The Design of A High Capacity and Energy Efficient Phase Change Main Memory

Higher energy-efficiency has become essential in servers for a variety of reasons that range from heavy power and thermal constraints, environmental issues and financial savings. With main memory responsible for at least 30% of the energy consumed by a server, a low power main memory is fundamental to achieving this energy efficiency DRAM has been the technology of choice for main memory for the last three decades primarily because it traditionally combined relatively low power, high performance, low cost and high density. However, with DRAM nearing its density limit, alternative low-power memory technologies, such as Phase-change memory (PCM), have become a feasible replacement. PCM limitations, such as limited endurance and low write performance, preclude simple drop-in replacement and require new architectures and algorithms to be developed. A PCM main memory architecture (PMMA) is introduced in this dissertation, utilizing both DRAM and PCM, to create an energy-efficient main memory that is able to replace a DRAM-only memory. PMMA utilizes a number of techniques and architectural changes to achieve a level of performance that is par with DRAM. PMMA achieves gains in energy-delay of up to 65%, with less than 5% of performance loss and extremely high energy gains. To address the other major shortcoming of PCM, namely limited endurance, a novel, low- overhead wear-leveling algorithm that builds on PMMA is proposed that increases the lifetime of PMMA to match the expected server lifetime so that both server and memory subsystems become obsolete at about the same time. We also study how to better use the excess capacity, traditionally available on PCM devices, to obtain the highest lifetime possible. We show that under specific endurance distributions, the naive choice does not achieve the highest lifetime. We devise rules that empower the designer to select algorithms and parameters to achieve higher lifetime or simplify the design knowing the impact on the lifetime. The techniques presented also apply to other storage class memories (SCM) memories that suffer from limited endurance

Collaborative Hardware-Software Management of Hybrid Main Memory

DRAM has long been the preferred technology choice for main memory. With new challenges of high energy and scalability of DRAM, emerging non-volatile memory technologies, such as phase-change memory (PCM), are being considered. Typically, PCM is used in conjunction with DRAM to form a hybrid main memory. Exposing both the PCM and DRAM to the system software and managing it through the operating system (OS) is a viable architecture. The advantage of this organization is that current systems are more easily adapted to support a partitioned DRAM/PCM address space with only small changes to their design. In addition, this architecture is the easiest path forward to incorporate persistence in the main memory hierarchy by reserving part of PCM for storage. However, the performance of software-managed hybrid memory is not on par with hardware-only approaches, such as the DRAM cache. This is caused by the large granularity at which data is migrated (OS pages) and the low visibility that the OS has of the access patterns of applications. This thesis proposes an experimental framework for studying software-managed hybrid memory and uses it to understand the causes of its low performance. In addition, this thesis proposes and evaluates several hardware-software co-designed mechanisms to alleviate the performance impacts of managing hybrid memory in software. Lastly, this thesis proposes a new migration policy specifically designed to take advantage of the new hardware support. These contributions show that software-managed hybrid memory with specialized hardware support for migration and monitoring is a viable architecture for PCM-based hybrid main memory

