Design-for-delay-testability techniques for high-speed digital circuits

The importance of delay faults is enhanced by the ever increasing clock rates and decreasing geometry sizes of nowadays' circuits. This thesis focuses on the development of Design-for-Delay-Testability (DfDT) techniques for high-speed circuits and embedded cores. The rising costs of IC testing and in particular the costs of Automatic Test Equipment are major concerns for the semiconductor industry. To reverse the trend of rising testing costs, DfDT is\ud getting more and more important

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Technology 2001: The Second National Technology Transfer Conference and Exposition, volume 1

Papers from the technical sessions of the Technology 2001 Conference and Exposition are presented. The technical sessions featured discussions of advanced manufacturing, artificial intelligence, biotechnology, computer graphics and simulation, communications, data and information management, electronics, electro-optics, environmental technology, life sciences, materials science, medical advances, robotics, software engineering, and test and measurement

Technology 2001: The Second National Technology Transfer Conference and Exposition, volume 2

Proceedings of the workshop are presented. The mission of the conference was to transfer advanced technologies developed by the Federal government, its contractors, and other high-tech organizations to U.S. industries for their use in developing new or improved products and processes. Volume two presents papers on the following topics: materials science, robotics, test and measurement, advanced manufacturing, artificial intelligence, biotechnology, electronics, and software engineering

Fourth NASA Goddard Conference on Mass Storage Systems and Technologies

This report contains copies of all those technical papers received in time for publication just prior to the Fourth Goddard Conference on Mass Storage and Technologies, held March 28-30, 1995, at the University of Maryland, University College Conference Center, in College Park, Maryland. This series of conferences continues to serve as a unique medium for the exchange of information on topics relating to the ingestion and management of substantial amounts of data and the attendant problems involved. This year's discussion topics include new storage technology, stability of recorded media, performance studies, storage system solutions, the National Information infrastructure (Infobahn), the future for storage technology, and lessons learned from various projects. There also will be an update on the IEEE Mass Storage System Reference Model Version 5, on which the final vote was taken in July 1994

Dielectric relaxation and frequency dependence of Hf02 doped by lanthanide elements

The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology requires the replacement of SiO2 with gate dielectrics that have a high dielectric constant (k). When the SiO2 gate thickness was reduced below 1.4 nm, electron tunneling effects and high leakage currents occurred which presented serious obstacles for the reliability issue in terms of metal-oxide-semiconductor field-effect transistor (MOSFET) devices. In recent years, various alternative gate dielectrics have been researched. Following the introduction of HfO2 into the 45 nm process by Intel in 2007, the screening and selection of high-k gate stacks, understanding their properties, and their integration into CMOS technology has been a very active research area. Frequency dispersion of high-k dielectrics was commonly observed and classified into two parts: extrinsic and intrinsic causes. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was studied. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled using a dual frequency technique. The effect of surface roughness on frequency dispersion is also investigated. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. Some of the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Other relaxation models were also introduced. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which was dependent on the structure of the high-k material. The degree of polarization was attributed to the enhancement of the correlations among polar nano-scale size domain within the materials. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain size due to its higher concentration of grain boundary

Innovative Techniques for Testing and Diagnosing SoCs

We rely upon the continued functioning of many electronic devices for our everyday welfare, usually embedding integrated circuits that are becoming even cheaper and smaller with improved features. Nowadays, microelectronics can integrate a working computer with CPU, memories, and even GPUs on a single die, namely System-On-Chip (SoC). SoCs are also employed on automotive safety-critical applications, but need to be tested thoroughly to comply with reliability standards, in particular the ISO26262 functional safety for road vehicles. The goal of this PhD. thesis is to improve SoC reliability by proposing innovative techniques for testing and diagnosing its internal modules: CPUs, memories, peripherals, and GPUs. The proposed approaches in the sequence appearing in this thesis are described as follows: 1. Embedded Memory Diagnosis: Memories are dense and complex circuits which are susceptible to design and manufacturing errors. Hence, it is important to understand the fault occurrence in the memory array. In practice, the logical and physical array representation differs due to an optimized design which adds enhancements to the device, namely scrambling. This part proposes an accurate memory diagnosis by showing the efforts of a software tool able to analyze test results, unscramble the memory array, map failing syndromes to cell locations, elaborate cumulative analysis, and elaborate a final fault model hypothesis. Several SRAM memory failing syndromes were analyzed as case studies gathered on an industrial automotive 32-bit SoC developed by STMicroelectronics. The tool displayed defects virtually, and results were confirmed by real photos taken from a microscope. 2. Functional Test Pattern Generation: The key for a successful test is the pattern applied to the device. They can be structural or functional; the former usually benefits from embedded test modules targeting manufacturing errors and is only effective before shipping the component to the client. The latter, on the other hand, can be applied during mission minimally impacting on performance but is penalized due to high generation time. However, functional test patterns may benefit for having different goals in functional mission mode. Part III of this PhD thesis proposes three different functional test pattern generation methods for CPU cores embedded in SoCs, targeting different test purposes, described as follows: a. Functional Stress Patterns: Are suitable for optimizing functional stress during I Operational-life Tests and Burn-in Screening for an optimal device reliability characterization b. Functional Power Hungry Patterns: Are suitable for determining functional peak power for strictly limiting the power of structural patterns during manufacturing tests, thus reducing premature device over-kill while delivering high test coverage c. Software-Based Self-Test Patterns: Combines the potentiality of structural patterns with functional ones, allowing its execution periodically during mission. In addition, an external hardware communicating with a devised SBST was proposed. It helps increasing in 3% the fault coverage by testing critical Hardly Functionally Testable Faults not covered by conventional SBST patterns. An automatic functional test pattern generation exploiting an evolutionary algorithm maximizing metrics related to stress, power, and fault coverage was employed in the above-mentioned approaches to quickly generate the desired patterns. The approaches were evaluated on two industrial cases developed by STMicroelectronics; 8051-based and a 32-bit Power Architecture SoCs. Results show that generation time was reduced upto 75% in comparison to older methodologies while increasing significantly the desired metrics. 3. Fault Injection in GPGPU: Fault injection mechanisms in semiconductor devices are suitable for generating structural patterns, testing and activating mitigation techniques, and validating robust hardware and software applications. GPGPUs are known for fast parallel computation used in high performance computing and advanced driver assistance where reliability is the key point. Moreover, GPGPU manufacturers do not provide design description code due to content secrecy. Therefore, commercial fault injectors using the GPGPU model is unfeasible, making radiation tests the only resource available, but are costly. In the last part of this thesis, we propose a software implemented fault injector able to inject bit-flip in memory elements of a real GPGPU. It exploits a software debugger tool and combines the C-CUDA grammar to wisely determine fault spots and apply bit-flip operations in program variables. The goal is to validate robust parallel algorithms by studying fault propagation or activating redundancy mechanisms they possibly embed. The effectiveness of the tool was evaluated on two robust applications: redundant parallel matrix multiplication and floating point Fast Fourier Transform