5,034 research outputs found

    Functional Nanomaterials and Polymer Nanocomposites: Current Uses and Potential Applications

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    This book covers a broad range of subjects, from smart nanoparticles and polymer nanocomposite synthesis and the study of their fundamental properties to the fabrication and characterization of devices and emerging technologies with smart nanoparticles and polymer integration

    Reaching the Edge of the Edge: Image Analysis in Space

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    Satellites have become more widely available due to the reduction in size and cost of their components. As a result, there has been an advent of smaller organizations having the ability to deploy satellites with a variety of data-intensive applications to run on them. One popular application is image analysis to detect, for example, land, ice, clouds, etc. for Earth observation. However, the resource-constrained nature of the devices deployed in satellites creates additional challenges for this resource-intensive application. In this paper, we present our work and lessons-learned on building an Image Processing Unit (IPU) for a satellite. We first investigate the performance of a variety of edge devices (comparing CPU, GPU, TPU, and VPU) for deep-learning-based image processing on satellites. Our goal is to identify devices that can achieve accurate results and are flexible when workload changes while satisfying the power and latency constraints of satellites. Our results demonstrate that hardware accelerators such as ASICs and GPUs are essential for meeting the latency requirements. However, state-of-the-art edge devices with GPUs may draw too much power for deployment on a satellite. Then, we use the findings gained from the performance analysis to guide the development of the IPU module for an upcoming satellite mission. We detail how to integrate such a module into an existing satellite architecture and the software necessary to support various missions utilizing this module

    Diagnostics of ion generation and fluxes from cathodic arc spots for a better understanding of energetic deposition of thin films

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    This thesis is devoted to the investigation of ion generation and fluxes from cathodic arc spots for a better understanding of energetic deposition of thin film. The ion generation is related to the arc spot properties, and ion fluxes influence the film deposition. Significantly, the cathodic arc has the explosion characteristic for the ignition process, which is the generation process of ions. Thus, it is not easy to observe the spot characteristics, and some fundamental questions related to cathodic arc spot motion are still open. The multiply charged ions produced from the arc spot ignition process have a higher ion potential energy than ions of other deposition techniques; therefore, consideration of the effect of ion potential energy on film growth is required for the cathodic arc technique. The first part of this thesis deals with fundamental arc spot characteristics, especially the trend of spot motion in a magnetically steered arc source placed in vacuum or in a reactive gas atmosphere. This is investigated with a streak camera having high spatial and temporal resolutions. To answer the fundamental question of whether the spots have characteristic times, such as a 'periodic spot lifetime' or a 'the periodic characteristic time between spot ignitions”, the streak images were analyzed by fast Fourier transformation (FFT). It was found that the power spectrum of the arc spot fluctuations does not show any specific frequencies, which means the arc spot ignition process can be described by a fractal model, and the spectral slope in the log-log power-frequency diagram has a tendency to be reduced in the presence of a compound (for example oxide or nitride) layer on the cathode surface. Through the fractal analysis and measurements of optical emission spectroscopy, the fundamental limitation of the temporal resolution for the optical emission method is determined and considered. The second part of this thesis considers cathodic arc’s application aspects: the energetic deposition of thin films and coatings. Most studies related to energetic deposition have previously investigated the effects of ion kinetic energy on film deposition; however, this thesis focuses on the effects of ion potential energy on film growth. To investigate the effect of ion potential energy on film growth, plasma diagnostic by energy-resolved mass spectrometry and deposited film characterization by XRD, XRR, AFM, profilometry and SEM were carried out. The ion potential energy influences the preferential direction of film growth or a polycrystalline growth in the case of aluminum deposition. This result could be a starting point for further research into the effect of ion potential energy on film deposition

    Mechanical characterization, constitutive modeling and applications of ultra-soft magnetorheological elastomers

