DyPS: Dynamic Processor Switching for Energy-Aware Video Decoding on Multi-core SoCs

In addition to General Purpose Processors (GPP), Multicore SoCs equipping modern mobile devices contain specialized Digital Signal Processor designed with the aim to provide better performance and low energy consumption properties. However, the experimental measurements we have achieved revealed that system overhead, in case of DSP video decoding, causes drastic performances drop and energy efficiency as compared to the GPP decoding. This paper describes DyPS, a new approach for energy-aware processor switching (GPP or DSP) according to the video quality . We show the pertinence of our solution in the context of adaptive video decoding and describe an implementation on an embedded Linux operating system with the help of the GStreamer framework. A simple case study showed that DyPS achieves 30% energy saving while sustaining the decoding performanc

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT

Radiation safety based on the sky shine effect in reactor

In the reactor operation, neutrons and gamma rays are the most dominant radiation. As protection, lead and concrete shields are built around the reactor. However, the radiation can penetrate the water shielding inside the reactor pool. This incident leads to the occurrence of sky shine where a physical phenomenon of nuclear radiation sources was transmitted panoramic that extends to the environment. The effect of this phenomenon is caused by the fallout radiation into the surrounding area which causes the radiation dose to increase. High doses of exposure cause a person to have stochastic effects or deterministic effects. Therefore, this study was conducted to measure the radiation dose from sky shine effect that scattered around the reactor at different distances and different height above the reactor platform. In this paper, the analysis of the radiation dose of sky shine effect was measured using the experimental metho

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to be pursued. The Nanoelectronic Modeling Tool (NEMO 3-D) has satisfied the requirement by including emprical $sp^{3}s^{*}$ and $sp^{3}d^{5}s^{*}$ tight binding models and considering strain to successfully simulate various semiconductor material systems. Computationally, however, NEMO 3-D needs significant improvements to utilize increasing supply of processors. This paper introduces the new modeling tool, OMEN 3-D, and discusses the major computational improvements, the 3-D domain decomposition and the multi-level parallelism. As a featured application, a full 3-D parallelized Schr\"odinger-Poisson solver and its application to calculate the bandstructure of $\delta$ doped phosphorus(P) layer in silicon is demonstrated. Impurity bands due to the donor ion potentials are computed.Comment: 4 pages, 6 figures, IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 200