1,380 research outputs found
Asynchronous Circuit Stacking for Simplified Power Management
As digital integrated circuits (ICs) continue to increase in complexity, new challenges arise for designers. Complex ICs are often designed by incorporating multiple power domains therefore requiring multiple voltage converters to produce the corresponding supply voltages. These converters not only take substantial on-chip layout area and/or off-chip space, but also aggregate the power loss during the voltage conversions that must occur fast enough to maintain the necessary power supplies. This dissertation work presents an asynchronous Multi-Threshold NULL Convention Logic (MTNCL) “stacked” circuit architecture that alleviates this problem by reducing the number of voltage converters needed to supply the voltage the ICs operate at. By stacking multiple MTNCL circuits between power and ground, supplying a multiple of VDD to the entire stack and incorporating simple control mechanisms, the dynamic range fluctuation problem can be mitigated. A 130nm Bulk CMOS process and a 32nm Silicon-on-Insulator (SOI) CMOS process are used to evaluate the theoretical effect of stacking different circuitry while running different workloads. Post parasitic physical implementations are then carried out in the 32nm SOI process for demonstrating the feasibility and analyzing the advantages of the proposed MTNCL stacking architecture
A review of advances in pixel detectors for experiments with high rate and radiation
The Large Hadron Collider (LHC) experiments ATLAS and CMS have established
hybrid pixel detectors as the instrument of choice for particle tracking and
vertexing in high rate and radiation environments, as they operate close to the
LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for
which the tracking detectors will be completely replaced, new generations of
pixel detectors are being devised. They have to address enormous challenges in
terms of data throughput and radiation levels, ionizing and non-ionizing, that
harm the sensing and readout parts of pixel detectors alike. Advances in
microelectronics and microprocessing technologies now enable large scale
detector designs with unprecedented performance in measurement precision (space
and time), radiation hard sensors and readout chips, hybridization techniques,
lightweight supports, and fully monolithic approaches to meet these challenges.
This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog.
Phy
Design Exploration of mm-Wave Integrated Transceivers for Short-Range Mobile Communications Towards 5G
This paper presents a design exploration, at both system and circuit levels, of integrated transceivers for the upcoming fifth generation (5G) of wireless communications. First, a system level model for 5G communications is carried out to derive transceiver design specifications. Being 5G still in pre-standardization phase, a few currently used standards (ECMA-387, IEEE 802.15.3c, and LTE-A) are taken into account as the reference for the signal format. Following a top-down flow, this work presents the design in 65nm CMOS SOI and bulk technologies of the key blocks of a fully integrated transceiver: low noise amplifier (LNA), power amplifier (PA) and on-chip antenna. Different circuit topologies are presented and compared allowing for different trade-offs between gain, power consumption, noise figure, output power, linearity, integration cost and link performance. The best configuration of antenna and LNA co-design results in a peak gain higher than 27dB, a noise figure below 5dB and a power consumption of 35mW. A linear PA design is presented to face the high Peak to Average Power Ratio (PAPR) of multi-carrier transmissions envisaged for 5G, featuring a 1dB compression point output power (OP1dB) of 8.2dBm. The delivered output power in the linear region can be increased up to 13.2dBm by combining four basic PA blocks through a Wilkinson power combiner/divider circuit. The proposed circuits are shown to enable future 5G connections, operating in a mm-wave spectrum range (spanning 9GHz, from 57GHz to 66GHz), with a data-rate of several Gb/s in a short-range scenario, spanning from few centimeters to tens of meters
A Construction Kit for Efficient Low Power Neural Network Accelerator Designs
Implementing embedded neural network processing at the edge requires
efficient hardware acceleration that couples high computational performance
with low power consumption. Driven by the rapid evolution of network
architectures and their algorithmic features, accelerator designs are
constantly updated and improved. To evaluate and compare hardware design
choices, designers can refer to a myriad of accelerator implementations in the
literature. Surveys provide an overview of these works but are often limited to
system-level and benchmark-specific performance metrics, making it difficult to
quantitatively compare the individual effect of each utilized optimization
technique. This complicates the evaluation of optimizations for new accelerator
designs, slowing-down the research progress. This work provides a survey of
neural network accelerator optimization approaches that have been used in
recent works and reports their individual effects on edge processing
performance. It presents the list of optimizations and their quantitative
effects as a construction kit, allowing to assess the design choices for each
building block separately. Reported optimizations range from up to 10'000x
memory savings to 33x energy reductions, providing chip designers an overview
of design choices for implementing efficient low power neural network
accelerators
Characterization of 28 nm FDSOI MOS and application to the design of a low-power 2.4 GHz LNA
IoT is expected to connect billions of devices all over world in the next years, and in a near future, it is expected to use LR-WPAN in a wide variety of applications. Not all the devices will require of high performance but will require of low power hungry systems since most of them will be powered with a battery. Conventional CMOS technologies cannot cover these needs even scaling it to very small regimes, which appear other problems. Hence, new technologies are emerging to cover the needs of this devices. One promising technology is the UTBB FDSOI, which achieves good performance with very good energy efficiency. This project characterizes this technology to obtain a set of parameters of interest for analog/RF design. Finally, with the help of a low-power design methodology (gm/Id approach), a design of an ULP ULV LNA is performed to check the suitability of this technology for IoT
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors
A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (eta) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure
The Multiple Gate Mos-Jfet
A new multiple-gate transistor, the SOI MOS-JFET, is presented. This device combines the MOS field effect and junction field effect within one transistor body. Measured I-V characteristics are provided to illustrate typical modes of operation and the functionality associated with each gate. Two-dimensional simulations of the device?s cross-section will be presented to illustrate various conduction modes under different bias conditions. Test results indicate the MOS-JFET is well suited for both high-voltage and low-voltage circuit demands for systems-on-a-chip applications on SOI technology. Analog building-block circuits based the MOS-JFET are also presented
A miniaturized neuroprosthesis suitable for implantation into the brain
This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complementary metal-oxide-semiconductor (CMOS) integrated circuit for neural signal preamplification, filtering, multiplexing and analog-to-digital conversion, and a second CMOS integrated circuit for wireless transmission of neural data and conditioning of wireless power. The prosthesis is intended for applications where neural signals are processed and decoded to permit the control of artificial or paralyzed limbs. This research, if successful, will allow implantation of the electronics into the brain, or subcutaneously on the skull, and eliminate all external signal and power wiring. The neuroprosthetic system design has strict size and power constraints with each of the front-end preamplifier channels fitting within the 400 x 400 µm pitch of the 100-element MEMS electrode array and power dissipation resulting in less than a 1° C temperature rise for the surrounding brain tissue. We describe the measured performance of initial micropower low-noise CMOS preamplifiers for the neuroprosthetic
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Integrated temperature sensors in deep sub-micron CMOS technologies
textIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Electrical and Computer Engineerin
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