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    Mención Internacional en el título de doctorSmart materials are bringing sweeping changes in the way humans interact with engineering devices. A myriad of state-of-the-art applications are based on novel ways to actuate on structures that respond under different types of stimuli. Among them, materials that respond to magnetic fields allow to remotely modify their mechanical properties and macroscopic shape. Ultra-soft magnetorheological elastomers (MREs) are composed of a highly stretchable soft elastomeric matrix in the order of 1 kPa and magnetic particles embedded in it. This combination allows large deformations with small external actuations. The type of the magnetic particles plays a crucial role as it defines the reversibility or remanence of the material magnetization. According to the fillers used, MREs are referred to as soft-magnetic magnetorheological elastomers (sMREs) and hard-magnetic magnetorheological elastomers (hMREs). sMREs exhibit strong changes in their mechanical properties when an external magnetic field is applied, whereas hMREs allow sustained magnetic effects along time and complex shape-morphing capabilities. In this regard, end-of-pipe applications of MREs in the literature are based on two major characteristics: the modification of their mechanical properties and macrostructural shape changes. For instance, smart actuators, sensors and soft robots for bioengineering applications are remotely actuated to perform functional deformations and autonomous locomotion. In addition, hMREs have been used for industrial applications, such as damping systems and electrical machines. From the analysis of the current state of the art, we identified some impediments to advance in certain research fields that may be overcome with new solutions based on ultrasoft MREs. On the mechanobiology area, we found no available experimental methodologies to transmit complex and dynamic heterogeneous strain patterns to biological systems in a reversible manner. To remedy this shortcoming, this doctoral research proposes a new mechanobiology experimental setup based on responsive ultra-soft MRE biological substrates. Such an endeavor requires deeper insights into the magneto-viscoelastic and microstructural mechanisms of ultra-soft MREs. In addition, there is still a lack of guidance for the selection of the magnetic fillers to be used for MREs and the final properties provided to the structure. Eventually, the great advances on both sMREs and hMREs to date pose a timely question on whether the combination of both types of particles in a hybrid MRE may optimize the multifunctional response of these active structures. To overcome these roadblocks, this thesis provides an extensive and comprehensive experimental characterization of ultra-soft sMREs, hMREs and hybrid MREs. The experimental methodology uncovers magneto-mechanical rate dependences under numerous loading and manufacturing conditions. Then, a set of modeling frameworks allows to delve into such mechanisms and develop three ground-breaking applications. Therefore, the thesis has lead to three main contributions. First and motivated on mechanobiology research, a computational framework guides a sMRE substrate to transmit complex strain patterns in vitro to biological systems. Second, we demonstrate the ability of remanent magnetic fields in hMREs to arrest cracks propagations and improve fracture toughness. Finally, the combination of soft- and hard-magnetic particles is proved to enhance the magnetorheological and magnetostrictive effects, providing promising results for soft robotics.Los materiales inteligentes están generando cambios radicales en la forma que los humanos interactúan con dispositivos ingenieriles. Distintas aplicaciones punteras se basan en formas novedosas de actuar sobre materiales que responden a diferentes estímulos. Entre ellos, las estructuras que responden a campos magnéticos permiten la modificación de manera remota tanto de sus propiedades mecánicas como de su forma. Los elastómeros magnetorreológicos (MREs) ultra blandos están compuestos por una matriz elastomérica con gran ductilidad y una rigidez en torno a 1 kPa, reforzada con partículas magnéticas. Esta combinación permite inducir grandes deformaciones en el material mediante la aplicación de campos magnéticos pequeños. La naturaleza de las partículas magnéticas define la reversibilidad o remanencia de la magnetización del material compuesto. De esta manera, según el tipo de partículas que contengan, los MREs pueden presentar magnetización débil (sMRE) o magnetización fuerte (hMRE). Los sMREs experimentan grandes cambios en sus propiedades mecánicas al aplicar un campo magnético externo, mientras que los hMREs permiten efectos magneto-mecánicos sostenidos a lo largo del tiempo, así como programar cambios de forma complejos. En este sentido, las aplicaciones de los MREs se basan en dos características principales: la modificación de sus propiedades mecánicas y los cambios de forma macroestructurales. Por ejemplo, los campos magnéticos pueden emplearse para inducir deformaciones funcionales en actuadores y sensores inteligentes, o en robótica blanda para bioingeniería. Los hMREs también se han aplicado en el ámbito industrial en sistemas de amortiguación y máquinas eléctricas. A partir del análisis del estado del arte, se identifican algunas limitaciones que impiden el avance en ciertos campos de investigación y que podrían resolverse con nuevas soluciones basadas en MREs ultra blandos. En el área de la mecanobiología, no existen metodologías experimentales para transmitir patrones de deformación complejos y dinámicos a sistemas biológicos de manera reversible. En esta investigación doctoral se propone una configuración experimental novedosa basada en sustratos biológicos fabricados con MREs ultra blandos. Dicha solución requiere la identificación de los mecanismos magneto-viscoelásticos y microestructurales de estos materiales, según el tipo de partículas magnéticas, y las consiguientes propiedades macroscópicas del material. Además, investigaciones recientes en sMREs y hMREs plantean la pregunta sobre si la combinación de distintos tipos de partículas magnéticas en un MRE híbrido puede optimizar su respuesta multifuncional. Para superar estos obstáculos, la presente tesis proporciona una caracterización experimental completa de sMREs, hMREs y MREs híbridos ultra blandos. Estos resultados muestran las dependencias del comportamiento multifuncional del material con la velocidad de aplicación de cargas magneto-mecánicas. El desarrollo de un conjunto de modelos teórico-computacionales permite profundizar en dichos mecanismos y desarrollar aplicaciones innovadoras. De este modo, la tesis doctoral ha dado lugar a tres bloques de aportaciones principales. En primer lugar, este trabajo proporciona un marco computacional para guiar el diseño de sustratos basados en sMREs para transmitir patrones de deformación complejos in vitro a sistemas biológicos. En segundo lugar, se demuestra la capacidad de los campos magnéticos remanentes en los hMRE para detener la propagación de grietas y mejorar la tenacidad a la fractura. Finalmente, se establece que la combinación de partículas magnéticas de magnetización débil y fuerte mejora el efecto magnetorreológico y magnetoestrictivo, abriendo nuevas posibilidades para el diseño de robots blandos.I want to acknowledge the support from the Ministerio de Ciencia, Innovación y Universidades, Spain (FPU19/03874), and the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement No. 947723, project: 4D-BIOMAP).Programa de Doctorado en Ingeniería Mecánica y de Organización Industrial por la Universidad Carlos III de MadridPresidente: Ramón Eulalio Zaera Polo.- Secretario: Abdón Pena Francesch.- Vocal: Laura de Lorenzi

