The Effect of DC Component on CMOS Injection-Coupled LC Quadrature Oscillator (IC-QO)

This paper creates a different insight to improve phase noise of Injection-Coupled quadrature oscillators (QOs). In fact, there are several phase noise functions and the important parameter is carrier power that considered here. The QO is analyzed and the mismatches between LC tanks that are the main proofs of phase error in this oscillator are shown. The main aim of this paper is focused on the reduction of phase noise by considering DC term. It is shown that the DC level which ignored in the most previous works is also important to improve phase noise by the carrier power. With due attention in the previous equations the phase noise can be reduced and the phase error can be cancelled or controlled by adjusting bias current. On the other hand as a result, is obtained that increasing of the drain current and the voltage of LC tank decrease the phase noise and the phase error simultaneously. To confirm the proposed idea and analysis, a 5.5 GHz QO is designed and simulated using 0.18µm TSMC CMOS technology. The simulation results show confirmation of the proposed idea

Analysis and design of sinusoidal quadrature RC-oscillators

Modern telecommunication equipment requires components that operate in many different frequency bands and support multiple communication standards, to cope with the growing demand for higher data rate. Also, a growing number of standards are adopting the use of spectrum efficient digital modulations, such as quadrature amplitude modulation (QAM) and orthogonal frequency division multiplexing (OFDM). These modulation schemes require accurate quadrature oscillators, which makes the quadrature oscillator a key block in modern radio frequency (RF) transceivers. The wide tuning range characteristics of inductorless quadrature oscillators make them natural candidates, despite their higher phase noise, in comparison with LC-oscillators. This thesis presents a detailed study of inductorless sinusoidal quadrature oscillators. Three quadrature oscillators are investigated: the active coupling RC-oscillator, the novel capacitive coupling RCoscillator, and the two-integrator oscillator. The thesis includes a detailed analysis of the Van der Pol oscillator (VDPO). This is used as a base model oscillator for the analysis of the coupled oscillators. Hence, the three oscillators are approximated by the VDPO. From the nonlinear Van der Pol equations, the oscillators’ key parameters are obtained. It is analysed first the case without component mismatches and then the case with mismatches. The research is focused on determining the impact of the components’ mismatches on the oscillator key parameters: frequency, amplitude-, and quadrature-errors. Furthermore, the minimization of the errors by adjusting the circuit parameters is addressed. A novel quadrature RC-oscillator using capacitive coupling is proposed. The advantages of using the capacitive coupling are that it is noiseless, requires a small area, and has low power dissipation. The equations of the oscillation amplitude, frequency, quadrature-error, and amplitude mismatch are derived. The theoretical results are confirmed by simulation and by measurement of two prototypes fabricated in 130 nm standard complementary metal-oxide-semiconductor (CMOS) technology. The measurements reveal that the power increase due to the coupling is marginal, leading to a figure-of-merit of -154.8 dBc/Hz. These results are consistent with the noiseless feature of this coupling and are comparable to those of the best state-of-the-art RC-oscillators, in the GHz range, but with the lowest power consumption (about 9 mW). The results for the three oscillators show that the amplitude- and the quadrature-errors are proportional to the component mismatches and inversely proportional to the coupling strength. Thus, increasing the coupling strength decreases both the amplitude- and quadrature-errors. With proper coupling strength, a quadrature error below 1° and amplitude imbalance below 1% are obtained. Furthermore, the simulations show that increasing the coupling strength reduces the phase noise. Hence, there is no trade-off between phase noise and quadrature error. In the twointegrator oscillator study, it was found that the quadrature error can be eliminated by adjusting the transconductances to compensate the capacitance mismatch. However, to obtain outputs in perfect quadrature one must allow some amplitude error

RF CMOS quadrature voltage-controlled oscillator design using superharmonic coupling method.

Chung, Wai Fung.Thesis (M.Phil.)--Chinese University of Hong Kong, 2007.Includes bibliographical references (leaves 98-100).Abstracts in English and Chinese.摘要 --- p.IIIACKNOWLEDGEMENT --- p.IVCONTENTS --- p.VLIST OF FIGURES --- p.VIIILIST OF TABLES --- p.XLIST OF TABLES --- p.XChapter CHAPTER 1 --- INTRODUCTION --- p.1Chapter 1.1 --- Motivation --- p.1Chapter 1.2 --- Receiver Architecture --- p.3Chapter 1.2.1 --- Zero-IF Receivers --- p.4Chapter 1.2.2 --- Low-IF Receivers --- p.6Chapter 1.2.2.1 --- Hartley Architecture --- p.7Chapter 1.2.2.2 --- Weaver Architecture --- p.9Chapter 1.3 --- Image-rejection ratio --- p.10Chapter 1.4 --- Thesis Organization --- p.12Chapter CHAPTER 2 --- FUNDAMENTALS OF OSCILLATOR --- p.13Chapter 2.1 --- Basic Oscillator Theory --- p.13Chapter 2.2 --- Varactor --- p.15Chapter 2.3 --- Inductor --- p.17Chapter 2.4 --- Phase noise --- p.22Chapter 2.4.1 --- The Leeson ´ةs phase noise expression --- p.24Chapter 2.4.2 --- Linear model --- p.25Chapter 2.4.3 --- Linear Time-Variant phase noise model --- p.28Chapter CHAPTER 3 --- FULLY-INTEGRATED CMOS OSCILLATOR DESIGN --- p.31Chapter 3.1 --- Ring oscillator --- p.31Chapter 3.2 --- LC oscillator --- p.33Chapter 3.2.1 --- LC-tank resonator --- p.34Chapter 3.2.2 --- Negative transconductance --- p.36Chapter 3.3 --- Generation of quadrature phase signals --- p.39Chapter 3.4 --- Quadrature VCO topologies --- p.41Chapter 3.4.1 --- Parallel-coupled QVCO --- p.41Chapter 3.4.2 --- Series-coupled QVCO --- p.46Chapter 3.4.3 --- QVCO with Back-gate Coupling --- p.47Chapter 3.4.4 --- QVCO using superharmonic coupling --- p.49Chapter 3.5 --- Novel QVCO using back-gate superharmonic coupling --- p.52Chapter 3.5.1 --- Tuning range --- p.54Chapter 3.5.2 --- Negative gm --- p.55Chapter 3.5.3 --- Phase noise calculation --- p.56Chapter 3.5.4 --- Coupling coefficient --- p.57Chapter 3.5.5 --- Low-voltage and low-power design --- p.59Chapter 3.5.6 --- Layout Consideration --- p.61Chapter 3.5.6.1 --- Symmetrical Layout and parasitics --- p.61Chapter 3.5.6.2 --- Metal width and number of vias --- p.63Chapter 3.5.6.3 --- Substrate contact and guard ring --- p.63Chapter 3.5.7 --- Simulation Results --- p.65Chapter 3.5.7.1 --- Frequency and output power --- p.65Chapter 3.5.7.2 --- Quadrature signal generation --- p.67Chapter 3.5.7.3 --- Tuning range --- p.67Chapter 3.5.7.4 --- Power consumption --- p.68Chapter 3.5.7.5 --- Phase noise --- p.69Chapter 3.6 --- Polyphase filter and Single-sideband mixer design --- p.70Chapter 3.6.1 --- Polyphase filter --- p.72Chapter 3.6.2 --- Layout Consideration --- p.74Chapter 3.6.3 --- Simulation results --- p.76Chapter 3.7 --- Comparison with parallel-coupled QVCO --- p.78Chapter CHAPTER 4 --- EXPERIMENTAL RESULTS --- p.80Chapter 4.1 --- Test Fixture --- p.82Chapter 4.2 --- Measurement set-up --- p.84Chapter 4.3 --- Measurement results --- p.86Chapter 4.3.1 --- Proposed QVCO using back-gate superharmonic coupling --- p.86Chapter 4.3.1.1 --- Output Spectrum --- p.86Chapter 4.3.1.2 --- Tuning range --- p.87Chapter 4.3.1.3 --- Phase noise --- p.88Chapter 4.3.1.4 --- Power consumption --- p.88Chapter 4.3.1.5 --- Image-rejection ratio --- p.89Chapter 4.3.2 --- Parallel-coupled QVCO --- p.90Chapter 4.3.2.1 --- Output spectrum --- p.90Chapter 4.3.2.2 --- Power consumption --- p.90Chapter 4.3.2.3 --- Tuning range --- p.91Chapter 4.3.2.4 --- Phase noise --- p.92Chapter 4.3.3 --- Comparison between proposed and parallel-coupled QVCO --- p.93Chapter CHAPTER 5 --- CONCLUSIONS --- p.95Chapter 5.1 --- Conclusions --- p.95Chapter 5.2 --- Future work --- p.97REFERENCES --- p.9

Direct Conversion RF Front-End Implementation for Ultra-Wideband (UWB) and GSM/WCDMA Dual-Band Applications in Silicon-Based Technologies

