Unveiling the Impact of IR-Drop on Performance Gain in NCFET-Based Processors

Negative capacitance field-effect transistor (NCFET) pushes the subthreshold swing beyond its fundamental limit of 60 mV/decade by incorporating a ferroelectric material within the gate-stack of transistor. Such a material manifests itself as an NC that provides an internal voltage amplification for the transistor resulting in higher ON-current levels. Hence, the performance of processors can be boosted while the operating voltage still remains the same. However, having an NC makes the total gate terminal capacitance larger. Although the impact of that on compensating the gained performance has already been studied in the literature, this paper is the first to explore the impact of NC on exacerbating the IR-drop problem in processors. In fact, voltage fluctuation in the power delivery network (PDN) due to IR-drops is one of the prominent sources of performance loss in processors, which necessitates adding timing guardbands to sustain a reliable operation during runtime. In this paper, we study NC-FinFET standard cells and processor for the 7-nm technology node. We demonstrate that NC, on the one hand, results in larger IR-drops due to the increase in current densities across the chip, which leads to a higher stress on the PDN. However, the internal voltage amplification provided by NC, on the other hand, compensates to some degree the voltage reduction caused by IR-drop. We investigate, from physics all the way to full-chip (GDSII) level, how the overall performance of a processor is affected under the impact that NC has on magnifying and compensating IR-drop

Design for Reliability and Low Power in Emerging Technologies

Die fortlaufende Verkleinerung von Transistor-Strukturgrößen ist einer der wichtigsten Antreiber für das Wachstum in der Halbleitertechnologiebranche. Seit Jahrzehnten erhöhen sich sowohl Integrationsdichte als auch Komplexität von Schaltkreisen und zeigen damit einen fortlaufenden Trend, der sich über alle modernen Fertigungsgrößen erstreckt. Bislang ging das Verkleinern von Transistoren mit einer Verringerung der Versorgungsspannung einher, was zu einer Reduktion der Leistungsaufnahme führte und damit eine gleichbleibenden Leistungsdichte sicherstellte. Doch mit dem Beginn von Strukturgrößen im Nanometerbreich verlangsamte sich die fortlaufende Skalierung. Viele Schwierigkeiten, sowie das Erreichen von physikalischen Grenzen in der Fertigung und Nicht-Idealitäten beim Skalieren der Versorgungsspannung, führten zu einer Zunahme der Leistungsdichte und, damit einhergehend, zu erschwerten Problemen bei der Sicherstellung der Zuverlässigkeit. Dazu zählen, unter anderem, Alterungseffekte in Transistoren sowie übermäßige Hitzeentwicklung, nicht zuletzt durch stärkeres Auftreten von Selbsterhitzungseffekten innerhalb der Transistoren. Damit solche Probleme die Zuverlässigkeit eines Schaltkreises nicht gefährden, werden die internen Signallaufzeiten üblicherweise sehr pessimistisch kalkuliert. Durch den so entstandenen zeitlichen Sicherheitsabstand wird die korrekte Funktionalität des Schaltkreises sichergestellt, allerdings auf Kosten der Performance. Alternativ kann die Zuverlässigkeit des Schaltkreises auch durch andere Techniken erhöht werden, wie zum Beispiel durch Null-Temperatur-Koeffizienten oder Approximate Computing. Wenngleich diese Techniken einen Großteil des üblichen zeitlichen Sicherheitsabstandes einsparen können, bergen sie dennoch weitere Konsequenzen und Kompromisse. Bleibende Herausforderungen bei der Skalierung von CMOS Technologien führen außerdem zu einem verstärkten Fokus auf vielversprechende Zukunftstechnologien. Ein Beispiel dafür ist der Negative Capacitance Field-Effect Transistor (NCFET), der eine beachtenswerte Leistungssteigerung gegenüber herkömmlichen FinFET Transistoren aufweist und diese in Zukunft ersetzen könnte. Des Weiteren setzen Entwickler von Schaltkreisen vermehrt auf komplexe, parallele Strukturen statt auf höhere Taktfrequenzen. Diese komplexen Modelle benötigen moderne Power-Management Techniken in allen Aspekten des Designs. Mit dem Auftreten von neuartigen Transistortechnologien (wie zum Beispiel NCFET) müssen diese Power-Management Techniken neu bewertet werden, da sich Abhängigkeiten und Verhältnismäßigkeiten ändern. Diese Arbeit präsentiert neue Herangehensweisen, sowohl zur Analyse als auch zur Modellierung der Zuverlässigkeit von Schaltkreisen, um zuvor genannte Herausforderungen auf mehreren Designebenen anzugehen. Diese Herangehensweisen unterteilen sich in konventionelle Techniken ((a), (b), (c) und (d)) und unkonventionelle Techniken ((e) und (f)), wie folgt: $\textbf{(a)}$ Analyse von Leistungszunahmen in Zusammenhang mit der Maximierung von Leistungseffizienz beim Betrieb nahe der Transistor Schwellspannung, insbesondere am optimalen Leistungspunkt. Das genaue Ermitteln eines solchen optimalen Leistungspunkts ist eine besondere Herausforderung bei Multicore Designs, da dieser sich mit den jeweiligen Optimierungszielsetzungen und der Arbeitsbelastung verschiebt. $\textbf{(b)}$ Aufzeigen versteckter Interdependenzen zwischen Alterungseffekten bei Transistoren und Schwankungen in der Versorgungsspannung durch „IR-drops“. Eine neuartige Technik wird vorgestellt, die sowohl Über- als auch Unterschätzungen bei der Ermittlung des zeitlichen Sicherheitsabstands vermeidet und folglich den kleinsten, dennoch ausreichenden Sicherheitsabstand ermittelt. $\textbf{(c)}$ Eindämmung von Alterungseffekten bei Transistoren durch „Graceful Approximation“, eine Technik zur Erhöhung der Taktfrequenz bei Bedarf. Der durch Alterungseffekte bedingte zeitlich Sicherheitsabstand wird durch Approximate Computing Techniken ersetzt. Des Weiteren wird Quantisierung verwendet um ausreichend Genauigkeit bei den Berechnungen zu gewährleisten. $\textbf{(d)}$ Eindämmung von temperaturabhängigen Verschlechterungen der Signallaufzeit durch den Betrieb nahe des Null-Temperatur Koeffizienten (N-ZTC). Der Betrieb bei N-ZTC minimiert temperaturbedingte Abweichungen der Performance und der Leistungsaufnahme. Qualitative und quantitative Vergleiche gegenüber dem traditionellen zeitlichen Sicherheitsabstand werden präsentiert. $\textbf{(e)}$ Modellierung von Power-Management Techniken für NCFET-basierte Prozessoren. Die NCFET Technologie hat einzigartige Eigenschaften, durch die herkömmliche Verfahren zur Spannungs- und Frequenzskalierungen zur Laufzeit (DVS/DVFS) suboptimale Ergebnisse erzielen. Dies erfordert NCFET-spezifische Power-Management Techniken, die in dieser Arbeit vorgestellt werden. $\textbf{(f)}$ Vorstellung eines neuartigen heterogenen Multicore Designs in NCFET Technologie. Das Design beinhaltet identische Kerne; Heterogenität entsteht durch die Anwendung der individuellen, optimalen Konfiguration der Kerne. Amdahls Gesetz wird erweitert, um neue system- und anwendungsspezifische Parameter abzudecken und die Vorzüge des neuen Designs aufzuzeigen. Die Auswertungen der vorgestellten Techniken werden mithilfe von Implementierungen und Simulationen auf Schaltkreisebene (gate-level) durchgeführt. Des Weiteren werden Simulatoren auf Systemebene (system-level) verwendet, um Multicore Designs zu implementieren und zu simulieren. Zur Validierung und Bewertung der Effektivität gegenüber dem Stand der Technik werden analytische, gate-level und system-level Simulationen herangezogen, die sowohl synthetische als auch reale Anwendungen betrachten