    Investigation into Photon Emissions as a Side-Channel Leakage in Two Microcontrollers: A Focus on SRAM Blocks

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    Microcontrollers are extensively utilized across a diverse range of applications. However, with the escalating usage of these devices, the risk to their security and the valuable data they process correspondingly intensifies. These devices could potentially be susceptible to various security threats, with side channel leakage standing out as a notable concern. Among the numerous types of side-channel leakages, photon emissions from active devices emerge as a potentially significant concern. These emissions, a characteristic of all semiconductor devices including microcontrollers, occur during their operation. Depending on the operating point and the internal state of the chip, these emissions can reflect the device’s internal operations. Therefore, a malicious individual could potentially exploit these emissions to gain insights into the computations being performed within the device. This dissertation delves into the investigation of photon emissions from the SRAM blocks of two distinct microcontrollers, utilizing a cost-effective setup. The aim is to extract information from these emissions, analyzing them as potential side-channel leakage points. In the first segment of the study, a PIC microcontroller variant is investigated. The quiescent photon emissions from the SRAM are examined. A correlation attack was successfully executed on these emissions, which led to the recovery of the AES encryption key. Furthermore, differential analysis was used to examine the location of SRAM bits. The combination of this information with the application of an image processing method, namely the Structural Similarity Index (SSIM), assisted in revealing the content of SRAM cells from photon emission images. The second segment of this study, for the first time, emphasizes on a RISC-V chip, examining the photon emissions of the SRAM during continuous reading. Probing the photon emissions from the row and column detectors led to the identification of a target word location, which is capable of revealing the AES key. Also, the content of target row was retrieved through the photon emissions originating from the drivers and the SRAM cells themselves. Additionally, the SSIM technique was utilized to determine the address of a targeted word in RISC-V photon emissions which cannot be analyzed through visual inspection. The insights gained from this research contribute to a deeper understanding of side-channel leakage via photon emissions and demonstrate its potential potency in extracting critical information from digital devices. Moreover, this information significantly contributes to the development of innovative security measures, an aspect becoming increasingly crucial in our progressively digitized world

    Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources

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    Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications. Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m. However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time. This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design. The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed. To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis. In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications

    Assembling Single RbCs Molecules with Optical Tweezers

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    Optical tweezer arrays are useful tools for manipulating single atoms and molecules. An exciting avenue for research with optical tweezers is using the interactions between polar molecules for quantum computation or quantum simulation. Molecules can be assembled in an optical tweezer array starting from pairs of atoms. The atoms must be initialised in the relative motional ground state of a common trap. This work outlines the design of a Raman sideband cooling protocol which is implemented to prepare an 87-Rubidium atom in the motional ground state of an 817 nm tweezer, and a 133-Caesium atom in the motional ground state of a 938 nm tweezer. The protocol circumvents strong heating and dephasing associated with the trap by operating at lower trap depths and cooling from outside the Lamb-Dicke regime. By analysing several sources of heating, we design and implement a merging sequence that transfers the Rb atom and the Cs atom to a common trap with minimal motional excitation. Subsequently, we perform a detailed characterisation of AC Stark shifts caused by the tweezer light, and identify several situations in which the confinement of the atom pair influences their interactions. Then, we demonstrate the preparation of a molecular bound state after an adiabatic ramp across a magnetic Feshbach resonance. Measurements of molecular loss rates provide evidence that the atoms are in fact associated during the merging sequence, before the magnetic field ramp. By preparing a weakly-bound molecule in an optical tweezer, we carry out important steps towards assembling an array of ultracold RbCs molecules in their rovibrational ground states

    Analog Photonics Computing for Information Processing, Inference and Optimisation

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    This review presents an overview of the current state-of-the-art in photonics computing, which leverages photons, photons coupled with matter, and optics-related technologies for effective and efficient computational purposes. It covers the history and development of photonics computing and modern analogue computing platforms and architectures, focusing on optimization tasks and neural network implementations. The authors examine special-purpose optimizers, mathematical descriptions of photonics optimizers, and their various interconnections. Disparate applications are discussed, including direct encoding, logistics, finance, phase retrieval, machine learning, neural networks, probabilistic graphical models, and image processing, among many others. The main directions of technological advancement and associated challenges in photonics computing are explored, along with an assessment of its efficiency. Finally, the paper discusses prospects and the field of optical quantum computing, providing insights into the potential applications of this technology.Comment: Invited submission by Journal of Advanced Quantum Technologies; accepted version 5/06/202

    Three-dimensional printing as a cutting-edge, versatile and personalizable vascular stent manufacturing procedure:Toward tailor-made medical devices

