Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

Design and characterization of low voltage operational amplifiers for smart sensors using low cost CMOS technology

This bachelor thesis brackets the use of different OTA topologies and compares them under the scope of their application as low power comparators and adders for a ΣΔ ADC. This was undertaken under the “Design and characterization of main building blocks for Medical instrumentation ADCs” research project and, more specifically, in the “Design of a Low-IF Sigma-Delta Modulator” section. The researched topologies include a folded cascode, telescopic cascode, class A Miller as well as a class AB Miller. The implementation was performed at transistor level of the for all topologies in a 0.18 μm with original 1.8 V, downscaled to 1.5 V with the goal of reducing power consumption.Ingeniería Biomédic

Design of Inverter Based CMOS Amplifiers in Deep Nanoscale Technologies

In this work, it is proposed a fully differential ring amplifier topology with a deadzone voltage created by a CMOS resistor with a biasing circuit to increase the robustness over PVT variations. The study focuses on analyzing the performance of the ring amplifier over process, temperature, and supply voltage variations, in order to guarantee a viable industrial employment in a 7 nm FinFET CMOS technology node for being used as residue amplifier in ADCs. A ring amplifier is a small modular amplifier, derived from a ring oscillator. It is simple enough that it can quickly be designed using only a few inverters, capacitors, and switches. It can amplify with rail-to-rail output swing, competently charge large capacitive loads using slew-based charging, and scale well in performance according to process trends. In typical process corner, a gain of 72 dB is achieved with a settling time of 150 ps. Throughout the study, the proposed topology is compared with others presented in literature showing better results over corners and presenting a faster response. The proposed topology isn’t yet suitable for industry use, because it presents one corner significantly slower than the rest, namely process corner FF 125 °C, and process corner FS -40 °C with a small oscillation throughout the entire amplification period. Nevertheless, it proved itself to be a promising technique, showing a high gain and a fast settling without oscillation phase, with room for improvement.Neste trabalho, é proposta uma topologia de ring amplifier com a deadzone a ser criada através de uma resistência CMOS com um circuito de polarização para aumentar a robustez para as variações PVT. O estudo foca-se em analisar a performance do ring amplifier nas variações de processo, temperatura e tensão de alimentação, de forma a garantir um uso viável em indústria na tecnologia de 7 nm FinFET CMOS, para ser usado como amplificador de resíduo em ADCs. Um ring amplifier é um pequeno amplificador modular, derivado do ring oscillator. É simples o suficiente para ser facilmente projetado usando apenas poucos inversores, condensadores e interruptores. Consegue amplificar com rail-to-rail output swing, carregar grandes cargas capacitivas com carregamento slew-based e escalar bem em termos de performance de acordo com o processo. No typical process corner, foi obtido um ganho de 72 dB com um tempo de estabilização de 150 ps. Durante o estudo, a topologia proposta é comparada com outras presentes na literatura mostrando melhores resultados over corners e apresentando uma resposta mais rápida. A topologia proposta ainda não está preparada para uso industrial uma vez que apresenta um corner significativamente mais lento que os restantes, nomeadamente, process corner FF 125 °C, e outro process corner, FS -40 °C, com uma pequena oscilação durante todo o período de amplificação. Todavia, provou ser uma técnica promissora, apresentando um ganho elevado e uma rápida estabilização sem fase de oscilação, com espaço para melhoria

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits