Benchmarking of standard-cell based memories in the sub-VT domain in 65-nm CMOS technology

In this paper, standard-cell based memories (SCMs) are proposed as an alternative to full-custom sub-VT SRAM macros for ultra-low-power systems requiring small memory blocks. The energy per memory access as well as the maximum achievable throughput in the sub-VT domain of various SCM architectures are evaluated by means of a gate-level sub-VT characterization model, building on data extracted from fully placed, routed, and back-annotated netlists. The reliable operation at the energy-minimum voltage of the various SCM architectures in a 65-nm CMOS technology considering within-die process parameter variations is demonstrated by means of Monte Carlo circuit simulation. Finally, the energy per memory access, the achievable throughput, and the area of the best SCM architecture are compared to recent sub-VT SRAM designs

Architecting SkyBridge-CMOS

As the scaling of CMOS approaches fundamental limits, revolutionary technology beyond the end of CMOS roadmap is essential to continue the progress and miniaturization of integrated circuits. Recent research efforts in 3-D circuit integration explore pathways of continuing the scaling by co-designing for device, circuit, connectivity, heat and manufacturing challenges in a 3-D fabric-centric manner. SkyBridge fabric is one such approach that addresses fine-grained integration in 3-D, achieves orders of magnitude benefits over projected scaled 2-D CMOS, and provides a pathway for continuing scaling beyond 2-D CMOS. However, SkyBridge fabric utilizes only single type transistors in order to reduce manufacture complexity, which limits its circuit implementation to dynamic logic. This design choice introduces multiple challenges for SkyBridge such as high switching power consumption, susceptibility to noise, and increased complexity for clocking. In this thesis we propose a new 3-D fabric, similar in mindset to SkyBridge, but with static logic circuit implementation in order to mitigate the afore-mentioned challenges. We present an integrated framework to realize static circuits with vertical nanowires, and co-design it across all layers spanning fundamental fabric structures to large circuits. The new fabric, named as SkyBridge-CMOS, introduces new technology, structures and circuit designs to meet the additional requirements for implementing static circuits. One of the critical challenges addressed here is integrating both n-type and p-type nanowires. Molecular bonding process allows precise control between different doping regions, and novel fabric components are proposed to achieve 3-D routing between various doping regions. Core fabric components are designed, optimized and modeled with their physical level information taken into account. Based on these basic structures we design and evaluate various logic gates, arithmetic circuits and SRAM in terms of power, area footprint and delay. A comprehensive evaluation methodology spanning material/device level to circuit level is followed. Benchmarking against 16nm 2-D CMOS shows significant improvement of up to 50X in area footprint and 9.3X in total power efficiency for low power applications, and 3X in throughput for high performance applications. Also, better noise resilience and better power efficiency can be guaranteed when compared with original SkyBridge fabrics

Low Power CMOS Design : Exploring Radiation Tolerance in a 90 nm Low Power Commercial Process

This thesis aims to examine radiation tolerance of low power digital CMOS circuits in a commercial 90 nm low power triple-well process from TSMC. By combining supply voltage scaling and Radiation-Hardened By Design (RHBD) design techniques, the goal is to achieve low supply voltage, radiation tolerant, circuit behavior. The target circuit architecture for comparison between different radiation hardening techniques is a Successive Approximation Register (SAR) architecture comprising both combinational and sequential logic. The purpose of the SAR architecture is to emulate a larger system, since larger systems are usually composed of combinational and sequential building blocks. The method used for achieving low power operation is primarily voltage scaling, with the ultimate goal of reaching subthreshold operation, while maintaining radiation tolerant circuit behavior. Radiation hardening is performed on circuit-level by applying RHBD circuit topologies, as well as architectural-level mitigation techniques. This thesis includes three papers within the field of robust low power CMOS design. Two of the papers cover low power level shifter designs in 90 nm and 65 nm process from STMicroelectronics. The third paper examines memory element design using minority-3 gates and inverters for robust low voltage operation. Prototyping has been conducted on low power CMOS building blocks including level shifter and memory design, for potential use in future radiation tolerant designs. Prototyping has been conducted on two chips from two different 90 nm processes from STMicroelectronics and TSMC. A test setup for radiation induced errors has been developed. Experimental radiation tests of the SAR architectures were conducted at SAFE, revealing no radiation induced errors