Memory Management for Emerging Memory Technologies

The Memory Wall, or the gap between CPU speed and main memory latency, is ever increasing. The latency of Dynamic Random-Access Memory (DRAM) is now of the order of hundreds of CPU cycles. Additionally, the DRAM main memory is experiencing power, performance and capacity constraints that limit process technology scaling. On the other hand, the workloads running on such systems are themselves changing due to virtualization and cloud computing demanding more performance of the data centers. Not only do these workloads have larger working set sizes, but they are also changing the way memory gets used, resulting in higher sharing and increased bandwidth demands. New Non-Volatile Memory technologies (NVM) are emerging as an answer to the current main memory issues. This thesis looks at memory management issues as the emerging memory technologies get integrated into the memory hierarchy. We consider the problems at various levels in the memory hierarchy, including sharing of CPU LLC, traffic management to future non-volatile memories behind the LLC, and extending main memory through the employment of NVM. The first solution we propose is “Adaptive Replacement and Insertion" (ARI), an adaptive approach to last-level CPU cache management, optimizing the cache miss rate and writeback rate simultaneously. Our specific focus is to reduce writebacks as much as possible while maintaining or improving miss rate relative to conventional LRU replacement policy, with minimal hardware overhead. ARI reduces writebacks on benchmarks from SPEC2006 suite on average by 32.9% while also decreasing misses on average by 4.7%. In a PCM based memory system, this decreases energy consumption by 23% compared to LRU and provides a 49% lifetime improvement beyond what is possible with randomized wear-leveling. Our second proposal is “Variable-Timeslice Thread Scheduling" (VATS), an OS kernel-level approach to CPU cache sharing. With modern, large, last-level caches (LLC), the time to fill the LLC is greater than the OS scheduling window. As a result, when a thread aggressively thrashes the LLC by replacing much of the data in it, another thread may not be able to recover its working set before being rescheduled. We isolate the threads in time by increasing their allotted time quanta, and allowing larger periods of time between interfering threads. Our approach, compared to conventional scheduling, mitigates up to 100% of the performance loss caused by CPU LLC interference. The system throughput is boosted by up to 15%. As an unconventional approach to utilizing emerging memory technologies, we present a Ternary Content-Addressable Memory (TCAM) design with Flash transistors. TCAM is successfully used in network routing but can also be utilized in the OS Virtual Memory applications. Based on our layout and circuit simulation experiments, we conclude that our FTCAM block achieves an area improvement of 7.9× and a power improvement of 1.64× compared to a CMOS approach. In order to lower the cost of Main Memory in systems with huge memory demand, it is becoming practical to extend the DRAM in the system with the less-expensive NVMe Flash, for a much lower system cost. However, given the relatively high Flash devices access latency, naively using them as main memory leads to serious performance degradation. We propose OSVPP, a software-only, OS swap-based page prefetching scheme for managing such hybrid DRAM + NVM systems. We show that it is possible to gain about 50% of the lost performance due to swapping into the NVM and thus enable the utilization of such hybrid systems for memory-hungry applications, lowering the memory cost while keeping the performance comparable to the DRAM-only system

Memory Management for Emerging Memory Technologies

The Memory Wall, or the gap between CPU speed and main memory latency, is ever increasing. The latency of Dynamic Random-Access Memory (DRAM) is now of the order of hundreds of CPU cycles. Additionally, the DRAM main memory is experiencing power, performance and capacity constraints that limit process technology scaling. On the other hand, the workloads running on such systems are themselves changing due to virtualization and cloud computing demanding more performance of the data centers. Not only do these workloads have larger working set sizes, but they are also changing the way memory gets used, resulting in higher sharing and increased bandwidth demands. New Non-Volatile Memory technologies (NVM) are emerging as an answer to the current main memory issues. This thesis looks at memory management issues as the emerging memory technologies get integrated into the memory hierarchy. We consider the problems at various levels in the memory hierarchy, including sharing of CPU LLC, traffic management to future non-volatile memories behind the LLC, and extending main memory through the employment of NVM. The first solution we propose is “Adaptive Replacement and Insertion" (ARI), an adaptive approach to last-level CPU cache management, optimizing the cache miss rate and writeback rate simultaneously. Our specific focus is to reduce writebacks as much as possible while maintaining or improving miss rate relative to conventional LRU replacement policy, with minimal hardware overhead. ARI reduces writebacks on benchmarks from SPEC2006 suite on average by 32.9% while also decreasing misses on average by 4.7%. In a PCM based memory system, this decreases energy consumption by 23% compared to LRU and provides a 49% lifetime improvement beyond what is possible with randomized wear-leveling. Our second proposal is “Variable-Timeslice Thread Scheduling" (VATS), an OS kernel-level approach to CPU cache sharing. With modern, large, last-level caches (LLC), the time to fill the LLC is greater than the OS scheduling window. As a result, when a thread aggressively thrashes the LLC by replacing much of the data in it, another thread may not be able to recover its working set before being rescheduled. We isolate the threads in time by increasing their allotted time quanta, and allowing larger periods of time between interfering threads. Our approach, compared to conventional scheduling, mitigates up to 100% of the performance loss caused by CPU LLC interference. The system throughput is boosted by up to 15%. As an unconventional approach to utilizing emerging memory technologies, we present a Ternary Content-Addressable Memory (TCAM) design with Flash transistors. TCAM is successfully used in network routing but can also be utilized in the OS Virtual Memory applications. Based on our layout and circuit simulation experiments, we conclude that our FTCAM block achieves an area improvement of 7.9× and a power improvement of 1.64× compared to a CMOS approach. In order to lower the cost of Main Memory in systems with huge memory demand, it is becoming practical to extend the DRAM in the system with the less-expensive NVMe Flash, for a much lower system cost. However, given the relatively high Flash devices access latency, naively using them as main memory leads to serious performance degradation. We propose OSVPP, a software-only, OS swap-based page prefetching scheme for managing such hybrid DRAM + NVM systems. We show that it is possible to gain about 50% of the lost performance due to swapping into the NVM and thus enable the utilization of such hybrid systems for memory-hungry applications, lowering the memory cost while keeping the performance comparable to the DRAM-only system