This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical circuit block for both systems, was analyzed in terms of noise, linearity and group delay variation over an extemely wide bandwidth. Measurements are demonstrated for an energy-thrifty UWB receiver based on an MB-OFDM system covering the full FCC-allowed UWB frequency range. For multiband applications such as a GSM/WCDMA dual-band application, the design of wideband VCO and various frequency generation blocks are investigated as alternatives for implementation of direct conversion architecture. In order to reduce DC-offset and LO pulling phenomena that degrade performance in a typical direct conversion scheme, an innovative fractional LO signal generator was implemented in a standard CMOS process. A simple analysis is provided for the loop dynamics and operating range of the design as well as for the measured results of the factional LO signal generator.Ph.D.Committee Chair: Dr. Laskar, Joy; Committee Member: Dr. Cressler, John; Committee Member: Dr. Kohl, Paul; Committee Member: Dr. Papapolymerou, John; Committee Member: Dr. Scott, Waymon

Analysis of mismatch impact on image rejection ratio for passive polyphase filters

Passive polyphase filters (PPFs) are useful symmetric RC networks for processing analog quadrature signals. Passive polyphase filters are also used to implement differential-quadrature or quadrature-differential converters. The quality of these quadrature signals is essential to achieve good performance in modern communication systems. However, mismatch effects can produce notable degradation in the PPF frequency response, and this results in an important reduction in quadrature signal quality, being amplitude balance and phase offset notably affected. Both these errors could be summarized and evaluated together considering image rejection ratio as a figure of merit. This work deepens in the analysis of mismatch impact on PPF, studying image rejection ratio degradation for 2 PPF types, and a systematic method is proposed to obtain the worst case of mismatch in PPFs with any number of stages. It has been validated in a 65-nm CMOS technology

Parametric analog signal amplification applied to nanoscale cmos wireless digital transceivers

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer Engineering by the Universidade Nova de Lisboa,Faculdade de Ciências e TecnologiaSignal amplification is required in almost every analog electronic system. However noise is also present, thus imposing limits to the overall circuit performance, e.g., on the sensitivity of the radio transceiver. This drawback has triggered a major research on the field, which has been producing several solutions to achieve amplification with minimum added noise. During the Fifties, an interesting out of mainstream path was followed which was based on variable reactance instead of resistance based amplifiers. The principle of these parametric circuits permits to achieve low noise amplifiers since the controlled variations of pure reactance elements is intrinsically noiseless. The amplification is based on a mixing effect which enables energy transfer from an AC pump source to other related signal frequencies. While the first implementations of these type of amplifiers were already available at that time, the discrete-time version only became visible more recently. This discrete-time version is a promising technique since it is well adapted to the mainstream nanoscale CMOS technology. The technique itself is based on the principle of changing the surface potential of the MOS device while maintaining the transistor gate in a floating state. In order words, the voltage amplification is achieved by changing the capacitance value while maintaining the total charge unchanged during an amplification phase. Since a parametric amplifier is not intrinsically dependent on the transconductance of the MOS transistor, it does not directly suffer from the intrinsic transconductance MOS gain issues verified in nanoscale MOS technologies. As a consequence, open-loop and opamp free structures can further emerge with this additional contribution. This thesis is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. The use of the latter is supported on the presentation of several circuits where the MOS Parametric Amplifier cell is well suited: small gain amplifier, comparator, discrete-time mixer and filter, and ADC. Relatively to the latter, a high speed time-interleaved pipeline ADC prototype is implemented in a,standard 130 nm CMOS digital technology from United Microelectronics Corporation (UMC). The ADC is fully based on parametric MOS amplification which means that one could achieve a compact and MOS-only implementation. Furthermore, any high speed opamp has not been used in the signal path, being all the amplification steps implemented with open-loop parametric MOS amplifiers. To the author’s knowledge, this is first reported pipeline ADC that extensively used the parametric amplification concept.Fundação para a Ciência e Tecnologia through the projects SPEED, LEADER and IMPAC

Design of Frequency divider with voltage vontrolled oscillator for 60 GHz low power phase-locked loops in 65 nm RF CMOS