The Integration of nearthreshold and subthreshold CMOS logic for energy minimization

With the rapid growth in the use of portable electronic devices, more emphasis has recently been placed on low-energy circuit design. Digital subthreshold complementary metal-oxide-semiconductor (CMOS) circuit design is one area of study that offers significant energy reduction by operating at a supply voltage substantially lower than the threshold voltage of the transistor. However, these energy savings come at a critical cost to performance, restricting its use to severely energy-constrained applications such as microsensor nodes. In an effort to mitigate this performance degradation in low-energy designs, nearthreshold circuit design has been proposed and implemented in digital circuits such as Intel\u27s energy-efficient hardware accelerator. The application spectrum of nearthreshold and subthreshold design could be broadened by integrating these cells into high-performance designs. This research focuses on the integration of characterized nearthreshold and subthreshold standard cells into high-performance functional modules. Within these functional modules, energy minimization is achieved while satisfying performance constraints by replacing non-critical path logic with nearthreshold and subthreshold logic cells. Specifically, the critical path method is used to bind the timing and energy constraints of the design. The design methodology was verified and tested with several benchmark circuits, including a cryptographic hash function, Skein. An average energy savings of 41.15% was observed at a circuit performance degradation factor of 10. The energy overhead of the level shifters accounted for at least 8.5% of the energy consumption of the optimized circuit, with an average energy overhead of 26.76%. A heuristic approach is developed for estimating the energy savings of the optimized design

Design and Characterization of Standard Cell Library using FinFETs

The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor\u27s breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling and short channel effects. FinFET devices are reported to have excellent control over short channel effects, high On/Off Ratio, extremely low gate leakage current and relative immunization over gate edge line roughness. Sub 20 nm node size is perceived to be the limit of scaling the CMOS transistors, but FinFETs can be scaled down further because of its unique design. Due to these advantages, the VLSI industry has now shifted to FinFET in implementation of their designs. However, these transistors have not been completely opened to academia. Analyzing and observing the effects of these devices can be pivotal in gaining an in-depth understanding of them. This thesis explores the implementation of FinFETs using a standard cell library designed using these transistors. The FinFET package file used to design these cells is a 15nm FinFET technology file developed by NCSU in collaboration with Cadence and Mentor Graphics. Post design, the cells were characterized, the results were analyzed and compared with cells designed using CMOS transistors at different node sizes to understand and extrapolate conclusions on FinFET devices