하이브리드 메모리 구조에서 접근 패턴에 기반한 페이지 배치 알고리즘

학위논문 (석사)-- 서울대학교 대학원 공과대학 컴퓨터공학부, 2017. 8. 엄현상.Due to the high memory footprint pressure, the hybrid memory architecture consisting of small-sized DRAM and large-sized PCM has been regarded as a promising approach. This architecture aims at (1) alleviating the high power consumption caused by large-sized DRAM, and (2) harnessing the non-volatility and in-place update capability of PCM. Numerous studies have addressed the importance of page placement scheme between two different types of memory frames. Particularly, they have made every effort to provide good wear-leveling, hide the low write speed of PCM and reduce the power consumption. However, they lack one of the two points: (1) read-dominated workloads also decrease the system-wide energy efficiency and (2) excessive page migration should be avoided. In order to solve the abovementioned problems, we propose an access-pattern- aware page placement algorithm. Fundamentally, it uses page-leveling policy using multi-queue. To set the level of a page, it uses weighted access counting which puts a more emphasis on write accesses without ignoring read accesses. To minimize the number of migrations from DRAM to PCM, it performs state-transition-based recency checking for pages in DRAM. Our experimental results clearly demonstrate that it can reduce the average memory access time by up to 39% and the power consumption by up to 57%, respectively, compared to the previous approaches. Furthermore, they show that the PCM wear-out performance can be improved by 27%.Chapter 1 Introduction 1 Chapter 2 Background and Motivation 6 2.1 Memory Architecture with DRAM and NVRAM 6 2.2 Motivating Examples 8 Chapter 3 Solution 12 3.1 Overview 12 3.2 Page Leveling 15 3.3 Getting a Free Page Frame from DRAM 18 3.4 Recency Checking 21 Chapter 4 Experimental Evaluation 26 4.1 Experimental Setup 26 4.2 Effect of Recency Checking 31 4.3 Effect of page placement algorithm depending on w-based access frequency 33 4.3.1 Effect on the number of page migrations 34 4.3.2 Effect on the average memory access time and the power consumption 35 4.3.3 Effect on the Lifetime of PCM 39 4.4 Performance analysis performed while varying the DRAM size 40 4.5 Techniques for further performance improvements 43 Chapter 5 Related Work 49 Chapter 6 Conclusion 52 Bibliography 54 초록 57Maste

