Monatomic phase change memory

Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strategy to finetune the properties of phase change memory materials, reaching reasonable thermal stability in optical data storage, relies on mixing precise amounts of different dopants, resulting often in quaternary or even more complicated compounds. Here we show how the simplest material imaginable, a single element (in this case, antimony), can become a valid alternative when confined in extremely small volumes. This compositional simplification eliminates problems related to unwanted deviations from the optimized stoichiometry in the switching volume, which become increasingly pressing when devices are aggressively miniaturized. Removing compositional optimization issues may allow one to capitalize on nanosize effects in information storage

Energy Saving Techniques for Phase Change Memory (PCM)

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory (PCM), which has low read latency and power; and nearly zero leakage power. However, the write latency and power of PCM are very high and this, along with limited write endurance of PCM present significant challenges in enabling wide-spread adoption of PCM. To address this, several architecture-level techniques have been proposed. In this report, we review several techniques to manage power consumption of PCM. We also classify these techniques based on their characteristics to provide insights into them. The aim of this work is encourage researchers to propose even better techniques for improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM

Phase-change memory functionality in gallium nanoparticles

We report that the structural phase of gallium nanoparticles can be switched by optical excitation and read via their cathodoluminescence (CL) when excited by a scanning electron beam. This opens a new paradigm in developing high-density phase change optical memory elements. A film of gallium nanoparticles was sputtered at the end face of an optical fiber, through which the reflectivity at 195 K was monitored by a 1.31 µm laser. By launching a single pulse from a 1.55 µm laser (17 mW, 1 µs) to the sample, a solid-to-liquid phase transition was observed as an immediate change of reflectivity from 10.0 to 10.5 %. CL spectra were measured immediately before and after the phase transition. The spectra show that gallium nanoparticles luminesce in the range of 400-650 nm, in which there at 520 nm is a 10 % difference of emission before and after the phase transition, due to a difference in optical properties. In future continuation of this first demonstration of electron beam read-out of the phase of nanoparticles, it is likely that the electron beam itself can change the phase of individual nanoparticles in the film, and that this phase furthermore can be read out at lower power by its cathode luminescence response with the same electron beam

Electrical phase change of CVD-grown Ge-Sb-Te thin film device

A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions firstly to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs

Cathodoluminescence read-out of the structural phase of gallium nanoparticles

We report on a method of phase identification of gallium nanoparticles via their cathodoluminescence when excited by a scanning electron beam. This feature can be used for high-density phase change memory element