Design and Optimization for Resilient Energy Efficient Computing

Heutzutage sind moderne elektronische Systeme ein integraler Bestandteil unseres Alltags. Dies wurde unter anderem durch das exponentielle Wachstum der Integrationsdichte von integrierten Schaltkreisen ermöglicht zusammen mit einer Verbesserung der Energieeffizienz, welche in den letzten 50 Jahren stattfand, auch bekannt als Moore‘s Gesetz. In diesem Zusammenhang ist die Nachfrage von energieeffizienten digitalen Schaltkreisen enorm angestiegen, besonders in Anwendungsfeldern wie dem Internet of Things (IoT). Da der Leistungsverbrauch von Schaltkreisen stark mit der Versorgungsspannung verknüpft ist, wurden effiziente Verfahren entwickelt, welche die Versorgungsspannung in den nahen Schwellenspannung-Bereich skalieren, zusammengefasst unter dem Begriff Near-Threshold-Computing (NTC). Mithilfe dieser Verfahren kann eine Erhöhung der Energieeffizienz von Schaltungen um eine ganze Größenordnung ermöglicht werden. Neben der verbesserten Energiebilanz ergeben sich jedoch zahlreiche Herausforderungen was den Schaltungsentwurf angeht. Zum Beispiel führt das Reduzieren der Versorgungsspannung in den nahen Schwellenspannungsbereich zu einer verzehnfachten Erhöhung der Sensibilität der Schaltkreise gegenüber Prozessvariation, Spannungsfluktuationen und Temperaturveränderungen. Die Einflüsse dieser Variationen reduzieren die Zuverlässigkeit von NTC Schaltkreisen und sind ihr größtes Hindernis bezüglich einer umfassenden Nutzung. Traditionelle Ansätze und Methoden aus dem nominalen Spannungsbereich zur Kompensation von Variabilität können nicht effizient angewandt werden, da die starken Performance-Variationen und Sensitivitäten im nahen Schwellenspannungsbereich dessen Kapazitäten übersteigen. Aus diesem Grund sind neue Entwurfsparadigmen und Entwurfsautomatisierungskonzepte für die Anwendung von NTC erforderlich. Das Ziel dieser Arbeit ist die zuvor erwähnten Probleme durch die Bereitstellung von ganzheitlichen Methoden zum Design von NTC Schaltkreisen sowie dessen Entwurfsautomatisierung anzugehen, welche insbesondere auf der Schaltungs- sowie Logik-Ebene angewandt werden. Dabei werden tiefgehende Analysen der Zuverlässigkeit von NTC Systemen miteinbezogen und Optimierungsmethoden werden vorgeschlagen welche die Zuverlässigkeit, Performance und Energieeffizienz verbessern. Die Beiträge dieser Arbeit sind wie folgt: Schaltungssynthese und Timing Closure unter Einbezug von Variationen: Das Einhalten von Anforderungen an das zeitliche Verhalten und Zuverlässigkeit von NTC ist eine anspruchsvolle Aufgabe. Die Auswirkungen von Variabilität kommen bei starken Performance-Schwankungen, welche zu teuren zeitlichen Sicherheitsmargen führen, oder sich in Hold-Time Verstößen ausdrücken, verursacht durch funktionale Störungen, zum Vorschein. Die konventionellen Ansätze beschränken sich dabei alleine auf die Erhöhung von zeitlichen Sicherheitsmargen. Dies ist jedoch sehr ineffizient für NTC, wegen dem starken Ausmaß an Variationen und den erhöhten Leckströmen. In dieser Arbeit wird ein Konzept zur Synthese und Timing Closure von Schaltkreisen unter Variationen vorgestellt, welches sowohl die Sensitivität gegenüber Variationen reduziert als auch die Energieeffizienz, Performance und Zuverlässigkeit verbessert und zugleich den Mehraufwand von Timing Closures [1, 2] verringert. Simulationsergebnisse belegen, dass unser vorgeschlagener Ansatz die Verzögerungszeit um 87% reduziert und die Performance und Energieeffizienz um 25% beziehungsweise 7.4% verbessert, zu Kosten eines erhöhten Flächenbedarfs von 4.8%. Schichtübergreifende Zuverlässigkeits-, Energieeffizienz- und Performance-Optimierung von Datenpfaden: Schichtübergreifende Analyse von Prozessor-Datenpfaden, welche den ganzen Weg spannen vom Kompilierer zum Schaltungsentwurf, kann potenzielle Optimierungsansätze aufzeigen. Ein Datenpfad ist eine Kombination von mehreren funktionalen Einheiten, welche diverse Instruktionen verarbeiten können. Unsere Analyse zeigt, dass die Ausführungszeiten von Instruktionen bei niedrigen Versorgungsspannungen stark variieren, weshalb eine Klassifikation in schnelle und langsame Instruktionen vorgenommen werden kann. Des Weiteren können funktionale Instruktionen als häufig und selten genutzte Instruktionen kategorisiert werden. Diese Arbeit stellt eine Multi-Zyklen-Instruktionen-Methode