Leakage Power Reduction for Deeply-Scaled FinFET Circuits Operating in Multiple Voltage Regimes Using Fine-Grained Gate- Length Biasing Technique

Abstract-With the aggressive downscaling of the process technologies and importance of battery-powered systems, reducing leakage power consumption has become one of the most crucial design challenges for IC designers. This paper presents a devicecircuit cross-layer framework to utilize fine-grained gate-length biased FinFETs for circuit leakage power reduction in the near-and super-threshold operation regimes. The impacts of Gate-Length Biasing (GLB) on circuit speed and leakage power are first studied using one of the most advanced technology nodes -a 7nm FinFET technology. Then multiple standard cell libraries using different leakage reduction techniques, such as GLB and Dual-VT, are built in multiple operating regimes at this technology node. It is demonstrated that, compared to Dual-VT, GLB is a more suitable technique for the advanced 7nm FinFET technology due to its capability of delivering a finer-grained trade-off between the leakage power and circuit speed, not to mention the lower manufacturing cost. The circuit synthesis results of a variety of ISCAS benchmark circuits using the presented GLB 7nm FinFET cell libraries show up to 70% leakage improvement with zero degradation in circuit speed in the near-and super-threshold regimes, respectively, compared to the standard 7nm FinFET cell library

Introducing 14-nm FinFET technology in Microwind

This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed.This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed

FinFET Cell Library Design and Characterization

abstract: Modern-day integrated circuits are very capable, often containing more than a billion transistors. For example, the Intel Ivy Bridge 4C chip has about 1.2 billion transistors on a 160 mm2 die. Designing such complex circuits requires automation. Therefore, these designs are made with the help of computer aided design (CAD) tools. A major part of this custom design flow for application specific integrated circuits (ASIC) is the design of standard cell libraries. Standard cell libraries are a collection of primitives from which the automatic place and route (APR) tools can choose a collection of cells and implement the design that is being put together. To operate efficiently, the CAD tools require multiple views of each cell in the standard cell library. This data is obtained by characterizing the standard cell libraries and compiling the results in formats that the tools can easily understand and utilize. My thesis focusses on the design and characterization of one such standard cell library in the ASAP7 7 nm predictive design kit (PDK). The complete design flow, starting from the choice of the cell architecture, design of the cell layouts and the various decisions made in that process to obtain optimum results, to the characterization of those cells using the Liberate tool provided by Cadence design systems Inc., is discussed in this thesis. The end results of the characterized library are used in the APR of a few open source register-transfer logic (RTL) projects and the efficiency of the library is demonstrated.Dissertation/ThesisMasters Thesis Computer Engineering 201

Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity

International audienceThe design methodology based on standard cells is widely used in a broad range of VLSI applications. Further, several optimization algorithms can be employed to address different constraints such as power consumption or reliability. This work evaluates the implications of the usage of complex-logic cells from a 45 nm Standard-Cell library to the Single-Event Transient sensitivity under heavy ions. Results show that even though a reduction in the layout area is obtained when adopting complex-logic gates, a slight reduction in the total sensitive area of the circuit is observed. Moreover, the effectiveness of logical masking can be suppressed, leading to a higher SET cross-section

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

Approximate and timing-speculative hardware design for high-performance and energy-efficient video processing

Since the end of transistor scaling in 2-D appeared on the horizon, innovative circuit design paradigms have been on the rise to go beyond the well-established and ultraconservative exact computing. Many compute-intensive applications – such as video processing – exhibit an intrinsic error resilience and do not necessarily require perfect accuracy in their numerical operations. Approximate computing (AxC) is emerging as a design alternative to improve the performance and energy-efficiency requirements for many applications by trading its intrinsic error tolerance with algorithm and circuit efficiency. Exact computing also imposes a worst-case timing to the conventional design of hardware accelerators to ensure reliability, leading to an efficiency loss. Conversely, the timing-speculative (TS) hardware design paradigm allows increasing the frequency or decreasing the voltage beyond the limits determined by static timing analysis (STA), thereby narrowing pessimistic safety margins that conventional design methods implement to prevent hardware timing errors. Timing errors should be evaluated by an accurate gate-level simulation, but a significant gap remains: How these timing errors propagate from the underlying hardware all the way up to the entire algorithm behavior, where they just may degrade the performance and quality of service of the application at stake? This thesis tackles this issue by developing and demonstrating a cross-layer framework capable of performing investigations of both AxC (i.e., from approximate arithmetic operators, approximate synthesis, gate-level pruning) and TS hardware design (i.e., from voltage over-scaling, frequency over-clocking, temperature rising, and device aging). The cross-layer framework can simulate both timing errors and logic errors at the gate-level by crossing them dynamically, linking the hardware result with the algorithm-level, and vice versa during the evolution of the application’s runtime. Existing frameworks perform investigations of AxC and TS techniques at circuit-level (i.e., at the output of the accelerator) agnostic to the ultimate impact at the application level (i.e., where the impact is truly manifested), leading to less optimization. Unlike state of the art, the framework proposed offers a holistic approach to assessing the tradeoff of AxC and TS techniques at the application-level. This framework maximizes energy efficiency and performance by identifying the maximum approximation levels at the application level to fulfill the required good enough quality. This thesis evaluates the framework with an 8-way SAD (Sum of Absolute Differences) hardware accelerator operating into an HEVC encoder as a case study. Application-level results showed that the SAD based on the approximate adders achieve savings of up to 45% of energy/operation with an increase of only 1.9% in BD-BR. On the other hand, VOS (Voltage Over-Scaling) applied to the SAD generates savings of up to 16.5% in energy/operation with around 6% of increase in BD-BR. The framework also reveals that the boost of about 6.96% (at 50°) to 17.41% (at 75° with 10- Y aging) in the maximum clock frequency achieved with TS hardware design is totally lost by the processing overhead from 8.06% to 46.96% when choosing an unreliable algorithm to the blocking match algorithm (BMA). We also show that the overhead can be avoided by adopting a reliable BMA. This thesis also shows approximate DTT (Discrete Tchebichef Transform) hardware proposals by exploring a transform matrix approximation, truncation and pruning. The results show that the approximate DTT hardware proposal increases the maximum frequency up to 64%, minimizes the circuit area in up to 43.6%, and saves up to 65.4% in power dissipation. The DTT proposal mapped for FPGA shows an increase of up to 58.9% on the maximum frequency and savings of about 28.7% and 32.2% on slices and dynamic power, respectively compared with stat

Design of Low-Capacitance Electrostatic Discharge (ESD) Protection Devices in Advanced Silicon Technologies.

