Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors

We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system with two back-to-back Schottky-barrier contacts. The high surface leakage current is apparently due to the presence of a low-resistivity surface layer that has characteristics which differ considerably from those of the bulk material. This surface layer has a profound effect on the charge collection efficiency in detectors with multi-contact geometry; some fraction of the electric field lines originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect we place a grid of thin electrodes between the pixel contacts; when the grid is negatively biased, the strong electric field in the gaps between the pixels forces the electrons landing on the surface to move toward the contacts, preventing the charge loss. We have investigated these effects by using CZT pixel detectors indium bump bonded to a custom-built VLSI readout chip

Single-electron current sources: towards a refined definition of ampere

Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus of research for metrological purposes. In this review we first discuss the generic physical phenomena and technical constraints that influence charge transport. We then present the broad variety of proposed realizations. Some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently "just" wild ideas, still often potentially competitive if technical constraints can be lifted. We also discuss the important issues of read-out of single-electron events and potential error correction schemes based on them. Finally, we give an account of the status of single-electron current sources in the bigger framework of electric quantum standards and of the future international SI system of units, and briefly discuss the applications and uses of single-electron devices outside the metrological context.Comment: 55 pages, 38 figures; (v2) fixed typos and misformatted references, reworded the section on AC pump

Spike detection using the continuous wavelet transform

This paper combines wavelet transforms with basic detection theory to develop a new unsupervised method for robustly detecting and localizing spikes in noisy neural recordings. The method does not require the construction of templates, or the supervised setting of thresholds. We present extensive Monte Carlo simulations, based on actual extracellular recordings, to show that this technique surpasses other commonly used methods in a wide variety of recording conditions. We further demonstrate that falsely detected spikes corresponding to our method resemble actual spikes more than the false positives of other techniques such as amplitude thresholding. Moreover, the simplicity of the method allows for nearly real-time execution

A simulation of the single scan accuracy of a two-dimensional pulsed surveillance radar

Bibliography: leaves 194-198.The following dissertation considers the single-scan two-dimensional positional accuracy of a pulsed surveillance radar. The theoretical aspects to the positional accuracy are considered and a generalized analytical approach is presented. Practical position estimators are often complex, and theoretical predictions of their performance generally yield unfriendly mathematical equations. In order to evaluate the performance of these estimators, a simulation method is described based on replicating the received video signal. The accuracy of such a simulation is determined largely by the accuracy of the models applied, and these are considered in detail. Different azimuth estimation techniques are described, and their performances are evaluated with the aid of the signal simulation. The best azimuth accuracy performance is obtained with the class of analogue processing estimators, but they are found to be more susceptible to interference than their binary processing counterparts. The class of binary processing estimators offer easily implemented techniques which are relatively insensitive to radar cross-section scintillation characteristics. A hybrid estimator, using both analogue and binary processing, is also evaluated and found to give an improved accuracy performance over the binary processing method while still maintaining the relative insensitivity to radar cross-section fluctuation

Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits

In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information-processing device invariably causes current flow and an associated dissipation. Replacing charge with the "spin" of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient "green electronics". This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term. This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation.Comment: Topical Revie

Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides

Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2, where the hetero-junctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layer. With respect to their monolayer counterparts, bilayer lateral heterostructures yield nearly one order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ~103 times larger than those extracted from the monolayers, in addition to room-temperature electroluminescence. The superior performance of bilayer heterostructures significantly expands the functionalities of 2D crystals

Towards single-electron metrology

We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications.Comment: 39 pages, 14 figures. Review paper to be published in International Journal of Modern Physics

Probability and Statistics for Particle Physicists

Lectures presented at the 1st CERN Asia-Europe-Pacific School of High-Energy Physics, Fukuoka, Japan, 14-27 October 2012. A pedagogical selection of topics in probability and statistics is presented. Choice and emphasis are driven by the author's personal experience, predominantly in the context of physics analyses using experimental data from high-energy physics detectors.Comment: Updated version of lectures given at the First Asia-Europe-Pacific School of High-Energy Physics, Fukuoka, Japan, 14-27 October 2012. Published as a CERN Yellow Report (CERN-2014-001) and KEK report (KEK-Proceedings-2013-8), K. Kawagoe and M. Mulders (eds.), 2014, p. 219. Total 28 pages, 36 figure