vor, welche die Energieeffizienz und Belastbarkeit von funktionalen Einheiten erhöhen kann [3]. Zusätzlich stellen wir einen Partitionsalgorithmus vor, welcher ein fein-granulares Power-gating von selten genutzten Einheiten ermöglicht [4] durch Partition von einzelnen funktionalen Einheiten in mehrere kleinere Einheiten. Die vorgeschlagenen Methoden verbessern das zeitliche Schaltungsverhalten signifikant, und begrenzen zugleich die Leckströme beträchtlich, durch Einsatz einer Kombination von Schaltungs-Redesign- und Code-Replacement-Techniken. Simulationsresultate zeigen, dass die entwickelten Methoden die Performance und Energieeffizienz von arithmetisch-logischen Einheiten (ALU) um 19% beziehungsweise 43% verbessern. Des Weiteren kann der Zuwachs in Performance der optimierten Schaltungen in eine Verbesserung der Zuverlässigkeit umgewandelt werden [5, 6]. Post-Fabrication und Laufzeit-Tuning: Prozess- und Laufzeitvariationen haben einen starken Einfluss auf den Minimum Energy Point (MEP) von NTC-Schaltungen, welcher mit der energieeffizientesten Versorgungsspannung assoziiert ist. Es ist ein besonderes Anliegen, die NTC-Schaltung nach der Herstellung (post-fabrication) so zu kalibrieren, dass sich die Schaltung im MEP-Zustand befindet, um die beste Energieeffizient zu erreichen. In dieser Arbeit, werden Post-Fabrication und Laufzeit-Tuning vorgeschlagen, welche die Schaltung basierend auf Geschwindigkeits- und Leistungsverbrauch-Messungen nach der Herstellung auf den MEP kalibrieren. Die vorgestellten Techniken ermitteln den MEP per Chip-Basis um den Einfluss von Prozessvariationen mit einzubeziehen und dynamisch die Versorgungsspannung und Frequenz zu adaptieren um zeitabhängige Variationen wie Workload und Temperatur zu adressieren. Zu diesem Zweck wird in die Firmware eines Chips ein Regression-Modell integriert, welches den MEP basierend auf Workload- und Temperatur-Messungen zur Laufzeit extrahiert. Das Regressions-Modell ist für jeden Chip einzigartig und basiert lediglich auf Post-Fabrication-Messungen. Simulationsergebnisse zeigen das der entwickelte Ansatz eine sehr hohe prognostische Treffsicherheit und Energieeffizienz hat, ähnlich zu hardware-implementierten Methoden, jedoch ohne hardware-seitigen Mehraufwand [7, 8]. Selektierte Flip-Flop Optimierung: Ultra-Low-Voltage Schaltungen müssen im nominalen Versorgungsspannungs-Mode arbeiten um zeitliche Anforderungen von laufenden Anwendungen zu erfüllen. In diesem Fall ist die Schaltung von starken Alterungsprozessen betroffen, welche die Transistoren durch Erhöhung der Schwellenspannungen degradieren. Unsere tiefgehenden Analysen haben gezeigt das gewisse Flip-Flop-Architekturen von diesen Alterungserscheinungen beeinflusst werden indem fälschlicherweise konstante Werte ( \u270\u27 oder \u271\u27) für eine lange Zeit gespeichert sind. Im Vergleich zu anderen Komponenten sind Flip-Flops sensitiver zu Alterungsprozessen und versagen unter anderem dabei einen neuen Wert innerhalb des vorgegebenen zeitlichen Rahmens zu übernehmen. Außerdem kann auch ein geringfügiger Spannungsabfall zu diesen zeitlichen Verstößen führen, falls die betreffenden gealterten Flip-Flops zum kritischen Pfad zuzuordnen sind. In dieser Arbeit wird eine selektiver Flip-Flop-Optimierungsmethode vorgestellt, welche die Schaltungen bezüglich Robustheit gegen statische Alterung und Spannungsabfall optimieren. Dabei werden zuerst optimierte robuste Flip-Flops generiert und diese dann anschließend in die Standard-Zellen-Bibliotheken integriert. Flip-Flops, die in der Schaltung zum kritischen Pfad gehören und Alterung sowie Spannungsabfall erfahren, werden durch die optimierten robusten Versionen ersetzt, um das Zeitverhalten und die Zuverlässigkeit der Schaltung zu verbessern [9, 10]. Simulationsergebnisse zeigen, dass die erwartete Lebenszeit eines Prozessors um 37% verbessert werden kann, während Leckströme um nur 0.1% erhöht werden. Während NTC das Potenzial hat große Energieeffizienz zu ermöglichen, ist der Einsatz in neue Anwendungsfeldern wie IoT wegen den zuvor erwähnten Problemen bezüglich der hohen Sensitivität gegenüber Variationen und deshalb mangelnder Zuverlässigkeit, noch nicht durchsetzbar. In dieser Dissertation und in noch nicht publizierten Werken [11–17], stellen wir Lösungen zu diesen Problemen vor, die eine Integration von NTC in heutige Systeme ermöglichen