Electrostatic discharge (ESD) related failure is a major IC reliability concern and this is particularly true as technology continues shrink to nano-metric dimensions. ESD design window research shows that ESD robustness of victim devices keep decreasing from 350nm bulk technology to 7nm FinFET technologies. In the meantime, parasitic capacitance of ESD diode with same It2 in FinFET technologies is approximately 3X compared with that in planar technologies. Thus transition from planar to FinFET technology requires more robust ESD protection however the large parasitic capacitance of ESD protection cell is problematic in high-speed interface design. To reduce the parasitic capacitance, a dual diode silicon controlled rectifier (DD-SCR) is presented in this dissertation. This design can exhibit good trade-offs between ESD robustness and parasitic capacitance characteristics. Besides, different bounding materials lead to performance variations in DD-SCRs are compared. Radio frequency (RF) technology is also demanded low capacitance ESD protection. To address this concern, a ?-network is presented, providing robust ESD protection for 10-60 GHz RF circuit. Like a low pass ? filter, the network can reflect high frequency RF signals and transmit low frequency ESD pulses. Given proper inductor value, networks can work as robust ESD solutions at a certain Giga Hertz frequency range, making this design suitable for broad band protection in RF input/outputs (I/Os). To increase the holding voltage and reduce snapback, a resistor assist triggering heterogeneous stacking structure is presented in this dissertation, which can increase the holding voltage and also keep the trigger voltage nearly as same as a single SCR device

A statistical study of time dependent reliability degradation of nanoscale MOSFET devices

Charge trapping at the channel interface is a fundamental issue that adversely affects the reliability of metal-oxide semiconductor field effect transistor (MOSFET) devices. This effect represents a new source of statistical variability as these devices enter the nano-scale era. Recently, charge trapping has been identified as the dominant phenomenon leading to both random telegraph noise (RTN) and bias temperature instabilities (BTI). Thus, understanding the interplay between reliability and statistical variability in scaled transistors is essential to the implementation of a ‘reliability-aware’ complementary metal oxide semiconductor (CMOS) circuit design. In order to investigate statistical reliability issues, a methodology based on a simulation flow has been developed in this thesis that allows a comprehensive and multi-scale study of charge-trapping phenomena and their impact on transistor and circuit performance. The proposed methodology is accomplished by using the Gold Standard Simulations (GSS) technology computer-aided design (TCAD)-based design tool chain co-optimization (DTCO) tool chain. The 70 nm bulk IMEC MOSFET and the 22 nm Intel fin-shape field effect transistor (FinFET) have been selected as targeted devices. The simulation flow starts by calibrating the device TCAD simulation decks against experimental measurements. This initial phase allows the identification of the physical structure and the doping distributions in the vertical and lateral directions based on the modulation in the inversion layer’s depth as well as the modulation of short channel effects. The calibration is further refined by taking into account statistical variability to match the statistical distributions of the transistors’ figures of merit obtained by measurements. The TCAD simulation investigation of RTN and BTI phenomena is then carried out in the presence of several sources of statistical variability. The study extends further to circuit simulation level by extracting compact models from the statistical TCAD simulation results. These compact models are collected in libraries, which are then utilised to investigate the impact of the BTI phenomenon, and its interaction with statistical variability, in a six transistor-static random access memory (6T-SRAM) cell. At the circuit level figures of merit, such as the static noise margin (SNM), and their statistical distributions are evaluated. The focus of this thesis is to highlight the importance of accounting for the interaction between statistical variability and statistical reliability in the simulation of advanced CMOS devices and circuits, in order to maintain predictivity and obtain a quantitative agreement with a measured data. The main findings of this thesis can be summarised by the following points: Based on the analysis of the results, the dispersions of VT and ΔVT indicate that a change in device technology must be considered, from the planar MOSFET platform to a new device architecture such as FinFET or SOI. This result is due to the interplay between a single trap charge and statistical variability, which has a significant impact on device operation and intrinsic parameters as transistor dimensions shrink further. The ageing process of transistors can be captured by using the trapped charge density at the interface and observing the VT shift. Moreover, using statistical analysis one can highlight the extreme transistors and their probable effect on the circuit or system operation. The influence of the passgate (PG) transistor in a 6T-SRAM cell gives a different trend of the mean static noise margin