various blocks in conventional design. This opens a plethora of new architectural and system level innovation within the integrated circuit platform. This paper reviews some of the challenges and opportunities for mm-wave ICs and presents several solutions to them
    • …
    corecore