Variation-Tolerant and Voltage-Scalable Integrated Circuits Design

Ultra-low-voltage (ULV) operation where the supply voltage of the digital computing hardware is scaled down to the level near or below transistor threshold voltage (e.g. 300-500mV) is a key technique to achieve high computing energy efficiency. It has enabled many new exciting applications in the field of Internet of Things (IoT) devices and energy-constrained applications such as medical implants, environment sensors, and micro-robots. Ultra-low-voltage (ULV) operation is also commonly used with the emerging architectures that are often non Von-Neumann style to empower energy-efficient cognitive computing. One the biggest challenge in realizing ULV design is the large circuit delay variability. To guarantee functionality in the worst-case process, voltage, and temperature (PVT) condition, the traditional safety margin approach requires operating at a slower clock frequency or higher supply voltage which significantly limits the achievable energy efficiency of the hardware. To fully claim the energy efficiency of ULV, the large circuit delay variation needs to be adaptively handled. However, the existing adaptive techniques that are optimized for nominal supply voltage operation and traditional Von-Neumann architectures become inefficient for ULV designs and emerging architectures. This thesis presents adaptive techniques based on timing error detection and correction (EDAC) that are more suitable for the energy-constrained ULV designs and the emerging architectures. The proposed techniques are demonstrated in three test chips: (1) R-Processor: A 0.4V resilient processor with a voltage-scalable and low-overhead in-situ EDAC technique. It achieves 38% energy efficiency improvement or 2.3X throughput improvement as compared to the traditional safety margin approach. (2) A 450mV timing-margin-free waveform sorter for brain computer interface (BCI) microsystem. It achieves 49.3% higher energy efficiency and 35.6% higher throughput than the traditional safety margin approach. (3) Ultra-low-power and robust power-management system which consists of a microprocessor employing ULV EDAC, 63-ratio integrated switched-capacitor DC-DC converter, and a fully-digital error based regulation controller. In this thesis, we also explore circuits for emerging techniques. The first is temperature sensors for dynamic-thermal-management (DTM). The modern high-performance microprocessors suffer from ever-increasing power densities which has led to reliability concerns and increased cooling costs from excessive heat. In order to monitor and manage the thermal behavior, DTM techniques embed multiple temperature sensors and use its information. The size, accuracy, and voltage-scalability of the sensor are critical for the performance of DTM. Therefore, we propose a temperature sensor that directly senses transistor threshold voltage and the test chip demonstrates 9X smaller area, 3X higher accuracy, and 200mV lower voltage scalability (down to 400mV) than the previous state-of-art. Another area of exploration is interconnect design for ultra-dynamic-voltage-scaling (UDVS) systems. UDVS has been proposed for applications that require both high performance and high energy efficiency. UDVS can provide peak performance with nominal supply voltage when work load is high. When work load is moderate or low, UDVS systems can switch to ULV operation for higher energy efficiency. One of the critical challenges for developing UDVS systems is the inflexibility in various circuit fabrics that are often optimized for a single supply voltage. One critical example is conventional repeater based long interconnects which suffers from non-optimal performance and energy efficiency in UDVS systems. Therefore, in this thesis, we propose a reconfigurable interconnect design based on regenerators and demonstrate near optimal performance and energy efficiency across the supply voltage of 0.3V and 1V