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    Vascular stents (VS) have revolutionized the treatment of cardiovascular diseases, as evidenced by the fact that the implantation of VS in coronary artery disease (CAD) patients has become a routine, easily approachable surgical intervention for the treatment of stenosed blood vessels. Despite the evolution of VS throughout the years, more efficient approaches are still required to address the medical and scientific challenges, especially when it comes to peripheral artery disease (PAD). In this regard, three-dimensional (3D) printing is envisaged as a promising alternative to upgrade VS by optimizing the shape, dimensions and stent backbone (crucial for optimal mechanical properties), making them customizable for each patient and each stenosed lesion. Moreover, the combination of 3D printing with other methods could also upgrade the final device. This review focuses on the most recent studies using 3D printing techniques to produce VS, both by itself and in combination with other techniques. The final aim is to provide an overview of the possibilities and limitations of 3D printing in the manufacturing of VS. Furthermore, the current situation of CAD and PAD pathologies is also addressed, thus highlighting the main weaknesses of the already existing VS and identifying research gaps, possible market niches and future directions.This work was funded by the Basque Country Government/Eusko Jaurlaritza (Department of Education, University and Research, Consolidated Groups IT448- 22) . Sandra Ruiz-Alonso and Fouad Al -Hakim thank the Basque Country Government for the granted fellowships PRE_2021_2_0153 and PRE_2021_2_0181, respectively. Denis Scaini gratefully acknowledges support from IKERBASQUE, the Basque Foundation of Science

    Synthesis of Quasi-Freestanding Graphene Films Using Radical Species Formed in Cold Plasmas

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    For over a decade, the Stinespring laboratory has investigated scalable, plasma assisted synthesis (PAS) methods for the growth of graphene films on silicon carbide (SiC). These typically utilized CF4-based inductively coupled plasma (ICP) with reactive ion etching (RIE) to selectively etch silicon from the SiC lattice. This yielded a halogenated carbon-rich surface layer which was then annealed to produce the graphene layers. The thickness of the films was controlled by the plasma parameters, and overall, the process was readily scalable to the diameter of the SiC wafer. The PAS process reproducibly yielded two- to three-layer thick graphene films that were highly tethered to the underlying SiC substrate via an intermediate buffer layer. The buffer layer was compositionally similar to graphene. However, a significant number of graphene carbons were covalently bound to silicon atoms in the underlying substrate. This tethering lead to mixing of the film and substrate energy bands which degraded many of graphene’s most desirable electrical properties. The research described in this dissertation was aimed at improving graphene quality by reducing the extent of tethering using a fundamentally different plasma etching mechanism while maintaining scalability. In the ICP-RIE process, the etchant species include F and CFx (x = 1-3) radicals and their corresponding positive ions. These radicals are classified as “cold plasma species” in the sense that they are nominally in thermal equilibrium with the substrate and walls of the system. In contrast, the electrons exist at extremely high temperature (energy), and the ionic species are accelerated to energies on the order of several hundred electron volts by the plasma bias voltage that exists between the plasma and substrate. As a result, the ionic species create a directional, high rate etch that is dominated by physical etching characterized by energy and momentum transfer. In contrast, the neutral radicals chemically etch the surface at a much lower rate. In this work, the effects of physical etching due to high energy ions were eliminated by shielding the SiC substrate using a mask (e.g., quartz) supported by silicon posts. In this way, a microplasma consisting of chemically reactive cold plasma species was created in the small space between the substrate surface and the backside of the quartz mask. This process, referred to here as microplasma assisted synthesis (MPAS), was used to produce graphene films. A parametric investigation was conducted to determine the influence of MPAS operating parameters on graphene quality. The key parameters investigated included ICP power, RIE power, etch time, various mask materials, microreactor height, substrate cooling, initial surface morphology and SiC polytype. The resulting graphene films were characterized by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and atomic force microscopy (AFM). Following optimization of the MPAS process, some tethering of the graphene films remained. However, films produced by MPAS consistently exhibited significantly less tethering than those produced using the PAS process. Moreover, both XPS and Raman spectroscopy indicated that these films were quasi-free standing, and, in some cases, they approached free standing graphene. From a wide view, the results of these studies demonstrate the potential of MPAS as a technique for realizing the controlled synthesis of high-quality, lightly tethered mono-, and few-layer graphene films directly on an insulating substrate. On a more fundamental level, the results of these studies provide insight into the surface chemistry of radical species
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