Increasing memory capacity in mobile devices, is driving the need of high-data rates equipment. The 7 GHz band around 60 GHz provides the opportunity for multi-gigabit/sec wireless communication. It is a real opportunity for developing next generation of High-Definition (HD) devices. In the last two decades there was a great proliferation of Voltage Controlled Oscillator (VCO) and Frequency Divider (FD) topologies in RF ICs on silicon, but reaching high performance VCOs and FDs operating at 60 GHz is in today's technology a great challenge. A key reason is the inaccuracy of CMOS active and passive device models at mm-W. Three critical issues still constitute research objectives at 60 GHz in CMOS: generation of the Local Oscillator (LO) signal (1), division of the LO signal for the Phase-Locked Loop (PLL) closed loop (2) and distribution of the LO signal (3). In this Thesis, all those three critical issues are addressed and experimentally faced-up: a divide-by-2 FD for a PLL of a direct-conversion transceiver operating at mm-W frequencies in 65 nm RF CMOS technology has been designed. Critical issues such as Process, Voltage and Temperature (PVT) variations, Electromagnetic (EM) simulations and power consumption are addressed to select and design a FD with high frequency dividing range. A 60 GHz VCO is co-designed and integrated in the same die, in order to provide the FD with mm-W input signal. VCOs and FDs play critical roles in the PLL. Both of them constitute the PLL core components and they would need co-design, having a big impact in the overall performance especially because they work at the highest frequency in the PLL. Injection Locking FD (ILFD) has been chosen as the optimum FD topology to be inserted in the control loop of mm-W PLL for direct-conversion transceiver, due to the high speed requirements and the power consumption constraint. The drawback of such topology is the limited bandwidth, resulting in narrow Locking Range (LR) for WirelessHDTM applications considering the impact of PVT variations. A simulation methodology is presented in order to analyze the ILFD locking state, proposing a first divide-by-2 ILFD design with continuous tuning. In order to design a wide LR, low power consumption ILFD, the impacts of various alternatives of low/high Q tank and injection scheme are deeply analysed, since the ILFD locking range depends on the Q of the tank and injection efficiency. The proposed 3-bit dual-mixing 60 GHz divide-by-2 LC-ILFD is designed with an accumulation of switching varactors binary scaled to compensate PVT variations. It is integrated in the same die with a 4-bit 60 GHz LC-VCO. The overall circuit is designed to allow measurements of the singles blocks stand-alone and working together. The co-layout is carried on with the EM modelling process of passives devices, parasitics and transmission lines extracted from the layout. The inductors models provided by the foundry are qualified up to 40 GHz, therefore the EM analysis is a must for post-layout simulation. The PVT variations have been simulated before manufacturing and, based on the results achieved, a PLL scheme PVT robust, considering frequency calibration, has been patented. The test chip has been measured in the CEA-Leti (Grenoble) during a stay of one week. The operation principle and the optimization trade-offs among power consumption, and locking ranges of the final selected ILFD topology have been demonstrated. Even if the experimental results are not completely in agreement with the simulations, due to modelling error and inaccuracy, the proposed technique has been validated with post-measurement simulations. As demonstrated, the locking range of a low-power, discrete tuned divide-by-2 ILFD can be enhanced by increasing the injection efficiency, without the drawbacks of higher power consumption and chip area. A 4-bits wide tuning range LC-VCO for mm-W applications has been co-designed using the selected 65 nm CMOS process.Postprint (published version

Digital Centric Multi-Gigabit SerDes Design and Verification

Advances in semiconductor manufacturing still lead to ever decreasing feature sizes and constantly allow higher degrees of integration in application specific integrated circuits (ASICs). Therefore the bandwidth requirements on the external interfaces of such systems on chips (SoC) are steadily growing. Yet, as the number of pins on these ASICs is not increasing in the same pace - known as pin limitation - the bandwidth per pin has to be increased. SerDes (Serializer/Deserializer) technology, which allows to transfer data serially at very high data rates of 25Gbps and more is a key technology to overcome pin limitation and exploit the computing power that can be achieved in todays SoCs. As such SerDes blocks together with the digital logic interfacing them form complex mixed signal systems, verification of performance and functional correctness is very challenging. In this thesis a novel mixed-signal design methodology is proposed, which tightly couples model and implementation in order to ensure consistency throughout the design cycles and hereby accelerate the overall implementation flow. A tool flow that has been developed is presented, which integrates well into state of the art electronic design automation (EDA) environments and enables the usage of this methodology in practice. Further, the design space of todays high-speed serial links is analyzed and an architecture is proposed, which pushes complexity into the digital domain in order to achieve robustness, portability between manufacturing processes and scaling with advanced node technologies. The all digital phase locked loop (PLL) and clock data recovery (CDR), which have been developed are described in detail. The developed design flow was used for the implementation of the SerDes architecture in a 28nm silicon process and proved to be indispensable for future projects

Shuttle synthetic aperture radar implementation study, volume 1

Results of an implementation study for a synthetic aperture radar for the space shuttle orbiter are described. The overall effort was directed toward the determination of the feasibility and usefulness of a multifrequency, multipolarization imaging radar for the shuttle orbiter. The radar is intended for earth resource monitoring as well as oceanographic and marine studies

Low Voltage Low Power Analogue Circuits Design

Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.