Ultra-Low Leakage, Energy-Efficient Digital Integrated Circuit and System Design

The advances of the complementary metal-oxide-semiconductor (CMOS) technology manufacturing and design over the years have enabled a diverse range of applications across the power consumption, performance, and area (PPA) spectra. Many of the recent and prospective applications rely on the availability of energy-autonomous, miniaturized systems, i.e., ultra-low power (ULP) VLSI systems, which are generally characterized by extreme resource limitations. Some examples of applications are wireless sensing platforms, body-area sensor networks (BASN), biomedical and implantable devices, wearables, hearables, and monitors. Within the context of such applications, the key requirements are long lifetime and miniaturized size (sub-/millimeter-scale). In order to enable both requirements, energy-efficiency is the key metric. It allows for extended battery lifetime and operation with the energy that can be harvested from the environment, and it limits the size (volume) of the energy sources utilized to power these systems. Ultra-low voltage (ULV) operation is a key technique in which the VDD of circuits is reduced from nominal to near or below the threshold voltage of the transistor. It is a powerful knob that has been largely exploited by designers in order to achieve ultra-low power consumption and high energy-efficiency in CMOS. Existing ULP VLSI systems typically operate at a lower supply voltage thereby reducing their energy consumption by one to two orders of magnitude in order to enable the aforementioned applications. While supply voltage scaling is a promising measure for achieving low power and reducing energy consumption, it brings up several challenges. One critical issue is the leakage energy dissipated by the devices, which is magnified in portion to the total energy consumption at ULV. The reason is that, as VDD scales from nominal to near-threshold and sub-threshold, transistors become increasingly slower and they accumulate more leakage (i.e., static) power over longer cycle times. This energy waste accounts for a significant portion of the system's total energy consumption, offsets the gains provided by voltage scaling, defines the minimum energy per operation, and poses a practical limit for the system's energy-efficiency. This thesis presents selected research works on ultra-low leakage, energy-efficient digital integrated circuit design. More specifically, it describes novel and key techniques for minimizing the energy waste of idle/underutilized and always-on hardware. The main goal of such techniques is to push the envelope of energy-efficiency in energy-autonomous, miniaturized VLSI systems. Such techniques are applied to key building blocks of emerging mobile and embedded computing devices resulting in state-of-the-art energy-efficiencies

Circuits and Systems Advances in Near Threshold Computing

Modern society is witnessing a sea change in ubiquitous computing, in which people have embraced computing systems as an indispensable part of day-to-day existence. Computation, storage, and communication abilities of smartphones, for example, have undergone monumental changes over the past decade. However, global emphasis on creating and sustaining green environments is leading to a rapid and ongoing proliferation of edge computing systems and applications. As a broad spectrum of healthcare, home, and transport applications shift to the edge of the network, near-threshold computing (NTC) is emerging as one of the promising low-power computing platforms. An NTC device sets its supply voltage close to its threshold voltage, dramatically reducing the energy consumption. Despite showing substantial promise in terms of energy efficiency, NTC is yet to see widescale commercial adoption. This is because circuits and systems operating with NTC suffer from several problems, including increased sensitivity to process variation, reliability problems, performance degradation, and security vulnerabilities, to name a few. To realize its potential, we need designs, techniques, and solutions to overcome these challenges associated with NTC circuits and systems. The readers of this book will be able to familiarize themselves with recent advances in electronics systems, focusing on near-threshold computing