High quality testing of grid style power gating

This paper shows that existing delay-based testing techniques for power gating exhibit fault coverage loss due to unconsidered delays introduced by the structure of the virtual voltage power-distribution-network (VPDN). To restore this loss, which could reach up to 70.3% on stuck-open faults, we propose a design-for-testability (DFT) logic that considers the impact of VPDN on fault coverage in order to constitute the proper interface between the VPDN and the DFT. The proposed logic can be easily implemented on-top of existing DFT solutions and its overhead is optimized by an algorithm that offers trade-off flexibility between test-application-time and hardware overhead. Through physical layout SPICE simulations, we show complete fault coverage recovery on stuck-open faults and 43.2% test-application-time improvement compared to a previously proposed DFT technique. To the best of our knowledge, this paper presents the first analysis of the VPDN impact on test qualit

The first version Buffered Large Analog Bandwidth (BLAB1) ASIC for high luminosity collider and extensive radio neutrino detectors

Future detectors for high luminosity particle identification and ultra high energy neutrino observation would benefit from a digitizer capable of recording sensor elements with high analog bandwidth and large record depth, in a cost-effective, compact and low-power way. A first version of the Buffered Large Analog Bandwidth (BLAB1) ASIC has been designed based upon the lessons learned from the development of the Large Analog Bandwidth Recorder and Digitizer with Ordered Readout (LABRADOR) ASIC. While this LABRADOR ASIC has been very successful and forms the basis of a generation of new, large-scale radio neutrino detectors, its limited sampling depth is a major drawback. A prototype has been designed and fabricated with 65k deep sampling at multi-GSa/s operation. We present test results and directions for future evolution of this sampling technique.Comment: 15 pages, 26 figures; revised, accepted for publication in NIM

Accelerated spatially resolved electrical simulation of photovoltaic devices using photovoltaic-oriented nodal analysis

This paper presents photovoltaic-oriented nodal analysis (PVONA), a general and flexible tool for efficient spatially resolved simulations for photovoltaic (PV) cells and modules. This approach overcomes the major problem of the conventional Simulation Program with Integrated Circuit Emphasis-based approaches for solving circuit network models, which is the limited number of nodes that can be simulated due to memory and computing time requirements. PVONA integrates a specifically designed sparse data structure and a graphics processing unit-based parallel conjugate gradient algorithm into a PV-oriented iterative Newton--Raphson solver. This first avoids the complicated and time-consuming netlist parsing, second saves memory space, and third accelerates the simulation procedure. In the tests, PVONA generated the local current and voltage maps of a model with 316 x 316 nodes with a thin-film PV cell in 15 s, i.e., using only 4.6% of the time required by the latest LTSpice package. The 2-D characterization is used as a case study and the potential application of PVONA toward quantitative analysis of electroluminescence are discussed

Behavioral modeling of digital IC input and output ports

This paper addresses the development of accurate and efficient behavioral models of digital integrated circuit input and output ports for signal integrity simulations and timing analyses. The modeling process is described and applied to the characterization of actual device

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells

The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology model

Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits

The objective of the research presented in this thesis was to investigate the effects of wearout processes on the performance and reliability of CMOS bistable circuits. The main wearout process affecting reliability of submicron MOS devices was identified as hot-carrier stress (and the resulting degradation in circuit performance). The effect of hot-carrier degradation on the resolving time leading to metastability of the bistable circuits also have been investigated. Hot-carrier degradation was identified as a major reliability concern for CMOS bistable circuits designed using submicron technologies. The major hot-carrier effects are the impact ionisation of hot- carriers in the channel of a MOS device and the resulting substrate current and gate current generation. The substrate current has been used as the monitor for the hot-carrier stress and have developed a substrate current model based on existing models that have been extended to incorporate additional effects for submicron devices. The optimisation of the substrate current model led to the development of degradation and life-time models. These are presented in the thesis. A number of bistable circuits designed using 0.7 micron CMOS technology design rules were selected for the substrate current model analysis. The circuits were simulated using a set of optimised SPICE model parameters and the stress factors on each device was evaluated using the substrate current model implemented as a post processor to the SPICE simulation. Model parameters for each device in the bistable were degraded according to the stress experienced and simulated again to determine the degradation in characteristic timing parameters for a predetermined stress period. A comparative study of the effect of degradation on characteristic timing parameters for a number of latch circuits was carried out. The life-times of the bistables were determined using the life-time model. The bistable circuits were found to enter a metastable state under critical timing conditions. The effect of hot-carrier stress induced degradation on the metastable state operation of the bistables were analysed. Based on the analysis of the hot-carrier degradation effects on the latch circuits, techniques are suggested to reduce hot-carrier stress and to improve circuit life-time. Modifications for improving hot- carrier reliability were incorporated into all the bistable circuits which were re-simulated to determine the improvement in life-time and reliability of the circuits under hot-carrier stress. The improved circuits were degraded based on the new stress factors and the degradation effects on the critical timing parameters evaluated and these were compared with those before the modifications. The improvements in the life-time and the reliability of the selected bistable circuits were quantified. It has been demonstrated that the hot-carrier reliability for all the selected bistable circuits can be improved by design techniques to reduce the stress on identified critically stressed devices