Mitigating Limited PCM Write Bandwidth and Endurance in Hybrid Memory Systems

With the rise of big data and cloud computing, there is increasing demand on memory capacity to solve problems of large sizes and consolidate computation tasks. For large capacity memory systems, DRAM is a significant source of energy consumption. Non-volatile memory, such as Phase-Change Memory (PCM), is a promising technology for constructing energy-efficient memory. Unlike DRAM, PCM has negligible background (static) power and allows high density packaging. But PCM also has limited write bandwidth and write endurance. Hybrid memory systems have been proposed to combine the high-density and low standby power of PCM with the good write performance of DRAM. This thesis addresses two challenges which are unique to hybrid memory systems. The first challenge is the limited PCM bandwidth, which can become a performance bottleneck. The second challenge is the non-contiguous physical memory due to retired memory pages. Since PCM cells have limited write endurance, it is inevitable to gradually have increased number of uncorrectable errors during the lifetime. Memory pages that have detected errors are normally retired by the OS, which create unusable “holes” in the physical memory. These unusable holes make it difficult to construct traditional superpages, which can incur significant performance overhead. In this thesis, I propose three solutions to address these two challenges. First, I observed that an unbalanced distribution of modified data bits among PCM chips significantly increases PCM write time and hurts effective write bandwidth. I propose new XOR-based mapping schemes between program data bits and PCM cells to improve PCM write throughput by spreading modified data bits evenly among PCM chips. Second, I propose a compressed DRAM cache scheme to improve DRAM effective capacity and reduce write traffic to PCM. A new adaptive delta-compression technique for modified data is used to achieve a large compression ratio. Third, I propose Gap-tolerant Sequential Mapping, a new memory page mapping scheme, to construct superpages from non-contiguous physical memory. The proposed three solutions have simple and practical designs, and can be easily adopted in future hybrid memory systems

Runtime Systems for Persistent Memories

Emerging persistent memory (PM) technologies promise the performance of DRAM with the durability of disk. However, several challenges remain in existing hardware, programming, and software systems that inhibit wide-scale PM adoption. This thesis focuses on building efficient mechanisms that span hardware and operating systems, and programming languages for integrating PMs in future systems. First, this thesis proposes a mechanism to solve low-endurance problem in PMs. PMs suffer from limited write endurance---PM cells can be written only 10^7-10^9 times before they wear out. Without any wear management, PM lifetime might be as low as 1.1 months. This thesis presents Kevlar, an OS-based wear-management technique for PM, that requires no new hardware. Kevlar uses existing virtual memory mechanisms to remap pages, enabling it to perform both wear leveling---shuffling pages in PM to even wear; and wear reduction---transparently migrating heavily written pages to DRAM. Crucially, Kevlar avoids the need for hardware support to track wear at fine grain. It relies on a novel wear-estimation technique that builds upon Intel's Precise Event Based Sampling to approximately track processor cache contents via a software-maintained Bloom filter and estimate write-back rates at fine grain. Second, this thesis proposes a persistency model for high-level languages to enable integration of PMs in to future programming systems. Prior works extend language memory models with a persistency model prescribing semantics for updates to PM. These approaches require high-overhead mechanisms, are restricted to certain synchronization constructs, provide incomplete semantics, and/or may recover to state that cannot arise in fault-free program execution. This thesis argues for persistency semantics that guarantee failure atomicity of synchronization-free regions (SFRs) --- program regions delimited by synchronization operations. The proposed approach provides clear semantics for the PM state that recovery code may observe and extends C++11's "sequential consistency for data-race-free" guarantee to post-failure recovery code. To this end, this thesis investigates two designs for failure-atomic SFRs that vary in performance and the degree to which commit of persistent state may lag execution. Finally, this thesis proposes StrandWeaver, a hardware persistency model that minimally constrains ordering on PM operations. Several language-level persistency models have emerged recently to aid programming recoverable data structures in PM. The language-level persistency models are built upon hardware primitives that impose stricter ordering constraints on PM operations than the persistency models require. StrandWeaver manages PM order within a strand, a logically independent sequence of PM operations within a thread. PM operations that lie on separate strands are unordered and may drain concurrently to PM. StrandWeaver implements primitives under strand persistency to allow programmers to improve concurrency and relax ordering constraints on updates as they drain to PM. Furthermore, StrandWeaver proposes mechanisms that map persistency semantics in high-level language persistency models to the primitives implemented by StrandWeaver.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/155100/1/vgogte_1.pd

Bit-Flip Aware Data Structures for Phase Change Memory

Big, non-volatile, byte-addressable, low-cost, and fast non-volatile memories like Phase Change Memory are appearing in the marketplace. They have the capability to unify both memory and storage and allow us to rethink the present memory hierarchy. An important draw-back to Phase Change Memory is limited write-endurance. In addition, Phase Change Memory shares with other Non-Volatile Random Access Memories an asym- metry in the energy costs of writes and reads. Best use of Non-Volatile Random Access Memories limits the number of times a Non-Volatile Random Access Memory cell changes contents, called a bit-flip. While the future of main memory is still unknown, we should already start to create data structures for them in order to shape the future era. This thesis investigates the creation of bit-flip aware data structures.The thesis first considers general ways in which a data structure can save bit- flips by smart overwrites and by using the exclusive-or of pointers. It then shows how a simple content dependent encoding can reduce bit-flips for web corpora. It then shows how to build hash based dictionary structures for Linear Hashing and Spiral Storage. Finally, the thesis presents Gray counters, close to bit-flip optimal counters that even enable age- based wear leveling with counters managed by the Non-Volatile Random Access Memories themselves instead of by the Operating Systems

Improving Phase Change Memory (PCM) and Spin-Torque-Transfer Magnetic-RAM (STT-MRAM) as Next-Generation Memories: A Circuit Perspective

In the memory hierarchy of computer systems, the traditional semiconductor memories Static RAM (SRAM) and Dynamic RAM (DRAM) have already served for several decades as cache and main memory. With technology scaling, they face increasingly intractable challenges like power, density, reliability and scalability. As a result, they become less appealing in the multi/many-core era with ever increasing size and memory-intensity of working sets. Recently, there is an increasing interest in using emerging non-volatile memory technologies in replacement of SRAM and DRAM, due to their advantages like non-volatility, high device density, near-zero cell leakage and resilience to soft errors. Among several new memory technologies, Phase Change Memory (PCM) and Spin-Torque-Transfer Magnetic-RAM (STT-MRAM) are most promising candidates in building main memory and cache, respectively. However, both of them possess unique limitations that preventing them from being effectively adopted. In this dissertation, I present my circuit design work on tackling the limitations of PCM and STT-MRAM. At bit level, both PCM and STT-MRAM suffer from excessive write energy, and PCM has very limited write endurance. For PCM, I implement Differential Write to remove large number of unnecessary bit-writes that do not alter the stored data. It is then extended to STT-MRAM as Early Write Termination, with specific optimizations to eliminate the overhead of pre-write read. At array level, PCM enjoys high density but could not provide competitive throughput due to its long write latency and limited number of read/write circuits. I propose a Pseudo-Multi-Port Bank design to exploit intra-bank parallelism by recycling and reusing shared peripheral circuits between accesses in a time-multiplexed manner. On the other hand, although STT-MRAM features satisfactory throughput, its conventional array architecture is constrained on density and scalability by the pitch of the per-column bitline pair. I propose a Common-Source-Line Array architecture which uses a shared source-line along the row, essentially leaving only one bitline per column. For these techniques, I provide circuit level analyses as well as architecture/system level and/or process/device level discussions. In addition, relevant background and work are thoroughly surveyed and potential future research topics are discussed, offering insights and prospects of these next-generation memories

Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives

This dissertation focuses on three types of emerging NVMs, spin-transfer torque RAM (STT-RAM), phase change memory (PCM), and metal-oxide resistive RAM (ReRAM). STT-RAM has been identified as the best replacement of SRAM to build large-scale and low-power on-chip caches and also an energy-efficient alternative to DRAM as main memory. PCM and ReRAM have been considered to be promising technologies for building future large-scale and low-power main memory systems. This dissertation investigates two aspects to facilitate them in next-generation memory system design, architecture-level and application-level perspectives. First, multi-level cell (MLC) STT-RAM based cache design is optimized by using data encoding and data compression. Second, MLC STT-RAM is utilized as persistent main memory for fast and energy-efficient local checkpointing. Third, the commonly used database indexing algorithm, B+tree, is redesigned to be NVM-friendly. Forth, a novel processing-in-memory architecture built on ReRAM based main memory is proposed to accelerate neural network applications